JPH027192B2 - - Google Patents
Info
- Publication number
- JPH027192B2 JPH027192B2 JP58005326A JP532683A JPH027192B2 JP H027192 B2 JPH027192 B2 JP H027192B2 JP 58005326 A JP58005326 A JP 58005326A JP 532683 A JP532683 A JP 532683A JP H027192 B2 JPH027192 B2 JP H027192B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating seal
- semiconductor device
- metal
- semiconductor substrate
- external electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 claims description 66
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 17
- 239000013307 optical fiber Substances 0.000 claims description 15
- 230000001960 triggered effect Effects 0.000 claims description 7
- 230000008054 signal transmission Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 16
- 239000011247 coating layer Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
【発明の詳細な説明】
（利用分野）
本発明は光点弧形サイリスタなどの半導体装置
に係り、特に高電圧用途に対して好適な、信頼性
の高い放電防止構造を備えた半導体装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Application) The present invention relates to a semiconductor device such as a photo-triggered thyristor, and particularly to a semiconductor device equipped with a highly reliable discharge prevention structure suitable for high voltage applications.
（従来技術）
光点弧形サイリスタは、周知のように、光の照
射信号により順電圧阻止状態から導通状態にター
ンオンする機能を有する半導体制御整流素子であ
る。(Prior Art) As is well known, a light-ignited thyristor is a semiconductor-controlled rectifying element that has the function of turning on from a forward voltage blocking state to a conducting state in response to a light irradiation signal.
光点弧形サイリスタは、通常の電気ゲート点弧
形サイリスタと比較して、(1)主回路とゲート制御
回路とを電気的に絶縁できるため、ゲート制御回
路を簡略化でき、また(2)光ゲート信号のため電磁
誘導ノズルの影響を受けにくい等の利点がある。 Compared to normal electrical gate-ignited thyristors, optically triggered thyristors (1) can electrically isolate the main circuit and gate control circuit, which simplifies the gate control circuit; and (2) Since it is an optical gate signal, it has the advantage of being less affected by electromagnetic induction nozzles.
このため、最近、高電圧直流送電等のように、
サイリスタを多数個直列接続で使用する様な高電
圧変換装置への利用が注目されてきている。 For this reason, recently, as in the case of high voltage DC power transmission,
Its use in high-voltage converters that use a large number of thyristors connected in series is attracting attention.
しかし、光点弧形サイリスタは、電気ゲート形
サイリスタと比較して、光信号をサイリスタ素子
の半導体基体受光部まで導くために、数多くの部
品が必要となる。 However, compared to electrically gated thyristors, optically activated thyristors require a greater number of components to guide the optical signal to the semiconductor substrate light receiving portion of the thyristor element.
第１図は、光点弧形サイリスタの従来例の断面
略図を示し、第２図は第１図中の光信号伝送経路
の部分を拡大した断面図である。 FIG. 1 shows a schematic cross-sectional view of a conventional example of a light-ignited thyristor, and FIG. 2 is an enlarged cross-sectional view of a portion of the optical signal transmission path in FIG.
光サイリスタ素子１は、サイリスタ接合を有す
る半導体基体２の両側に低抵抗接触したアノード
電極３、カソード電極４を有している。さらに、
それら各電極３，４の外側には、アノード外部電
極５、カソード外部電極６が配設されている。 The optical thyristor element 1 has an anode electrode 3 and a cathode electrode 4 in low resistance contact with both sides of a semiconductor substrate 2 having a thyristor junction. moreover,
An anode external electrode 5 and a cathode external electrode 6 are disposed on the outside of each of the electrodes 3 and 4.
