JPS55105359A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55105359A
JPS55105359A JP1295479A JP1295479A JPS55105359A JP S55105359 A JPS55105359 A JP S55105359A JP 1295479 A JP1295479 A JP 1295479A JP 1295479 A JP1295479 A JP 1295479A JP S55105359 A JPS55105359 A JP S55105359A
Authority
JP
Japan
Prior art keywords
layer
type
collector
biased
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1295479A
Other languages
Japanese (ja)
Other versions
JPS6359262B2 (en
Inventor
Tetsuji Yuasa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1295479A priority Critical patent/JPS55105359A/en
Publication of JPS55105359A publication Critical patent/JPS55105359A/en
Publication of JPS6359262B2 publication Critical patent/JPS6359262B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a high reliable device capable of withstanding high reverse voltage by making the withstanding reverse voltage of the base-collector short pnp diode not depending upon threshold voltage but upon the pn junction. CONSTITUTION:The p-type collector layer 6 is surrounded by the n<+> base layer 7 in the n epitaxial layer 3 on the p-type substrate 1 to prevent a leak between the p- type emitter layer 5 or p-type collector layer 6 and the p-type isolated layer 4 by a drop of the threshold voltage. Also no p-type collector layer is provided directly below the anode 9 on the layer 5 to prevent the action of the electrode 9 as a parasitic gate on the insulating film 8 between the emitter layer 5 and the collector layer 6. The anode 9 and the cathode 10, which is on the layer 6, are not connected to the n epitaxial layer 3 between the p-type emitter layer 5 and the collector layer 6 in order that the parasitic MOS effect is not developped when the diode is reverse- biased. And the electrode 9 is protruded on the layer 3 to stabilize the charge in the neighborhood of the layer 5 when forward-biased.
JP1295479A 1979-02-07 1979-02-07 Semiconductor device Granted JPS55105359A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1295479A JPS55105359A (en) 1979-02-07 1979-02-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1295479A JPS55105359A (en) 1979-02-07 1979-02-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55105359A true JPS55105359A (en) 1980-08-12
JPS6359262B2 JPS6359262B2 (en) 1988-11-18

Family

ID=11819659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1295479A Granted JPS55105359A (en) 1979-02-07 1979-02-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55105359A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425029A (en) * 1990-05-16 1992-01-28 Mitsubishi Electric Corp Lateral transistor
JPH0513425A (en) * 1991-07-08 1993-01-22 Nec Corp Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01180061U (en) * 1988-06-11 1989-12-25
JPH03288067A (en) * 1990-04-04 1991-12-18 Ketsuto & Ketsuto:Kk Metal gasket

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140490A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Lateral transistor
JPS52133167U (en) * 1976-04-02 1977-10-08

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140490A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Lateral transistor
JPS52133167U (en) * 1976-04-02 1977-10-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0425029A (en) * 1990-05-16 1992-01-28 Mitsubishi Electric Corp Lateral transistor
JPH0513425A (en) * 1991-07-08 1993-01-22 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6359262B2 (en) 1988-11-18

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