JP2017103351A - Ultraviolet light emitting device and ultraviolet light irradiating device - Google Patents

Ultraviolet light emitting device and ultraviolet light irradiating device Download PDF

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JP2017103351A
JP2017103351A JP2015235560A JP2015235560A JP2017103351A JP 2017103351 A JP2017103351 A JP 2017103351A JP 2015235560 A JP2015235560 A JP 2015235560A JP 2015235560 A JP2015235560 A JP 2015235560A JP 2017103351 A JP2017103351 A JP 2017103351A
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ultraviolet light
ultraviolet
light emitting
emitting device
window member
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JP6712855B2 (en
JP2017103351A5 (en
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加藤 裕幸
Hiroyuki Kato
裕幸 加藤
和与至 谷口
Kazuyoshi Taniguchi
和与至 谷口
松田 純司
Junji Matsuda
純司 松田
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

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  • Physical Or Chemical Processes And Apparatus (AREA)
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Abstract

PROBLEM TO BE SOLVED: To provide an ultraviolet light emitting device with reduced light loss.SOLUTION: A deep ultraviolet LED element 5 is mounted on a submount 6 in a recess 1a of an LTCC substrate 1 and an ultraviolet passing window member 10A is provided on an upper part of the LTCC substrate 1 so as to cover the recess 1a of the LTCC substrate 1. The ultraviolet passing window member 10A has openings 10A-1 to 10A-6 on the deep ultraviolet LED elements 5-1 to 5-6.SELECTED DRAWING: Figure 1

Description

本発明は紫外線発光装置及び紫外線照射装置に関する。   The present invention relates to an ultraviolet light emitting device and an ultraviolet irradiation device.

紫外線発光装置において、特に、210〜310nmの短波長領域の紫外線は、消毒、殺菌、浄化用等としての紫外線照射装置に用いられる。   In the ultraviolet light emitting device, in particular, ultraviolet light in a short wavelength region of 210 to 310 nm is used for an ultraviolet irradiation device for disinfection, sterilization, purification and the like.

図13は従来の紫外線発光装置を示す断面図である(参照:特許文献1)。図13において、紫外線発光装置は、凹部101aが形成され、凹部101aを囲む上部101bを有する基板101と、基板101の凹部101a内のサブマウント103上に搭載された紫外線発光ダイオード(LED)素子102と、基板101の凹部101aを覆うように設けられた紫外線透過窓部材104と、基板101の上部101bと紫外線透過窓部材104との間に設けられた封止部材としての樹脂接着層105とによって構成される。また、サブマウント103と基板101の配線パッドとの間はワイヤ106a、106bによって電気的に接続される。図13においては、紫外線LED素子102から発生した紫外線ULは紫外線透過窓部材104を透過して外部へ出射される。紫外線発光装置においては、紫外線LED素子102を樹脂封止すると、樹脂が紫外線によって変質劣化して装置の信頼性が低下するので、その代りに、石英ガラス等よりなる紫外線透過窓部材104によって封止する。   FIG. 13 is a cross-sectional view showing a conventional ultraviolet light emitting device (see Patent Document 1). In FIG. 13, the ultraviolet light emitting device includes a substrate 101 having a recess 101a and having an upper portion 101b surrounding the recess 101a, and an ultraviolet light emitting diode (LED) element 102 mounted on a submount 103 in the recess 101a of the substrate 101. And an ultraviolet transmissive window member 104 provided so as to cover the concave portion 101a of the substrate 101, and a resin adhesive layer 105 as a sealing member provided between the upper portion 101b of the substrate 101 and the ultraviolet transmissive window member 104. Composed. Further, the submount 103 and the wiring pads of the substrate 101 are electrically connected by wires 106a and 106b. In FIG. 13, the ultraviolet light UL generated from the ultraviolet LED element 102 passes through the ultraviolet light transmitting window member 104 and is emitted to the outside. In the ultraviolet light emitting device, when the ultraviolet LED element 102 is resin-sealed, the resin is deteriorated and deteriorated by ultraviolet rays, and the reliability of the device is lowered. Instead, the ultraviolet LED element 102 is sealed by an ultraviolet transmissive window member 104 made of quartz glass or the like. To do.

尚、紫外線透過窓部材104が存在しない場合には、光損失が生じないが、手等がワイヤ106a、106bに触れて断線し、又は手等が紫外線LED素子102に触れて汚染することがあり、この結果、装置の信頼性が低下する。   In the case where the ultraviolet transmissive window member 104 is not present, light loss does not occur, but a hand or the like may be disconnected by touching the wires 106a and 106b, or a hand or the like may be contaminated by touching the ultraviolet LED element 102. As a result, the reliability of the apparatus decreases.

