JP7431553B2 - semiconductor laser equipment - Google Patents

Description

The present disclosure relates to a semiconductor laser device.

Conventionally, there is a semiconductor laser device that includes a semiconductor laser element that emits laser light and an optical member such as a lens that controls the distribution of the laser light (for example, see Patent Document 1).

The semiconductor laser device disclosed in Patent Document 1 includes a semiconductor laser array that emits laser light, a condensing lens, and a heat sink. The condensing lens and lens holder are bonded to the heat sink.

Japanese Patent Application Publication No. 2002-232064 Japanese Patent Application Publication No. 2000-137139

When light is emitted from a light source such as a semiconductor laser array, the light source generates heat. Further, the light source and the base on which the light source is placed expand due to the heat generated by the light source. As a result, when light is emitted from the light source, the position of the light passing through an optical system such as a condenser lens deviates from a desired position. Therefore, depending on the amount of light emitted from the light source, in other words, depending on the amount of power input to the light source in order to emit light from the light source, the optical axis of the light (for example, laser light) emitted from the semiconductor laser device There is a problem that the position may shift from the desired position.

The present disclosure provides a semiconductor laser device in which the optical axis of emitted laser light is prevented from shifting from a desired position.

A semiconductor laser device according to one aspect of the present disclosure includes: a light source that emits laser light; a base having a main surface on which the light source is placed; and a back surface facing away from the main surface; an optical system that is supported and through which the laser light emitted by the light source passes, and the distance between the support position for supporting the optical system on the base and the back surface is less than the distance between the main surface and the back surface. It's also big.

According to the semiconductor laser device according to one aspect of the present disclosure, the optical axis of emitted laser light is suppressed from shifting from a desired position.

FIG. 1 is a diagram showing a schematic configuration of a semiconductor laser device according to an embodiment. FIG. 2 is a perspective view showing a light source module included in the semiconductor laser device according to the embodiment. FIG. 3 is an exploded perspective view showing a light source module included in the semiconductor laser device according to the embodiment. FIG. 4 is an exploded perspective view showing a light source module included in the semiconductor laser device according to the embodiment. FIG. 5 is an enlarged partial cross-sectional view of a part of the light source module included in the semiconductor laser device according to the embodiment, taken along line VV in FIG. 3. FIG.

Embodiments of the present disclosure will be described in detail below with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. The numerical values, shapes, materials, components, arrangement positions and connection forms of the components, steps, order of steps, etc. shown in the following embodiments are examples, and do not limit the present disclosure. The disclosure is limited only by the claims.

Note that each figure is a schematic diagram and is not necessarily strictly illustrated. Therefore, for example, the scale etc. of each figure do not necessarily match. Further, in each figure, substantially the same configurations are denoted by the same reference numerals, and redundant explanations of the substantially same configurations may be omitted or simplified.

Furthermore, in the following embodiments, the terms "upper" and "lower" do not refer to the upper direction (vertically upward) and the downward direction (vertically downward) in absolute spatial recognition. Additionally, the terms "above" and "below" are used not only when two components are spaced apart and there is another component between them; This also applies when two components are placed in close contact with each other.

Furthermore, in this specification and the drawings, the X-axis, Y-axis, and Z-axis indicate three axes of a three-dimensional orthogonal coordinate system. In each embodiment, the Z-axis direction is the vertical direction, and the direction perpendicular to the Z-axis (direction parallel to the XY plane) is the horizontal direction. Furthermore, in the embodiments described below, the Z-axis positive direction may be described as upward, and the Z-axis negative direction may be described as downward. In the embodiment described below, the light source will be described as emitting light in the positive direction of the Y-axis. In the embodiments described below, the Y-axis positive direction side may be referred to as the light exit side.

In the embodiments described below, "top view" refers to a view from the normal direction of the principal surface of the base on which the light source is placed.

(Embodiment)
[overview]
FIG. 1 is a diagram showing a schematic configuration of a semiconductor laser device 100 according to the first embodiment.