これら外部電極５，６には、金属フランジ７
Ａ，７Ｋが固着される。さらに両フランジ７Ａ，
７Ｋは、半導体基体２、アノード電極３、カソー
ド電極４、アノード外部電極５、カソード外部電
極６などよりなる組立構造体を包囲する円筒状の
絶縁性シール８の両端に、気密封着される。それ
故に、サイリスタ素子の内部は気密保持されてい
る。 These external electrodes 5 and 6 have metal flanges 7
A, 7K is fixed. Furthermore, both flanges 7A,
7K is hermetically sealed at both ends of a cylindrical insulating seal 8 that surrounds the assembled structure consisting of the semiconductor substrate 2, anode electrode 3, cathode electrode 4, anode external electrode 5, cathode external electrode 6, etc. Therefore, the inside of the thyristor element is kept airtight.
外部から光信号を伝送するための光フアイバ１
１は、絶縁シール８の一部を貫通する金属コネク
タ９に気密固定された光フアイバ１０と、例えば
金属袋ナツト１２などを用いて、光学的に結合さ
れる。それ故に、外部からの光信号は、光フアイ
バ１１および１０を介して、半導体基体２の受光
部へ導かれる。 Optical fiber 1 for transmitting optical signals from the outside
1 is optically coupled to an optical fiber 10 hermetically fixed to a metal connector 9 that penetrates a portion of an insulating seal 8 using, for example, a metal bag nut 12. Therefore, an optical signal from the outside is guided to the light receiving portion of the semiconductor substrate 2 via the optical fibers 11 and 10.
また、微弱な光信号を、効率よく半導体基体２
の受光部へ入射させるため、半導体基体２の近傍
の光フアイバ１０を半導体基体２の方向へ押え付
ける機構を具備することもある。 In addition, weak optical signals can be efficiently transferred to the semiconductor substrate 2.
A mechanism may be provided to press the optical fiber 10 in the vicinity of the semiconductor substrate 2 toward the semiconductor substrate 2 so that the light enters the light receiving section of the semiconductor substrate 2 .
このような従来例において、光フアイバ１１は
電気的に高抵抗の絶縁性物質から成り、光フアイ
バ１０も同様である。従つて、金属袋ナツト１
２、および絶縁シール８の一部に、外部電極から
隔離し、かつ絶縁して設けた金属コネクタ９は、
アノード電極３、アノード外部電極５およびカソ
ード電極４、カソード外部電極６からは電気的に
絶縁されている。 In such a conventional example, the optical fiber 11 is made of an electrically high resistance insulating material, and the optical fiber 10 is also made of an insulating material. Therefore, metal bag nut 1
2, and a metal connector 9 provided in a part of the insulating seal 8 to be isolated and insulated from the external electrode.
It is electrically insulated from the anode electrode 3, the anode external electrode 5, the cathode electrode 4, and the cathode external electrode 6.
この様な光点弧形サイリスタが複数個直列接続
された構成で、アノードとカソード間に、順方向
あるいは逆方向に電圧が印加された状態では、電
気的に浮いている金属コネクタ９、金属袋ナツト
１２は、空間電界あるいは絶縁シール８のアノー
ド・カソード方向の電位降下分布に応じて、アノ
ード・カソード間の電位差によつて決まる一定の
電位に保持される。 In a configuration in which a plurality of such light-igniting thyristors are connected in series, when a voltage is applied between the anode and the cathode in the forward or reverse direction, the metal connector 9 and the metal bag that are electrically floating The nut 12 is held at a constant potential determined by the potential difference between the anode and the cathode, depending on the spatial electric field or the potential drop distribution in the anode-cathode direction of the insulating seal 8.
また、最悪の場合には、前記金属コネクタ９な
どがある一定量の電荷を帯電する場合もありう
る。 Furthermore, in the worst case, the metal connector 9 may be charged with a certain amount of charge.
前述のような状態の時、サイリスタが光信号に
よつてターンオンしたり、あるいはアノード・カ
ソード間の電圧が反転したりすると、電気的に浮
いている金属コネクタ９や金属袋ナツト１２の電
位は、この変化に対して速やかに追従することが
できないため、前記金属コネクタ９などと、各サ
イリスタのアノード電極３あるいはカソード電極
４との電位差が、著しく大きくなることがある。 In the above-mentioned state, when the thyristor is turned on by an optical signal or the voltage between the anode and cathode is reversed, the potential of the electrically floating metal connector 9 and metal bag nut 12 becomes Since it is not possible to quickly follow this change, the potential difference between the metal connector 9 and the anode electrode 3 or cathode electrode 4 of each thyristor may become significantly large.
