JP2020145355A - Semiconductor laser device - Google Patents

Abstract

To provide a semiconductor laser device capable of suppressing degradation of beam quality.SOLUTION: A semiconductor laser device 100 includes: multiple amplification units 121 each outputting a beam of light; an external resonator 400 that has a fast axis collimator lens 163, a wavelength dispersion element 142, and a partial reflection mirror 150; a first base block 123 that supports the fast axis collimator lens 163 and the multiple amplification unit 121; and multiple adhesive materials 220 for fixing the fast axis collimator lens 163 to the first base block 123. The multiple adhesive materials 220 are arranged symmetrically with respect to the fast axis collimator lens 163.SELECTED DRAWING: Figure 4

Description

The present disclosure relates to a semiconductor laser device.

Conventionally, there is an external resonator type semiconductor laser device that resonates outside the semiconductor light emitting element (see, for example, Patent Document 1).

The conventional semiconductor laser device disclosed in Patent Document 1 includes a first semiconductor light emitting element, a second semiconductor light emitting element, a wavelength dispersion element, and a partial reflection mirror.

The light emitted from each of the first light emitting point of the first semiconductor light emitting element and the second light emitting point of the second semiconductor light emitting element is superimposed on one beam due to the wavelength dispersion effect of the wavelength dispersion element. The partial reflection mirror is irradiated.

Part of the light emitted to the partially reflected mirror is transmitted, and the light is emitted from the partially reflected mirror as a normal oscillation output beam (laser beam). The remaining part is reflected by the partial reflection mirror.

The light reflected by the partially reflected mirror propagates in the same optical path as the light from the first light emitting point and the second light emitting point to the partially reflected mirror, and propagates in the opposite direction to the first light emitting point and the second light emitting point. Return to. As a result, an external laser cavity (external cavity) is formed between the first semiconductor light emitting element and the second semiconductor light emitting element and the partial reflection mirror via the wavelength dispersion element.

The laser beam emitted through the partially reflected mirror is a laser beam in which two lights from a first light emitting point and a second light emitting point are superimposed by a wavelength dispersion element and pass through one optical path. Therefore, in the conventional semiconductor laser apparatus, the brightness can be doubled by the first semiconductor light emitting element and the second semiconductor light emitting element as compared with the case where there is only one semiconductor light emitting element.

Japanese Patent No. 6289640 Japanese Unexamined Patent Publication No. 2000-137139

When any of the optical elements of the external cavity deviates from a predetermined position for causing optical resonance, the optical output of the laser beam emitted from the semiconductor laser apparatus is reduced to a desired wavelength. There is a problem that the beam quality is deteriorated such that the laser beam cannot be obtained.

The present disclosure provides a semiconductor laser device capable of suppressing deterioration of beam quality.

The semiconductor laser apparatus according to one aspect of the present disclosure collimates a plurality of amplification units that emit light and the speed axis directions of light emitted from each of the plurality of amplification units to emit a plurality of lights. An axial collimator lens, a wavelength dispersion element that transmits or reflects a plurality of lights emitted from the speed axis collimator lens and emits the plurality of lights so as to pass through one optical path, and a wavelength dispersion element emitted from the wavelength dispersion element. An external resonator having a partial reflection mirror that transmits a part of the light and reflects another part, a base portion that supports the speed axis collimator lens and the plurality of amplification parts, and the speed axis collimator lens. A plurality of adhesives for fixing to the base portion, and a plurality of lights emitted from the speed axis collimator lens are superimposed on the wavelength dispersion element, and the plurality of adhesives are the speed axis. It is arranged symmetrically with respect to the collimator lens.

According to the semiconductor laser apparatus according to one aspect of the present disclosure, deterioration of beam quality can be suppressed.

FIG. 1 is a perspective view showing a semiconductor laser device according to an embodiment. FIG. 2 is a schematic diagram for explaining the resonance of light in the semiconductor laser device according to the embodiment. FIG. 3 is a perspective view showing a semiconductor element unit included in the semiconductor laser device according to the embodiment. FIG. 4 is a schematic diagram for explaining the positional relationship of a plurality of adhesives included in the semiconductor laser apparatus according to the embodiment. FIG. 5 is a perspective view showing a manufacturing process of a semiconductor element unit included in the semiconductor laser device according to the embodiment. FIG. 6A is a perspective view showing a wave junction portion included in the semiconductor laser device according to the embodiment. FIG. 6B is a side view showing a wave-matching portion included in the semiconductor laser device according to the embodiment. FIG. 7 is a perspective view showing a semiconductor element unit according to the first modification. FIG. 8 is a schematic diagram for explaining the positional relationship of the plurality of adhesives according to the first modification. FIG. 9 is a perspective view showing a semiconductor element unit according to the second modification. FIG. 10 is a schematic diagram for explaining the positional relationship of the plurality of adhesives according to the second modification. FIG. 11 is a diagram for explaining the optical holder according to the second modification. FIG. 12 is a perspective view showing a semiconductor laser device according to the third modification. FIG. 13 is a perspective view showing an amplification unit according to the third modification.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. It should be noted that all of the embodiments described below show a specific example of the present disclosure. The numerical values, shapes, materials, components, arrangement positions and connection forms of the components, steps, the order of steps, etc. shown in the following embodiments are examples, and are not intended to limit the present disclosure. The present disclosure is limited only by the scope of claims. Therefore, among the components in the following embodiments, the components not described in the independent claims indicating the highest level concept of the present disclosure will be described.

It should be noted that each figure is a schematic view and is not necessarily exactly illustrated. Therefore, for example, the scales and the like do not always match in each figure. Further, in each figure, the same reference numerals are given to substantially the same configurations, and duplicate explanations for substantially the same configurations may be omitted or simplified.

Further, in the following embodiments, the terms "upper" and "lower" do not refer to the upward direction (vertically upward) and the downward direction (vertically downward) in absolute spatial recognition. Also, the terms "upper" and "lower" are used not only when the two components are spaced apart from each other and another component exists between the two components, but also when the two components It also applies when the two components are placed in close contact with each other and touch each other.

Further, in the present specification and the drawings, the X-axis, the Y-axis, and the Z-axis indicate the three axes of the three-dimensional Cartesian coordinate system. In each embodiment, the Y-axis direction is the vertical direction, and the direction perpendicular to the Y-axis (the direction parallel to the XZ plane) is the horizontal direction.

Further, in the embodiment described below, the Y-axis positive direction may be described as upward and the Y-axis negative direction may be described as downward.

Further, in the embodiment described below, the "top view" means when the main surface is viewed from the normal direction of the main surface of the base.

(Embodiment)
[Constitution]
<Overall configuration>
FIG. 1 is a schematic perspective view showing a semiconductor laser device 100 according to an embodiment. FIG. 2 is a schematic view for explaining the resonance of light in the semiconductor laser device 100 according to the embodiment.

The semiconductor laser device 100 is an external resonator type laser device that emits a laser beam 310 using an external resonator 400. The semiconductor laser device 100 is used, for example, as a light source for a processing device that laser-processes an object.

The semiconductor laser device 100 includes a base 110, a plurality of semiconductor element units 120, a coupling optical system 130, a combiner 140, and a partial reflection mirror 150.

