JPS59124160A - Optical thyristor - Google Patents
Optical thyristorInfo
- Publication number
- JPS59124160A JPS59124160A JP23132882A JP23132882A JPS59124160A JP S59124160 A JPS59124160 A JP S59124160A JP 23132882 A JP23132882 A JP 23132882A JP 23132882 A JP23132882 A JP 23132882A JP S59124160 A JPS59124160 A JP S59124160A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- scr
- layer
- negative resistance
- optical thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000008188 pellet Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
Abstract
Description
【発明の詳細な説明】
本発明は、過電圧保護回路を含む光サイリスクに関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photovoltage protection circuit that includes an overvoltage protection circuit.
一般に、光サイリスタは点弧時の耐量を考え、トリガ光
の供給法やゲート構造に工夫がされている。このため、
点弧がゲート電極からおこる場合は、初期点弧面積及び
その広がり方が正常で定格内の使用では素子が破壊する
ことはない。Generally, the trigger light supply method and gate structure of optical thyristors are devised in consideration of the withstand capacity during ignition. For this reason,
When ignition occurs from the gate electrode, the initial ignition area and its spread are normal, and the device will not be destroyed if used within the rated range.
しかし、過電圧を受けて光サイリスタがブレークオーバ
する場合は、点弧個所を特定できないので、初期点弧面
積及びその広がり方によっては回路条件との関連で電気
的に破壊することがある。However, when an optical thyristor breaks over due to overvoltage, the firing point cannot be specified, so depending on the initial firing area and how it spreads, it may be electrically destroyed in relation to the circuit conditions.
一方、電気回路にあっては、回路側で一応の過電圧対策
をしているものの、予想外の条件により危険な過電圧の
発生が十分考えられるので、光サイリスタなどの主要素
子は予想外の過電圧にも破壊しないような対策が必要で
ある′−０このため、本発明ではゲート電極とアノード
電極の間に光サイリスクのブレークオーバ電圧よりも低
い電圧でブレークオーバする負性抵抗素子を接続して過
電圧破壊を防止できるようにしている。On the other hand, in electrical circuits, although some overvoltage countermeasures are taken on the circuit side, there is a strong possibility that dangerous overvoltage may occur due to unexpected conditions, so main elements such as optical thyristors are not protected against unexpected overvoltage. Therefore, in the present invention, a negative resistance element that breaks over at a voltage lower than the breakover voltage of the photosyrisk is connected between the gate electrode and the anode electrode to prevent overvoltage. This helps prevent destruction.
第１図にその一実施例を示す。ＰＥｊ悟２．Ｎ８層３、
Ｐｎ層４．Ｎｗ層５から成る光サイリスタエレメント１
の増幅ゲート電極６とｐｎｐｎの四層構造からなる半導
体スイッチ、例えばブレーク・オーバダイオード（ＢＯ
Ｄ）７のカッニド電極８を接続し、ＢＯＤ７のアノード
電＠９を、数１００の電流制限抵抗１０を介してサイリ
スタエレメントのアノード電極１１に接続している。FIG. 1 shows an example of this. PEj Satoru 2. N8 layer 3,
Pn layer 4. Optical thyristor element 1 consisting of Nw layer 5
A semiconductor switch consisting of an amplification gate electrode 6 and a pnpn four-layer structure, such as a break over diode (BO
D) 7 cannide electrodes 8 are connected, and the anode electrode @9 of BOD 7 is connected to the anode electrode 11 of the thyristor element via several hundred current limiting resistors 10.
このような回路構成において、ＢＯＤ７がサイリスク耐
圧より多少低い電圧でブレークオーバ動作を開始するよ
うにＢＯＤ電圧を設定すると、過電圧が光サイリスタに
印加されたとき、光サイリスクがブレークオーバする前
にＢＯＤがオンし、その負荷電流が矢印２ｏの様に電流
制限抵抗１゜を介してサイリスタのゲート電極６に流入
する。In such a circuit configuration, if the BOD voltage is set so that BOD7 starts breakover operation at a voltage that is somewhat lower than the thyristor breakdown voltage, when an overvoltage is applied to the optical thyristor, the BOD will stop before the optical thyristor breaks over. The load current flows into the gate electrode 6 of the thyristor through the current limiting resistor 1° as indicated by the arrow 2o.