特開2012−227511号公報JP 2012-227511 A

しかしながら、図13に示す従来の紫外線発光装置においては、紫外線透過窓部材104たとえば石英の透過率Tは、100%ではなく、表面反射層等の影響を受けて反射光R等となり、また、斜光Sもあり、この結果、透過率Tは92%程度である。実際には、反射率の入射角度依存性等を考慮すれば、紫外線透過窓部材104の透過率Tは90%以下であり、少なくとも10%以上の光損失が生じて光出力が低下するという課題がある。   However, in the conventional ultraviolet light emitting device shown in FIG. 13, the transmittance T of the ultraviolet transmissive window member 104 such as quartz is not 100%, but becomes reflected light R or the like due to the influence of the surface reflection layer or the like. S, and as a result, the transmittance T is about 92%. Actually, considering the dependency of the reflectance on the incident angle, etc., the transmittance T of the ultraviolet transmissive window member 104 is 90% or less, and at least 10% or more of light loss occurs, resulting in a decrease in light output. There is.

上述の課題を解決するために、本発明に係る紫外線発光装置は、凹部が形成され、凹部を囲む上部を有する基板と、基板の凹部内に設けられた紫外線発光素子と、基板の凹部を覆うように基板の上部に設けられた紫外線通過窓部材とを具備し、紫外線通過窓部材は紫外線発光素子上に開口部を有するものである。つまり、紫外線通過窓部材は枠構造をなしている。   In order to solve the above-described problems, an ultraviolet light emitting device according to the present invention covers a substrate having a recess and having an upper portion surrounding the recess, an ultraviolet light emitting element provided in the recess of the substrate, and the recess of the substrate. In this way, an ultraviolet light passing window member provided on the upper portion of the substrate is provided, and the ultraviolet light passing window member has an opening on the ultraviolet light emitting element. That is, the ultraviolet ray passing window member has a frame structure.

また、本発明に係る紫外線照射装置は、処理ガス又は処理水を流すためのケーシングと、ケーシングの外面に設けられた上述の紫外線発光装置の少なくとも1つとを具備するものである。   Moreover, the ultraviolet irradiation device according to the present invention includes a casing for flowing the processing gas or the processing water, and at least one of the above-described ultraviolet light emitting devices provided on the outer surface of the casing.

本発明によれば、紫外線発光素子上に開口部を有する枠構造の紫外線通過窓部材により紫外線発光素子の光損失を抑制し、光出力を向上することができる。また、紫外線通過窓部材の枠構造により紫外線発光素子の汚染を防止することができる。   ADVANTAGE OF THE INVENTION According to this invention, the optical loss of an ultraviolet light emitting element can be suppressed and the optical output can be improved with the ultraviolet-ray passage window member of the frame structure which has an opening part on an ultraviolet light emitting element. Further, contamination of the ultraviolet light emitting element can be prevented by the frame structure of the ultraviolet ray passing window member.

本発明に係る紫外線発光装置の第1の実施の形態を示す上面図である。It is a top view which shows 1st Embodiment of the ultraviolet-ray light-emitting device based on this invention. 図1の紫外線発光装置のII−II線断面図である。It is the II-II sectional view taken on the line of the ultraviolet light-emitting device of FIG. 図1の紫外線通過窓部材の上面図である。It is a top view of the ultraviolet-ray passage window member of FIG. 図1の紫外線通過窓部材を取外した紫外線発光装置の上面図である。It is a top view of the ultraviolet light-emitting device which removed the ultraviolet-ray passage window member of FIG. 本発明に係る紫外線発光装置の第2の実施の形態を示す上面図である。It is a top view which shows 2nd Embodiment of the ultraviolet-ray light-emitting device based on this invention. 図5の紫外線通過窓部材の上面図である。It is a top view of the ultraviolet-ray passage window member of FIG. 本発明に係る紫外線発光装置の第3の実施の形態を示す上面図である。It is a top view which shows 3rd Embodiment of the ultraviolet-ray light-emitting device based on this invention. 図7の紫外線通過窓部材の上面図である。It is a top view of the ultraviolet-ray passage window member of FIG. 図1、図5の紫外線発光装置の光損失を説明するための順電流−光出力特性グラフである。6 is a forward current-light output characteristic graph for explaining light loss in the ultraviolet light emitting device of FIGS. 1 and 5. FIG. 図2の紫外線発光装置の第1の変更例を示す断面図である。It is sectional drawing which shows the 1st modification of the ultraviolet light-emitting device of FIG. 図2の紫外線発光装置の第2の変更例を示す断面図である。It is sectional drawing which shows the 2nd modification of the ultraviolet-ray light-emitting device of FIG. 図1、図5、図7の紫外線発光装置が設けられた紫外線照射装置を示す図である。It is a figure which shows the ultraviolet irradiation device provided with the ultraviolet light-emitting device of FIG.1, FIG.5, FIG.7. 従来の紫外線発光装置を示す断面図である。It is sectional drawing which shows the conventional ultraviolet-ray light-emitting device.

図1は本発明に係る紫外線発光装置の第1の実施の形態を示す上面図、図2は図1の紫外線発光装置のII−II線断面図、図3は図1の紫外線通過窓部材の上面図、図4は図1の紫外線通過窓部材を取外した紫外線発光装置の上面図である。   1 is a top view showing a first embodiment of an ultraviolet light emitting device according to the present invention, FIG. 2 is a sectional view taken along the line II-II of the ultraviolet light emitting device of FIG. 1, and FIG. FIG. 4 is a top view of the ultraviolet light emitting device with the ultraviolet passage window member of FIG. 1 removed.