The base 110 is a table on which various components included in the semiconductor laser device 100 are placed. Specifically, the semiconductor element unit 120, the coupling optical system 130, the wave combining portion 140, and the partial reflection mirror 150 are mounted on the main surface 111 (upper surface of the base 110) of the base 110.

The material used for the base 110 is not particularly limited. The material used for the base 110 may be, for example, a metal material, a resin material, or a ceramic material.

Further, the shape of the base 110 is not particularly limited. In this embodiment, the base 110 is rectangular in top view. Also. The portion on which the semiconductor element unit 120 is placed is higher on the Y-axis positive direction side than the other portions.

The semiconductor element unit 120 is a light source unit having a semiconductor light emitting element (amplification unit) 121 that emits light. The light emitted from each of the plurality of semiconductor element units 120 (specifically, the plurality of semiconductor light emitting elements 121) includes a fast-axis collimator lens 163, a 90 ° image rotation optical system 162, a coupling optical system 130, and a combination. The partial reflection mirror 150 is irradiated through the wave portion 140. Part of the light emitted to the partial reflection mirror 150 is transmitted and emitted from the partial reflection mirror 150 as a normal oscillation output beam (laser light 310), and the other portion is reflected and emitted from the partial reflection mirror 150 to be reflected. It becomes light 320.

The reflected light 320 reflected by the partially reflected mirror 150 propagates in the opposite direction in the same optical path as the light directed from the semiconductor element unit 120 (specifically, the semiconductor light emitting element 121) to the partially reflected mirror 150. For example, in FIG. 2, the light from the semiconductor light emitting element 121 to the partial reflection mirror 150 is indicated by a solid arrow, and the light from the partial reflection mirror 150 to the semiconductor light emitting element 121 is indicated by a broken arrow.

As a result, between the semiconductor light emitting element 121 and the partial reflection mirror 150, the coupling optical system 130, the wavelength dispersion element 142 included in the wave combining portion 140, the 90 ° image rotation optical system 162, and the speed axis collimator lens 163 are inserted. Through this, optical resonance occurs, in other words, an external laser cavity (external cavity) is formed. A part of the resonated light is emitted as a laser beam 310 from the partial reflection mirror 150 as a laser beam 310.

The wavelength of the laser beam 310 emitted by the semiconductor laser device 100 may be arbitrarily set.

In the present embodiment, the semiconductor laser device 100 includes three semiconductor element units 120. Each of the three semiconductor element units 120 has one semiconductor light emitting element 121 that resonates light with the partial reflection mirror 150 via a coupling optical system 130, a combiner unit 140, and the like.

Further, the semiconductor light emitting element 121 emits laser light by generating light resonance with the external resonator 400. At this time, in the present embodiment, the semiconductor light emitting device 121 emits laser light so that the Y-axis direction is the speed axis.

The coupling optical system 130 is an optical element for superimposing and irradiating the light emitted from each of the three semiconductor element units 120 on the same position of the wavelength dispersion element 142 included in the combiner unit 140. In this embodiment, the coupling optical system 130 is one convex lens. The coupling optical system 130 collects the light emitted from each of the three semiconductor element units 120 on the wavelength dispersion element 142.

The coupling optical system 130 is on the optical path of the resonated light generated by the external resonator 400, and is arranged between the plurality of semiconductor light emitting elements 121 and the wavelength dispersion element 142. In the present embodiment, the coupling optical system 130 is arranged between the speed axis collimator lens 163 and the wavelength dispersion element 142. More specifically, the coupling optical system 130 is arranged between the 90 ° image rotation optical system 162 and the wavelength dispersion element 142.

In the present embodiment, the semiconductor laser device 100 includes one convex lens as the coupling optical system 130, but the shape of the lens of the coupling optical system 130 included in the semiconductor laser device 100, the number of lenses, and the like are not particularly limited. ..

The combiner unit 140 is an optical member having a wavelength dispersion element 142 that combines and emits light emitted from the coupling optical system 130 that passes through different optical paths so as to pass through one optical path. The combiner unit 140 has a wavelength dispersion element 142 on which a diffraction grating is formed, and the wavelength dispersion element 142 refracts and emits light incident from different directions and having different wavelengths at different angles. , A plurality of lights each passing through different optical paths are combined and emitted so as to pass through one optical path.

In a state where light resonance is generated between the plurality of semiconductor element units 120 and the partial reflection mirror 150, light passes through one optical path between the partial reflection mirror 150 and the confluence portion 140 to generate light. The wavelength of the light emitted by each of the plurality of semiconductor element units 120 is automatically determined so that the resonance of the above is generated. Further, since the light emitted from each of the plurality of semiconductor element units 120 is incident on the combiner unit 140 (more specifically, the wavelength dispersion element 142) from different directions, the plurality of semiconductor element units 120 The wavelengths of the light emitted from each are different from each other.

Therefore, the combiner 140 is the light emitted from each of the plurality of semiconductor element units 120, which is incident from different directions and has different wavelengths, so as to pass through one optical path. Waves and emits.

The partial reflection mirror 150 is an optical member that transmits a part of the light and emits the light, and reflects and emits the light of the other part. Specifically, the partial reflection mirror 150 reflects several% to several tens of% of the total light output in the light combined by the combining unit 140, and transmits the remaining several% to several tens of%.

The light reflectance of the partial reflection mirror 150 is not particularly limited. For example, the light reflectance of the partial reflection mirror may be 50% or more or less than 50%.

In the present embodiment, as shown in FIG. 2, the external resonator 400 is formed by the fast-axis collimator lens 163, the 90 ° image rotation optical system 162, the wavelength dispersion element 142, and the partial reflection mirror 150. In other words, the external resonator 400 includes a speed axis collimator lens 163, a 90 ° image rotation optical system 162, a wavelength dispersion element 142, and a partial reflection mirror 150.

The 90 ° image rotation optical system 162 is an optical element that rotates a spot of light emitted from the semiconductor light emitting element 121 by 90 °. Specifically, the 90 ° image rotation optical system 162 swaps the fast axis direction and the slow axis direction of the light emitted from the fast axis collimator lens 163. The 90 ° image rotation optical system 162 is, for example, a BTU (Beam Twisted Lens Unit). Further, for example, the 90 ° image rotation optical system 162 may be an optical luminous flux converter disclosed in Japanese Patent Application Laid-Open No. 2000-137139.

A part of the 90 ° image rotation optical system 162 is fixed to the optical holder 161 and the other part is fixed to the speed axis collimator lens 163.

The fast-axis collimator lens 163 is a lens that collimates the light in the fast-axis direction among the light emitted from the semiconductor light emitting element 121.

The light emitted from the semiconductor light emitting element 121 is collimated by the speed axis collimator lens 163 to become parallel light, and the light spot is rotated by 90 ° by the 90 ° image rotation optical system 162. .. In other words, the light emitted from the semiconductor light emitting device 121 is switched between the fast axis and the slow axis by the 90 ° image rotation optical system 162. Therefore, for example, the light emitted from the semiconductor light emitting element 121 passes through the optical unit 160 and becomes light that is collimated in the horizontal direction and whose vertical direction is the slow axis direction.

