JPS5558568A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5558568A
JPS5558568A JP13118378A JP13118378A JPS5558568A JP S5558568 A JPS5558568 A JP S5558568A JP 13118378 A JP13118378 A JP 13118378A JP 13118378 A JP13118378 A JP 13118378A JP S5558568 A JPS5558568 A JP S5558568A
Authority
JP
Japan
Prior art keywords
voltage
layer
collector
transistor
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13118378A
Other languages
Japanese (ja)
Inventor
Fumiyoshi Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13118378A priority Critical patent/JPS5558568A/en
Publication of JPS5558568A publication Critical patent/JPS5558568A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the high voltage breakdown of a transistor without increasing the number of components.
CONSTITUTION: An n+-layer 2 is formed on n-type base plate 1 (collector), and p-layer 3 is formed to be connected to base layer 4. After this p-type base layer 4 is formed. n-type emitter so formed in p-layer 4, and by opening SiO2 6, electrodes 7, 8 are formed. Electrode 9 is fitted to base plate 1. In this structure, when a high voltage is impressed on the collector, the pn junction of layers 2, 3 functions as a constant voltage diode, and the base voltage rises to the impressed voltage minus the voltage drop of the constant voltage diode. For this reason, the transistor, which has been in the state of off, is once again set on, and the collector voltage is controlled below the collector-emitter breakdown voltage. As a result, no breakdown occurs in the transistor.
COPYRIGHT: (C)1980,JPO&Japio
JP13118378A 1978-10-25 1978-10-25 Semiconductor device Pending JPS5558568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13118378A JPS5558568A (en) 1978-10-25 1978-10-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13118378A JPS5558568A (en) 1978-10-25 1978-10-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5558568A true JPS5558568A (en) 1980-05-01

Family

ID=15051949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13118378A Pending JPS5558568A (en) 1978-10-25 1978-10-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5558568A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734361A (en) * 1980-08-11 1982-02-24 Toshiba Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5734361A (en) * 1980-08-11 1982-02-24 Toshiba Corp Semiconductor device
JPS6348191B2 (en) * 1980-08-11 1988-09-28 Tokyo Shibaura Electric Co

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