図1、図2、図3、図4において、低温同時焼成セラミック(LTCC)基板1は4層の基板1−1、1−2、1−3、1−4の積層よりなり、基板1−3、1−4によって凹部1aが形成される。   1, 2, 3, and 4, a low-temperature co-fired ceramic (LTCC) substrate 1 is formed by stacking four layers of substrates 1-1, 1-2, 1-3, 1-4. 3 and 1-4 form a recess 1a.

LTCC基板1の凹部1aの基板1−1、1−2の上下には放熱パッド2−1、2−2、2−3が設けられ、放熱パッド2−1、2−2、2−3は金属ビアによって結合される。この場合、下側の金属ビア3−1は直径0.3mmと大きく、上側の金属ビア3−2は直径0.25mmと小さくしてあり、これにより、放熱効率を高くする。金属ビア3−1、3−2はAg又はAg合金よりなり、焼結を阻害しない範囲でPt、Rh、Pd、Ru等を添加してもよい。   Heat dissipation pads 2-1, 2-2, 2-3 are provided above and below the substrates 1-1, 1-2 of the recess 1a of the LTCC substrate 1, and the heat dissipation pads 2-1, 2-2, 2-3 are Combined by metal vias. In this case, the lower metal via 3-1 is as large as 0.3 mm in diameter, and the upper metal via 3-2 is as small as 0.25 mm in diameter, thereby increasing the heat dissipation efficiency. The metal vias 3-1 and 3-2 are made of Ag or an Ag alloy, and Pt, Rh, Pd, Ru, or the like may be added as long as sintering is not inhibited.

LTCC基板1の凹部1aを囲み上部をLTCC基板1の上部を構成する基板1−3、1−4の下の基板1−1、1−2の上下には、電極パッド4−1、配線パッド4−2、4−3が設けられ、金属ビア(図示せず)によって電気的に接続される。尚、この金属ビアは金属ビア3−1、3−2と同一層よりなる。   An electrode pad 4-1 and a wiring pad are provided above and below the substrates 1-1 and 1-2 below the substrates 1-3 and 1-4 that surround the recess 1a of the LTCC substrate 1 and constitute the upper portion of the LTCC substrate 1. 4-2 and 4-3 are provided, and are electrically connected by metal vias (not shown). This metal via is made of the same layer as the metal vias 3-1, 3-2.

たとえば、深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6は波長210〜310nmの領域の深紫外線を発生するものであり、その発光層はたとえばAlGaN系で構成される。これらの深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6はAuSn共晶接合層又はバンプ(図示せず)を用いてサブマウント6に搭載される。また、サブマウント6はAlN又は酸化シリコンを有するシリコンより構成され、放熱性能がよいAuSn共晶接合層(図示せず)によって放熱パッド2−3に接合される。従って、深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6から発生した熱はサブマウント6、放熱パッド2−3、金属ビア3−2、放熱パッド2−2、金属ビア3−1及び放熱パッド2−1を介して外部へ放熱される。   For example, deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, and 5-6 generate deep ultraviolet rays in a wavelength range of 210 to 310 nm, and the light emitting layer is For example, it is composed of an AlGaN system. These deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, 5-6 are mounted on the submount 6 using AuSn eutectic bonding layers or bumps (not shown). Is done. The submount 6 is made of AlN or silicon having silicon oxide, and is bonded to the heat dissipation pad 2-3 by an AuSn eutectic bonding layer (not shown) having good heat dissipation performance. Therefore, the heat generated from the deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, 5-6 is transferred to the submount 6, the heat radiation pad 2-3, the metal via 3-2, The heat is radiated to the outside through the heat radiation pad 2-2, the metal via 3-1, and the heat radiation pad 2-1.

深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6はサブマウント6上の配線層6a、6b間に電気的に接続され、配線層6a、6bはワイヤ7a、7bによって基板1−2上のワイヤボンディングパッド8a、8bに電気的に接続される。尚、ワイヤボンディングパッド8a、8bは配線パッド4−3の一部であり、配線パッド4−2、4−1を介して2つの電極パッド4−1に電気的に接続される。従って、深紫外線LED素子5は2つの電極パッド4−1間に電気的に接続されることになる。   The deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, 5-6 are electrically connected between the wiring layers 6a, 6b on the submount 6, and the wiring layer 6a, 6b is electrically connected to wire bonding pads 8a and 8b on the substrate 1-2 by wires 7a and 7b. The wire bonding pads 8a and 8b are a part of the wiring pad 4-3 and are electrically connected to the two electrode pads 4-1 via the wiring pads 4-2 and 4-1. Therefore, the deep ultraviolet LED element 5 is electrically connected between the two electrode pads 4-1.