<Semiconductor element unit>
Subsequently, the configuration of the semiconductor element unit 120 will be described in detail with reference to FIGS. 3 to 5.

FIG. 3 is a perspective view showing a semiconductor element unit 120 included in the semiconductor laser device 100 according to the embodiment. FIG. 4 is a schematic diagram for explaining the positional relationship between the two adhesives 220 included in the semiconductor laser device 100 according to the embodiment. FIG. 5 is a perspective view showing a manufacturing process of the semiconductor element unit 120.

Note that, in FIG. 4, only a part of the component elements included in the semiconductor element unit 120 is shown, and the part of the component elements such as the second base block 125 is not shown.

As shown in FIGS. 3 to 5, the semiconductor element unit 120 includes a semiconductor light emitting element 121, a submount 122, a base 500, an insulating sheet 124, screws 210 and 211, and a 90 ° image rotation optical system 162. A speed axis collimator lens 163 is provided.

The semiconductor light emitting element 121 is a light source that emits light in the semiconductor element unit 120. Further, light resonance is generated between the partial reflection mirror 150 and the semiconductor light emitting element 121.

In the present embodiment, the semiconductor light emitting device 121 has one light emitting point and emits light from one place.

The material used for the semiconductor light emitting device 121 is not particularly limited.

The semiconductor light emitting device 121 is mounted on the submount 122.

The submount 122 is a member on which the semiconductor light emitting element 121 is mounted and is mounted on the first base block 123.

The submount 122 plays a role of enhancing the heat dissipation of the semiconductor light emitting element 121. Further, the submount 122 suppresses the semiconductor light emitting element 121 from being destroyed due to the difference in the coefficient of thermal expansion between the semiconductor light emitting element 121 and the first base block 123.

The material used for the submount 122 is not particularly limited. The material used for the submount 122 is, for example, a ceramic material or the like.

The base 500 is a base that supports at least one semiconductor light emitting element 121, a speed axis collimator lens 163, and a 90 ° image rotation optical system 162. The base 500 has a first base block 123 and a second base block 125.

The first base block 123 is a block on which the submount 122 on which the semiconductor light emitting element 121 is mounted is mounted. The first base block 123 is placed on the main surface 111 of the base 110.

The first base block 123 is formed with holes 200, 201, 202, and 203 on the upper surface into which screws for fixing the second base block 125, which will be described later, are fitted to the first base block 123.

The insulating sheet 124 is a sheet that electrically insulates the first base block 123 and the second base block 125 when the second base block 125 is arranged on the first base block 123.

The insulating sheet 124 may have any electrical insulating property, and any material may be adopted.

The second base block 125 is a block that is placed on the first base block 123 via the insulating sheet 124. Through holes are formed in the second base block 125 in accordance with the positions of the holes 200, 201, 202, and 203. For example, screws 210 and 211 are arranged in the through hole. The first base block 123 and the second base block 125 are fixed by screws 210 and 211.

The first base block 123 and the second base block 125 are formed of, for example, a metal material, a ceramic material, or the like.

Further, the first base block 123 is formed with two protrusions 126 on the light emitting side of the semiconductor light emitting element 121.

The two protrusions 126 are protrusions that protrude from the mounting surface 127 of the first base block 123 toward the normal direction of the mounting surface 127. The two protrusions 126 are arranged at positions symmetrical with respect to the optical axis of the light emitted from the semiconductor light emitting element 121 when viewed from above. An adhesive 220 is adhered to each of the two protrusions 126.

The plurality of adhesives 220 are adhesives for fixing the speed axis collimator lens 163 to the first base block 123. In the present embodiment, the speed axis collimator lens 163 is adhered and fixed to the 90 ° image rotation optical system 162. The plurality of adhesives 220 fix the speed axis collimator lens 163 to the first base block 123 by adhering the 90 ° image rotation optical system 162 and the protrusion 126 of the first base block 123.

The plurality of adhesives 220 are arranged symmetrically with respect to the speed axis collimator lens 163. In the present embodiment, the plurality of adhesives 220 are arranged symmetrically with respect to the fast-axis collimator lens 163 in a direction parallel to the slow-axis direction of the light emitted from the amplification unit 121. In other words, the positions of the plurality of adhesives 220 are symmetrical with respect to the optical axis 600 of the speed axis collimator lens 163 in top view (that is, when the adhesive 220 is viewed from the normal direction of the mounting surface 127). It is located in. Further, in the present embodiment, the optical axis of the light emitted by the semiconductor light emitting element 121 and the optical axis of the speed axis collimator lens 163 coincide with each other. Therefore, the plurality of adhesives 220 are arranged at positions symmetrical with respect to the fast-axis collimator lens 163 and symmetrical with respect to the optical axis of the light emitted by the semiconductor light emitting element 121 in the top view. ing. In the present embodiment, the plurality of adhesives 220 are arranged symmetrically with respect to the fast-axis collimator lens 163 in a direction parallel to the slow-axis direction of the light emitted from the semiconductor light emitting element 121. More specifically, in the present embodiment, the two adhesives 220 are parallel to the speed axis collimator lens 163 in the array direction of the plurality of semiconductor light emitting elements 121 (in the present embodiment, the Z axis direction). They are arranged symmetrically in pairs in the same direction.

The two adhesives 220 are applied at symmetrical positions and in the same amount with respect to the speed axis collimator lens 163.

The material used for the adhesive 220 is not particularly limited. The adhesive 220 may be, for example, a thermosetting resin, a thermoplastic resin, or an ultraviolet curable resin. In the present embodiment, an ultraviolet curable resin is used for the adhesive 220.

Subsequently, the manufacturing process of the semiconductor element unit 120 will be described.

As shown in FIG. 5A, first, the semiconductor light emitting device 121, the submount 122, and the first base block 123 are prepared.

Next, as shown in FIG. 5B, the insulating sheet 124 is arranged on the upper surface of the first base block.

Through holes are formed in the insulating sheet 124 in accordance with the positions of the holes 200, 201, 202, and 203.

Next, as shown in FIG. 5 (c), the second base block 125 is arranged on the first base block 123. Specifically, the second base block 125 is arranged on the first base block 123 via the insulating sheet 124 so as to sandwich the insulating sheet 124 together with the first base block 123.

Further, through holes are formed in the second base block 125 in accordance with the positions of the holes 200, 201, 202 and 203. For example, screws 210 and 211 are arranged in the through hole. The first base block 123 and the second base block 125 are fixed by screws 210 and 211.

Next, as shown in FIG. 5D, the speed axis collimator lens 163 and the 90 ° image rotation optical system 162 are arranged at positions in the semiconductor element unit 120 where the light emitted by the semiconductor light emitting element 121 is irradiated. .. The fast-axis collimator lens 163 and the 90 ° image rotation optical system 162 are adhered to the side surface of the protrusion 126 of the first base block 123 by two adhesives 220.

As shown in FIG. 5C, the first base block 123 may have an inclined portion 128 formed on a part of the side irradiated with the light emitted by the semiconductor light emitting element 121. By doing so, the speed axis collimator lens 163 and the 90 ° image rotation optical system 162 can be easily arranged in the first base block 123.