このため、金属コネクタ９や金属袋ナツト１２
と、金属フランジ７Ａ，７Ｋ、アノード電極３、
アノード外部電極５、カソード電極４、およびカ
ソード外部電極６などとの間の、空間距離の小さ
い部分、あるいは絶縁シール８の表面に沿つた沿
面距離の短かい部分で、電界強度が絶縁耐力の限
界を超え、沿面放電などを生じてしまうことがあ
る。 Therefore, the metal connector 9 and the metal bag nut 12
, metal flanges 7A, 7K, anode electrode 3,
In areas where the spatial distance between the anode external electrode 5, cathode electrode 4, cathode external electrode 6, etc. is small, or the creepage distance along the surface of the insulating seal 8 is short, the electric field strength is at the limit of dielectric strength. , and creeping discharge may occur.
このような放電が発生すると、サイリスタの信
頼性が低下するのはもちろん、多数個のサイリス
タを直列接続した装置では、稼動時に、各々のサ
イリスタに過電圧が印加される懸念があり、著し
い場合にはサイリスタが破壊されてしまう等の欠
点がある。 When such a discharge occurs, not only does the reliability of the thyristor deteriorate, but in a device in which a large number of thyristors are connected in series, there is a risk that overvoltage may be applied to each thyristor during operation, and in severe cases, There are drawbacks such as the thyristor being destroyed.
（目的）
本発明の目的は、上記した従来技術の欠点をな
くし、放電現象の発生しない、信頼性の優れた光
点弧形サイリスタを提供することにある。(Objective) An object of the present invention is to eliminate the drawbacks of the prior art described above, and to provide a highly reliable light-ignited thyristor that does not cause a discharge phenomenon.
（概要）
前記の目的を達成するために、本発明において
は、絶縁シールの中間に設けられた金属コネクタ
を、アノード電極またはカソード電極、あるいは
これらと同電位の部分に導電（低抵抗）接続する
手段を付加し、さらに前記導電接続手段を前記絶
縁シールの少なくとも内部に配置するようにして
いる。(Summary) In order to achieve the above object, in the present invention, a metal connector provided in the middle of an insulating seal is electrically conductively (low resistance) connected to an anode electrode, a cathode electrode, or a part having the same potential as these. means are added, and the electrically conductive connecting means is disposed at least within the insulating seal.
（実施例）
以下に、本発明の特徴とするところを具体的な
実施例により詳述する。第３図は、本発明の第一
実施例の要部断面図であり、第２図と同様に、光
点弧形サイリスタ内部の、光信号伝送経路部分を
拡大した図である。(Example) Below, the features of the present invention will be explained in detail using specific examples. FIG. 3 is a sectional view of a main part of the first embodiment of the present invention, and, like FIG. 2, is an enlarged view of the optical signal transmission path inside the optically activated thyristor.
金属コネクタ９は、金属リード線１３Ａによつ
て、金属フランジ７Ｋに（したがつて、カソード
外部電極６に）接続され、また金属リード線１３
Ｂによつてカソード電極４に電気的低抵抗接触し
ている。 The metal connector 9 is connected to the metal flange 7K (and thus to the cathode external electrode 6) by a metal lead wire 13A, and is also connected to the metal lead wire 13A.
B makes electrical low resistance contact with the cathode electrode 4.
このため、サイリスタを動作させる際、金属コ
ネクタ９（および、金属袋ナツト１２）は、常
に、カソード電極４と同電位に保持されることに
なり、放電現象は発生しなくなる。 Therefore, when operating the thyristor, the metal connector 9 (and the metal cap nut 12) are always held at the same potential as the cathode electrode 4, and no discharge phenomenon occurs.