The semiconductor laser device 100 is a laser device that emits laser light. The semiconductor laser device 100 is used, for example, as a light source of processing equipment that processes a target object with a laser beam.

The semiconductor laser device 100 includes a light source module 200, a slow axis collimator lens 160, a condenser lens 210, a wavelength dispersion element 140, a half mirror 150, a condenser lens 211, and an optical fiber 220.

The light source module 200 is a light source that emits light (emitted light 300). In this embodiment, the light source module 200 includes a light source 110 that is a semiconductor light emitting element array having a plurality of amplification sections 111 each of which emits emitted light 300. The emitted light 300 is, for example, a laser beam.

The light source module 200 also includes an optical system 130 through which the emitted light 300 emitted by the light source 110 passes.

The output light 300 output from the optical system 130 is collimated in the slow axis direction by a slow axis collimator lens (SAC/Slow Axis Collimator Lens) 160, and is input to the condenser lens 210.

The condensing lens 210 is a fast axis collimator lens (FAC/Fast Axis Collimator Lens) that collimates the fast axis direction of the incident output light 300. The condensing lens 210 collimates the fast-axis direction of the incident output light 300 and makes the collimated output light 300 enter the wavelength dispersion element 140 . In this embodiment, the light source 110 emits the emitted light 300 so that the Z-axis direction is the fast-axis direction and the X-axis direction is the slow-axis direction.

The wavelength dispersion element 140 receives the output light 300 emitted from each of the plurality of amplification sections 111 and outputs the output light 300 emitted from each of the plurality of amplification sections 111 so as to pass through one optical path. It is an optical element. That is, the wavelength dispersion element 140 is a multiplexer that multiplexes the output light 300 output from each of the plurality of amplification sections 111. For example, a diffraction grating is formed on the surface of the wavelength dispersion element 140 on which the emitted light 300 is incident. For example, the output light 300 output from each of the plurality of amplification units 111 is incident on a diffraction grating formed on the surface of the wavelength dispersion element 140, so that the output light 300 is transmitted from the wavelength dispersion element 140 so as to pass through one optical path. It is emitted. The light emitted from the wavelength dispersion element 140 so as to pass through one optical path is incident on the half mirror 150. The wavelength dispersion element 140 may be a transmissive type wavelength dispersion element that transmits and multiplexes a plurality of emitted lights 300, or may be a reflective type wavelength dispersion element that reflects and multiplexes a plurality of emitted lights 300.

The half mirror 150 is a half mirror that transmits a part of the emitted light 300 emitted by the light source 110 and reflects the other part, thereby causing the emitted light 300 to resonate with the light source 110. The reflected light 310 reflected by the half mirror 150 returns to the light source 110, and is further reflected by the light source 110 (specifically, the surface facing the light output surface of the emitted light 300 in the light source 110), and returns to the half mirror 150. Return to A portion of the reflected light 310 that has returned to the half mirror 150 is further reflected and returns to the light source 110. As a result, light resonance occurs between the light source 110 and the half mirror 150. Thereby, the semiconductor laser device 100 emits laser light 320. In this way, the semiconductor laser device 100 is an external cavity type semiconductor laser device in which the emitted light 300 resonates between the light source 110 and the half mirror 150. A laser beam 320 generated by an external resonator formed by the light source 110 and the half mirror 150 is emitted from the half mirror 150 . Laser light 320 emitted from half mirror 150 is incident on condensing lens 211 .

Note that the semiconductor laser device 100 may not include an external resonator (more specifically, the half mirror 150) and may include the light source 110 that emits laser light by itself.

The condensing lens 211 is a coupling lens for inputting the laser beam 320 into the optical fiber 220. Laser light 320 emitted from condensing lens 211 enters one end of optical fiber 220 and is emitted from the other end of optical fiber 220 .

[Light source module]
Next, the configuration of the light source module 200 will be described in detail.

FIG. 2 is a perspective view showing a light source module 200 included in the semiconductor laser device 100 according to the embodiment. FIG. 3 is an exploded perspective view showing the light source module 200 included in the semiconductor laser device 100 according to the embodiment. FIG. 4 is an exploded perspective view showing the light source module 200 included in the semiconductor laser device 100 according to the embodiment.