The inclined portion 128 is inclined with respect to the optical axis 600 when the semiconductor element unit 120 is viewed from the side (in the present embodiment, when the XY plane is viewed from the Z-axis direction). More specifically, when the semiconductor element unit 120 is viewed from the side, the inclined portion 128 is directed from the optical axis 600 toward the traveling direction side of the light emitted from the speed axis collimator lens 163 toward the coupling optical system 130. It is tilted with respect to the optical axis 600 so as to be separated vertically downward.

<Combination part>
Subsequently, the configuration of the combine unit 140 will be described in detail with reference to FIGS. 6A and 6B. FIG. 6A is a perspective view showing the merging unit 140. FIG. 6B is a front view showing the combined wave portion 140.

Note that FIG. 6B is a diagram showing a case where the wave junction 140 is viewed from the normal direction of the surface of the wavelength dispersion element 142 on which the light emitted from the semiconductor element unit 120 is incident.

As shown in FIGS. 6A and 6B, the combiner unit 140 includes a base 141, a wavelength dispersion element 142, a pressing unit 143, and an adjusting screw 212.

The base 141 is a base on which the wavelength dispersion element 142 is placed. The base 141 fixes the wavelength dispersion element 142 at an arbitrary height. The base 141 is placed on the main surface 111 of the base 110 and fixed to the base 110.

The base 141 may be fixed to the base 110 with an adhesive or the like, or may be integrally formed with the base 110.

The material used for the base 141 is not particularly limited. The material used for the base 141 may be, for example, a metal material or a ceramic material.

Further, the base 141 has an inclined portion 148 on the surface on the side where the wavelength dispersion element 142 emits light toward the partial reflection mirror 150.

The inclined portion 148 is an inclined surface formed on the base 141. The inclined portion 148 is inclined in a top view with respect to the surface of the wavelength dispersion element 142 on the side that emits light, for example. From the wavelength dispersion element 142, the light obtained by combining a plurality of lights from the plurality of semiconductor light emitting elements 121 is inclined from the normal direction with respect to the surface of the wavelength dispersion element 142 on which the light is emitted from the top view. It is refracted and emitted. Therefore, depending on the size of the base 141, the light emitted from the wavelength dispersion element 142 toward the partial reflection mirror 150 may be applied to the base 141. Therefore, since the base 141 has the inclined portion 148, it is possible to prevent the base 141 from being irradiated with the light emitted from the wavelength dispersion element 142 toward the partial reflection mirror 150.

The wavelength dispersion element 142 is an optical element on which a diffraction grating is formed. Specifically, the wavelength dispersion element 142 has a diffraction grating in which a plurality of grooves extending in the first direction are arranged side by side in a direction orthogonal to the first direction. In the present embodiment, the first direction is the Y-axis direction.

For example, the wavelength dispersion element 142 is irradiated with light emitted from each of the plurality of semiconductor element units 120 in the central portion. Therefore, one light spot 300 formed by superimposing a plurality of lights emitted from the speed axis collimator lens 163 is located at the center of the wavelength dispersion element 142. The wavelength dispersion element 142 combines the light emitted from each of the plurality of semiconductor element units 120 and emits the light toward the partial reflection mirror 150 so as to pass through one optical path.

In the light spot 300, it is preferable that the optical axes of the plurality of lights emitted from the speed axis collimator lens 163 are overlapped by the wavelength dispersion element 142. Further, in the light spot 300, it is not necessary that the light spots 300 of the plurality of lights emitted from the speed axis collimator lens 163 are completely superimposed, and at least one of the plurality of lights emitted from the speed axis collimator lens 163 is at least one. It suffices if the light of the part is superimposed.

Further, the wavelength dispersion element 142 emits the reflected light 320 reflected by the partial reflection mirror 150 toward each of the semiconductor element units 120. Specifically, the wavelength dispersion element 142 demultiplexes the reflected light 320 and emits it toward each of the semiconductor element units 120 so as to pass through the original optical path of the light emitted from each of the semiconductor element units 120. To do.

The wavelength dispersion element 142 may be made of a material having a diffraction grating formed and having translucency. The wavelength dispersion element 142 is made of, for example, a resin material, glass, or the like.

For example, as shown in FIG. 1, in the present embodiment, the wavelength dispersion element 142 is a transmission type that transmits light, but may be a reflection type that reflects light.

Further, the pitch of the grooves of the diffraction grating formed on the wavelength dispersion element 142 is not particularly limited. The pitch may be arbitrarily formed so that the laser beam 310 has a desired wavelength.

The pressing portion 143 fixes the wavelength dispersion element 142 to the base 141 by pressing the wavelength dispersion element 142 against the base 141. Specifically, the pressing portion 143 fixes the wavelength dispersion element 142 to the base 141 by pressing the wavelength dispersion element 142 in a direction parallel to the first direction. The pressing portion 143 is, for example, a leaf spring.

The pressing portion 143 is T-shaped in the top view, and is long in a direction parallel to the long direction of the wavelength dispersion element 142 in the top view. One end of the pressing portion 143 is fixed to the base 141 by the adjusting screw 212, and the other end is formed with a convex portion 145 protruding from the surface of the flat plate-shaped pressing portion 143 toward the wavelength dispersion element 142. .. The wavelength dispersion element 142 is pressed and fixed to the base 141 by being pressed by the convex portion 145.

The adjusting screw 212 may have a configuration in which the pressing force applied to the wavelength dispersion element 142 by the pressing portion 143 fixed to the adjusting screw 212 can be adjusted by adjusting the degree of fastening.

In this way, the wave combining portion 140 included in the semiconductor laser device 100 is pressed by leaf springs (pressing portion 143) from the upper surfaces of both ends of the wavelength dispersion element 142 to fix the wavelength dispersion element 142. Further, the combiner 140 has a configuration in which the pressing force on the wavelength dispersion element 142 can be changed by rotating the adjusting screw (adjusting screw 212) that supports the other end of the leaf spring, for example. May be good.

Further, the pressing portion 143 is a direction parallel to the first direction (Y-axis direction) of the light spot 300 formed by superimposing a plurality of lights emitted from the speed axis collimator lens 163 on the wavelength dispersion element 142. In, the wavelength dispersion element 142 is fixed to the base 141 by pressing the wavelength dispersion element 142 at one place. In the present embodiment, the light spot 300 is located at the center of the wavelength dispersion element 142 in front view. Therefore, in the present embodiment, the pressing portion 143 presses the wavelength dispersion element 142 at one place in the central portion in the longitudinal direction of the wavelength dispersion element 142 in the top view, so that the wavelength dispersion element 142 is used as the base 141. It is fixed. For example, the pressing unit 143 presses the wavelength dispersion element 142 downward above the light spot 300 on which a plurality of lights from the plurality of semiconductor light emitting elements 121 are superimposed.

