JPS5558568A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5558568A JPS5558568A JP13118378A JP13118378A JPS5558568A JP S5558568 A JPS5558568 A JP S5558568A JP 13118378 A JP13118378 A JP 13118378A JP 13118378 A JP13118378 A JP 13118378A JP S5558568 A JPS5558568 A JP S5558568A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- layer
- collector
- transistor
- breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To prevent the high voltage breakdown of a transistor without increasing the number of components.
CONSTITUTION: An n+-layer 2 is formed on n-type base plate 1 (collector), and p-layer 3 is formed to be connected to base layer 4. After this p-type base layer 4 is formed. n-type emitter so formed in p-layer 4, and by opening SiO2 6, electrodes 7, 8 are formed. Electrode 9 is fitted to base plate 1. In this structure, when a high voltage is impressed on the collector, the pn junction of layers 2, 3 functions as a constant voltage diode, and the base voltage rises to the impressed voltage minus the voltage drop of the constant voltage diode. For this reason, the transistor, which has been in the state of off, is once again set on, and the collector voltage is controlled below the collector-emitter breakdown voltage. As a result, no breakdown occurs in the transistor.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13118378A JPS5558568A (en) | 1978-10-25 | 1978-10-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13118378A JPS5558568A (en) | 1978-10-25 | 1978-10-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5558568A true JPS5558568A (en) | 1980-05-01 |
Family
ID=15051949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13118378A Pending JPS5558568A (en) | 1978-10-25 | 1978-10-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5558568A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734361A (en) * | 1980-08-11 | 1982-02-24 | Toshiba Corp | Semiconductor device |
-
1978
- 1978-10-25 JP JP13118378A patent/JPS5558568A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5734361A (en) * | 1980-08-11 | 1982-02-24 | Toshiba Corp | Semiconductor device |
JPS6348191B2 (en) * | 1980-08-11 | 1988-09-28 | Tokyo Shibaura Electric Co |
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