JPS5713761A - Light energized bidirectional thyristor - Google Patents

Light energized bidirectional thyristor

Info

Publication number
JPS5713761A
JPS5713761A JP8774880A JP8774880A JPS5713761A JP S5713761 A JPS5713761 A JP S5713761A JP 8774880 A JP8774880 A JP 8774880A JP 8774880 A JP8774880 A JP 8774880A JP S5713761 A JPS5713761 A JP S5713761A
Authority
JP
Japan
Prior art keywords
layer
light
trigger
semiconductor parts
bidirectional thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8774880A
Other languages
Japanese (ja)
Inventor
Hideo Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8774880A priority Critical patent/JPS5713761A/en
Publication of JPS5713761A publication Critical patent/JPS5713761A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Abstract

PURPOSE:To readily enhance the withstand voltage of a light energized bidirectional thyristor without specific configuration for introducing a trigger light by forming a structure in which the trigger light for the respective semiconductor parts are incident from N type end layer side. CONSTITUTION:The first and second semiconductor parts 10 and 20 of P-N-P-N layer are electrically isolated via an isolating region 30 and are aligned in parallel. The two semiconductor parts are commonly connected at electrodes 40 and 50, the first and second photorecptors 60 and 70 are respectively formed at the electrodes 40 and 50 disposed on N12 layer and N22 layer, and light emitting diodes 80 and 90 are formed as triggering means. Since the trigger lights are introduced from the N12 and N22 layer sides, a bevel structure, employed, does not disturb the introduction of the trigger light, but can readily obtain high withstand voltage characteristic.
JP8774880A 1980-06-30 1980-06-30 Light energized bidirectional thyristor Pending JPS5713761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8774880A JPS5713761A (en) 1980-06-30 1980-06-30 Light energized bidirectional thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8774880A JPS5713761A (en) 1980-06-30 1980-06-30 Light energized bidirectional thyristor

Publications (1)

Publication Number Publication Date
JPS5713761A true JPS5713761A (en) 1982-01-23

Family

ID=13923546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8774880A Pending JPS5713761A (en) 1980-06-30 1980-06-30 Light energized bidirectional thyristor

Country Status (1)

Country Link
JP (1) JPS5713761A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130770A (en) * 1984-07-24 1986-02-13 Diesel Kiki Co Ltd Vehicle detector
JPH02125666A (en) * 1988-11-04 1990-05-14 Sharp Corp Photo triac

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130770A (en) * 1984-07-24 1986-02-13 Diesel Kiki Co Ltd Vehicle detector
JPH02125666A (en) * 1988-11-04 1990-05-14 Sharp Corp Photo triac

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