なお、通常の光サイリスタでは、光ゲート信号
はカソード側から取り入れられるため、金属コネ
クタ９の位置がカソード側金属フランジ７Ｋの方
に近くなつているが、アノード側金属フランジ７
Ａの近くに金属コネクタ９が設置されている場合
は、アノード側の金属フランジ７Ａあるいはアノ
ード外部電極５、アノード電極３に金属リード線
で接続しても、本実施例と同様の効果が得られる
ことは明らかである。 Note that in a normal optical thyristor, the optical gate signal is taken in from the cathode side, so the position of the metal connector 9 is closer to the cathode side metal flange 7K, but the position of the metal connector 9 is closer to the anode side metal flange 7K.
If the metal connector 9 is installed near A, the same effect as this example can be obtained by connecting it to the metal flange 7A on the anode side, the anode external electrode 5, or the anode electrode 3 with a metal lead wire. That is clear.
また、これらの場合、第３図に示したように、
金属コネクタ９を外部電極および金属フランジの
両者に導電接続することは必ずしも必要でなく、
いずれか一方に接続するだけでもよく、あるいは
その他のカソードまたはアノード電極と同電位の
部分に導電接続（または低抵抗接続）するだけで
も、本実施例と同様の効果が得られることも明ら
かである。 In addition, in these cases, as shown in Figure 3,
It is not necessarily necessary to conductively connect the metal connector 9 to both the external electrode and the metal flange;
It is also clear that the same effect as in this example can be obtained by simply connecting it to either one, or by simply connecting it conductively (or connecting it with low resistance) to a part that has the same potential as the other cathode or anode electrode. .
第４図は本発明の第二実施例の要部断面図であ
る。 FIG. 4 is a sectional view of a main part of a second embodiment of the present invention.
本実施例の第３図と異なる点は、金属リード線
１３Ａ，１３Ｂの代りに、金属コネクタ９の絶縁
シール８への取付位置から、アノード側およびカ
ソード側金属フランジ７Ａ，７Ｋの一方（本実施
例の場合は、カソード側金属フランジ７Ｋ）ま
で、絶縁シール８の内側表面にそつて、低抵抗被
膜層１４を設けたことである。 The difference from FIG. 3 in this embodiment is that instead of the metal lead wires 13A, 13B, one of the anode side and cathode side metal flanges 7A, 7K (this embodiment In this example, a low resistance coating layer 14 is provided along the inner surface of the insulating seal 8 up to the cathode side metal flange 7K).
このような構造により、第一実施例の場合と同
様の効果を達成できることは明らかである。 It is clear that such a structure can achieve the same effects as in the first embodiment.
なお、この場合、低抵抗被膜層１４は、絶縁シ
ール８の所定の部分に金属膜を蒸着して形成する
か、あるいは、予め金属メタライズしておき、更
に、その上に金属ろうを流しておくことにより形
成することができる。このようにすれば、更に良
い低抵抗被膜層を容易に形成することができる。 In this case, the low-resistance coating layer 14 is formed by vapor depositing a metal film on a predetermined portion of the insulating seal 8, or by metallizing it in advance and then pouring a metal solder thereon. It can be formed by In this way, an even better low resistance coating layer can be easily formed.
第５図は本発明の第三実施例の要部断面図であ
る。 FIG. 5 is a sectional view of a main part of a third embodiment of the present invention.
本実施例の第３図、第４図と異なる点は、金属
リード線１３Ａ，１３Ｂや低抵抗被膜層１４を用
いる代りに、素子内部の光伝送路となる光フアイ
バ１０の外表面に、金属被覆層１７を設けたこと
である。 The difference from FIGS. 3 and 4 in this embodiment is that instead of using metal lead wires 13A, 13B and a low-resistance coating layer 14, a metal is used on the outer surface of the optical fiber 10, which serves as an optical transmission path inside the device. This is because the covering layer 17 is provided.
