JP7269140B2 - Semiconductor laser device - Google Patents

Description

The present disclosure relates to semiconductor laser devices.

2. Description of the Related Art Conventionally, there is a semiconductor laser device including a semiconductor laser element that emits a laser beam and an optical member such as a lens that controls the light distribution of the laser beam (see, for example, Patent Document 1).

A semiconductor laser device disclosed in Patent Document 1 includes a semiconductor laser array that emits laser light, a condenser lens, and a lens holder such as a heat sink. The condensing lens and the lens holder are adhered with an ultraviolet curable adhesive.

Japanese Patent Application Laid-Open No. 2002-232064 JP-A-2000-137139

In recent years, semiconductor laser devices emit laser light with wavelengths ranging from blue light to near-ultraviolet light. A resin used for an ultraviolet curable adhesive or the like deteriorates by being discolored or embrittled when irradiated with a laser beam, particularly a laser beam with a wavelength from blue light to near-ultraviolet light.

The present disclosure provides a semiconductor laser device capable of suppressing deterioration of adhesive.

A semiconductor laser device according to an aspect of the present disclosure includes: a semiconductor laser element; a base on which the semiconductor laser element is arranged; an optical member through which laser light emitted from the semiconductor laser element is transmitted; and an adhesive agent that is a resin for bonding the metal member and the base.

According to the semiconductor laser device according to one aspect of the present disclosure, deterioration of the adhesive can be suppressed.

FIG. 1 is a perspective view showing a semiconductor laser device according to Embodiment 1. FIG. FIG. 2 is an exploded perspective view showing the semiconductor laser device according to Embodiment 1. FIG. FIG. 3 is a cross-sectional view showing the semiconductor laser device according to Embodiment 1, taken along line III-III in FIG. FIG. 4 is a diagram for explaining the method of manufacturing the semiconductor laser device according to the first embodiment. FIG. 5 is a cross-sectional view showing a semiconductor laser device according to a modification of Embodiment 1. FIG. FIG. 6 is a perspective view of the semiconductor laser device according to Embodiment 2 as viewed from the light emitting side. FIG. 7 is a perspective view of the semiconductor laser device according to the second embodiment as seen from the side opposite to the light emitting side. FIG. 8 is an exploded perspective view showing a laser module according to Embodiment 2. FIG. FIG. 9 is a perspective view showing an optical holder according to Embodiment 2. FIG. FIG. 10 is a perspective view of a semiconductor laser device according to a modification of the second embodiment, viewed from the side. FIG. 11 is a perspective view showing the semiconductor laser device according to the modification of the second embodiment as viewed from another side.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. It should be noted that each of the embodiments described below is a specific example of the present disclosure. Numerical values, shapes, materials, components, arrangement positions and connection forms of components, steps, order of steps, and the like shown in the following embodiments are examples, and are not intended to limit the present disclosure. The disclosure is limited only by the claims.

Each figure is a schematic diagram and is not necessarily strictly illustrated. Therefore, for example, the scales and the like do not necessarily match in each drawing. Also, in each figure, substantially the same configuration is denoted by the same reference numeral, and redundant description of the substantially same configuration may be omitted or simplified.

Also, in the following embodiments, the terms "above" and "below" do not refer to the upward direction (vertically upward) and the downward direction (vertically downward) in absolute spatial recognition. Also, the terms "above" and "below" are used not only when two components are spaced apart from each other and there is another component between the two components, but also when two components are spaced apart from each other. It also applies when two components are in contact with each other and are placed in close contact with each other.

In addition, in this specification and drawings, the X-axis, Y-axis and Z-axis indicate three axes of a three-dimensional orthogonal coordinate system. In each embodiment, the Z-axis direction is the vertical direction, and the direction perpendicular to the Z-axis (the direction parallel to the XY plane) is the horizontal direction. Also, in the embodiments described below, the positive direction of the Z-axis may be described as upward, and the negative direction of the Z-axis may be described as downward. Further, in the embodiments described below, the semiconductor laser element is described as emitting laser light in the positive direction of the Y-axis. In the embodiments described below, the positive side of the Y axis may be referred to as the light emitting side.

