JPS58157161A - Photo-driven type semiconductor device - Google Patents
Photo-driven type semiconductor deviceInfo
- Publication number
- JPS58157161A JPS58157161A JP57039032A JP3903282A JPS58157161A JP S58157161 A JPS58157161 A JP S58157161A JP 57039032 A JP57039032 A JP 57039032A JP 3903282 A JP3903282 A JP 3903282A JP S58157161 A JPS58157161 A JP S58157161A
- Authority
- JP
- Japan
- Prior art keywords
- photo
- semiconductor device
- thyristor
- anode electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 230000000694 effects Effects 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims description 29
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- NBJBFKVCPBJQMR-APKOLTMOSA-N nff 1 Chemical compound C([C@H](NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H]1CCCN1C(=O)[C@H](CCCCN)NC(=O)[C@@H]1CCCN1C(=O)CC=1C2=CC=C(C=C2OC(=O)C=1)OC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCCCNC=1C(=CC(=CC=1)[N+]([O-])=O)[N+]([O-])=O)C(=O)NCC(O)=O)C1=CC=CC=C1 NBJBFKVCPBJQMR-APKOLTMOSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
仁の発明は、光信号をトリガとして用いる光トリガサイ
リスタ等の先駆１／ｋｌＩ半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] Jin's invention relates to pioneering 1/klI semiconductor devices such as optically triggered thyristors that use optical signals as triggers.
光信号をトリガとして用いる光トリガサイリスタ（以下
単に党サイリスクと称する）は、通常の電気トリガサイ
リスクと比較して多くの利点を有している。例えｉｆ、
ｆ−）回路と主回路（サイリスタ装置本体）とＯ電気的
絶縁性が優れ、ダート−路から混入する外部雑音による
誤−動作が極めて少ない、さらに、装置全体の小型化お
よび低価格化が容易に実現でき、信頼性も高い。このよ
うな利点を生かして、光サイリスタは、高電圧の電力変
換装置等に多用されている。Optical-triggered thyristors (hereinafter simply referred to as thyristors) that use optical signals as triggers have many advantages over ordinary electrically-triggered thyristors. For example, if
f-) Excellent electrical insulation between the circuit and the main circuit (thyristor device body), extremely little malfunction due to external noise coming in from the dirt road, and easy to downsize and lower the price of the entire device. It can be realized easily and is highly reliable. Taking advantage of these advantages, optical thyristors are often used in high-voltage power conversion devices and the like.
このような光サイリスタは、通常１１１１図に示すよう
なＮ’Ｍｌ工ｉ、ｆｉｌ、Ｐｍ、ぺ−７ｕｊ、Ｎｆｆ１
ベース３およびＰ！１ｉＩｌニオ、り４からなる４層構
造の半導体素子である。この光サイリスタの受光部（Ｎ
ｌｌ工建二定１の一部）ｓＫ’Ｊｔ、６が照射されると
、ターンオンの状態になり順方向・マイアスされ九アノ
ード７とカソード８間に電流が流れることになる。Such an optical thyristor usually has N'Ml engineering i, fil, Pm, P7uj, Nff1 as shown in Figure 1111.
Base 3 and P! It is a semiconductor element with a four-layer structure consisting of 1iIlNio and 4. The light receiving part of this optical thyristor (N
When sK'Jt, 6 is irradiated, it turns on and is biased in the forward direction, causing a current to flow between the anode 7 and cathode 8.