この金属被覆層１７は、図からも明らかなよう
に、その一端において、金属コネクタ９と電気的
に低抵抗接触する。また、金属被覆層１７の他端
は、光フアイバ１０全体を固定する金属固定部品
１５に連結され、導電接続される。そして、さら
にスプリング１６により、金属コネクタ９および
金属被覆層１７は、カソード外部電極６へ電気的
に低抵抗接続される。 As is clear from the figure, this metal coating layer 17 makes electrical low resistance contact with the metal connector 9 at one end thereof. Further, the other end of the metal coating layer 17 is connected to a metal fixing component 15 that fixes the entire optical fiber 10 and is electrically connected. Further, the spring 16 electrically connects the metal connector 9 and the metal coating layer 17 to the cathode external electrode 6 with low resistance.
それ故に、金属コネクタ９はカソード電極４と
同電位となり、本発明の効果が得られる。また、
光フアイバ１０を金属で直接被覆することによ
り、光伝送効率を、金属被覆層１７がない場合よ
り更に改善できる効果も期待できる。 Therefore, the metal connector 9 has the same potential as the cathode electrode 4, and the effects of the present invention can be obtained. Also,
By directly coating the optical fiber 10 with metal, it can be expected that the optical transmission efficiency can be further improved compared to the case where the metal coating layer 17 is not provided.
なお、固定部品１５が金属でない場合は、光フ
アイバ１０の金属被覆層１７の他の部分で、カソ
ード外部電極６に電気的に接続することができ
る。 Note that if the fixed component 15 is not made of metal, it can be electrically connected to the cathode external electrode 6 at another portion of the metal coating layer 17 of the optical fiber 10.
第６図は本発明の第四実施例の要部断面図、第
７図はそのＡ−Ａ線断面図である。光点弧形サイ
リスタの場合、第１図〜第５図にも示した様に、
光信号をサイリスタ内部に導入するため、絶縁シ
ール８の一方の主電極（通常はカソード）にかた
よつた部分に、光フアイバ１０の一端および金属
コネクタ９を気密性良く設ける必要がある。 FIG. 6 is a sectional view of a main part of a fourth embodiment of the present invention, and FIG. 7 is a sectional view thereof taken along line A--A. In the case of a light-ignited thyristor, as shown in Figures 1 to 5,
In order to introduce the optical signal into the thyristor, it is necessary to provide one end of the optical fiber 10 and the metal connector 9 with good airtightness on the part of the insulating seal 8 that is bent toward one main electrode (usually the cathode).
ここで、実際の光フアイバの直径は1.0〜3.0mm
位であり、金属コネクタ９も含めた外径は2.0〜
4.0mm程度にもなる。この寸法は、電気ゲートサ
イリスタの場合の、ゲート信号とり入れ金属パイ
プ径が約1.0mmであるのに比較すると、極めて大
きい。 Here, the actual optical fiber diameter is 1.0~3.0mm
The outer diameter including the metal connector 9 is 2.0~
It becomes about 4.0mm. This dimension is extremely large compared to the diameter of the gate signal intake metal pipe of approximately 1.0 mm in the case of an electric gate thyristor.
絶縁シール８の一方の主電極側に、このように
大きな孔を設けようとすると、絶縁シールの製造
時に破損する恐れがあり、難しい技術を必要とす
る。 If it is attempted to provide such a large hole on one main electrode side of the insulating seal 8, there is a risk that the insulating seal will be damaged during manufacturing, and difficult techniques will be required.
その対策として、本実施例では、あらかじめ光
信号導入部分の絶縁シール８に切り欠き部を設け
ておき、この個所に精度よくはめ合う金属片１９
を挿入するようにしている。このような構成によ
り上記欠点をなくし、また同時に、金属コネクタ
９を一方の主電極側へ、容易かつ確実に低抵抗接
触させることができる。 As a countermeasure against this, in this embodiment, a notch is provided in advance in the insulating seal 8 at the optical signal introduction part, and a metal piece 19 is fitted into this part with precision.
