JPS5596684A - Light drive semiconductor controlled rectifier - Google Patents

Light drive semiconductor controlled rectifier

Info

Publication number
JPS5596684A
JPS5596684A JP397279A JP397279A JPS5596684A JP S5596684 A JPS5596684 A JP S5596684A JP 397279 A JP397279 A JP 397279A JP 397279 A JP397279 A JP 397279A JP S5596684 A JPS5596684 A JP S5596684A
Authority
JP
Japan
Prior art keywords
light
electrode
layer
thyristor
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP397279A
Other languages
Japanese (ja)
Other versions
JPS5945232B2 (en
Inventor
Nobutake Konishi
Tsutomu Yao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54003972A priority Critical patent/JPS5945232B2/en
Publication of JPS5596684A publication Critical patent/JPS5596684A/en
Publication of JPS5945232B2 publication Critical patent/JPS5945232B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To prevent a light thyristor from damaging when generating an overvoltage and improve the light trigger sensitivity of a light drive semiconductor controlled rectifier by providing overvoltage protecting electrode means partially in a light gate region.
CONSTITUTION: The resistance of a p-type base layer pB is not high in a high withstand voltage thyristor. Since the voltage drop at the layer pB of a photodetector does not, however, contribute to triggering, the voltage drop at this portion should be preferably low. Accordingly, after an electrode 300 is provided in a light gate region to concentrate photocurrent generated in the photodetector by a light control signal given through an optical fiber 30 from a photodiode 2 once to the electrode 300, the photocurrent is flown to the layer pB directly under the n-type emitter layer nE connected to the cathode electrode 140 of an auxiliary thyristor. Thus, wasteful voltage drop at the layer pB in the photodetector can be lowered. On the other hand, since a current from a protector 4 can pass through the electrode 30 in case that an overvoltage is applied thereto, it can operate as a normal p-gate to thereby prevent the thyristor from damaging locally.
COPYRIGHT: (C)1980,JPO&Japio
JP54003972A 1979-01-19 1979-01-19 Light-driven semiconductor-controlled rectifier Expired JPS5945232B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54003972A JPS5945232B2 (en) 1979-01-19 1979-01-19 Light-driven semiconductor-controlled rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54003972A JPS5945232B2 (en) 1979-01-19 1979-01-19 Light-driven semiconductor-controlled rectifier

Publications (2)

Publication Number Publication Date
JPS5596684A true JPS5596684A (en) 1980-07-23
JPS5945232B2 JPS5945232B2 (en) 1984-11-05

Family

ID=11571975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54003972A Expired JPS5945232B2 (en) 1979-01-19 1979-01-19 Light-driven semiconductor-controlled rectifier

Country Status (1)

Country Link
JP (1) JPS5945232B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196568A (en) * 1981-05-27 1982-12-02 Fuji Electric Corp Res & Dev Ltd Photo trigger thyristor
JPS59124160A (en) * 1982-12-29 1984-07-18 Fuji Electric Corp Res & Dev Ltd Optical thyristor
JP2021122034A (en) * 2020-01-31 2021-08-26 新光電気工業株式会社 Electrostatic chuck and board fixing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196568A (en) * 1981-05-27 1982-12-02 Fuji Electric Corp Res & Dev Ltd Photo trigger thyristor
JPS59124160A (en) * 1982-12-29 1984-07-18 Fuji Electric Corp Res & Dev Ltd Optical thyristor
JPH0429232B2 (en) * 1982-12-29 1992-05-18
JP2021122034A (en) * 2020-01-31 2021-08-26 新光電気工業株式会社 Electrostatic chuck and board fixing device

Also Published As

Publication number Publication date
JPS5945232B2 (en) 1984-11-05

Similar Documents

Publication Publication Date Title
GB1301245A (en)
JPS5596684A (en) Light drive semiconductor controlled rectifier
JPS5684032A (en) Protective device for thyristor bulb
JPS57124909A (en) Output transistor protection circuit
JPS551111A (en) Semiconductor device
US4212024A (en) Solid-state switching circuit employing photon coupling suitable for construction in form of integrated circuit
JPS5595362A (en) Turn-off thyristor
JPS5593262A (en) Semiconductor device
JPS5624987A (en) Gaas infrared ray emitting diode and manufacture thereof
JPS5541022A (en) Photo oscillation circuit
JPS5469721A (en) Protection system for thyristor converter
JPS5457973A (en) Semiconductor device for switching control
JPS5839264A (en) Protecting system for overvoltage of photo-thyristor
JPS54120573A (en) Ignition system of thyristor converter
JPS5519863A (en) Light-driven type thyristor
JPS5558568A (en) Semiconductor device
SU677083A1 (en) Pulse shaper
JPS56112766A (en) Semiconductor light emitting device
JPS54118547A (en) Transistor circuit with protection circuit
JPS6449262A (en) Optical thyristor
JPS56167373A (en) Semiconductor light sensor
JPS54102993A (en) Optical semiconductor device
JPS57160181A (en) Light amplifying semiconductor device
JPS554940A (en) Semi-conductor integrated circuit
JPS5516560A (en) Solid-state pickup unit