[Effects, etc.]
As described above, the semiconductor laser apparatus 100 according to the embodiment collimates the speed axis directions of the plurality of semiconductor light emitting elements 121 that emit light and the light emitted from each of the plurality of semiconductor light emitting elements 121. A wavelength dispersion element 142 that transmits or reflects a plurality of lights emitted from the fast-axis collimator lens 163 and the fast-axis collimator lens 163 and emits the plurality of lights so as to pass through one optical path. An external resonator 400 having a partial reflection mirror 150 that transmits a part of the light emitted from the wavelength dispersion element 142 and reflects the other part, a fast-axis collimator lens 163, and a plurality of semiconductor light emitting elements 121. A base portion 500 for supporting the above, and a plurality of adhesives 220 for fixing the speed axis collimator lens 163 to the base portion 500 are provided. Further, the plurality of lights emitted from the speed axis collimator lens 163 are superimposed on the wavelength dispersion element 142. Further, the plurality of adhesives 220 are arranged symmetrically with respect to the speed axis collimator lens 163.

In the present embodiment, the semiconductor laser apparatus 100 collimates the speed axis directions of the three semiconductor light emitting elements 121 that emit light and the light emitted from each of the three semiconductor light emitting elements 121, and each emits light. A wavelength dispersion element that transmits or reflects a plurality of lights emitted from each of the three fast-axis collimator lenses 163 and the three fast-axis collimator lenses 163 and emits the plurality of lights so as to pass through one optical path. An external resonator 400 having a partial reflection mirror 150 that transmits a part of the light emitted from the 142 and the wavelength dispersion element 142 and reflects the other part, one fast-axis collimator lens 163, and one semiconductor. It includes three first base blocks 123 that support the light emitting element 121. Two adhesives 220 for fixing the speed axis collimator lens 163 to the first base block 123 are provided for one first base block 123.

Each component of the semiconductor laser device 100 whose position is accurately adjusted by expanding or contracting the two adhesives 220 due to heat generated by the light generated by the semiconductor laser device 100, an external force applied to the semiconductor laser device 100, or the like. It becomes a factor to move. In particular, the optical components constituting the external resonator 400 such as the fast-axis collimator lens 163 have a slight deviation from a desired position, such as the light output, wavelength, spot diameter, etc. of the laser beam 310 emitted from the semiconductor laser device 100. Has a great effect on the beam quality of. Here, the two adhesives 220 are arranged at positions symmetrical with respect to the speed axis collimator lens 163. More specifically, the two adhesives 220 are applied at symmetrical positions and in the same amount with respect to the speed axis collimator lens 163. As a result, the two adhesives 220 cancel each other out the forces exerted on the fast-axis collimator lens 163 by expanding or contracting. Therefore, the speed axis collimator lens 163 is suppressed from moving from the position in the adjusted state. As described above, according to the semiconductor laser apparatus 100, deterioration of beam quality can be suppressed.

Further, for example, the plurality of adhesives 220 are arranged symmetrically with respect to the speed axis collimator lens 163 in a direction parallel to the slow axis direction of the light emitted from the semiconductor light emitting element 121.

For example, if the force of attracting or pressing the speed axis collimator lens 163 in the Z axis direction shown in FIG. 3 is different between the two adhesives 220, it can be considered that the two adhesives are tilted with respect to the Z axis in the XZ plane. Then, the reflected light 320, which is the light emitted from the semiconductor light emitting element 121, may return to the semiconductor light emitting element 121 different from the semiconductor light emitting element 121 without returning to the semiconductor light emitting element 121 from which the light is emitted. .. In this case, unintended resonance occurs, so that, for example, the laser beam 310 contains an unintended wavelength, the light output is reduced at a desired wavelength, and the beam quality is deteriorated. Therefore, the two adhesives are arranged so that the plurality of adhesives 220 are arranged symmetrically with respect to the fast-axis collimator lens 163 in a direction parallel to the slow-axis direction of the light emitted from the semiconductor light emitting element 121. In 220, the force of attracting or pressing the speed axis collimator lens 163 in the Z-axis direction shown in FIG. 3 becomes equal. As a result, the deterioration of beam quality is suppressed. Further, in the present embodiment, one speed-axis collimator lens elongated in the Z-axis direction is used, but the semiconductor laser device 100 uses a plurality of speed-axis collimator lenses according to the number of the plurality of semiconductor light emitting elements 121. May be prepared. In this case, the optical axis of the light emitted from the semiconductor light emitting element 121 may deviate from a predetermined position only by moving the speed axis collimator lens in the Z-axis direction. In such a case, a plurality of adhesives 220 are arranged symmetrically with respect to the speed axis collimator lens 163 in a direction parallel to the slow axis direction of the light emitted from the semiconductor light emitting element 121. By reducing the occurrence of deviation in the Z-axis direction of each of the speed-axis collimator lenses, the deterioration of beam quality can be suppressed. Further, in the present embodiment, the 90 ° image rotation optical system 162 is adhered to the speed axis collimator lens 163. Therefore, when the speed axis collimator lens 163 deviates from a predetermined position in the Z-axis direction, the position of the 90 ° image rotation optical system 162 also deviates from the predetermined position. As a result, the optical axis of the light emitted from the semiconductor light emitting device 121 may be deviated from the predetermined position by the 90 ° image rotation optical system 162 deviated from the predetermined position. In such a case, a plurality of adhesives 220 are arranged symmetrically with respect to the speed axis collimator lens 163 in a direction parallel to the slow axis direction of the light emitted from the semiconductor light emitting element 121. By reducing the occurrence of deviation in the Z-axis direction of each of the speed-axis collimator lenses, the deterioration of beam quality can be suppressed.

Further, for example, the external resonator 400 further couples the plurality of semiconductor light emitting elements 121 and the wavelength dispersion element 142 so that the light emitted from each of the plurality of semiconductor light emitting elements 121 is superimposed on the wavelength dispersion element 142. It includes an optical system 130. In the present embodiment, the coupling optical system 130 transmits a plurality of lights emitted from the speed axis collimator lens 163 between the speed axis collimator lens 163 and the wavelength dispersion element 142 to one light spot 300 by the wavelength dispersion element 142. Overlay so that

According to such a configuration, for example, since the light emitted from each of the plurality of semiconductor light emitting elements 121 can be collected by the coupling optical system 130, the distance between the plurality of semiconductor light emitting elements 121 and the wavelength dispersion element 142 can be shortened. However, the light emitted from each of the plurality of semiconductor light emitting elements 121 can be easily converted into one light spot 300 by the wavelength dispersion element 142. Therefore, according to such a configuration, the semiconductor laser device 100 can be miniaturized.

Further, for example, the external resonator 400 further includes a 90 ° image rotation optical system 162 that exchanges the speed axis direction and the slow axis direction of the plurality of lights emitted from the speed axis collimator lens 163.

In the present embodiment, the respective speed axis directions of the plurality of lights emitted from the speed axis collimator lens 163 and the first direction in which the groove of the diffraction grating extends are parallel directions. Therefore, the speed axis direction of each of the plurality of lights emitted from the speed axis collimator lens 163 is perpendicular to the first direction so as to be inverted to the slow axis direction by the 90 ° image rotation optical system 162. Therefore, the wavelength dispersion element 142 is incident with light in a collimated state in a direction perpendicular to the first direction that affects the diffraction of light (that is, the arrangement direction of the grooves of the diffraction grating). In 142, the deviation of the diffraction angle from the desired position due to the light divergence angle can be reduced.