ところで、上記のような光サイリスタは、通常第２図に
示すような外囲器１１に収納され、外部環境から保護さ
れている。すなわち、光サイリスタ本体（以下単に光サ
イリスタと称する）１１は、６外囲器１２のアノード電
極１３ｍとカソード電極ＪＪｂ閏に設けられ、通常アノ
ード電＠ Ｉ Ｊ ａ Ｋ接続され良熱緩衝板１４によ
シ保持される。光サイリスタ１１のカソード側に設けら
れた受光部１５には、光を導く丸めの内部ライトガイド
１６の一端が例えばシリコンｆ五等の支持部材１７で固
定される。内部２イ）ガイド１６は、通常石英ガラス等
のオプティカルファイバであり、その日径紘例えば１−
程度である。そして、内部ライトガイド１＃の他の一端
は、外囲器１２の開口部１８で例えば外ｉ！１ＩｉＦ１
２の周ｉ！ＩＫ設けられるセラミ、夕等の絶縁体１＃に
気密に固定される。具体的にけ、内部ライトガイド１σ
の一端を例えば金属筒２１に低融点ガラス等で気密Ｋｒ
１Ａ定し、こＯ金属筒２１を外＠９１２の開口部１ａＦ
Ｃ気密Ｅｌ！定する。Incidentally, the optical thyristor as described above is usually housed in an envelope 11 as shown in FIG. 2 and protected from the external environment. That is, the optical thyristor main body (hereinafter simply referred to as an optical thyristor) 11 is provided at the anode electrode 13m and the cathode electrode JJb of the six envelopes 12, and is normally connected to the anode electrode @ I J a K and connected to the thermal buffer plate 14. It is well maintained. One end of a round internal light guide 16 for guiding light is fixed to the light receiving section 15 provided on the cathode side of the optical thyristor 11 with a support member 17 made of silicon F5 or the like. Internal 2a) The guide 16 is usually an optical fiber such as quartz glass, and its diameter is, for example, 1-
That's about it. The other end of the internal light guide 1# is connected to the outside i! at the opening 18 of the envelope 12, for example. 1IiF1
2 laps i! It is airtightly fixed to an insulator 1# such as ceramic or aluminum provided in the IK. Specifically, internal light guide 1σ
For example, one end of the metal cylinder 21 is made of low melting point glass or the like to be airtight with Kr.
1A, and remove the metal tube 21 from the opening 1aF of 912.
C airtight El! Set.
このような内部ライトガイド１６１１Ｃコネクタ部ｌＱ
ｔ介して外部ライトガイド（図示せず）が〔背景技術の
問題点〕
上記のように外囲ｅｋｌｌの側面から光６を導入ｆる構
造の光駆動型半導体装置では、例えば複数個組み合わせ
て、電力装置等に組み込む場合、取り扱いが容易である
などの利点がある。Such an internal light guide 1611C connector part lQ
[Background art problem] In a light-driven semiconductor device having a structure in which light 6 is introduced from the side surface of the outer enclosure ekll as described above, an external light guide (not shown) is connected through the external light guide (not shown), for example, by combining a plurality of light guides. When incorporated into a power device or the like, there are advantages such as ease of handling.
しかしながら、第２１１に示すように内部ライトガイド
１６を横方向から縦方向に約９０″に折シ曲げる必要が
ある。この場合、内部ライトガイド１６の湾一部（第２
囚の１６ａ）の曲率半径は、光伝送損失をおさえるため
、ある程度大きくする必要がある０通常、光透過率〔−
〕と曲率半径とは、第３図に示すように、内部ライトガ
イド１６０ロ径をノ母うメータとして一定の関係がある
。すなわち、通常内部ライトガイド１６の口径は１■φ
＠度であるため、十分な光透過率（１０ｏ［ニー］）を
得るには、曲率半径を１０■以上にする必要がある。し
たがって、従来では パ内部ライトガイド１＃の曲
率半径が比較的大きくなる丸め、例えば電気トリがサイ
リスタと比較して半導体装置全体の厚さが大きくなる。However, as shown in No. 211, it is necessary to bend the internal light guide 16 from the horizontal direction to the vertical direction by approximately 90''.
The radius of curvature of the curvature 16a) needs to be increased to some extent in order to suppress optical transmission loss.Normally, the optical transmittance [-
] and the radius of curvature have a certain relationship based on the diameter of the internal light guide 160, as shown in FIG. That is, the diameter of the internal light guide 16 is usually 1■φ.
Since the radius of curvature must be 10° or more in order to obtain sufficient light transmittance (10° [knee]). Therefore, in the conventional case, the radius of curvature of the internal light guide 1# is relatively large, for example, an electric tree has a large thickness of the entire semiconductor device compared to a thyristor.
