JPS58101460A - Photo trigger thyristor - Google Patents

Photo trigger thyristor

Info

Publication number
JPS58101460A
JPS58101460A JP56200523A JP20052381A JPS58101460A JP S58101460 A JPS58101460 A JP S58101460A JP 56200523 A JP56200523 A JP 56200523A JP 20052381 A JP20052381 A JP 20052381A JP S58101460 A JPS58101460 A JP S58101460A
Authority
JP
Japan
Prior art keywords
firing
trigger
auxiliary
current
cathode electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56200523A
Other languages
Japanese (ja)
Inventor
Kazuhiko Niwayama
和彦 庭山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56200523A priority Critical patent/JPS58101460A/en
Publication of JPS58101460A publication Critical patent/JPS58101460A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a photo trigger thyristor which has no erroneous firing without decreasing trigger sensitivity by leading a trigger current terminal from the cathode electrode of an auxiliary SCR and flowing the trigger current at the forcibly firing time. CONSTITUTION:A trigger current terminal 14 is led from the cathode electrode 9 of an auxiliary SCRC in the SCR of the structure similar to the conventional one. When the trigger current terminal is led from the cathode electrode 11 of the second auxiliary SCRd, a large current is improperly required for firing. When the trigger current is flowed to the terminal 14 at the forcibly firing time, the firing can be performed at the suitable magnitude of about several A, thereby preventing erroneous firing and facilitating the firing at the necessary time. Since the photodetecting area of the photodetector is not defected, the phototrigger sensitivity is not decreased.

Description

【発明の詳細な説明】 この発明は光トリガ・サイリスタの改良に関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION This invention relates to improvements in optically triggered thyristors.

現在、知られている光トリガ・サイリスクにはそのゲー
トeの構造として多種多様の′ものがあるが、2段増幅
ゲート構造をとる場合が比較的多い。
At present, there are a wide variety of gate e structures in known optical trigger silices, but relatively often they have a two-stage amplification gate structure.

第1図は従来の21層増幅ゲート構造の光トリガ・サイ
リスクの構成を示す模式断面図で、(11はp形エミッ
タ層(pE層) 、[2)はn形ペース層(n1層) 
、(3)はp形ベース層(p、層)、(41は主サイリ
スタa(On形エミッタ層(nI III ) 、16
)はIl!Σ層(1)のS面に形成されたアノード電極
、(6)はn1層(4)の表面に形成された主サイリス
タaのカソード電極、17JはpB層(3)の表面の受
光部すに設けられた受光用凹部、(8)は受光部bK隣
接する第2段補助サイリスクGong層である。(91
はこのS1m補助サイリスタ0のカソード電極で第1&
11助サイリスタCのn1層(8Jの表面から91層(
1)の表面にわたって形成されている。叫はjll1段
補助サイリスタCと主サイリスタaとの間の1Ii2R
III助サイリスクdの01層である。(11)はこの
II2段補助サイすスタdのカソード電極で第2段補助
サイリスクdのn1層叫の表面から91層(3)の表面
にわたって形成されている。α欝はアノード端子、舖は
カソード端子である。
Figure 1 is a schematic cross-sectional view showing the configuration of a conventional 21-layer amplification gate structure optical trigger silice (11 is a p-type emitter layer (pE layer), [2] is an n-type space layer (n1 layer)
, (3) is the p-type base layer (p, layer), (41 is the main thyristor a (On-type emitter layer (nI III ), 16
) is Il! The anode electrode formed on the S surface of the Σ layer (1), (6) the cathode electrode of the main thyristor a formed on the surface of the n1 layer (4), and 17J the light receiving part on the surface of the pB layer (3). The light-receiving recess provided in (8) is the second stage auxiliary Sirisk Gong layer adjacent to the light-receiving part bK. (91
is the cathode electrode of this S1m auxiliary thyristor 0.
11th layer of thyristor C (91st layer from the surface of 8J)
1) is formed over the surface. The noise is 1Ii2R between jll1 stage auxiliary thyristor C and main thyristor a.
This is the 01 layer of III Suke Sai Risk d. (11) is the cathode electrode of this II two-stage auxiliary cylinder d, and is formed from the surface of the n1 layer of the second-stage auxiliary cylinder d to the surface of the 91st layer (3). α is an anode terminal or a cathode terminal.