Further, in the embodiments described below, "top view" means a view from the direction normal to the surface on which the semiconductor laser element is mounted.

(Embodiment 1)
[composition]
FIG. 1 is a schematic perspective view showing a semiconductor laser device 100 according to Embodiment 1. FIG. FIG. 2 is an exploded perspective view showing the semiconductor laser device 100 according to Embodiment 1. FIG.

A semiconductor laser device 100 is a laser device that emits laser light. The semiconductor laser device 100 is used, for example, as a light source for processing equipment that laser-processes an object.

The semiconductor laser device 100 includes a semiconductor laser element 110 , a base 120 , an optical member 130 , a metal member 140 , an adhesive 150 , a first light shielding member 160 and a second light shielding member 170 .

The semiconductor laser element 110 is a light source that emits laser light. Note that the wavelength of the laser light emitted from the semiconductor laser element 110 may be set arbitrarily. In the present embodiment, semiconductor laser element 110 emits laser light with a wavelength ranging from blue light to near-ultraviolet light with a center wavelength of 450 nm or less.

In this embodiment, semiconductor laser element 110 has one light emitting point 111 and emits laser light from light emitting point 111 . The semiconductor laser element 110 may be a semiconductor laser array element having multiple light emitting points 111 .

Note that the material used for the semiconductor laser element 110 is not particularly limited. The semiconductor laser element 110 is, for example, a gallium nitride-based semiconductor element.

The base 120 is a table on which the semiconductor laser element 110 is arranged. Also, the optical member 130 is adhered to the base 120 with an adhesive 150 .

The base 120 includes an upper base 121 and a lower base 122 . The semiconductor laser element 110 is placed on a lower base 122 . In addition, the portion of the lower base 122 on which the semiconductor laser element 110 is mounted is lower than the other portions. Semiconductor laser element 110 is supported by base 120 so as to be sandwiched between upper base 121 and lower base 122 .

The semiconductor laser element 110 and the upper base 121 may or may not be in contact with each other.

Also, the materials used for the upper base 121 and the lower base 122 are not particularly limited. The material used for the upper base 121 and the lower base 122 may be, for example, a metal material, a resin material, or a ceramic material.

Also, the shapes of the upper base 121 and the lower base 122 are not particularly limited. In the present embodiment, the upper base 121 and the lower base 122 are each rectangular in top view.

The upper base 121 and the lower base 122 are fixed to each other by, for example, screws (not shown).

The optical member 130 is an optical system through which the laser light emitted by the semiconductor laser element 110 is transmitted. The optical member 130 is, for example, a member that controls the light distribution of laser light emitted by the semiconductor laser element 110 . In the present embodiment, the optical member 130 includes a collimator lens (more specifically, a Fast Axis Collimator Lens (FAC)) for collimating a laser beam (more specifically, in the fast axis direction of the laser beam); It is a BTU (Beam Twisted Lens Unit) having a 90° image rotating optical system (BT/Beam Twister) that rotates a laser beam collimated by a collimator lens by 90° around the optical axis of the laser beam. For example, the BTU is exemplified by an optical beam converter disclosed in Japanese Patent Application Laid-Open No. 2000-137139. For example, the collimator lens is arranged closer to the semiconductor laser element 110 than the 90° image rotating optical system. The laser light emitted from the semiconductor laser element 110 is collimated in the fast axis direction by a collimator lens, and rotated 90° around the optical axis of the laser light by a 90° image rotating optical system. For example, the collimator lens and the 90° image rotating optical system are integrally formed of glass, resin, or the like.

In this embodiment, the semiconductor laser device 100 includes one BTU as the optical member 130, but the shape, number, etc. of the optical member 130 included in the semiconductor laser device 100 are not particularly limited.

The metal member 140 is a metal member arranged to be adhered to the optical member 130 . The metal member 140 is arranged in contact with the optical member 130 by forming a metal film on the surface of the optical member 130 using, for example, a sputtering method.

A material employed for the metal member 140 is not particularly limited as long as it is a metal. For the metal member 140, for example, a metal material having light reflectivity that reflects laser light may be employed. Examples of metal materials include silver and aluminum.