I am trying to insert . With such a configuration, the above-mentioned drawbacks can be eliminated, and at the same time, the metal connector 9 can be easily and reliably brought into low-resistance contact with one of the main electrodes.
なお、この場合、金属片１９は金属コネクタ９
と一体物でもよく、あるいは、別々のものをろう
付あるいは溶接したものでも良い。また、金属片
１９と絶縁シール８との接着は、絶縁シール８と
金属フランジ７とを気密接着するのと同等の技術
により可能である。 In this case, the metal piece 19 is connected to the metal connector 9
It may be an integral part, or it may be a separate piece brazed or welded. Further, the metal piece 19 and the insulating seal 8 can be bonded together using a technique similar to that used for airtightly adhering the insulating seal 8 and the metal flange 7.
第８図は、ダイオード素子に本発明を適用した
例を示す断面図である。絶縁シールは下側絶縁シ
ール８Ｄと上側絶縁シール８Ｕとに分離されてお
り、この間を金属フランジ１８にて気密接続して
いる。 FIG. 8 is a sectional view showing an example in which the present invention is applied to a diode element. The insulating seal is separated into a lower insulating seal 8D and an upper insulating seal 8U, which are airtightly connected by a metal flange 18.
第４図の場合と同様に、低抵抗被膜層１４を絶
縁シールの内側に設けることにより、金属フラン
ジ１８の電位を一方の主電極即ちアノードあるい
はカソード電極（図示の例では、カソード電極）
と同電位に保持することができ、放電現象を防止
できる。 As in the case of FIG. 4, by providing the low resistance coating layer 14 on the inside of the insulating seal, the potential of the metal flange 18 is transferred to one of the main electrodes, that is, the anode or cathode electrode (in the illustrated example, the cathode electrode).
It is possible to maintain the same potential as the voltage and prevent the discharge phenomenon.
（効果）
以上の説明から明らかなように、本発明によれ
ば、サイリスタやダイオード素子などを気密封止
する絶縁シールの中間に両外部電極から隔離、絶
縁して配置される金属部分が、全て電気的にアノ
ードあるいはカソード電極に低抵抗接続され、こ
れと同電位に保持されるので、放電現象を防止で
き、信頼性の優れた光点弧形サイリスタなどの半
導体装置が得られる。(Effects) As is clear from the above description, according to the present invention, the metal part that is placed between the insulating seal that hermetically seals the thyristor, diode element, etc., and is isolated and insulated from both external electrodes, Since it is electrically connected to the anode or cathode electrode with low resistance and held at the same potential, a discharge phenomenon can be prevented and a highly reliable semiconductor device such as a light-triggered thyristor can be obtained.
また、低抵抗被膜層などの導電接続手段が、絶
縁シールの内側に設けられるので、外側に設ける
場合のように、
(1) 雰囲気−特に湿度の影響により、経時的に
徐々に、低抵抗被膜層やはんだ層が酸化してい
き、
(2) 低抵抗が次第に高抵抗になつてしまい
(3) 著しい場合は絶縁性となつてしまう、
などの問題がなくなり、経時的な特性の劣化が防
止され、長期的な信頼性の確保が期待できる。 In addition, since the conductive connection means, such as a low-resistance coating layer, is provided on the inside of the insulating seal, as in the case of providing it on the outside, (1) Atmosphere - The low-resistance coating may gradually become weaker over time, especially due to the influence of humidity. This eliminates problems such as (2) low resistance gradually becoming high resistance and (3) insulating properties in severe cases due to oxidation of layers and solder layers, and prevents deterioration of characteristics over time. It is expected that long-term reliability will be ensured.
