JPS5718358A - Photodriven type thyristor - Google Patents

Photodriven type thyristor

Info

Publication number
JPS5718358A
JPS5718358A JP9226880A JP9226880A JPS5718358A JP S5718358 A JPS5718358 A JP S5718358A JP 9226880 A JP9226880 A JP 9226880A JP 9226880 A JP9226880 A JP 9226880A JP S5718358 A JPS5718358 A JP S5718358A
Authority
JP
Japan
Prior art keywords
thyristor
photodriven
overvoltage
electrode
protective element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9226880A
Other languages
Japanese (ja)
Other versions
JPH0117269B2 (en
Inventor
Nobutake Konishi
Mutsuhiro Mori
Masami Naito
Tomoyuki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9226880A priority Critical patent/JPS5718358A/en
Publication of JPS5718358A publication Critical patent/JPS5718358A/en
Publication of JPH0117269B2 publication Critical patent/JPH0117269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Abstract

PURPOSE:To obtain the photodriven type thyristor having a simple-structured sheath by a method wherein the thyristor is formed in such manner that it has a selfprotecting function in itself by means of applying and conducting a current to a gate through the intermediary of an overvoltage protective element when forward direction overvoltage is applied. CONSTITUTION:The photodriven thyristor consists of a photoauxiliary thyristor ATHY and a main thyristor MTHY. A p-emitter layer nE, an anode electrode 15 and a cathode electrode 14 are formed on a semiconductor substrate 10. Then, an optical fiber 3 for the turn-on of light and a cathode electrode 140 are provided on the ATHY and the circuit, consisting of a diode 200, a Zener diode 201 and an overvoltage protective element 202, is connected to a gate electrode 141. When forward direction overvoltage is applied, the overvoltage protective element works, a current is applied to the pB layer through the electrode 141 and the thyristor is turned to be conductive, thereby enabling to prevent the breakdown due to an excess current.
JP9226880A 1980-07-08 1980-07-08 Photodriven type thyristor Granted JPS5718358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9226880A JPS5718358A (en) 1980-07-08 1980-07-08 Photodriven type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9226880A JPS5718358A (en) 1980-07-08 1980-07-08 Photodriven type thyristor

Publications (2)

Publication Number Publication Date
JPS5718358A true JPS5718358A (en) 1982-01-30
JPH0117269B2 JPH0117269B2 (en) 1989-03-29

Family

ID=14049642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9226880A Granted JPS5718358A (en) 1980-07-08 1980-07-08 Photodriven type thyristor

Country Status (1)

Country Link
JP (1) JPS5718358A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124160A (en) * 1982-12-29 1984-07-18 Fuji Electric Corp Res & Dev Ltd Optical thyristor
JPS59132165A (en) * 1983-01-18 1984-07-30 Hitachi Ltd Semiconductor device
JPS60177945A (en) * 1984-02-24 1985-09-11 Kubota Ltd Centrifugal casting method of wear resistance casting
JPS61239665A (en) * 1985-04-12 1986-10-24 シ−メンス、アクチエンゲゼルシヤフト Light ignitable thyristor
FR2598043A1 (en) * 1986-04-25 1987-10-30 Thomson Csf SEMICONDUCTOR COMPONENT FOR OVERVOLTAGE AND OVERCURRENT PROTECTION
JPS63107168A (en) * 1986-10-24 1988-05-12 Fuji Electric Co Ltd Photo thyristor
JPH01184990A (en) * 1988-01-20 1989-07-24 Sumitomo Bakelite Co Ltd Circuit forming method
EP0400153A1 (en) * 1988-11-07 1990-12-05 Kabushiki Kaisha Toshiba Optical semiconductor device having a zero-crossing function

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4817634U (en) * 1971-07-06 1973-02-28
JPS5076970A (en) * 1973-10-01 1975-06-24
JPS54166275U (en) * 1978-05-15 1979-11-22

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4817634U (en) * 1971-07-06 1973-02-28
JPS5076970A (en) * 1973-10-01 1975-06-24
JPS54166275U (en) * 1978-05-15 1979-11-22

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124160A (en) * 1982-12-29 1984-07-18 Fuji Electric Corp Res & Dev Ltd Optical thyristor
JPH0429232B2 (en) * 1982-12-29 1992-05-18
JPS59132165A (en) * 1983-01-18 1984-07-30 Hitachi Ltd Semiconductor device
JPH027192B2 (en) * 1983-01-18 1990-02-15 Hitachi Ltd
JPS60177945A (en) * 1984-02-24 1985-09-11 Kubota Ltd Centrifugal casting method of wear resistance casting
JPS61239665A (en) * 1985-04-12 1986-10-24 シ−メンス、アクチエンゲゼルシヤフト Light ignitable thyristor
FR2598043A1 (en) * 1986-04-25 1987-10-30 Thomson Csf SEMICONDUCTOR COMPONENT FOR OVERVOLTAGE AND OVERCURRENT PROTECTION
JPS63107168A (en) * 1986-10-24 1988-05-12 Fuji Electric Co Ltd Photo thyristor
JPH01184990A (en) * 1988-01-20 1989-07-24 Sumitomo Bakelite Co Ltd Circuit forming method
EP0400153A1 (en) * 1988-11-07 1990-12-05 Kabushiki Kaisha Toshiba Optical semiconductor device having a zero-crossing function
US5138415A (en) * 1988-11-07 1992-08-11 Kabushiki Kaisha Toshiba Photo-semiconductor device with a zero-cross function

Also Published As

Publication number Publication date
JPH0117269B2 (en) 1989-03-29

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