The adhesive 150 is an adhesive that bonds the metal member 140 and the base 120 together. More specifically, the adhesive 150 bonds the optical member 130 and the base 120 via the metal member 140 . In this embodiment, it is arranged on each of the two metal members 140 respectively arranged on both ends of the optical member 130 . The adhesive 150 adheres the optical member 130 to the base 120 via the metal member 140 .

The two adhesives 150 are arranged symmetrically with respect to the optical member 130 . In the present embodiment, the two adhesives 150, when viewed from the top (that is, when the adhesive 150 is seen from the normal direction of the surface of the base 120 on which the semiconductor laser element 110 is mounted), are the semiconductor lasers. They are arranged at symmetrical positions with respect to the optical axis of the laser light emitted by the element 110 . Also, the two adhesives 150 are applied, for example, at symmetrical positions with respect to the optical member 130 and in the same amount.

The adhesive 150 is, for example, resin. The adhesive 150 may be, for example, a thermosetting resin, a thermoplastic resin, or an ultraviolet curable resin. In this embodiment, the adhesive 150 employs an ultraviolet curable resin.

The first light shielding member 160 is a member having a light shielding property for shielding laser light. For example, the first light shielding member 160 is positioned between the optical member 130 and the semiconductor laser element 110, and between the light emitting point 111 from which the laser light is emitted from the semiconductor laser element 110 and the adhesive 150. .

FIG. 3 is a cross-sectional view showing the semiconductor laser device 100 according to the first embodiment taken along line III-III in FIG.

In this way, the first light shielding member 160 is arranged between the semiconductor laser element 110 and the adhesive 150 so that the laser light emitted from the semiconductor laser element 110 does not irradiate the adhesive 150 .

The first light shielding member 160 only needs to have a light shielding property, and may be a light absorbing material that absorbs laser light or a light reflecting material that reflects laser light. In this embodiment, the first light shielding member 160 is a black member that absorbs laser light.

Further, the first light shielding member 160 may be formed by solidifying a liquid resin, or may be a member made of elastic resin such as a cushion or rubber. For example, the first light shielding member 160 has a smaller elastic modulus than the adhesive 150 . When the elastic modulus of the first light shielding member 160 and the adhesive 150 are compared, the elastic modulus of the adhesive 150 is the elastic modulus in the solidified state. The first light shielding member 160 has, for example, a higher elastic modulus than the adhesive 150 in a liquid state and a lower elastic modulus than the adhesive 150 in a solidified state.

The first light shielding member 160 is arranged, for example, in contact with each of the optical member 130 and the base 120 . Here, the optical member 130 needs to be adhered to the base 120 with high positional accuracy in order to appropriately control the light distribution of the laser beam. When the optical member 130 is adhered to the base 120 with the adhesive 150, since the position of the optical member 130 is not fixed, it may be displaced from the desired position while the adhesive 150 is being solidified. be. Furthermore, the position of the optical member 130 with respect to the base 120 cannot be changed after the adhesive 150 has hardened. Therefore, a member having an elastic modulus smaller than that of the adhesive 150, that is, a member having elasticity is adopted as the first light shielding member 160 . Accordingly, by supporting the optical member 130 while pressing it against the first light shielding member 160 while the adhesive 150 is being solidified, it is possible to suppress the displacement of the optical member 130 from the desired position.

In addition, in the present embodiment, the first light shielding member 160 is provided in the Z-axis direction at a false amount, but the present invention is not limited to this. For example, when viewed from the front (in this embodiment, when the semiconductor laser device 100 is viewed from the positive direction of the Y axis), the first light shielding member 160 may be formed in a ring shape or in a U shape. may be formed.

The second light shielding member 170 is a member having a light shielding property for shielding laser light. The second light shielding member 170 is arranged so as to cover the adhesive 150 . Thus, the adhesive 150 is surrounded by the metal member 140 , the first light shielding member 160 and the second light shielding member 170 .

For the second light shielding member 170, for example, a light reflecting material that reflects laser light may be used. The second light shielding member 170 is, for example, a metal member such as silver or aluminum. The second light shielding member 170 may be, for example, a resin in which particles made of such a metal member are dispersed. The second light blocking member 170 is arranged to cover the adhesive 150 by being applied to the surface of the adhesive 150 and then solidified.