そのため、例えば７ノード電極１１＆およびカッーｒ電
極１３ｂの厚さが大きくなｐ１熱抵抗が大きくなる。す
なわち、光サイリスク１１の接合部に発生する熱が放熱
しＫｍ＜＜なり、光サイリスタ１ノに熱による悪影響が
及ぼす欠点がありたＱ
〔発明の目的〕
この発明は、上記の事情を鑑みてなされたもので、光サ
イリスタの受光部に光を導く内部ライトガイドの湾曲部
の曲率半径が比較的大きくなり、装置全体の厚さが大き
くなった場合でも、光サイリスタに対する放熱効果を十
分得ることができ、高い信頼性を有する光駆動型半導体
装置を提供することを目的とする。Therefore, for example, the thickness of the 7-node electrode 11& and the curl electrode 13b becomes large, and the p1 thermal resistance becomes large. In other words, the heat generated at the junction of the optical thyristor 11 is dissipated to Km<<, and there is a drawback that the optical thyristor 1 is adversely affected by the heat. Even if the radius of curvature of the curved part of the internal light guide that guides light to the light receiving part of the optical thyristor becomes relatively large and the thickness of the entire device increases, the heat dissipation effect for the optical thyristor can be obtained sufficiently. It is an object of the present invention to provide an optically driven semiconductor device that can perform the following steps and has high reliability.
すなわち、この発！Ｉにおいては光サイリスタ等の受光
部に十分な伝送効率で光を導く内部ライトガイドを有す
る光駆動型半導体装置において、アノード電極およびカ
ン−ＰＩＥＩ１１の両者の少なくとも−１に金属製のフ
ィン等の放熱体を設ける（Ｏである。In other words, this departure! In I, in an optically driven semiconductor device having an internal light guide that guides light with sufficient transmission efficiency to a light receiving part such as an optical thyristor, a heat dissipating metal fin or the like is provided on at least -1 of both the anode electrode and the can-PIEI 11. Provide a body (O.
以下図面を参照してこの発明の一実施例について説明す
る。ｊｌ１４１１は、この発明に係る光駆動型半導体装
置の構成を示すもので、光サイリスタ１１は外囲器１１
のアノード電極１３＆およびカソード電極１１ｂ間に設
けられており、通常熱緩衝板１４上に保持されている。An embodiment of the present invention will be described below with reference to the drawings. jl1411 shows the configuration of the optically driven semiconductor device according to the present invention, in which the optical thyristor 11 is connected to the envelope 11.
It is provided between the anode electrode 13& and the cathode electrode 11b, and is usually held on a thermal buffer plate 14.
光サイリスタ１１の受光部Ｉｌｌには、光を導く内部ラ
イトガイド１−の一端がシリコンゴム尋の支持部材１１
で固定されている。さらに、内部ライトがイド１−のも
う一方の一端は、外囲器１２の開口部ｌ１１１Ｃ設けら
れる金属筒２１に低融点ガラス等で気密に固定されてい
る。そして、光源からの光６を受光部１５に導くために
、内部ライトガイド１＃には所定の曲率半径の湾曲部１
６ａが形成されている。この湾曲部１６ｍの曲率半径は
、内部ライトがイド１６の口径が１■φ１１度であれば
、１０−以上とする。それによ勤先透過率をｔｏｏ （
１）近＜Ｋｔでできる（ＩＥ３図に示す）。さらに上記
アノード電極ＩＪａおよびカンード電極１１ｂＯ両者に
は、光ナイリスタ１１の熱抵抗による放熱効果を促進す
るための放熱体４１、すなわち例えばアル建ニウムまた
は銅等のフィンが一体となって設けられている。なお、
他の構成は前記第２図に示す場合と同様であるため説明
は省略する。In the light receiving part Ill of the optical thyristor 11, one end of the internal light guide 1- for guiding light is a support member 11 made of silicone rubber.
is fixed. Further, the other end of the inner light 1- is airtightly fixed to a metal cylinder 21 provided in an opening l111C of the envelope 12 with low melting point glass or the like. In order to guide the light 6 from the light source to the light receiving part 15, the internal light guide 1# has a curved part 1 with a predetermined radius of curvature.
