JPS5599773A - Silicon control rectifier device - Google Patents
Silicon control rectifier deviceInfo
- Publication number
- JPS5599773A JPS5599773A JP799079A JP799079A JPS5599773A JP S5599773 A JPS5599773 A JP S5599773A JP 799079 A JP799079 A JP 799079A JP 799079 A JP799079 A JP 799079A JP S5599773 A JPS5599773 A JP S5599773A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thyristors
- gate
- cathode
- auxiliary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To enlarge the rate effect and increase the gate trigger speed by an externally fitted resistor, by setting the short pattern of the main thyristors and reducing the area of the 3rd base region of the auxiliary thyristors. CONSTITUTION:An n1 layer consists of an n-type 20-30OMEGAcm silicon substrate, and by operating punch-through diffusion of a p-type impurity from both sides of the substrate, it is isolated. Next, by the conventional selective diffusion method, main thyristors P1n1, P2n2 and auxiliary thyristors P1n2, P3n3 are produced. Next, cathode 2, made of Al, wiring 3, which passes a part of the p-layer, which is to become the gate of the main thyristors, and gate electrode 5 of the auxiliary thyristors are formed. Cathode 2 is connected to n2-layer and p2-layer, and the part connected to p2-layer becomes a short part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP799079A JPS5599773A (en) | 1979-01-25 | 1979-01-25 | Silicon control rectifier device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP799079A JPS5599773A (en) | 1979-01-25 | 1979-01-25 | Silicon control rectifier device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599773A true JPS5599773A (en) | 1980-07-30 |
Family
ID=11680841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP799079A Pending JPS5599773A (en) | 1979-01-25 | 1979-01-25 | Silicon control rectifier device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599773A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101460A (en) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | Photo trigger thyristor |
JPS60149164A (en) * | 1984-01-17 | 1985-08-06 | Toshiba Corp | Semiconductor device |
US4949147A (en) * | 1985-08-06 | 1990-08-14 | Thomson-Csf | Sensitive thyristor with integrated gate-cathode decoupling |
EP0396104A2 (en) * | 1989-05-01 | 1990-11-07 | Kabushiki Kaisha Toshiba | Bidirectional control rectifying semiconductor apparatus |
-
1979
- 1979-01-25 JP JP799079A patent/JPS5599773A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101460A (en) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | Photo trigger thyristor |
JPS60149164A (en) * | 1984-01-17 | 1985-08-06 | Toshiba Corp | Semiconductor device |
US4949147A (en) * | 1985-08-06 | 1990-08-14 | Thomson-Csf | Sensitive thyristor with integrated gate-cathode decoupling |
EP0396104A2 (en) * | 1989-05-01 | 1990-11-07 | Kabushiki Kaisha Toshiba | Bidirectional control rectifying semiconductor apparatus |
EP0635889A1 (en) * | 1989-05-01 | 1995-01-25 | Kabushiki Kaisha Toshiba | Bidirectional control rectifying semiconductor apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5522840A (en) | Semiconductor switching element and manufacturing method thereof | |
JPS5691478A (en) | Manufacture of punch-through type diode | |
JPS5599773A (en) | Silicon control rectifier device | |
JPS57176773A (en) | Semiconductor device and manufacture thereof | |
JPS54137982A (en) | Semiconductor device and its manufacture | |
JPS5595363A (en) | Thyristor | |
JPS5593262A (en) | Semiconductor device | |
JPS567472A (en) | Semiconductor device | |
JPS5263687A (en) | Semiconductor device | |
JPS56165358A (en) | Semiconductor device | |
JPS5623776A (en) | Light trigger type semiconductor device | |
JPS5591866A (en) | Manufacture of semiconductor device | |
JPS57100721A (en) | Manufacture of semiconductor device | |
JPS5563879A (en) | Semiconductor device | |
JPS56134762A (en) | Manufacturing of bipolar semiconductor device | |
JPS5382276A (en) | Production of semiconductor device | |
JPS538577A (en) | Lateral thyristor | |
JPS5316587A (en) | Semiconductor device | |
JPS55111156A (en) | Semiconductor device | |
JPS57198657A (en) | Semiconductor device | |
JPS55143068A (en) | Insulated gate semiconductor device | |
JPS55158673A (en) | Triac | |
JPS55163861A (en) | Semiconductor device and manufacturing thereof | |
GB1206480A (en) | Making contact with a semiconductor device with emitter short-circuits | |
JPS5780769A (en) | Semiconductor device |