このように構成された2段増幅ゲー町構導の光トリガ・
サイリスクでは、受光部すに入射した光によって発生し
た小さい励起電流は、@1段補助サイリスタCを点弧さ
せる。これによって[1段補助サイリスタCには4rl
Lt11aれ、これが第2段補助サイリスタdのゲート
電流になる。そして、この11t流は第1段補助サイリ
スタCによって増幅され、光による励起電流よりも太き
く、82段補助サイリス・りdを点弧させるのに十分な
大きさになる。このようにして@2段補助サイリスタd
は点弧する。以下同様にして、*g*補助サイすスクd
によって増幅された電流が主サイリスタaを点弧させる
。以上のようにして光トリガ・サイリスク全面のターン
オンが完了する。
The optical trigger of the two-stage amplification game town structure configured in this way
In Thyrisk, a small excitation current generated by the light incident on the light receiving part fires the @1 stage auxiliary thyristor C. As a result, [1st stage auxiliary thyristor C has 4rl]
Lt11a, which becomes the gate current of the second stage auxiliary thyristor d. This 11t current is amplified by the first-stage auxiliary thyristor C, and becomes larger than the excitation current caused by light and sufficient to fire the 82-stage auxiliary thyristor d. In this way @2-stage auxiliary thyristor d
fires. In the same way, *g* auxiliary size screen d
The current amplified by ignites the main thyristor a. In the manner described above, the turn-on of the entire surface of the light-triggered cyrisk is completed.

ところで、サイリスクを含む装置では、事故時などにサ
イリスクを強制点弧させねばならないものがある。そし
て、このようなときの強制点弧の方法には光によるもの
と電流によるものとがあるが、緊急応答性の点から電流
による強制点弧の方法が採用されることが多く、従来は
受光部すに電極を設け、この電極からの電流によって1
llJR補助サイリスタCを点弧させ、つづいて#Ia
段補助サイリスタとおよび主サイリスタaを順次点弧さ
せる方法がとられていた。
By the way, some devices that include a cyrisk must forcibly ignite the cyrisk in the event of an accident or the like. There are two methods of forced ignition in such cases, one using light and the other using electric current, but from the standpoint of emergency responsiveness, forced ignition using electric current is often adopted; An electrode is provided on the part, and the current from this electrode causes 1
llJR auxiliary thyristor C is fired, then #Ia
A method has been adopted in which the stage auxiliary thyristor and the main thyristor a are fired in sequence.

しかし、上述のような従来の方式では、げ)受光部すに
電極を設けるので、受光面積の一部が電極で覆われ光ト
リガ感度が低下する。(ロ)小電流でも点弧するので誤
点弧を生じ易い。などの欠点を有していた。
However, in the conventional method as described above, since an electrode is provided on the light receiving portion, a portion of the light receiving area is covered with the electrode, reducing the optical trigger sensitivity. (b) Since ignition occurs even with a small current, erroneous ignition is likely to occur. It had drawbacks such as:

この発明は以上のような点に鑑みてなされたもので、光
トリガ感度を低下させることなく、11atlL点弧感
度も余シ過敏でなく誤点弧の生じない、強制電流点弧用
電極つきの光トリガ・サイリスクを提供することを目的
としている。
This invention has been made in view of the above points, and provides a light with a forced current firing electrode that does not reduce the optical trigger sensitivity, is not overly sensitive to 11atlL firing sensitivity, and does not cause false firing. It is intended to provide trigger risk.

112図はこの発明の一実施例の構成を示す模式断li
t図で、第1図の従来例と同等部分は同一符号で示す、
第1段補助サイリスタCのカソード電極(91からトリ
ガ電流端子(l荀を引き出し′た以外は第1図の従来例
と全く同一である。トリガ電流端子0慟を経て流すトリ
ガ電流によって、この光トリガ・サイリスクを強制点弧
させる動作は、あらためて説明の要はないであろう。ま
た、電流点弧感度を過敏にしないという点からは第2段
補助サイリスタdのカソード電極(lりからトリガ電流
端子を引出してもよい訳であるが、この場合には逆に点
弧に大きな□亀flL(数十アンペア411度)を必要
とし不適当である。
Figure 112 is a schematic cross-section showing the configuration of an embodiment of this invention.
In the t figure, parts equivalent to the conventional example in Fig. 1 are indicated by the same symbols.
It is exactly the same as the conventional example shown in Fig. 1 except that the trigger current terminal (1) is drawn out from the cathode electrode (91) of the first stage auxiliary thyristor C. There is no need to explain the operation of forcibly firing the trigger thyristor.Also, from the point of view of not making the current firing sensitivity too sensitive, the trigger current is Although it would be possible to pull out the terminal, in this case, a large □torque flL (several tens of amperes 411 degrees) is required for ignition, which is inappropriate.