ツェナダイオード素子9は深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6を逆電圧から保護するためのものであり、深紫外線LED素子5に電気的に逆並列に接続される。つまり、ツェナダイオード素子9の一方の電極はLTCC基板1の凹部1aのサブマウント6が搭載されていない領域上の配線パッド4−3’上に搭載され、ツェナダイオード素子9の他方の電極はワイヤ7cによってワイヤボンディングパッド8bに電気的に接続される。   The zener diode element 9 is for protecting the deep ultraviolet LED element 5-1, 5-2, 5-3, 5-4, 5-5, 5-6 from a reverse voltage. Electrically connected in antiparallel. That is, one electrode of the Zener diode element 9 is mounted on the wiring pad 4-3 ′ on the region where the submount 6 of the recess 1a of the LTCC substrate 1 is not mounted, and the other electrode of the Zener diode element 9 is a wire. 7c is electrically connected to the wire bonding pad 8b.

尚、放熱パッド2−1、電極パッド4−1は同一層であり、放熱パッド2−2、電極パッド4−2は同一層であり、放熱パッド2−3、電極パッド4−3、4−3’、ワイヤボンディングパッド8a、8bは同一層である。   The heat dissipating pad 2-1 and the electrode pad 4-1 are the same layer, and the heat dissipating pad 2-2 and the electrode pad 4-2 are the same layer, and the heat dissipating pad 2-3, the electrode pads 4-3, 4- 3 ′, the wire bonding pads 8a and 8b are the same layer.

LTCC基板1の凹部1aを覆うようにLTCC基板1の上部つまり基板1−4上に紫外線通過窓部材10Aを設けてある。紫外線通過窓部材10Aの材料は、アルミナ(Al)、アルミナを含むガラス(SiO)等のセラミック、アルミニウム、銅等の金属、石英ガラス、サファイヤ、MgO、MgF、CaF、合成フェーズドシリカ等の紫外線透過材料である。 An ultraviolet light passage window member 10A is provided on the LTCC substrate 1, that is, on the substrate 1-4 so as to cover the concave portion 1a of the LTCC substrate 1. The material of the ultraviolet light passage window member 10A is alumina (Al 2 O 3 ), ceramics such as glass containing alumina (SiO 2 ), metals such as aluminum and copper, quartz glass, sapphire, MgO, MgF 2 , CaF 2 , synthesis It is an ultraviolet transmissive material such as phased silica.

基板1−4と深紫外線透過窓部材10Aとの間の封止部材として樹脂接着層11を設ける。樹脂接着層11の材料は、たとえば、アクリル系樹脂、エポキシ系樹脂、シリコーン系樹脂、有機/無機(たとえばシリコーン/シリカ)ハイブリッド樹脂、フッ素系樹脂等である。   A resin adhesive layer 11 is provided as a sealing member between the substrate 1-4 and the deep ultraviolet light transmitting window member 10A. The material of the resin adhesive layer 11 is, for example, an acrylic resin, an epoxy resin, a silicone resin, an organic / inorganic (for example, silicone / silica) hybrid resin, a fluorine resin, or the like.

紫外線通過窓部材10Aは、図3に示すごとく、開口10A−1、10A−2、10A−3、10A−4、10A−5、10A−6を有する。図1に示すごとく、開口10A−1は深紫外線LED素子5−1、5−2上に位置し、LED素子5−1、5−2のサイズより大きく、開口10A−2は深紫外線LED素子5−3上に位置し、LED素子5−3のサイズより大きく、開口10A−3は深紫外線LED素子5−4、5−5上に位置し、LED素子5−4、5−5のサイズより大きく、開口10A−4は深紫外線LED素子5−6上に位置し、LED素子5−6のサイズより大きい。従って、図2に示すごとく、深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6からの紫外線ULは開口10A−1、10A−2、10A−3、10A−4を介して光損失がなく出射される。尚、紫外線通過窓部材10Aが反射率の高い材料の場合には、図2に示すごとく、紫外線ULは紫外線通過窓部材10Aの開口10A−1、10A−2、10A−3、10A−4側の壁面においても反射して出射される。従って、光損失はほとんどない。また、紫外線通過窓部材10Aの枠構造により深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6の汚染を防止する。   As shown in FIG. 3, the ultraviolet light passing window member 10 </ b> A has openings 10 </ b> A- 1, 10 </ b> A- 2, 10 </ b> A- 3, 10 </ b> A- 4, 10 </ b> A- 5, 10 </ b> A- 6. As shown in FIG. 1, the opening 10A-1 is located on the deep ultraviolet LED elements 5-1, 5-2 and is larger than the size of the LED elements 5-1, 5-2, and the opening 10A-2 is a deep ultraviolet LED element. 5-3, larger than the size of the LED element 5-3, the opening 10A-3 is located on the deep ultraviolet LED elements 5-4, 5-5, and the size of the LED elements 5-4, 5-5 The opening 10A-4 is located on the deep ultraviolet LED element 5-6 and is larger than the size of the LED element 5-6. Therefore, as shown in FIG. 2, the ultraviolet rays UL from the deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, 5-6 are emitted from the openings 10A-1, 10A-2, 10A. -3, 10A-4 through the light without loss. In the case where the ultraviolet ray passing window member 10A is made of a material having a high reflectance, as shown in FIG. 2, the ultraviolet ray UL is on the openings 10A-1, 10A-2, 10A-3, 10A-4 side of the ultraviolet ray passing window member 10A. The light is also reflected and emitted from the wall surface. Therefore, there is almost no optical loss. Further, the deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, and 5-6 are prevented from being contaminated by the frame structure of the ultraviolet light passing window member 10A.