[Production method]
Next, a method for manufacturing the semiconductor laser device 100 will be described.

FIG. 4 is a diagram for explaining the method of manufacturing the semiconductor laser device 100 according to the first embodiment.

First, the semiconductor laser element 110 is placed on the lower base 122 and sandwiched between the upper base 121 and the lower base 122 to place the semiconductor laser element 110 on the base.

Next, as shown in (a) of FIG. 4 , after adjusting the position of the optical member 130 on which the metal member 140 is arranged, the base 120 and the optical member 130 are bonded with the adhesive 150 .

Next, as shown in FIG. 4B, the liquid first light shielding member 160 is poured between the base 120 and the optical member 130 and solidified.

Next, as shown in (c) of FIG. 4 , the second light shielding member 170 is applied to the surface of the adhesive 150 .

Thus, the semiconductor laser device 100 is manufactured.

For example, when the first light shielding member 160 is an elastic solid member such as rubber, the first light shielding member 160 is attached to the optical member 130, and the position of the optical member 130 on which the metal member 140 is arranged is adjusted. , the base 120 and the optical member 130 are adhered with the adhesive 150 .

[Effects, etc.]
As described above, the semiconductor laser device 100 according to the first embodiment includes the semiconductor laser element 110, the base 120 on which the semiconductor laser element 110 is arranged, and the optical system through which the laser light emitted from the semiconductor laser element 110 passes. It includes a member 130 , a metal member 140 arranged to adhere to the optical member 130 , and an adhesive 150 that is a resin that bonds the metal member 140 and the base 120 together.

According to this, the metal member 140 can suppress the irradiation of the adhesive 150 with the laser light passing through the optical member 130 . Therefore, according to the semiconductor laser device 100, deterioration of the adhesive 150 that bonds the optical member 130 to the base 120 can be suppressed.

Further, for example, the semiconductor laser device 100 is further positioned between the optical member 130 and the semiconductor laser element 110, and between the light emitting point 111 from which the laser light is emitted from the semiconductor laser element 110 and the adhesive 150. is provided with a first light shielding member 160 located at .

According to this, the first light shielding member 160 can prevent the laser light emitted from the semiconductor laser element 110 from directly irradiating the adhesive 150 . Therefore, according to this configuration, deterioration of the adhesive 150 that bonds the optical member 130 to the base 120 can be further suppressed.

Also, for example, the first light shielding member 160 has a smaller elastic modulus than the adhesive 150 .

Accordingly, by supporting the optical member 130 while pressing it against the first light shielding member 160 while the adhesive 150 is solidifying, it is possible to suppress the displacement of the optical member 130 from the desired position.

Also, for example, the semiconductor laser device 100 further includes a second light shielding member 170 that covers the adhesive 150 .

According to this, it is possible to suppress the irradiation of the adhesive 150 with external light and laser light reflected by reflectors or the like located around the semiconductor laser device 100 . According to this configuration, deterioration of the adhesive 150 that bonds the optical member 130 to the base 120 can be further suppressed.

(Modification of Embodiment 1)
Next, a semiconductor laser device according to a modification of Embodiment 1 will be described.

Note that in the description of the semiconductor laser device according to the modification of the first embodiment, the components that are substantially the same as those of the semiconductor laser device 100 according to the first embodiment are denoted by the same reference numerals, and the description is partly omitted. May be simplified or omitted.

FIG. 5 is a cross-sectional view showing a semiconductor laser device 100a according to a modification of the first embodiment. 5 is a sectional view showing a section corresponding to FIG.

The semiconductor laser device 100a includes a semiconductor laser element 110, a base 120, an optical member 130a, a metal member 140a, and an adhesive 150a.

The optical member 130a is an optical system through which the laser light emitted by the semiconductor laser element 110 is transmitted. The optical member 130a is, for example, a member that controls the light distribution of the laser light emitted by the semiconductor laser element 110. As shown in FIG. In the present embodiment, the optical member 130a includes a collimator lens that collimates a laser beam (more specifically, in the fast axis direction of the laser beam), and a laser beam that is collimated by the collimator lens along the optical axis of the laser beam. A BTU with 90° image rotation optics to rotate 90° around.