以上説明したように、この発明になる光トリガ・サイリ
スクでは3段増幅ゲート構造を有しており、第1段補助
サイリスクのカソード電極からトリガ電流端子を引出し
て強制点弧時にこのトリガ電流端子を介してトリガ電流
を流して点弧させるようにしたので、受光部の受光面積
を損することはなく、従って光トリガ感度を低下させろ
ことがない。しかも電流点弧時のトリガ電流は適当な大
きさく数アンペアm度)であり、誤点弧は防止され、し
かも必要なときには容易に点弧できる。
As explained above, the optical trigger thyrisk according to the present invention has a three-stage amplification gate structure, and the trigger current terminal is drawn out from the cathode electrode of the first stage auxiliary thyrisk, and this trigger current terminal is used during forced ignition. Since the trigger current is caused to flow through the trigger, the light-receiving area of the light-receiving section is not lost, and therefore, the optical trigger sensitivity is not reduced. In addition, the trigger current at the time of current ignition is a suitable size (several amperes m degrees), preventing erroneous ignition and facilitating ignition when necessary.

【図面の簡単な説明】[Brief explanation of the drawing]

II1図は従来の光トリガ・サイリスタの基本構成を示
す模式断面図9第2図はこの発明の一実施例の構成を示
す模式断面図である。 図において、aは主サイリスク部、bは受光部。 Cは第1JI補助サイリスタ部、(91はそのカソード
電極、 (141はトリガ電流端子、dは第2段補助サ
イリスク部である。 なお、図中同一符号は同一または相当部分を示す。 代理人 葛野信 −(外1名う
FIG. II1 is a schematic cross-sectional view showing the basic structure of a conventional optical trigger thyristor; FIG. 2 is a schematic cross-sectional view showing the structure of an embodiment of the present invention. In the figure, a is the main cylindrical part, and b is the light receiving part. C is the first JI auxiliary thyristor section, (91 is its cathode electrode, (141 is the trigger current terminal, and d is the second stage auxiliary thyristor section. In addition, the same reference numerals in the figure indicate the same or equivalent parts. Agent: Kuzuno Shin - (1 other person)

Claims (1)

【特許請求の範囲】[Claims] (1)  受光部と11g1段補助サイリスク1st!
:第2段補助サイリスク部と主サイリスク部とからなる
2段増幅グー)111mを有するとともに上記il1段
補助サイリスク部のカソード電極に強制点弧時に電流を
流し上記#I2段補助サイすスク部を点弧させるトリガ
電l11fI11子を膚え九ことを特徴とする光トリガ
・サイリスク。
(1) Light receiving part and 11g 1st stage auxiliary Sailisk 1st!
: A two-stage amplification group consisting of a second-stage auxiliary syringe section and a main auxiliary sys-risk section) has a length of 111m, and a current is passed through the cathode electrode of the first-stage auxiliary sys-risk section during forced ignition to cause the #I second-stage auxiliary sys-risk section to flow. A light-triggered silicate characterized by having a trigger voltage for ignition.
JP56200523A 1981-12-11 1981-12-11 Photo trigger thyristor Pending JPS58101460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56200523A JPS58101460A (en) 1981-12-11 1981-12-11 Photo trigger thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56200523A JPS58101460A (en) 1981-12-11 1981-12-11 Photo trigger thyristor

Publications (1)

Publication Number Publication Date
JPS58101460A true JPS58101460A (en) 1983-06-16

Family

ID=16425722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56200523A Pending JPS58101460A (en) 1981-12-11 1981-12-11 Photo trigger thyristor

Country Status (1)

Country Link
JP (1) JPS58101460A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0163477A2 (en) * 1984-05-29 1985-12-04 Westinghouse Electric Corporation Method for triggering light triggered thyristors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183784A (en) * 1974-12-10 1976-07-22 Siemens Ag
JPS5229189A (en) * 1975-08-29 1977-03-04 Siemens Ag Optical controlled thyristor
JPS5599773A (en) * 1979-01-25 1980-07-30 Nec Corp Silicon control rectifier device
JPS5683070A (en) * 1979-11-09 1981-07-07 Siemens Ag Light spot arc thyristor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5183784A (en) * 1974-12-10 1976-07-22 Siemens Ag
JPS5229189A (en) * 1975-08-29 1977-03-04 Siemens Ag Optical controlled thyristor
JPS5599773A (en) * 1979-01-25 1980-07-30 Nec Corp Silicon control rectifier device
JPS5683070A (en) * 1979-11-09 1981-07-07 Siemens Ag Light spot arc thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0163477A2 (en) * 1984-05-29 1985-12-04 Westinghouse Electric Corporation Method for triggering light triggered thyristors

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