サイリスタはこのゲート電流によって正常点弧し、破壊
しない。また制限抵抗１ｏはゲートに過大な電流が流入
することを抑制する働きをする。負性抵抗素子７は、光
サイリスタ耐圧より低い電圧で放電する放電ギャップを
持つ真空管でもよい。The thyristor fires normally due to this gate current and is not destroyed. Further, the limiting resistor 1o functions to suppress excessive current from flowing into the gate. The negative resistance element 7 may be a vacuum tube having a discharge gap that discharges at a voltage lower than the optical thyristor breakdown voltage.
第２図は具体的実施例である。光サイリスタエレメント
１と受光部１３に光信号を伝達するためのケース内ライ
トガイド１４とアノード側銅電極１１１とカソード側銅
電極１２１とアノード側銅電極１１１に半田付は又はろ
う付けされた四層構造の負性抵抗素子７とセラミックケ
ース１５から成り、電流制限抵抗１０は外付けとなって
いる。FIG. 2 shows a specific example. Four layers are soldered or brazed to the light guide 14 in the case for transmitting optical signals to the optical thyristor element 1 and the light receiving part 13, the anode side copper electrode 111, the cathode side copper electrode 121, and the anode side copper electrode 111. It consists of a negative resistance element 7 and a ceramic case 15, and a current limiting resistor 10 is externally attached.
第３図は電流制限抵抗１０をセラミックケース１５の中
に入れると共に、負性抵抗素子７をサイリスタチップ１
上に取着した変形例である。In FIG. 3, a current limiting resistor 10 is placed in a ceramic case 15, and a negative resistance element 7 is placed in a thyristor chip 1.
This is a modified example attached to the top.
第４図は光サイリスタ１と四層構造の負性抵抗素子７を
同一シリコン板に集積した変形例である。FIG. 4 shows a modification in which the optical thyristor 1 and the four-layer negative resistance element 7 are integrated on the same silicon plate.
この場合負性抵抗素子の耐圧を光サイリスタの耐圧より
低くするために、負性抵抗素子７のＮｕ層５１の幅を光
サイリスタ１のＮ１８層５の幅より大きくしている。そ
して負性抵抗素子のカソード電極８と、光サイリスタの
補助カソード電極６の間に電流制限抵抗１０を挿入して
いる。この抵抗は、配線抵抗のような小さな抵抗であっ
てもよい。In this case, in order to make the breakdown voltage of the negative resistance element lower than the breakdown voltage of the optical thyristor, the width of the Nu layer 51 of the negative resistance element 7 is made larger than the width of the N18 layer 5 of the optical thyristor 1. A current limiting resistor 10 is inserted between the cathode electrode 8 of the negative resistance element and the auxiliary cathode electrode 6 of the optical thyristor. This resistance may be a small resistance such as a wiring resistance.
負性抵抗素子および抵抗は、必ずしもケース内に設ける
必要はなく、ケースに引出し端子を設けておき、個々の
サイリスクの動作・使用条件に応じて最適の素子と抵抗
を送択して接続することが可能である。Negative resistance elements and resistors do not necessarily need to be installed inside the case; instead, a lead-out terminal should be provided in the case, and the most suitable element and resistor should be selected and connected according to the operation and usage conditions of each Cyrisk. is possible.
以上説明したとおり、本発明によれば、増幅ゲートを持
つ光サイリスタの特性に錯み、過電圧が加わったとき負
性抵抗を介して上記ゲートに電流を流し込み、サイリス
クを全面において点弧させるようにしたので、負性抵抗
として小容量のものを用いつ・つ、サイリスタの不時の
被服を確実に防止することができる。As explained above, according to the present invention, by exploiting the characteristics of an optical thyristor having an amplification gate, when an overvoltage is applied, current flows into the gate through the negative resistance, and the thyristor is ignited over the entire surface. Therefore, it is possible to reliably prevent the thyristor from being inadvertently covered while using a negative resistor with a small capacity.
第１図は本発明の基本構成図、第２図、第３図および第
４図は本発明のそれぞれ異なる実施例を示す断面図であ
る。
１・・・元サイリスタエレメント、２・・・２８層、３
・・・Ｎｎ層、４・・・ＦＢ層、５・・・Ｎ ’Ｅ１層
、６・、・第１補助カソード電極、７・・・負性抵抗素
子、１０・・・電流制限用抵抗、１１，１１１・・・光
サイリスタアノード電極、１２，１２１・・・光サイリ
スクカソード電極、１３・・・光サイリスタ受光部、１
４・・ケース内ライトガイド、１５・・・セラミックケ
ース。FIG. 1 is a basic configuration diagram of the present invention, and FIGS. 2, 3, and 4 are sectional views showing different embodiments of the present invention. 1... Original thyristor element, 2... 28 layers, 3
... Nn layer, 4... FB layer, 5... N'E1 layer, 6... first auxiliary cathode electrode, 7... negative resistance element, 10... current limiting resistor, DESCRIPTION OF SYMBOLS 11, 111... Photothyristor anode electrode, 12, 121... Photothyristor cathode electrode, 13... Photothyristor light receiving part, 1