Note that FIG. 3 shows a state in which the optical system 130 is attached to the base (lower base) 122. On the other hand, FIG. 4 shows a state in which the optical system 130 is not attached to the base.

The light source module 200 is a module that emits emitted light 300.

The light source module 200 includes a light source 110, a submount 230, a base 122, an insulating sheet 260, an upper base 121, a screw 190, a heat sink 250, and an optical system 130.

The light source 110 is a light source that emits emitted light 300. Note that the wavelength of the emitted light 300 emitted by the light source 110 may be arbitrarily set. In this embodiment, light source 110 emits blue light. Blue light is, for example, light with a center wavelength of 430 nm or more and 470 nm or less. The light source 110 constitutes an external resonator together with the half mirror 150. As a result, laser light is emitted from the light source 110 as emitted light 300.

In this embodiment, light source 110 is a semiconductor light emitting element array that has three amplification sections 111 and emits output light 300 from each amplification section.

Note that the light source 110 may be a semiconductor laser element that emits laser light by itself. In this case, the semiconductor laser device 100 does not need to include components such as the half mirror 150 for configuring an external resonator. Moreover, the light source module 200 may be provided with one light source that emits the emitted light 300 from one location, in other words, has one amplification section 111, or may be provided with a plurality of light sources. Further, the number of amplifying sections 111 included in the light source 110 may be one or more, three or more, or two.

Note that the material used for the light source 110 is not particularly limited. The light source 110 is, for example, a gallium nitride-based semiconductor element.

The light source 110 emits light 300 by being supplied with power from an external commercial power source (not shown) or the like.

In this embodiment, light source 110 is mounted on base 122 via submount 230.

The submount 230 is a member on which the light source 110 is placed and placed on the base 122. The submount 230 plays a role in improving heat dissipation of the light source 110. Furthermore, the submount 230 prevents the light source 110 from being destroyed due to the difference in thermal expansion coefficient between the light source 110 and the base 122. The material used for the submount 230 is not particularly limited. The material used for the submount 230 is, for example, a ceramic material.

The base 122 is a base on which the light source 110 is placed on the main surface 123 (upper surface). In this embodiment, the portion of the main surface 123 of the base 122 on which the light source 110 is placed is lower than other portions, that is, located below the other portions. The light source 110 is supported by the base 122 so as to be sandwiched between the upper base 121 and the base 122.

Note that the light source 110 and the upper base 121 may or may not be in contact with each other.

Furthermore, the materials used for the upper base 121 and the base 122 are not particularly limited. The material used for the upper base 121 and the base 122 may be, for example, a metal material, a resin material, or a ceramic material.

Furthermore, the shapes of the upper base 121 and the base 122 are not particularly limited.

The upper base 121 and the base 122 are fixed to each other by, for example, fitting a screw 190 into a hole 191 formed in the base 122. Specifically, the base 122 is provided with a hole 191. Further, the upper base 121 is provided with a through hole at a position corresponding to the hole 191. A screw 190 is arranged in the through hole. The screw 190 is threaded into the hole 191.

Thereby, the upper base 121 and the base 122 are fixed.

The base 122 has a main body part 243 and an arm part 240. Specifically, the base 122 includes a main body portion 243 having a main surface 123 and a back surface 124 that is a surface opposite to the main surface 123. The base 122 also has an arm portion 240 extending in the direction in which the emitted light 300 emitted by the light source 110 is emitted.

Arm portion 240 is a part of base 122 for supporting optical system 130. The arm section 240 extends in the normal direction of the main surface 123 of the base 122 (more specifically, the main body section 243), and further extends in the direction of emission of the emitted light 300 of the light source 110. It is L-shaped when viewed from the direction.