第１図は従来の光点弧形サイリスタの断面略
図、第２図は従来の光点弧形サイリスタの断面部
分拡大図、第３図、第４図、第５図および第６図
は、それぞれ本発明の第一ないし第四の実施例の
要部断面図、第７図は第６図のＡ−Ａ線にそう断
面図、第８図は本発明をダイオード素子に適用し
た場合の実施例の断面図である。
１……光サイリスタ、２……半導体基体、３…
…アノード電極、４……カソード電極、５……ア
ノード外部電極、６……カソード外部電極、７，
１８……金属フランジ、８……絶縁シール、９…
…金属コネクタ、１０，１１……光フアイバ、１
３Ａ，Ｂ……金属リード線、１４……低抵抗被膜
層、１７……金属被覆層。
Figure 1 is a schematic cross-sectional view of a conventional light-triggered thyristor, Figure 2 is an enlarged cross-sectional view of a conventional light-triggered thyristor, and Figures 3, 4, 5, and 6 are respectively 7 is a sectional view taken along line A-A in FIG. 6, and FIG. 8 is an embodiment in which the present invention is applied to a diode element. FIG. 1... Optical thyristor, 2... Semiconductor substrate, 3...
... Anode electrode, 4 ... Cathode electrode, 5 ... Anode external electrode, 6 ... Cathode external electrode, 7,
18...Metal flange, 8...Insulating seal, 9...
...Metal connector, 10, 11...Optical fiber, 1
3A, B...Metal lead wire, 14...Low resistance coating layer, 17...Metal coating layer.
Claims (1)
成された半導体基体と、前記半導体基体を挾ん
で、その両側に配置されたカソード外部電極およ
びアノード外部電極と、前記両外部電極にそれぞ
れ気密に固着され、前記半導体基体を包囲して、
これを気密封止する絶縁シールと、前記絶縁シー
ルの中間に前記両外部電極から隔離され、かつ絶
縁されて配置された導電部材とを有する半導体装
置において、 前記絶縁シールの少なくとも内側に設けられ、
前記導電部材を前記半導体基体の主電極の一方と
同電位に保持する導電手段を具備したことを特徴
とする半導体装置。 ２ 半導体装置が光点弧形サイリスタであり、導
電部材が信号伝送用光フアイバを引出すための金
属コネクタであることを特徴とする特許請求の範
囲第１項記載の半導体装置。 ３ その両主面に、少なくとも一対の主電極が形
成された半導体基体と、前記半導体基体を挾ん
で、その両側に配置されたカソード外部電極およ
びアノード外部電極と、前記両外部電極にそれぞ
れ気密に固着され、前記半導体基体を包囲して、
これを気密封止する絶縁シールと、前記絶縁シー
ルの中間に前記両外部電極から隔離して配置され
た導電部材とを有する半導体装置において、 前記絶縁シールには、前記導電部材を貫通状態
で装填固着するための切込部が形成され、前記切
込部に導電材が気密充填されたことを特徴とする
半導体装置。 ４ 半導体装置が光点弧形サイリスタであり、導
電部材が信号伝送用光フアイバを引出すための金
属コネクタであることを特徴とする特許請求の範
囲第３項記載の半導体装置。[Scope of Claims] 1. A semiconductor substrate having at least one pair of main electrodes formed on both main surfaces thereof, a cathode external electrode and an anode external electrode disposed on both sides of the semiconductor substrate, and both the semiconductor substrate and the anode external electrode. each of which is airtightly fixed to the external electrode and surrounds the semiconductor substrate;
A semiconductor device including an insulating seal that hermetically seals the insulating seal, and a conductive member disposed between the insulating seal and isolated from both the external electrodes and insulated, the conductive member being provided at least inside the insulating seal,
A semiconductor device comprising a conductive means for holding the conductive member at the same potential as one of the main electrodes of the semiconductor substrate. 2. The semiconductor device according to claim 1, wherein the semiconductor device is a light-triggered thyristor, and the conductive member is a metal connector for pulling out a signal transmission optical fiber. 3. A semiconductor substrate having at least one pair of main electrodes formed on both main surfaces thereof, a cathode external electrode and an anode external electrode arranged on both sides of the semiconductor substrate, and an airtight connection between the two external electrodes. fixedly attached and surrounding the semiconductor substrate;