6a is formed. The radius of curvature of this curved portion 16m is set to be 10 or more if the diameter of the inner light 16 is 1×11 degrees. This increases the workplace transparency rate to too (
1) It can be done when near < Kt (as shown in IE3 diagram). Further, both the anode electrode IJa and the cando electrode 11bO are integrally provided with a heat dissipation body 41, that is, a fin made of aluminum or copper, etc., for promoting the heat dissipation effect due to the thermal resistance of the photonyristor 11. . In addition,
The other configurations are the same as those shown in FIG. 2, so their explanation will be omitted.
上記のような構成において、横方向からの光６を十分な
光伝送効率をもって光サイリスタ１１の受光部１５に導
くことができる。この場合、内部ライトがイド１６の湾
自部１１１ｈの曲率半径を十分大きくする必要があるた
め、半導体装置全体の厚みが大きくなる。その丸め、上
記のように主として７ノード電極ＪＪａおよびカソード
電極１３ｂの両者Ｏ厚みが大きくなシ、熱抵抗が大きく
なる。とζろで、第４図に示すように７ノード電極ＪＪ
ａおよび力、ンード電極ｆｊｂの両者に放熱体４１が設
けられているため、光サイリスタ１１の接合部で発生す
る熱は上記のように熱抵抗が大暑くなるにもかかわらず
、容易に放熱される。したがりて、熱による元サイリス
タ１１への悪影響を大幅に防止することができる。なお
、半導体装置全体の厚みを薄くするために、内部ライト
ガイド１６の口径を小さくすることが考えられる。しか
し壜から、この場合には、内部ライトガイドＩＣに光６
ｔ−導くための外部ライトガイド（図示せず）の口径も
小さくする必要がある。そのため、この外部ライトガイ
ドと：″源との結合効率が極端に低下して、結果的光サ
イリスタ１１の受光部１５への光伝送効率を大幅に低下
させることになり、望ましくない。In the above configuration, the light 6 from the lateral direction can be guided to the light receiving section 15 of the optical thyristor 11 with sufficient optical transmission efficiency. In this case, it is necessary for the internal light to have a sufficiently large radius of curvature of the curved portion 111h of the id 16, which increases the thickness of the entire semiconductor device. Due to the rounding, the thermal resistance increases mainly because the thickness of both the 7-node electrode JJa and the cathode electrode 13b is large as described above. and ζ, the 7-node electrode JJ as shown in FIG.
Since the heat radiator 41 is provided on both the terminal electrode fjb and the terminal electrode fjb, the heat generated at the junction of the optical thyristor 11 is easily radiated, even though the thermal resistance becomes very hot as described above. Ru. Therefore, the adverse effect of heat on the original thyristor 11 can be largely prevented. Note that in order to reduce the thickness of the entire semiconductor device, it is conceivable to reduce the diameter of the internal light guide 16. However, from the bottle, in this case, the light 6 is transmitted to the internal light guide IC.
The diameter of the external light guide (not shown) for t-guiding also needs to be small. Therefore, the coupling efficiency between this external light guide and the source is extremely reduced, resulting in a significant reduction in the light transmission efficiency to the light receiving section 15 of the optical thyristor 11, which is undesirable.
なお、上記実ｍｎにおいてアノード電極３２ａおよびカ
ソード電極Ｊｊｂの両者に放熱体４１を設けたが、これ
に限ることなくどちらか一方のみでもよい・
〔発明の効果〕
以上詳述したようにこの発明によれば、横方向からの光
を光サイリスタの受光部に内部ライにおいて、光伝送効
率を高めるためＫＦＰ３部ライトライトガイド部の曲率
や径が比較的大きくなり、装置全体の厚さが大きくなる
場合でも、光サイリスタに対する放熱効果を十分高める
ことができる。したがって、光サイリスタに対する熱の
悪影響を大幅に防止して、蟲り信頼性を得ることができ
るものである。Although the heat sink 41 is provided on both the anode electrode 32a and the cathode electrode Jjb in the above actual mn, the heat dissipation body 41 is not limited to this, and only either one may be provided. [Effects of the Invention] As described in detail above, the present invention According to the above, in order to increase the light transmission efficiency by internally directing light from the lateral direction to the light receiving part of the optical thyristor, the curvature and diameter of the KFP 3 light guide part are relatively large, which increases the thickness of the entire device. However, the heat dissipation effect for the optical thyristor can be sufficiently enhanced. Therefore, the adverse effect of heat on the optical thyristor can be largely prevented and reliability can be achieved.