Furthermore, the arm portions 240 are arranged on both sides of the light source 110 in a direction perpendicular to the optical axis direction (in this embodiment, the Y-axis direction) of the emitted light 300 when viewed from above. The arm portion 240 is connected to the optical system 130 at an end 241 opposite to one end connected to the main surface 123. For example, the arm portion 240 is bonded to the optical system 130 at an end portion 241 using an adhesive such as resin or solder. The optical system 130 may be fixed to the arm portion 240 with a screw or the like.

The insulating sheet 260 is a sheet that electrically insulates the upper base 121 and the base 122. The insulating sheet 260 may be made of any material as long as it has electrical insulation properties. Furthermore, through holes are formed in the insulating sheet 260 according to the positions of the holes 191.

The optical system 130 is an optical member through which the emitted light 300 emitted from the light source 110 passes. The optical system 130 is, for example, a member that controls the light distribution of the emitted light 300 emitted by the light source 110.

The optical system 130 includes a fast-axis collimator lens 132, a 90° image rotation optical system 133, and a tab 131.

The fast-axis collimator lens 132 is a collimator lens that collimates the fast-axis direction of the emitted light 300 emitted by the light source 110. In this embodiment, two lenses, the fast-axis collimator lens 132 and the condenser lens 210, are used to collimate the fast-axis direction of the emitted light 300. Note that the semiconductor laser device 100 does not need to include the condenser lens 210.

The 90° image rotation optical system 133 is an optical member that switches the fast axis direction and the slow axis direction of the emitted light 300 emitted by the light source 110. Specifically, the 90° image rotation optical system 133 is a 90° image rotation optical system (BT/Beam Twister).

As described above, the optical system 130 includes the fast-axis collimator lens 132 that collimates the fast-axis direction of the output light 300, and the output light 300 collimated by the fast-axis collimator lens 132 at an angle of 90° around the optical axis of the output light 300. It includes a BTU (Beam Twisted Lens Unit) having a 90° image rotation optical system. For example, an example of the BTU is an optical light flux converter disclosed in Japanese Patent Laid-Open No. 2000-137139.

For example, the fast-axis collimator lens 132 and the 90° image rotation optical system 133 are integrally formed of transparent glass, resin, or the like.

Note that in this embodiment, the semiconductor laser device 100 includes one BTU as the optical system 130, but the shape, number, etc. of the optical system 130 that the semiconductor laser device 100 includes are not particularly limited.

The tab 131 is a support member for supporting the BTU (fast axis collimator lens 132 and 90° image rotation optical system 133) on the base 122. Specifically, the tab 131 and the arm portion 240 of the base 122 are bonded together using an adhesive or the like.

The material used for tab 131 is not particularly limited. The material used for the tab 131 may be, for example, metal, resin, or glass.

Note that the tab 131 and the BTU may be integrally formed.

The heat sink 250 is a table on which the base 122 is placed and is used to radiate heat from the base 122. The material used for the heat sink 250 is not particularly limited. The material used for the heat sink 250 may be, for example, metal or ceramic. Further, the heat sink 250 may be provided with a flow path for passing a liquid such as water. By flowing a liquid such as water through the flow path, the heat dissipation performance of the heat sink 250 can be improved.

[Optical system arrangement]
Next, the positional relationship between the optical system 130 and the light source 110 in the semiconductor laser device 100 will be explained.

FIG. 5 is an enlarged partial cross-sectional view of a part of the light source module 200 included in the semiconductor laser device 100 according to the embodiment, taken along the line VV in FIG.

As described above, the optical system 130 is supported by the base 122.

Here, the distance L1 between the support position for supporting the optical system 130 on the base 122 and the back surface 124 facing away from the main surface 123 on the base 122 is the distance L2 between the main surface 123 and the back surface 124 (in other words, The thickness of the base 122 (more specifically, the thickness of the main body 243). In this embodiment, the support position is the end portion 241 of the arm portion 240. More specifically, the support position is the lower surface 242 of the arm portion 240. The optical system 130 is bonded to the end 241 of the arm portion 240 using an adhesive, for example. Alternatively, the optical system 130 is bonded to the lower surface 242 of the arm portion 240 using an adhesive, for example.