他方、図1に示すように、開口10A−5、10A−6はワイヤ7a、7b、7cの一部の上に位置し、従って、紫外線通過窓部材10Aの枠構造がワイヤ7a、7b、7cの一部を覆っており、これにより、ワイヤ7a、7b、7cを手等からの接触から保護する。   On the other hand, as shown in FIG. 1, the openings 10A-5, 10A-6 are located on a part of the wires 7a, 7b, 7c, and therefore the frame structure of the ultraviolet light passing window member 10A is the wires 7a, 7b, 7c. As a result, the wires 7a, 7b, and 7c are protected from contact with a hand or the like.

図5は本発明に係る紫外線発光装置の第2の実施の形態を示す上面図、図6は図5の紫外線通過窓部材の上面図である。   FIG. 5 is a top view showing a second embodiment of the ultraviolet light emitting device according to the present invention, and FIG. 6 is a top view of the ultraviolet passage window member of FIG.

図5、図6においては、図1、図3の紫外線通過窓部材10Aの代りに、紫外線通過窓部材10Bを設けてある。つまり、紫外線通過窓部材10Bにおいて、紫外線通過窓部材10Aの開口10A−5、10A−6を設けていない。従って、紫外線通過窓部材10Bの枠構造がワイヤ7a、7b、7cのほぼ全部を覆っており、この結果、ワイヤ7a、7b、7cの保護がより完全となる。尚、光損失は図1、図3の紫外線通過窓部材10Aの場合と変わらない。   5 and 6, an ultraviolet light passing window member 10B is provided in place of the ultraviolet light passing window member 10A shown in FIGS. That is, the ultraviolet passage window member 10B is not provided with the openings 10A-5 and 10A-6 of the ultraviolet passage window member 10A. Therefore, the frame structure of the ultraviolet ray passing window member 10B covers almost all of the wires 7a, 7b, 7c, and as a result, the protection of the wires 7a, 7b, 7c becomes more complete. The light loss is not different from the case of the ultraviolet ray passing window member 10A shown in FIGS.

図7は本発明に係る紫外線発光装置の第3の実施の形態を示す上面図、図8は図7の紫外線通過窓部材の上面図である。   FIG. 7 is a top view showing a third embodiment of the ultraviolet light emitting device according to the present invention, and FIG. 8 is a top view of the ultraviolet passage window member of FIG.

図7、図8においては、図5、図6の紫外線通過窓部材10Bの代りに、紫外線通過窓部材10Cを設けてある。つまり、紫外線通過窓部材10Cにおいて、開口10C−1、10C−2は図5、図6の開口10A−1、10A−2、10A−3、10A−4に相当し、開口10A−1、10A−2との間の枠構造及び開口10A−3、10A−4との間の枠構造が存在しない。この分だけ開口10C−1、10C−2を介して出射される紫外線ULの光量は増加する。従って、光損失は図5、図6の紫外線通過窓部材10Bの場合に比較して減少する。尚、紫外線通過窓部材10Cの枠構造は図5、図6の紫外線通過窓部材10Bと同様に、ワイヤ7a、7b、7cのほぼ全部を覆っており、この結果、ワイヤ7a、7b、7cの保護は変わらない。   7 and 8, an ultraviolet light passing window member 10C is provided in place of the ultraviolet light passing window member 10B shown in FIGS. That is, in the ultraviolet ray passing window member 10C, the openings 10C-1 and 10C-2 correspond to the openings 10A-1, 10A-2, 10A-3, and 10A-4 in FIGS. 5 and 6, and the openings 10A-1, 10A. -2 and the frame structure between the openings 10A-3 and 10A-4 do not exist. The amount of the ultraviolet light UL emitted through the openings 10C-1 and 10C-2 increases by this amount. Therefore, the optical loss is reduced as compared with the case of the ultraviolet ray passing window member 10B shown in FIGS. The frame structure of the ultraviolet light passing window member 10C covers almost all of the wires 7a, 7b, and 7c similarly to the ultraviolet light passing window member 10B of FIGS. 5 and 6, and as a result, the wires 7a, 7b, and 7c Protection does not change.

図9は図1、図5の紫外線発光装置の光損失を説明するための順電流−光出力特性グラフである。   FIG. 9 is a forward current-light output characteristic graph for explaining the light loss of the ultraviolet light emitting device of FIGS.