4. Light guide inside the case, 15. Ceramic case.
Claims (1)
において、任意の増幅ゲート電極を負性抵抗素子と抵抗
を介してアノード電位部と接続したことを特徴とする光
サイリスタ。 ２、特許請求の範囲第１項記載の光サイリスタにおいて
、上記の負性抵抗素子がｐｎｐｎ四層構造の半導体素子
であることを特徴とする光サイリスク。 ３）特許請求の範囲第１項記載の元サイリスクにおいて
、上記の負性抵抗素子が放電ギャップであることを特徴
とする光サイリスタ。 ４）特許請求の範囲第１項記載の光サイリスタにおいて
、上記の負性抵抗素子をケース内に収納したことを特徴
とする光サイリスタ。 ５）特許請求の範囲第１項記載の光サイリスタにおいて
、上記の負性抵抗素子と抵抗をケース内に収納したこと
を特徴とする光サイリスク。 ６）特許請求の範囲第１項記載の光サイリスタにおいて
、上記の負性抵抗素子を光サイリスタのペレット内に集
積化したことを特徴とする光サイリスタ。 ７）特許請求の範囲第１項記載の光サイリスクにおいて
、上記の負性抵抗素子と抵抗をケース外に設けたことを
特徴とする光サイリスタ。[Claims] 1) An optical thyristor having a small number of amplifying gates (at least one stage), characterized in that an arbitrary amplifying gate electrode is connected to an anode potential section via a negative resistance element and a resistor. 2. The optical thyristor according to claim 1, wherein the negative resistance element is a semiconductor element with a pnpn four-layer structure. 3) The optical thyristor according to claim 1. An optical thyristor characterized in that the negative resistance element is a discharge gap. 4) An optical thyristor according to claim 1, characterized in that the negative resistance element described above is housed in a case. 5) An optical thyristor according to claim 1, characterized in that the negative resistance element and the resistor described above are housed in a case. 6) An optical thyristor according to claim 1, characterized in that the negative resistance element described above is integrated within a pellet of the optical thyristor. 7) A photothyristor according to claim 1, wherein the negative resistance element and the resistor are provided outside the case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23132882A JPS59124160A (en) | 1982-12-29 | 1982-12-29 | Optical thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23132882A JPS59124160A (en) | 1982-12-29 | 1982-12-29 | Optical thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59124160A true JPS59124160A (en) | 1984-07-18 |
| JPH0429232B2 JPH0429232B2 (en) | 1992-05-18 |
Family
ID=16921907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23132882A Granted JPS59124160A (en) | 1982-12-29 | 1982-12-29 | Optical thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59124160A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5076970A (en) * | 1973-10-01 | 1975-06-24 | ||
| JPS5183784A (en) * | 1974-12-10 | 1976-07-22 | Siemens Ag | |
| JPS5193678A (en) * | 1975-02-14 | 1976-08-17 | ||
| JPS54172671U (en) * | 1978-05-24 | 1979-12-06 | ||
| JPS5596684A (en) * | 1979-01-19 | 1980-07-23 | Hitachi Ltd | Light drive semiconductor controlled rectifier |
| JPS5692483U (en) * | 1979-12-18 | 1981-07-23 | ||
| JPS5718358A (en) * | 1980-07-08 | 1982-01-30 | Hitachi Ltd | Photodriven type thyristor |
-
1982
- 1982-12-29 JP JP23132882A patent/JPS59124160A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5076970A (en) * | 1973-10-01 | 1975-06-24 | ||
| JPS5183784A (en) * | 1974-12-10 | 1976-07-22 | Siemens Ag | |
| JPS5193678A (en) * | 1975-02-14 | 1976-08-17 | ||
| JPS54172671U (en) * | 1978-05-24 | 1979-12-06 | ||
| JPS5596684A (en) * | 1979-01-19 | 1980-07-23 | Hitachi Ltd | Light drive semiconductor controlled rectifier |
| JPS5692483U (en) * | 1979-12-18 | 1981-07-23 | ||
| JPS5718358A (en) * | 1980-07-08 | 1982-01-30 | Hitachi Ltd | Photodriven type thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0429232B2 (en) | 1992-05-18 |
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