JPS5183784A - - Google Patents
Info
- Publication number
- JPS5183784A JPS5183784A JP50147900A JP14790075A JPS5183784A JP S5183784 A JPS5183784 A JP S5183784A JP 50147900 A JP50147900 A JP 50147900A JP 14790075 A JP14790075 A JP 14790075A JP S5183784 A JPS5183784 A JP S5183784A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2458401A DE2458401C2 (en) | 1974-12-10 | 1974-12-10 | Thyristor controllable with light |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5183784A true JPS5183784A (en) | 1976-07-22 |
| JPS5823751B2 JPS5823751B2 (en) | 1983-05-17 |
Family
ID=5933065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50147900A Expired JPS5823751B2 (en) | 1974-12-10 | 1975-12-10 | Hikari Seigyo Thyristor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4001865A (en) |
| JP (1) | JPS5823751B2 (en) |
| CA (1) | CA1053354A (en) |
| DE (1) | DE2458401C2 (en) |
| GB (1) | GB1521107A (en) |
| SE (1) | SE407720B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583282A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Thyristor |
| JPS5856463A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Light energizing semiconductor device |
| JPS58101460A (en) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | Photo trigger thyristor |
| JPS5989462A (en) * | 1982-11-15 | 1984-05-23 | Toshiba Corp | Thyristor |
| JPS59124160A (en) * | 1982-12-29 | 1984-07-18 | Fuji Electric Corp Res & Dev Ltd | Optical thyristor |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU793421A3 (en) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Photothyristor |
| DE2715482C2 (en) * | 1977-04-06 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Thyristor controllable with light |
| US4812892A (en) * | 1978-03-30 | 1989-03-14 | Siemens Aktiengesellschaft | Light controllable thyristors |
| DE3268107D1 (en) * | 1981-06-30 | 1986-02-06 | Toshiba Kk | Thyristor |
| US4633282A (en) * | 1982-10-04 | 1986-12-30 | Rockwell International Corporation | Metal-semiconductor field-effect transistor with a partial p-type drain |
| US4831248A (en) * | 1987-08-07 | 1989-05-16 | Center For Innovative Technology | Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation |
| US4825061A (en) * | 1987-08-07 | 1989-04-25 | Center For Innovative Technology | Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction |
| EP0304032B1 (en) * | 1987-08-20 | 1993-01-27 | Siemens Aktiengesellschaft | Light controlled thyristor |
| JP3177971B2 (en) * | 1999-01-25 | 2001-06-18 | 日本電気株式会社 | Semiconductor device having resistance element |
| CN102227005B (en) * | 2011-06-10 | 2012-07-04 | 中国科学院半导体研究所 | Method for manufacturing silicon photodetector structure with nanometer points on surface and infrared response function |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4817634U (en) * | 1971-07-06 | 1973-02-28 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE311701B (en) * | 1966-07-07 | 1969-06-23 | Asea Ab | |
| JPS508315B1 (en) * | 1970-02-20 | 1975-04-03 | ||
| US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
-
1974
- 1974-12-10 DE DE2458401A patent/DE2458401C2/en not_active Expired
-
1975
- 1975-10-07 GB GB40930/75A patent/GB1521107A/en not_active Expired
- 1975-11-14 US US05/632,004 patent/US4001865A/en not_active Expired - Lifetime
- 1975-12-09 SE SE7513873A patent/SE407720B/en unknown
- 1975-12-09 CA CA241,337A patent/CA1053354A/en not_active Expired
- 1975-12-10 JP JP50147900A patent/JPS5823751B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4817634U (en) * | 1971-07-06 | 1973-02-28 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS583282A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Thyristor |
| JPH0136261B2 (en) * | 1981-06-30 | 1989-07-31 | Tokyo Shibaura Electric Co | |
| JPS5856463A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Light energizing semiconductor device |
| JPS58101460A (en) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | Photo trigger thyristor |
| JPS5989462A (en) * | 1982-11-15 | 1984-05-23 | Toshiba Corp | Thyristor |
| JPH0136712B2 (en) * | 1982-11-15 | 1989-08-02 | Tokyo Shibaura Electric Co | |
| JPS59124160A (en) * | 1982-12-29 | 1984-07-18 | Fuji Electric Corp Res & Dev Ltd | Optical thyristor |
| JPH0429232B2 (en) * | 1982-12-29 | 1992-05-18 |
Also Published As
| Publication number | Publication date |
|---|---|
| SE407720B (en) | 1979-04-09 |
| CA1053354A (en) | 1979-04-24 |
| JPS5823751B2 (en) | 1983-05-17 |
| US4001865A (en) | 1977-01-04 |
| DE2458401A1 (en) | 1976-06-16 |
| SE7513873L (en) | 1976-06-11 |
| DE2458401C2 (en) | 1982-06-24 |
| GB1521107A (en) | 1978-08-09 |