(Modification example 1)
Subsequently, the semiconductor laser apparatus according to the first modification will be described. The semiconductor laser device according to the first modification differs only in the configuration of the semiconductor element unit from the semiconductor laser device 100 according to the embodiment. Therefore, in the description of the semiconductor laser device according to the first modification, the configuration of the semiconductor element unit will be mainly described.

[Constitution]
FIG. 7 is a perspective view showing a semiconductor element unit 120a included in the semiconductor laser device according to the first modification. FIG. 8 is a diagram for explaining the positions of the plurality of adhesives 220a according to the first modification.

Note that, in FIG. 8, only a part of the component elements included in the semiconductor element unit 120a is shown, and the part of the component elements such as the second base block 125a is not shown.

The semiconductor element unit 120a includes a semiconductor light emitting element 121, a base portion 500a, screws 210 and 211, a 90 ° image rotation optical system 162, and a speed axis collimator lens 163.

Although not shown, the semiconductor element unit 120a includes an insulating sheet 124 between the first base block 123a and the second base block 125a, similarly to the semiconductor element unit 120. Further, although not shown, the semiconductor element unit 120a is mounted on the first base block 123a and includes a submount 122 on which the semiconductor light emitting element 121 is mounted, similarly to the semiconductor element unit 120.

The base portion 500a is a base that supports at least one semiconductor light emitting element 121, a speed axis collimator lens 163, and a 90 ° image rotation optical system 162. The base 500a has a first base block 123a and a second base block 125a.

The first base block 123a is a block on which a submount 122 (for example, see FIG. 5) on which the semiconductor light emitting element 121 is mounted is mounted.

Further, in order to facilitate the arrangement of the speed axis collimator lens 163 and the 90 ° image rotation optical system 162 on the first base block 123a, the side irradiated with the light emitted by the semiconductor light emitting element 121 A flat surface portion 128a may be formed as a part of the above.

The flat surface portion 128a is a plane parallel to the mounting surface 127 when the semiconductor element unit 120a is viewed from the side, and is located vertically below the mounting surface 127. By doing so, the speed axis collimator lens 163 and the 90 ° image rotation optical system 162 can be easily installed at the positions corresponding to the semiconductor light emitting element 121. As described above, in order to facilitate the arrangement of the speed axis collimator lens 163 and the 90 ° image rotation optical system 162 in the first base block, the inclined portion 128 may be provided as in the first base block 123, or the first base block 123 may be provided. A flat surface portion 128a may be provided as in the case of the base block 123a.

Further, unlike the first base block 123, the first base block 123a is not provided with the protrusion 126.

The second base block 125a is a block that is placed on the first base block 123a via an insulating sheet 124 (see, for example, FIG. 5).

The first base block 123a and the second base block 125a are fixed by screws 210 and 211.

Further, unlike the second base block 125, the second base block 125a is formed with two protrusions 126a protruding toward the light emitting side of the semiconductor light emitting element 121 on the light emitting side.

The two protrusions 126a are located above the 90 ° image rotation optical system 162 and the speed axis collimator lens 163. The 90 ° image rotation optical system 162 and the speed axis collimator lens 163 are located between the two protrusions 126a and the flat surface portion 128a of the first base block. Specifically, the 90 ° image rotation optical system 162 and the speed axis collimator lens 163 are adhered to the two protrusions 126a and the flat surface portion 128a of the first base block 123a by a plurality of adhesives 220a. More specifically, the speed axis collimator lens 163 is adhered and fixed to the 90 ° image rotation optical system 162, and the 90 ° image rotation optical system 162 is adhered to a plurality of adhesives 220a.

The plurality of adhesives 220a are adhesives for fixing the speed axis collimator lens 163 to the first base block 123a and the second base block 125a (that is, the base portion 500a). In the present embodiment, the speed axis collimator lens 163 is adhered and fixed to the 90 ° image rotation optical system 162. The plurality of adhesives 220a adhere the 90 ° image rotation optical system 162 to the flat surface portion 128a of the first base block 123 and the protrusion 126a of the second base block 125a to form the speed axis collimator lens 163 at the base portion 500a. It is fixed to.

The plurality of adhesives 220a are arranged symmetrically with respect to the speed axis collimator lens 163. In the present embodiment, the plurality of adhesives 220a are arranged symmetrically with respect to the speed axis collimator lens 163 in a direction parallel to the speed axis direction of the light emitted from the semiconductor light emitting element 121. In other words, the plurality of adhesives 220a are symmetrical in the vertical direction with respect to the optical axis 600 of the speed axis collimator lens 163 in front view (that is, when the adhesive 220a is viewed from the light emitting side of the semiconductor light emitting element 121). It is arranged at the position where. Further, in the present embodiment, the four adhesives 220a are twice symmetrical with respect to the optical axis 600 of the speed axis collimator lens 163. The four adhesives 220a are applied at positions symmetrically with respect to the optical axis 600 of the speed axis collimator lens 163 and in the same amount.

The material used for the adhesive 220a is not particularly limited. In the present embodiment, an ultraviolet curable resin is used for the adhesive 220a.

[Effects, etc.]
As described above, in the semiconductor element unit 120a included in the semiconductor laser device according to the first modification, the plurality of adhesives 220 are the speeds of light emitted from the semiconductor light emitting element 121 with respect to the speed axis collimator lens 163. They are arranged symmetrically in a direction parallel to the axial direction.

For example, when the speed axis collimator lens 163 deviates from a predetermined position in the Y axis direction shown in FIG. 7, the speed axis direction of the light emitted from the plurality of semiconductor light emitting elements 121 (in the present embodiment, the Y axis direction). Due to the wide furfield distribution of the above, a part of the light is not incident on the speed axis collimator lens 163, which causes a decrease in the light output of the semiconductor laser device according to the present disclosure including the semiconductor element unit 120a. Alternatively, when the speed axis collimator lens 163 deviates from a predetermined position in the Y-axis direction shown in FIG. 7, it is a surface in the 90 ° image rotation optical system 162 which is arranged so as to be adhered to the speed axis collimator lens 163. On the surface that emits light toward the wavelength dispersion element 142, it is conceivable that some light is emitted from an unintended position without being emitted from the surface. This case also causes a decrease in the optical output of the semiconductor laser device according to the present disclosure including the semiconductor element unit 120a. Therefore, the plurality of adhesives 220 are arranged symmetrically with respect to the speed axis collimator lens 163 in the direction parallel to the speed axis direction of the light emitted from the semiconductor light emitting element 121, so that the speed axis collimator lens By reducing the deviation of 163 from a predetermined position in the Y-axis direction, the decrease in light output is reduced.

(Modification 2)
Subsequently, the semiconductor laser apparatus according to the second modification will be described. The semiconductor laser device according to the second modification differs only in the configuration of the semiconductor element unit from the semiconductor laser device 100 according to the embodiment. Therefore, in the description of the semiconductor laser device according to the second modification, the configuration of the semiconductor element unit will be mainly described.