図9は、発光波長280nmの深紫外線LED素子5−1、5−2、5−3、5−4、5−5、5−6に順電流240mAを流した場合の光出力特性を示す。窓部材が存在しない場合(比較例)の光出力29.3mWを基準とすると、従来の図13の紫外線発光装置において、光出力25.7mWで光損失は約12%であったのに対し、本発明の図1、図5の紫外線発光装置においては、光出力28.4mWで光損失は約3%であった。本発明の図7の紫外線発光装置の光損失も同等の約3%もしくはこれ以下である。このように、本発明によれば、光損失を少なくできた。   FIG. 9 shows light output characteristics when a forward current of 240 mA is passed through the deep ultraviolet LED elements 5-1, 5-2, 5-3, 5-4, 5-5, and 5-6 having an emission wavelength of 280 nm. Based on the light output of 29.3 mW when the window member is not present (comparative example), in the conventional ultraviolet light emitting device of FIG. 13, the light output was about 12% at the light output of 25.7 mW. In the ultraviolet light emitting device of FIGS. 1 and 5 of the present invention, the optical loss was about 3% at an optical output of 28.4 mW. The light loss of the ultraviolet light emitting device of FIG. 7 of the present invention is equivalent to about 3% or less. Thus, according to the present invention, optical loss can be reduced.

図10は図2の紫外線発光装置の第1の変更例を示す。すなわち、紫外線通過窓部材10Aの枠の下側(LED素子側)の幅を上側(LED素子の反対側)の幅より小さくすることにより、光取り出し効率を向上させることができる。図5、図7の紫外線発光装置の場合も同様である。   FIG. 10 shows a first modification of the ultraviolet light emitting device of FIG. That is, the light extraction efficiency can be improved by making the width of the lower side (LED element side) of the ultraviolet light passage window member 10A smaller than the width of the upper side (opposite side of the LED element). The same applies to the ultraviolet light emitting devices of FIGS.

図11は図2の紫外線発光装置の第2の変更例を示す。すなわち、紫外線通過窓部材10Aの枠の深紫外線LED素子の発光波長での反射率が小さい場合、枠の側面にアルミニウム等の反射層12を設けることにより、光吸収を減少させて光取り出し効率を向上させることができる。図5、図7、図10の紫外線発光装置の場合も同様である。尚、反射層12は下から又は上からのスパッタリング法によって形成できる。   FIG. 11 shows a second modification of the ultraviolet light emitting device of FIG. That is, when the reflectance at the emission wavelength of the deep ultraviolet LED element of the frame of the ultraviolet light passing window member 10A is small, by providing the reflective layer 12 such as aluminum on the side surface of the frame, the light absorption is reduced and the light extraction efficiency is improved. Can be improved. The same applies to the ultraviolet light-emitting devices of FIGS. 5, 7, and 10. The reflective layer 12 can be formed by sputtering from below or from above.

図12は図1、図5、図7、図10、図11の紫外線発光装置(20とする)が適用された紫外線照射装置を示す図である。   FIG. 12 is a view showing an ultraviolet irradiation device to which the ultraviolet light emitting device (referred to as 20) of FIGS. 1, 5, 7, 10, and 11 is applied.

図12の(A)に示すごとく、紫外線発光装置20を紫外線照射装置の処理ガス、処理水等の殺菌対象物を矢印のごとく流す紫外線透過ケーシング21の外側に配置すると共に、紫外線発光装置20に対向して反射板22を配置すると、紫外線発光装置20から発生した紫外線ULは反射板22にて反射されて紫外線が再び紫外線発光装置20に入射する。また、図12の(B)、(C)に示すごとく、2つの紫外線発光装置20を紫外線透過ケーシング21に対向して配置すると、紫外線ULは一方の紫外線発光装置20から発生し、他方の紫外線発光装置20からも入射する。   As shown in FIG. 12 (A), the ultraviolet light emitting device 20 is disposed outside the ultraviolet transmissive casing 21 through which the sterilization object such as the processing gas and treated water of the ultraviolet irradiation device flows as indicated by the arrows, and the ultraviolet light emitting device 20 is provided. When the reflecting plate 22 is disposed so as to oppose, the ultraviolet light UL generated from the ultraviolet light emitting device 20 is reflected by the reflecting plate 22 and the ultraviolet light is incident on the ultraviolet light emitting device 20 again. Further, as shown in FIGS. 12B and 12C, when the two ultraviolet light emitting devices 20 are arranged facing the ultraviolet transmitting casing 21, the ultraviolet light UL is generated from one ultraviolet light emitting device 20, and the other ultraviolet light is emitted. It also enters from the light emitting device 20.

このように、本発明に係る紫外線発光装置特に深紫外線発光装置は、深紫外線によって処理ガス、処理水の殺菌を行うことができる。   As described above, the ultraviolet light emitting device according to the present invention, particularly the deep ultraviolet light emitting device, can sterilize the processing gas and the processing water with deep ultraviolet light.

尚、上述の実施の形態においては、210〜310nmの短波長領域の深紫外線発光装置に係るが、本発明は310nm以上の長波長領域の紫外線LED素子にも適用できる。   In the above-described embodiment, the deep ultraviolet light emitting device has a short wavelength region of 210 to 310 nm, but the present invention can also be applied to an ultraviolet LED element having a long wavelength region of 310 nm or more.