第１図は従来の光トリｔサイリスタの構成を示す断面図
、第２図は従来の光駆動型半導体装置の構成図、第３図
はその内部ライ）ｆｆイドの口径に対する曲率半径と光
透過率ｏＩＩｌｓｔ説明する図、第４図はこの発明の一
実施例に係る党駆動飄半導体装置の構成図である。
１１−・元サイリスタ、１１−・・外ｌ！ｌ器、Ｊｊｍ
・・・アノード電極、１３ｂ−・カソード電極、１６・
・・内部ライトガイド、４１−放熱体。
出願人代理人 弁理士 鈴 江 武 彦第１図Figure 1 is a cross-sectional view showing the configuration of a conventional optical tri-thyristor, Figure 2 is a configuration diagram of a conventional optically driven semiconductor device, and Figure 3 is its internal line. FIG. 4 is a diagram illustrating the structure of a semiconductor device with a drive shaft according to an embodiment of the present invention. 11-・Former thyristor, 11-・Outside l! l vessel, Jjm
・・・Anode electrode, 13b-・Cathode electrode, 16・
...internal light guide, 41-heat dissipation body. Applicant's agent Patent attorney Takehiko Suzue Figure 1
Claims (1)
する外囲器と、この外囲器に設けられるアノード電極お
よびカソード電極と、上記外囲器内に設けられて上記半
導体素子の受光部に光を導き所定の曲率半径の湾一部を
有する内。 部ライトガイドと、上記アノード電極およびカソード電
極の両者の少なくとも一方に設けられる放熱効果を有す
る放熱体とを具備していることを％黴とする光駆動製半
導体装置。[Claims] A semiconductor element driven by an optical signal, an envelope housing the semiconductor element, an anode electrode and a cathode electrode provided in the envelope, and a semiconductor element driven by an optical signal, an anode electrode and a cathode electrode provided in the envelope; The inside has a curved part with a predetermined radius of curvature that guides light to the light receiving part of the semiconductor element. 1. An optically driven semiconductor device comprising: a light guide; and a heat dissipating body having a heat dissipating effect, which is provided on at least one of the anode electrode and the cathode electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039032A JPS58157161A (en) | 1982-03-12 | 1982-03-12 | Photo-driven type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57039032A JPS58157161A (en) | 1982-03-12 | 1982-03-12 | Photo-driven type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58157161A true JPS58157161A (en) | 1983-09-19 |
Family
ID=12541763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57039032A Pending JPS58157161A (en) | 1982-03-12 | 1982-03-12 | Photo-driven type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157161A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132165A (en) * | 1983-01-18 | 1984-07-30 | Hitachi Ltd | Semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4848082A (en) * | 1971-10-21 | 1973-07-07 | ||
| JPS55117285A (en) * | 1979-02-28 | 1980-09-09 | Toshiba Corp | Light drive semiconductor device |
| JPS5662379A (en) * | 1979-10-29 | 1981-05-28 | Toshiba Corp | Optical operated semiconductor |
-
1982
- 1982-03-12 JP JP57039032A patent/JPS58157161A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4848082A (en) * | 1971-10-21 | 1973-07-07 | ||
| JPS55117285A (en) * | 1979-02-28 | 1980-09-09 | Toshiba Corp | Light drive semiconductor device |
| JPS5662379A (en) * | 1979-10-29 | 1981-05-28 | Toshiba Corp | Optical operated semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132165A (en) * | 1983-01-18 | 1984-07-30 | Hitachi Ltd | Semiconductor device |
| JPH027192B2 (en) * | 1983-01-18 | 1990-02-15 | Hitachi Ltd |
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