As described above, in this embodiment, the base 122 (more specifically, the arm portion 240 that the base 122 has) is attached to the upper surface 134 of the optical system 130 (in this embodiment, the tab 131) at the support position. (upper surface) to support the optical system 130.

By causing the light source 110 to emit the emitted light 300, that is, by supplying power to the light source 110, the light source 110 emits heat. As a result, the light source 110 and the base 122 expand due to the heat generated by the light source 110. Due to the expansion of the light source 110 and the base 122, the distance L1 increases, and the light emission position 112 of the light source 110 is moved in the Z-axis direction with respect to the main surface 123.

Further, due to the expansion of the base 122, the distance L2 increases. Further, the optical system 130 expands slightly at a smaller expansion rate than that of the light source 110 and the base 122.

In a conventional semiconductor laser device, for example, the optical system 130 is supported by the base 122 below the light source 110. In other words, in the conventional semiconductor laser device 100, the distance L2 is larger than the distance L1. Therefore, when the base 122 and the light source 110 expand, the distance L2 increases more than the distance L1. Furthermore, due to the expansion of the light source 110, the light emitting position 112 of the light source 110 moves in a direction away from the main surface 123 with respect to the main surface 123. Therefore, the light emitted from the semiconductor laser device 100 depends on the amount of light 300 emitted from the light source 110, in other words, the amount of power input to the light source 110 in order to emit the light 300 from the light source 110. There is a problem in that the optical axis of the laser beam 320 deviates from the desired position (in other words, it is tilted).

Here, in the semiconductor laser device 100 according to the present embodiment, the supporting position of the optical system 130 is from the back surface 124 (more specifically, from the heat sink 250 disposed in contact with the back surface 124) to the main surface 123. is seperated. Therefore, due to the expansion of the base 122, the distance L1 increases more than the distance L2. Furthermore, due to the expansion of the light source 110, the light emission position 112 of the light source 110 moves in a direction away from the main surface 123 (in the present embodiment, in the positive Z-axis direction). Further, the optical system 130 expands slightly with a small expansion coefficient relative to the expansion coefficient of the light source 110 and the base 122, so that when viewed from the light output side (in other words, the side where the output light 300 is incident) (or, in this embodiment, when viewed from the XZ plane), the position of the fast axis collimator lens 132 at the center position moves slightly in the negative Z-axis direction with respect to the support position. In other words, the distance L3 is increased.

As described above, since the distance L2 is larger than the distance L1 before the light source 110, the base 122, and the optical system 130 expand, the light source 110, the base 122, and the optical system 130 expand. However, for example, by selecting a material with an appropriate coefficient of thermal expansion etc. for the base 122, the sum of the amount of increase in the distance L2 and the amount of change in the light emission position 112 of the light source 110 with respect to the main surface 123 can be calculated as the distance The difference between the amount of increase in L1 and the amount of change in distance L3 can be approximated. Moreover, since there is a degree of freedom in designing the distance L1, it is possible to check the movement of the actual object and set the distance L1 to a dimension such that the above-mentioned difference becomes zero.

Therefore, according to the semiconductor laser device 100, the amount of light emitted from the light source 110 is more responsive than the conventional semiconductor laser device, in other words, the amount of power input to the light source 110 is more responsive than the conventional semiconductor laser device. Therefore, it is possible to suppress the optical axis of the light (laser light 320) emitted from the semiconductor laser device 100 from being shifted from the desired position (in other words, tilting).

[Effects etc.]
As described above, the semiconductor laser device 100 according to the embodiment includes a light source 110 that emits laser light (emitted light 300), a main surface 123 on which the light source 110 is placed, and a main surface 123 located behind the main surface 123. The optical system 130 is supported by the base 122 and through which the emitted light 300 emitted from the light source 110 is transmitted. A distance L1 between the supporting position of the optical system 130 on the base 122 and the back surface 124 is larger than a distance L2 between the main surface 123 and the back surface 124.