[Constitution]
FIG. 9 is a perspective view showing a semiconductor element unit 120b included in the semiconductor laser device according to the second modification. FIG. 10 is a diagram for explaining the positions of the plurality of adhesives 220b according to the second modification.

The semiconductor element unit 120b includes a semiconductor light emitting element 121, a base 500b, screws 210 and 211, a 90 ° image rotation optical system 162, a speed axis collimator lens 163, and an optical holder 161.

Although not shown, the semiconductor element unit 120b is provided with an insulating sheet 124 between the first base block 123a and the second base block 125b, similarly to the semiconductor element unit 120. Further, although not shown, the semiconductor element unit 120b is mounted on the first base block 123a and includes a submount 122 on which the semiconductor light emitting element 121 is mounted, similarly to the semiconductor element unit 120.

The base portion 500b is a base that supports at least one semiconductor light emitting element 121, a speed axis collimator lens 163, and a 90 ° image rotation optical system 162. The base 500a has a first base block 123a and a second base block 125b.

The second base block 125b is a block that is placed on the first base block 123a via an insulating sheet 124 (see, for example, FIG. 5).

The first base block 123a and the second base block 125b are fixed by screws 210 and 211.

Further, unlike the second base block 125, the second base block 125b is formed with two protrusions 126b protruding toward the light emitting side of the semiconductor light emitting element 121 on the light emitting side.

The two protrusions 126b are located above the 90 ° image rotation optical system 162, the speed axis collimator lens 163, and the optical holder 161. The 90 ° image rotation optical system 162, the speed axis collimator lens 163, and the optical holder 161 are located between the two protrusions 126b and the flat surface portion 128a of the first base block. Specifically, the 90 ° image rotation optical system 162, the speed axis collimator lens 163, and the optical holder 161 are adhered to the two protrusions 126b and the flat surface portion 128a of the first base block 123a by a plurality of adhesives 220b. Has been done. More specifically, the speed axis collimator lens 163, the 90 ° image rotation optical system 162, and the optical holder 161 are adhered and fixed to each other, and the optical holder 161 is adhered to a plurality of adhesives 220b. ing.

FIG. 11 is a diagram for explaining the positional relationship of the optical holder 161 according to the second modification.

The optical holder 161 is a member for fixing the 90 ° image rotation optical system 162 and the speed axis collimator lens 163 to the light emitting side of the semiconductor light emitting element 121. In the present embodiment, a part of the optical holder 161 is fixed to the second base block 125, and another part is fixed to the 90 ° image rotation optical system 162.

As described above, the semiconductor element unit 120b included in the semiconductor laser apparatus according to the second modification includes an optical holder 161 that supports the speed axis collimator lens 163 together with the base portion 500b. The adhesive 220b fixes the speed axis collimator lens 163 to the base 500 by adhering the optical holder 161 and the base 500b.

The material used for the optical holder 161 is, for example, glass, a metal material, or the like.

Further, the tips of the two protrusions 126b are bent vertically downward on the side where the light of the semiconductor light emitting element 121 is emitted (that is, the side in the positive direction of the X-axis). The plurality of adhesives 220b bond the side surface of the optical holder 161 on the X-axis direction side, the two protrusions 126b, and the side surface of the second base block 125b, respectively.

The plurality of adhesives 220b are adhesives for fixing the speed axis collimator lens 163 to the first base block 123a and the second base block 125b (that is, the base portion 500b). In the present embodiment, the speed axis collimator lens 163 is adhered and fixed to the 90 ° image rotation optical system 162.

The plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163. In the present embodiment, the plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163 when viewed from a direction perpendicular to the optical axis 600 of the speed axis collimator lens 163. In other words, the plurality of adhesives 220a are arranged at positions symmetrical in the direction orthogonal to the optical axis 600 of the speed axis collimator lens 163 in the side view. In the present embodiment, the plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163 when viewed from the side. Further, in the present embodiment, the plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163 when viewed from above. Further, in the present embodiment, the four adhesives 220b are twice symmetrical with respect to the center of the optical holder 161 when viewed from above. The four adhesives 220b are applied in equal amounts.

The material used for the adhesive 220b is not particularly limited. In the present embodiment, an ultraviolet curable resin is used for the adhesive 220b.

[Effects, etc.]
As described above, in the semiconductor element unit 120b included in the semiconductor laser device according to the second modification, the plurality of adhesives 220b are fast when viewed from the direction perpendicular to the optical axis 600 of the speed axis collimator lens 163. It is arranged symmetrically with respect to the axial collimator lens 163. In the present embodiment, the plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163 when viewed from the side. Further, in the present embodiment, the plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163 when viewed from above.

For example, when the speed axis collimator lens 163 deviates from a predetermined position in the X-axis direction (light emission direction of the semiconductor light emitting element 121) shown in FIG. 10, the light is perpendicular to the incident surface of the light in the partial reflection mirror 150. It is not incident and is incident with a slight inclination with respect to the vertical direction of the incident surface. As a result, the intensity of the light reflected by the partial reflection mirror 150 and returned to the semiconductor light emitting element 121 decreases, and the resonance of the light becomes unstable. Therefore, when the plurality of adhesives 220b are arranged symmetrically with respect to the speed axis collimator lens 163 when viewed from the direction perpendicular to the optical axis 600 of the speed axis collimator lens 163, the resonance of light is generated. Unstable state can be suppressed.

(Modification 3)
Subsequently, the semiconductor laser apparatus according to the third modification will be described. The semiconductor laser device according to the third modification differs only in the configuration of the amplification unit included in the semiconductor laser device 100 according to the embodiment and the 90 ° image rotation optical system. Therefore, in the description of the semiconductor laser device according to the third modification, the configuration of the amplification unit and the 90 ° image rotation optical system will be mainly described.

[Constitution]
FIG. 12 is a perspective view showing the semiconductor laser device 100a according to the third modification. FIG. 13 is a perspective view showing the amplification unit 121a according to the third modification.

In FIG. 13, a plurality of amplification units 121a (semiconductor light emitting element array 190) among the components included in the semiconductor element unit 120c, a speed axis collimator lens 163, and a plurality of 90 ° image rotation optical systems 162a (90). ° Image rotation optical system array 170) is shown, and illustration is omitted for other components. Further, in FIG. 13, the speed axis collimator lens 163 and the 90 ° image rotation optical system array 170 are arranged apart from each other, but they may be in contact with each other.

In the semiconductor element unit 120c, from the semiconductor element unit 120 according to the embodiment, the semiconductor light emitting element 121 becomes the semiconductor light emitting element array 190, and the 90 ° image rotating optical system 162 becomes the 90 ° image rotating optical system array 170. The other components have the same configuration as the semiconductor element unit 120 shown in FIG. 4, for example.

The semiconductor light emitting device array 190 is a semiconductor light emitting device having a plurality of amplification units 121a. The semiconductor light emitting device array 190 emits light from each of the plurality of amplification units 121a toward the speed axis collimator lens 163. In other words, the semiconductor light emitting device array 190 emits a plurality of lights toward the fast axis collimator lens 163.