In the semiconductor device, the semiconductor device includes an insulating seal that hermetically seals the insulating seal, and a conductive member disposed between the insulating seal and separated from both the external electrodes, wherein the insulating seal is loaded with the conductive member in a penetrating state. 1. A semiconductor device, characterized in that a notch for fixing is formed, and the notch is hermetically filled with a conductive material. 4. The semiconductor device according to claim 3, wherein the semiconductor device is a light-triggered thyristor, and the conductive member is a metal connector for pulling out a signal transmission optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005326A JPS59132165A (en) | 1983-01-18 | 1983-01-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005326A JPS59132165A (en) | 1983-01-18 | 1983-01-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132165A JPS59132165A (en) | 1984-07-30 |
| JPH027192B2 true JPH027192B2 (en) | 1990-02-15 |
Family
ID=11608116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58005326A Granted JPS59132165A (en) | 1983-01-18 | 1983-01-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132165A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561076A (en) * | 1978-10-31 | 1980-05-08 | Toshiba Corp | Light-driven semiconductor device |
| JPS55117285A (en) * | 1979-02-28 | 1980-09-09 | Toshiba Corp | Light drive semiconductor device |
| JPS5662379A (en) * | 1979-10-29 | 1981-05-28 | Toshiba Corp | Optical operated semiconductor |
| JPS5718358A (en) * | 1980-07-08 | 1982-01-30 | Hitachi Ltd | Photodriven type thyristor |
| JPS58157161A (en) * | 1982-03-12 | 1983-09-19 | Toshiba Corp | Photo-driven type semiconductor device |
-
1983
- 1983-01-18 JP JP58005326A patent/JPS59132165A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561076A (en) * | 1978-10-31 | 1980-05-08 | Toshiba Corp | Light-driven semiconductor device |
| JPS55117285A (en) * | 1979-02-28 | 1980-09-09 | Toshiba Corp | Light drive semiconductor device |
| JPS5662379A (en) * | 1979-10-29 | 1981-05-28 | Toshiba Corp | Optical operated semiconductor |
| JPS5718358A (en) * | 1980-07-08 | 1982-01-30 | Hitachi Ltd | Photodriven type thyristor |
| JPS58157161A (en) * | 1982-03-12 | 1983-09-19 | Toshiba Corp | Photo-driven type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59132165A (en) | 1984-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0562550B1 (en) | Chip carrier for optical device | |
| US4899204A (en) | High voltage switch structure with light responsive diode stack | |
| JPS6333307B2 (en) | ||
| US5497031A (en) | Semiconductor device having semiconductor chip with backside electrode | |
| US5479029A (en) | Sub-mount type device for emitting light | |
| JPH0383368A (en) | Semiconductor device | |
| JPS58182285A (en) | Piezoelectric pressure sensor | |
| NL7907254A (en) | METHOD FOR PACKING AT LEAST AN OPTO-ELECTRONIC SEMICONDUCTOR DEVICE AND PACKAGING, OBTAINED BY THIS METHOD | |
| CA1043008A (en) | Photo coupler | |
| JPH027192B2 (en) | ||
| US5115300A (en) | High-power semiconductor device | |
| US4651052A (en) | Device for picking up or displaying images having an externally-mounted semiconductor cathode | |
| GB2038554A (en) | Thyristor | |
| KR970071897A (en) | Field emission device and manufacturing method thereof | |
| US4757367A (en) | Light triggered semiconductor device with detachable auxiliary thyrister | |
| US4296427A (en) | Reverse conducting amplified gate thyristor with plate-like separator section | |
| CN101320763B (en) | Optical semiconducteur device | |
| GB2212326A (en) | Reduction of soft errors in semiconductor integrated circuit | |
| US4628147A (en) | Semiconductor housings | |
| JP2507405B2 (en) | Image tube | |
| JPS61107783A (en) | Semiconductor laser device | |
| JPH06119970A (en) | El element | |
| JPH0414842Y2 (en) | ||
| JPS60161668A (en) | Thyristor | |
| JPS6021569A (en) | Photodirect ignition type thyristor device and manufacture thereof |