The light source 110 emits laser light or light externally resonated with a half mirror as the emitted light 300. The spread angle of the light amplified by the light source 110 is different in the fast axis direction and the slow axis direction. Since the light spread angle in the fast axis direction of the output light 300 emitted from the light source 110 is larger than that in the slow axis direction, for example, an optical system 130 (more specifically, a fast axis collimator lens 132) is installed near the light source 110. is placed. Further, the light source 110 and the optical system 130 are fixed to the same member (base 122 in this embodiment) in order to fix their mutual positional relationship. Conventionally, even if the light source 110 and the optical system 130 are fixed to the same member, their relative positions change as the light source 110 generates heat and the light source 110, the optical system 130, and the member expand thermally. There's a problem. Therefore, like the semiconductor laser device 100, the distance L2 is larger than the distance L1 before the light source 110, the base 122, and the optical system 130 are expanded, so that the light source 110, the base 122, and the optical system Even if the system 130 expands, the difference between the sum of the amount of increase in the distance L2 and the amount of change in the light emission position 112 of the light source 110 with respect to the main surface 123, and the difference between the amount of increase in the distance L1 and the amount of change in the distance L3 can be made smaller. Therefore, according to the semiconductor laser device 100, the amount of light emitted from the light source 110 is more responsive than the conventional semiconductor laser device, in other words, the amount of power input to the light source 110 is more responsive than the conventional semiconductor laser device. Therefore, it is possible to suppress the optical axis of the light (emitted light 300 and laser light 320) emitted from the semiconductor laser device 100 from shifting from a desired position.

Further, for example, the base 122 supports the optical system 130 by contacting the upper surface 134 of the optical system 130 at the support position.

According to this, it is possible to reduce the difference between the distance L1 and the sum of the amount of increase in the distance L2 and the amount of change in the light emission position 112 of the light source 110 with respect to the main surface 123 due to thermal expansion of the base 122. Therefore, according to such a configuration, the optical axis of the emitted light 300 emitted by the semiconductor laser device 100 is further prevented from being deviated from the desired position.

Furthermore, for example, the base 122 includes an arm portion 240 that extends in the direction in which the emitted light 300 emitted by the light source 110 is emitted. In this case, the supporting position of the optical system 130 on the base 122 is the end portion 241 of the arm portion 240. More specifically, the supporting position of the optical system 130 on the base 122 is the longitudinal end 241 of the arm section 240.

According to this, the optical system 130 can be supported by the arm part 240 on the base 122 regardless of the shape of the part of the base 122 (main body part 243) on which the light source 110 is placed.

Further, for example, the arm portion 240 extends in the normal direction of the principal surface 123, and further, the end portion 241 extends in the emission direction of the emitted light 300 emitted from the light source 110. In this case, for example, the supporting position is the lower surface 242 of the end portion 241.

According to this, thermal expansion of the base 122 causes the center position of the optical system 130 (for example, the position of the fast axis collimator lens 132 when viewed from the side where the output light 300 is incident) to the lower surface 242, which is the supporting position. It moves slightly in the negative direction of the Z-axis. Therefore, the difference between the distance L1 and the sum of the amount of increase in the distance L2 and the amount of change in the light emission position 112 of the light source 110 with respect to the main surface 123 due to thermal expansion of the base 122 can be reduced. According to this configuration, the optical axis of the emitted light 300 emitted by the semiconductor laser device 100 is further prevented from being deviated from the desired position.

Further, for example, the light source 110 emits blue light.

For example, a semiconductor light source that emits blue light generates more heat relative to the amount of power input to the semiconductor light source than a semiconductor light source that emits red light or near-infrared light. Therefore, by employing the light source 110 (semiconductor light source) that emits blue light in the semiconductor laser device 100, it is effectively suppressed that the optical axis of the emitted light 300 emitted by the semiconductor laser device 100 deviates from the desired position. can.

For example, the optical system 130 includes a fast-axis collimator lens 132 that collimates the fast-axis direction of the emitted light 300 emitted by the light source 110.

According to this, the spread of the emitted light 300 emitted by the light source 110 in the fast axis direction is suppressed.