As described above, the semiconductor laser device according to the present disclosure may be provided with a plurality of amplification units that emit light. For example, as shown in FIG. 2, a plurality of amplification units are realized by the plurality of semiconductor light emitting elements 121. Alternatively, as shown in FIG. 12, a plurality of amplification units 121a may be realized by the semiconductor light emitting device array 190. Further, the semiconductor laser device according to the present disclosure may have one or more speed axis collimator lenses 163, and may be provided with one speed axis collimator lens 163 for one amplification unit, or may have a plurality of speed axis collimator lenses 163. One speed axis collimator lens may be provided for the amplification unit.

The 90 ° image rotation optical system array 170 is an array lens including a plurality of 90 ° image rotation optical systems 162a. Specifically, the 90 ° image rotation optical system array 170 includes the same number of 90 ° image rotation optical systems 162a as the amplification units 121a.

The 90 ° image rotation optical system array 170 is arranged between the speed axis collimator lens 163 and the wavelength dispersion element 142, similarly to the 90 ° image rotation optical system 162 shown in FIG.

Here, the 90 ° image rotation optical system array 170 includes a plurality of 90 ° image rotation optical systems 162a at the same pitch as the plurality of amplification units 121a. In other words, the 90 ° image rotation optical system array 170 includes a plurality of 90 ° image rotation optical systems 162a at a pitch equal to the light emitting points 330 of the plurality of amplification units 121a. As described above, the semiconductor laser device according to the present disclosure is emitted from the fast-axis collimator lens 163, which is arranged between the fast-axis collimator lens 163 and the wavelength dispersion element 142 at the same pitch as the plurality of amplification units 121a. A 90 ° image rotating optical system array 170 having a plurality of 90 ° image rotating optical systems 162a that switch the fast axis direction and the slow axis direction of light may be provided. Here, for example, the pitch of the plurality of 90 ° image rotation optical systems 162a is the distance between the centers of the plurality of 90 ° image rotation optical systems 162a. Here, the center is, for example, the center in the top view of the 90 ° image rotation optical system 162a, or the 90 ° image rotation optical system array 170 from the normal direction of the light emitting surface of the 90 ° image rotation optical system array 170. It is the center of the 90 ° image rotation optical system 162a when viewed.

[Effects, etc.]
As described above, the semiconductor laser device 100a according to the third modification includes a semiconductor light emitting element array 190 having a plurality of amplification units 121a instead of the plurality of semiconductor light emitting elements 121.

According to such a configuration, the relative positions of the plurality of amplification units 121a do not change as compared with the case of adjusting the positions (optical adjustment) of the plurality of semiconductor light emitting elements 121, so that the optical adjustment becomes simple.

Further, for example, in the semiconductor laser device 100a according to the modification 3, a plurality of 90 ° image rotation optical systems 162a are further provided between the speed axis collimator lens 163 and the wavelength dispersion element 142 at the same pitch as the plurality of amplification units 121a. The 90 ° image rotating optical system array 170 is provided.

Light parallel to each other is emitted from the plurality of amplification units 121a. Therefore, a plurality of 90 ° images in which the 90 ° image rotating optical system array 170 is arranged at the same pitch as the plurality of amplification units 121a, and the fast axis direction and the slow axis direction of the light emitted from the fast axis collimator lens 163 are exchanged. By having the rotating optical system 162a, the light emitted from the plurality of amplification units 121a can be incident on each of the plurality of 90 ° image rotating optical systems 162a with simple adjustment.

(Other embodiments)
The semiconductor laser device according to the embodiment of the present disclosure has been described above based on the embodiment and each modification, but the present disclosure is not limited to these embodiments and each modification. As long as the gist of the present disclosure is not deviated, various modifications that can be conceived by those skilled in the art are applied to each embodiment, or a form constructed by combining components in different embodiments is also a form of one or more embodiments. It may be included in the range.

The semiconductor laser apparatus of the present disclosure is used, for example, as a light source of a processing apparatus used for laser processing.

100, 100a Semiconductor laser device 110 Base 111 Main surface 120, 120a, 120b, 120c Semiconductor element unit 121 Semiconductor light emitting element (amplification unit)
121a Amplification part 122 Submount 123, 123a First base block 124 Insulation sheet 125, 125a, 125b Second base block 126, 126a, 126b Projection part 127 Mounting surface 128, 148 Inclined part 128a Flat part 130 Coupled optical system 140 Wave part 141 Base 142 Wavelength dispersion element 143 Pressing part 145 Convex part 150 Partial reflection mirror 160 Optical unit 161 Optical holder 162, 162a 90 ° image rotating optical system 163 Speed axis collimeter lens 170 90 ° image rotating optical system Array 190 Semiconductor light emission Element Array 200, 201, 202, 203 Hole 210, 211 Screw 212 Adjusting Screw 220, 220a, 220b Adhesive 300 Optical Spot 310 Laser Light 320 Reflected Light 330 Light Emitting Point 400 External Resonator 500, 500a, 500b Base 600 Optical Axis

Claims (7)

Multiple amplification units that emit light,
A fast-axis collimator lens that collimates the speed-axis directions of light emitted from each of the plurality of amplification units to emit a plurality of lights, and transmits or reflects a plurality of lights emitted from the fast-axis collimator lens. An external surface having a wavelength dispersion element that emits the plurality of lights so as to pass through one optical path, and a partial reflection mirror that transmits a part of the light emitted from the wavelength dispersion element and reflects the other part. With a resonator
A base portion that supports the speed axis collimator lens and the plurality of amplification portions,
A plurality of adhesives for fixing the speed axis collimator lens to the base portion, and
The plurality of lights emitted from the speed axis collimator lens are superimposed on the wavelength dispersion element.
A semiconductor laser device in which the plurality of adhesives are arranged symmetrically with respect to the speed axis collimator lens. The semiconductor laser device according to claim 1, wherein the plurality of adhesives are arranged symmetrically with respect to the speed axis collimator lens in a direction parallel to the slow axis direction of the light emitted from the amplification unit. The semiconductor laser apparatus according to claim 1 or 2, wherein the plurality of adhesives are arranged symmetrically with respect to the speed axis collimator lens in a direction parallel to the speed axis direction of light emitted from the amplification unit. .. The plurality of adhesives are arranged symmetrically with respect to the speed axis collimator lens when viewed from a direction perpendicular to the optical axis of the speed axis collimator lens, according to any one of claims 1 to 3. The semiconductor laser device described. Further, an optical holder for supporting the speed axis collimator lens together with the base is provided.
The semiconductor laser device according to any one of claims 1 to 4, wherein the adhesive fixes the speed axis collimator lens to the base portion by adhering the optical holder and the base portion. The external resonator further includes a coupled optical system that is arranged between the speed axis collimator lens and the wavelength dispersion element and superimposes a plurality of lights emitted from the speed axis collimator lens on the wavelength dispersion element. The semiconductor laser apparatus according to any one of claims 1 to 5. The external cavity further includes any one of claims 1 to 6 including a 90 ° image rotating optical system that exchanges the speed axis direction and the slow axis direction of the plurality of lights emitted from the speed axis collimator lens. The semiconductor laser apparatus according to the section.

Images