The optical member 130a has a concave portion 134 on the surface facing the semiconductor laser element 110 (the facing surface 133). In the present embodiment, the concave portion 134 is a notch formed also at both ends of the optical member 130 on the facing surface 133 side when viewed from above. The metal member 140 a and the adhesive 150 a are placed in the recess 134 .

The adhesive 150a is an adhesive that bonds the optical member 130a and the base 120 via the metal member 140a. In the present embodiment, it is arranged by adhering to each of two metal members 140a respectively arranged in the concave portions 134 formed at both ends of the optical member 130a. The adhesive 150a adheres the optical member 130a to the base 120 via the metal member 140a.

The two adhesives 150a are arranged symmetrically with respect to the optical member 130a. In the present embodiment, the two adhesives 150a are arranged at symmetrical positions with respect to the optical axis of the laser light emitted from the semiconductor laser element 110 when viewed from above.

A material employed for the adhesive 150a is not particularly limited. The adhesive 150a may be, for example, a thermosetting resin, a thermoplastic resin, or an ultraviolet curable resin. In this embodiment, an ultraviolet curable resin is used for the adhesive 150a.

In order to make the adhesive 150a less likely to be irradiated with laser light, it is necessary to make it less likely that reflected light from objects positioned around the semiconductor laser device 100a and direct light from the semiconductor laser element 110 will be irradiated. In other words, in order to make the adhesive 150a less likely to be irradiated with the laser beam, the area of the adhesive 150a in front view and side view (when viewed from the X-axis direction in this embodiment) should be reduced. Therefore, by arranging at least part of the adhesive 150a in the recess 134, the adhesive 150a is not increased in the area where the adhesive 150a is arranged in the front view and the side view, compared to the case where the recess 134 is not provided. The bonding area of 150a with the optical member 130a can be increased. As a result, deterioration of the adhesive 150a can be suppressed, and the base 120 and the optical member 130a can be prevented from being separated from each other.

The metal member 140a is a metal member that is arranged to adhere to the optical member 130a. The metal member 140a is arranged in contact with the optical member 130a by forming a metal film in the concave portion 134 of the optical member 130a using, for example, a sputtering method.

The adhesive 150a is an adhesive that bonds the optical member 130a and the base 120 via the metal member 140a. In this embodiment, it is arranged on each of the two metal members 140a respectively arranged in the concave portions 134 of the optical member 130a. Thus, at least a portion of adhesive 150 a is disposed in recess 134 . The adhesive 150a adheres the optical member 130a to the base 120 via the metal member 140a.

The two adhesives 150a are arranged at symmetrical positions with respect to the optical axis of the laser light emitted by the semiconductor laser element 110 when viewed from above. Also, the two adhesives 150a are applied in the same amount, for example.

(Embodiment 2)
Next, a semiconductor laser device according to Embodiment 2 will be described.

In the description of the semiconductor laser device according to the second embodiment, substantially the same components as those of the semiconductor laser device 100 according to the first embodiment are denoted by the same reference numerals, and the description is partially simplified or May be omitted.

FIG. 6 is a perspective view showing the semiconductor laser device 100b according to Embodiment 2 as viewed from the light emitting side. FIG. 7 is a perspective view showing the semiconductor laser device 100b according to the second embodiment as seen from the side opposite to the light emitting side.

The semiconductor laser device 100 b includes a laser module 210 , an optical holder 180 , an optical member 130 b, an adhesive 150 b, and a third light shielding member 200 .

FIG. 8 is an exploded perspective view showing laser module 210 according to the second embodiment.

The laser module 210 is a module that emits laser light. The laser module 210 includes a semiconductor laser element 110, a base 120a, a submount 220, and screws 230 and 231. As shown in FIG.

The base 120a is a table on which the semiconductor laser element 110 is arranged. In this embodiment, the semiconductor laser element 110 is mounted on a base 120a (more specifically, a lower base 122a) via a submount 220. As shown in FIG.