上述の実施の形態においては、基板材料としてLTCC基板1を用いているが、高温同時焼成セラミック(HTCC)基板やAlN基板を用いることもできる。また、HTCC基板やAlN基板の場合には、金属ビア材料としてW、Mo、Cu及びそれらの合金を用いることができる。さらに、AlNの場合には、熱伝導率が大きいので、金属ビアを用いなくてもよい。   In the above-described embodiment, the LTCC substrate 1 is used as the substrate material, but a high-temperature co-fired ceramic (HTCC) substrate or an AlN substrate can also be used. In the case of an HTCC substrate or an AlN substrate, W, Mo, Cu, and alloys thereof can be used as the metal via material. Furthermore, in the case of AlN, since the thermal conductivity is large, it is not necessary to use a metal via.

また、本発明は上述の実施の形態の自明の範囲のいかなる変更にも適用できる。   Further, the present invention can be applied to any change in the obvious range of the above-described embodiment.

本発明の紫外線発光装置、特に、深紫外線発光装置は、殺菌効果が大きいので、浄水器、ウォータクーラ、ウォータサーバ、医療用純水、加湿器、食器洗浄機、デンタルチェア等における水の殺菌浄化装置に利用できる。   Since the ultraviolet light emitting device of the present invention, in particular, the deep ultraviolet light emitting device has a large sterilizing effect, sterilization and purification of water in water purifiers, water coolers, water servers, medical pure water, humidifiers, dishwashers, dental chairs, etc. Available for equipment.

1:LTCC基板
1−1、1−2、1−3、1−4:基板
1a:凹部
2−1、2−2、2−3:放熱パッド
3−1、3−2:金属ビア
4−1:電極パッド
4−2、4−3:配線パッド
5:深紫外線LED素子
6:サブマウント
6a、6b:配線層
7a、7b:ワイヤ
8a、8b:ワイヤボンディングパッド
9:ツェナダイオード
10A、10B、10C:紫外線通過窓部材
11:樹脂接着層
12:反射層
20:紫外線発光装置
21:ケーシング
22:反射板
1: LTCC substrate 1-1, 1-2, 1-3, 1-4: Substrate 1a: Recesses 2-1, 2-2, 2-3: Heat radiation pad 3-1, 3-2: Metal via 4- 1: Electrode pads 4-2, 4-3: Wiring pad 5: Deep ultraviolet LED element 6: Submount 6a, 6b: Wiring layer 7a, 7b: Wire 8a, 8b: Wire bonding pad 9: Zener diodes 10A, 10B, 10C: UV passage window member 11: Resin adhesive layer 12: Reflective layer 20: Ultraviolet light emitting device 21: Casing 22: Reflector

Claims (6)

凹部が形成され、該凹部を囲む上部を有する基板と、
前記基板の凹部内に設けられた紫外線発光素子と、
前記基板の凹部を覆うように前記基板の上部に設けられた紫外線通過窓部材と、
を具備し、紫外線通過窓部材は紫外線発光素子上に開口を有する紫外線発光装置。
A substrate having a recess formed therein and having an upper portion surrounding the recess;
An ultraviolet light emitting element provided in the recess of the substrate;
An ultraviolet ray passing window member provided on the upper part of the substrate so as to cover the recess of the substrate;
An ultraviolet light emitting device having an aperture on the ultraviolet light emitting element.
前記開口は前記紫外線発光素子のサイズより大きい請求項1に記載の紫外線発光装置。   The ultraviolet light emitting device according to claim 1, wherein the opening is larger than a size of the ultraviolet light emitting element. さらに、前記基板と前記紫外線発光素子とを電気的に接続するワイヤを具備し、
前記紫外線通過窓部材の枠構造は前記ワイヤの少なくとも一部上に存在する請求項1に記載の紫外線発光装置。
Furthermore, comprising a wire for electrically connecting the substrate and the ultraviolet light emitting element,
The ultraviolet light emitting device according to claim 1, wherein a frame structure of the ultraviolet ray passing window member exists on at least a part of the wire.
前記紫外線通過窓部材の前記紫外線発光素子側の幅は前記紫外線通過窓部材の前記紫外線発光素子と反対側の幅より小さい請求項1に記載の紫外線発光装置。   2. The ultraviolet light emitting device according to claim 1, wherein a width of the ultraviolet light passing window member on the ultraviolet light emitting element side is smaller than a width of the ultraviolet light passing window member on the opposite side to the ultraviolet light emitting element. 前記紫外線通過窓部材の前記開口側の側面に設けられた反射部材を具備する請求項1に記載の紫外線発光装置。   The ultraviolet light-emitting device according to claim 1, further comprising a reflective member provided on a side surface of the ultraviolet light passage window member on the opening side. 処理ガス又は処理水を流すためのケーシングと、
前記ケーシングの外面に設けられた請求項1〜5のいずれかに記載の紫外線発光装置の少なくとも1つと
を具備する紫外線照射装置。
A casing for flowing treatment gas or treatment water;
An ultraviolet irradiation device comprising: at least one of the ultraviolet light emitting devices according to claim 1 provided on an outer surface of the casing.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021044337A (en) * 2019-09-10 2021-03-18 パナソニック株式会社 Semiconductor laser device

Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742833U (en) * 1980-08-21 1982-03-09
JPH0461538U (en) * 1990-10-05 1992-05-27
JPH08280779A (en) * 1995-04-19 1996-10-29 Yoshihisa Ishikawa Method for sterilizing floor surface or the like and device therefor
JP2000349348A (en) * 1999-03-31 2000-12-15 Toyoda Gosei Co Ltd Short wavelength led lamp unit
JP2001196635A (en) * 2000-01-13 2001-07-19 Sharp Corp Light emitting diode unit
JP2005276895A (en) * 2004-03-23 2005-10-06 Kyocera Corp Package for storing light emitting element, light emitting apparatus and lighting apparatus
JP2006110235A (en) * 2004-10-18 2006-04-27 Masaaki Suzuki Home sanitization treatment apparatus
KR20080100048A (en) * 2007-05-11 2008-11-14 서울반도체 주식회사 Fluid cleaner having ultra violet light emitting diode
JP2009177098A (en) * 2008-01-28 2009-08-06 Panasonic Electric Works Co Ltd Ultraviolet light emitting device
JP2010056192A (en) * 2008-08-27 2010-03-11 Kyocera Corp Surface-emitting irradiation device, surface-emitting irradiation equipment, and droplet discharge equipment
JP2011016074A (en) * 2009-07-09 2011-01-27 U-Vix Corp Ultraviolet water sterilization and purification device and ultraviolet led unit used for the same
JP2012023110A (en) * 2010-07-12 2012-02-02 Vienex Corp Ultraviolet light source and optical reader using the same
JP2012054492A (en) * 2010-09-03 2012-03-15 Nk Works Kk Semiconductor ultraviolet light-emitting element
JP2012191042A (en) * 2011-03-11 2012-10-04 Stanley Electric Co Ltd Light-emitting device
JP2012227511A (en) * 2011-04-20 2012-11-15 Lg Innotek Co Ltd Ultraviolet light emitting element package
JP2012244170A (en) * 2011-05-13 2012-12-10 Lg Innotek Co Ltd Light emitting element package and ultraviolet lamp including the same
KR20130063421A (en) * 2011-12-06 2013-06-14 엘지이노텍 주식회사 Light emitting device package
JP2014036226A (en) * 2012-08-09 2014-02-24 Lg Innotek Co Ltd Light-emitting package
JP2014180655A (en) * 2013-03-21 2014-09-29 Price Management Of Japan Co Ltd Irradiation device
JP2014233646A (en) * 2013-05-30 2014-12-15 日機装株式会社 Water purifier

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742833U (en) * 1980-08-21 1982-03-09
JPH0461538U (en) * 1990-10-05 1992-05-27
JPH08280779A (en) * 1995-04-19 1996-10-29 Yoshihisa Ishikawa Method for sterilizing floor surface or the like and device therefor
JP2000349348A (en) * 1999-03-31 2000-12-15 Toyoda Gosei Co Ltd Short wavelength led lamp unit
JP2001196635A (en) * 2000-01-13 2001-07-19 Sharp Corp Light emitting diode unit
JP2005276895A (en) * 2004-03-23 2005-10-06 Kyocera Corp Package for storing light emitting element, light emitting apparatus and lighting apparatus
JP2006110235A (en) * 2004-10-18 2006-04-27 Masaaki Suzuki Home sanitization treatment apparatus
KR20080100048A (en) * 2007-05-11 2008-11-14 서울반도체 주식회사 Fluid cleaner having ultra violet light emitting diode
JP2009177098A (en) * 2008-01-28 2009-08-06 Panasonic Electric Works Co Ltd Ultraviolet light emitting device
JP2010056192A (en) * 2008-08-27 2010-03-11 Kyocera Corp Surface-emitting irradiation device, surface-emitting irradiation equipment, and droplet discharge equipment
JP2011016074A (en) * 2009-07-09 2011-01-27 U-Vix Corp Ultraviolet water sterilization and purification device and ultraviolet led unit used for the same
JP2012023110A (en) * 2010-07-12 2012-02-02 Vienex Corp Ultraviolet light source and optical reader using the same
JP2012054492A (en) * 2010-09-03 2012-03-15 Nk Works Kk Semiconductor ultraviolet light-emitting element
JP2012191042A (en) * 2011-03-11 2012-10-04 Stanley Electric Co Ltd Light-emitting device
JP2012227511A (en) * 2011-04-20 2012-11-15 Lg Innotek Co Ltd Ultraviolet light emitting element package
JP2012244170A (en) * 2011-05-13 2012-12-10 Lg Innotek Co Ltd Light emitting element package and ultraviolet lamp including the same
KR20130063421A (en) * 2011-12-06 2013-06-14 엘지이노텍 주식회사 Light emitting device package
JP2014036226A (en) * 2012-08-09 2014-02-24 Lg Innotek Co Ltd Light-emitting package
JP2014180655A (en) * 2013-03-21 2014-09-29 Price Management Of Japan Co Ltd Irradiation device
JP2014233646A (en) * 2013-05-30 2014-12-15 日機装株式会社 Water purifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021044337A (en) * 2019-09-10 2021-03-18 パナソニック株式会社 Semiconductor laser device
JP7269140B2 (en) 2019-09-10 2023-05-08 パナソニックホールディングス株式会社 Semiconductor laser device

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