Holes 240 and 241 are provided in the lower base 122a. Further, through holes are provided at positions corresponding to the holes 240 and 241 in the upper base 121a. Screws 230 and 231 are arranged in the through holes. Screws 230 , 231 are screwed into holes 240 , 241 . Specifically, screw 230 is screwed into hole 240 . Also, the screw 231 is screwed into the hole 241 .

Thereby, the upper base 121a and the lower base 122b are fixed.

The submount 220 is a member on which the semiconductor laser element 110 is mounted and mounted on the base 120a. The submount 220 plays a role of enhancing heat dissipation of the semiconductor laser element 110 . Also, the submount 220 prevents the semiconductor laser element 110 from being destroyed due to the difference in thermal expansion coefficient between the semiconductor laser element 110 and the base 120a. A material employed for the submount 220 is not particularly limited. The material used for the submount 220 is, for example, a ceramic material or the like.

FIG. 9 is a perspective view showing an optical holder 180 according to Embodiment 2. FIG.

The optical holder 180 is a support member for supporting the optical member 130b. The optical member 130b is fixed by an optical holder 180 so that its position relative to the semiconductor laser element 110 does not move. The optical holder 180 includes a support portion 181, an arm portion 182 continuously provided from the support portion 181, and a spring 190 fixed to the support portion 181 with screws.

The support portion 181 is a fixing portion for fixing the optical member 130b. In this embodiment, the optical member 130b (more specifically, the tab 131 included in the optical member 130b) is pressed against the support portion 181 by the spring 190, thereby fixing the optical member 130b to the optical holder 180. . The lower surface of the optical member 130 b (more specifically, the BTU 132 ) is supported by a spring 190 .

The spring 190 is a leaf spring for fixing the optical member 130b to the support portion 181. As shown in FIG. The spring 190 is elongated, and both ends in the longitudinal direction are fixed to the support portion 181 by screws.

The arm portion 182 is provided continuously from the support portion 181 and is a member for fixing the support portion 181 to the base 120a. In this embodiment, the support portion 181 and the arm portion 182 are integrally formed. The optical holder 180 has two arm portions 182 .

When the semiconductor laser device 100b is viewed from the top, the two arm portions 182 extend from both ends of the elongated support portion 181 to the rear of the laser module 210 through the sides of the laser module 210. As shown in FIG. Specifically, as shown in FIG. 7, the respective ends of the two arm portions 182 are positioned behind the laser module 210 (that is, on the side opposite to the side from which the laser light is emitted) (from the base 120a). Specifically, it is fixed to the upper surface of the lower base 122a with an adhesive 150b.

The adhesive 150b is an adhesive that bonds the optical holder 180 and the base 120a. In this embodiment, they are arranged at respective ends of two arm portions 182 provided in the optical holder 180 .

A material employed for the adhesive 150b is not particularly limited. The adhesive 150b may be, for example, a thermosetting resin, a thermoplastic resin, or an ultraviolet curable resin.

Since the adhesive 150b is positioned on the opposite side of the laser module 210 from which the laser beam is emitted, the adhesive 150b is less likely to be irradiated with the laser beam. Therefore, the adhesive 150b is less likely to deteriorate due to laser light.

The third light shielding member 200 is a light shielding member that covers the adhesive 150b. The third light shielding member makes it more difficult for the adhesive 150b to be irradiated with laser light. The third light shielding member 200 only needs to have a light shielding property, and may be a light absorbing material that absorbs laser light or a light reflecting material that reflects laser light. The third light shielding member 200 may be a black member that absorbs laser light, or a metal plate that reflects laser light.

The optical member 130 b includes a tab 131 and a BTU 132 .

Tab 131 is a support member for supporting BTU 132 on optical holder 180 . The tab 131 and BTU 132 are adhered with an adhesive or the like. The material employed for tab 131 is not particularly limited. The material used for the tab 131 may be metal, resin, or glass, for example.

The BTU 132 includes a collimator lens that collimates the laser light (more specifically, the fast axis direction of the laser light), and a 90-degree rotating lens that rotates the laser light collimated by the collimator lens 90 degrees around the optical axis of the laser light. A BTU with image rotation optics.

Note that the tab 131 and the BTU 132 may be integrally formed.

(Modification of Embodiment 2)
Next, a semiconductor laser device according to a modification of the second embodiment will be described.

Note that in the description of the semiconductor laser device according to the modification of the second embodiment, the components that are substantially the same as those of the semiconductor laser device 100b according to the second embodiment are denoted by the same reference numerals, and the description is partly omitted. May be simplified or omitted.

FIG. 10 is a perspective view of a semiconductor laser device 100c according to a modification of the second embodiment, viewed from the side. FIG. 11 is a perspective view showing the semiconductor laser device 100c according to the modification of the second embodiment as viewed from another side.

The semiconductor laser device 100c includes a laser module 210a, an optical holder 180a, and an adhesive 150c.

The laser module 210a includes a base 120b. A groove portion 123 is provided in a lower base 122b included in the base 120b. In the present embodiment, one groove portion 123 is provided on each side surface on the rear side of the lower base 122b.

An arm portion 182a included in the optical holder 180a is continuously provided from the support portion 181 and fixes the support portion 181 to the base 120b. In this embodiment, the support portion 181 and the arm portion 182a are integrally formed. The optical holder 180a has two arm portions 182a.

The two arm portions 182a extend from both ends of the long support portion 181 to the rear side of the laser module 210 when the semiconductor laser device 100b is viewed from above. Specifically, as shown in FIG. 11, the respective ends of the two arm portions 182a are fitted into the groove portions 123. As shown in FIG. Also, the ends are fixed in grooves 123 by adhesive 150c.

The adhesive 150c is an adhesive that bonds the optical holder 180a and the base 120b. In the present embodiment, they are arranged at respective ends of the two arm portions 182 of the optical holder 180a, in other words, at the two groove portions 123, respectively.

A material employed for the adhesive 150c is not particularly limited. The adhesive 150c may be, for example, a thermosetting resin, a thermoplastic resin, or an ultraviolet curable resin.

Accordingly, since the adhesive 150c is surrounded by the groove 123, it is difficult to be irradiated with the laser beam.

(Other embodiments)
As described above, the semiconductor laser device according to the embodiment of the present disclosure has been described based on the embodiment and each modification, but the present disclosure is not limited to these embodiments and each modification. As long as it does not depart from the spirit of the present disclosure, various modifications that a person skilled in the art can think of are applied to each embodiment, or a form constructed by combining the components of different embodiments is also one or more aspects. may be included within the scope.

For example, the semiconductor laser device may include an insulating sheet having electrical insulation between the upper base and the lower base.

A semiconductor laser device according to the present disclosure is used, for example, as a light source for a processing device used for laser processing.

Reference Signs List 100, 100a, 100b, 100c semiconductor laser device 110 semiconductor laser element 111 light emitting point 120, 120a, 120b bases 121, 121a upper bases 122, 122a, 122b lower bases 123 grooves 130, 130a, 130b optical member 131 tab 132 BTUs
133 facing surface 134 concave portion 140, 140a metal member 150, 150a, 150b, 150c adhesive 160 first light shielding member 170 second light shielding member 180, 180a optical holder 181 supporting portion 182, 182a arm portion 190 spring 200 third light shielding member 210 , 210a laser module 220 submount 230, 231 screw 240, 241 hole

Claims (3)

a semiconductor laser element;
a base on which the semiconductor laser element is arranged;
an optical member through which the laser light emitted by the semiconductor laser element is transmitted;
a metal member arranged to adhere to the optical member;
an adhesive that is a resin that bonds the metal member and the base;
a first light shielding member positioned between the optical member and the semiconductor laser element, and positioned between a light emitting point of the semiconductor laser element from which the laser light is emitted and the adhesive ;
The elastic modulus of the first light shielding member is smaller than the elastic modulus of the adhesive after solidification.
Semiconductor laser device. 2. The semiconductor laser device according to claim 1 , further comprising a second light shielding member covering said adhesive. The optical member has a concave portion on a surface facing the semiconductor laser element,
3. The semiconductor laser device according to claim 1 , wherein said metal member and said adhesive are positioned in said recess.

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