For example, the optical system 130 includes a 90° image rotation optical system 133 that switches the fast axis direction and the slow axis direction of the emitted light 300 emitted by the light source 110.

According to this, for example, the fast axis direction of the emitted light 300 emitted from the light source 110 can be changed from the normal direction of the main surface 123 to a direction perpendicular to the normal direction and the optical axis of the emitted light 300. Therefore, the degree of freedom in selecting the arrangement, size, and other shapes of the fast-axis collimator lens 132 and the slow-axis collimator lens 160 disposed in the semiconductor laser device 100 can be improved.

For example, the semiconductor laser device 100 further transmits a part of the emitted light 300 emitted by the light source 110 and reflects the other part, thereby transmitting the light (reflected light 310) between the light source 110 and the light source 110. A half mirror 150 that resonates is provided.

According to this, the semiconductor laser device 100 can be adopted as an external cavity type semiconductor laser device composed of the light source 110 and the half mirror 150. Since the semiconductor laser device 100 is an external cavity type semiconductor laser device, for example, a plurality of emitted lights 300 emitted from the light source 110 can be combined and output. Therefore, with such a configuration, the amount of laser light 320 emitted from the semiconductor laser device 100 can be increased.

Further, for example, the light source 110 is a semiconductor light emitting element array having a plurality of amplification sections 111, each of which emits the emitted light 300.

Thereby, for example, by combining the respective emitted lights 300, the amount of laser light 320 emitted from the semiconductor laser device 100 can be increased.

For example, in the semiconductor laser device 100, the emitted light 300 emitted from each of the plurality of amplification sections 111 is incident, and the emitted light 300 emitted from each of the plurality of amplification sections 111 that has entered the semiconductor laser device 100 follows one optical path. A wavelength dispersion element 140 is provided that emits light so as to pass through the wavelength dispersion element 140. That is, the semiconductor laser device 100 includes the wavelength dispersion element 140, which is a multiplexer that multiplexes a plurality of emitted lights 300.

According to this, the amount of laser light 320 emitted from the semiconductor laser device 100 can be increased by combining the respective emitted lights 300 with the wavelength dispersion element 140.

(Other embodiments)
The semiconductor laser device according to the embodiment of the present disclosure has been described above based on the embodiment and each modification example, but the present disclosure is not limited to these embodiments and each modification example. Unless departing from the spirit of the present disclosure, various modifications that can be thought of by those skilled in the art may be made to each embodiment, or a form constructed by combining components of different embodiments may also be applied to one or more aspects. may be included within the range.

For example, the semiconductor laser device may include an electrically insulating insulating sheet between the upper base and the lower base.

The semiconductor laser device of the present disclosure is used, for example, as a light source of a processing device used for laser processing.

100 Semiconductor laser device 110 Light source (semiconductor light emitting element array)
111 Amplification section 112 Light emission position 121 Upper base 122 Base (lower base)
123 Principal surface 124 Back surface 130 Optical system 131 Tab 132 Fast axis collimator lens 133 90° image rotation optical system 134 Top surface 140 Wavelength dispersion element 150 Half mirror 160 Slow axis collimator lens 190 Screw 191 Hole 200 Light source module 210, 211 Condensing lens 220 Optical fiber 230 Submount 240 Arm portion 241 End portion 242 Bottom surface (support position)
243 Main body 250 Heat sink 260 Insulating sheet 300 Emitted light 310 Reflected light 320 Laser light L1, L2, L3 Distance

Claims (8)

a light source that emits laser light;
a base having a main surface on which the light source is placed, and a back surface facing away from the main surface;
an optical system supported by the base and through which the laser light emitted by the light source is transmitted;
A distance between a support position for supporting the optical system on the base and the back surface is greater than a distance between the main surface and the back surface,
The base is
supporting the light source from a first direction side, and supporting the optical system only from a second direction side opposite to the first direction ;
supporting the optical system by contacting the upper surface of the optical system at the support position;
The light source has an arm portion extending in the emission direction of the laser beam emitted,
The support position is an end of the arm part,
The arm portion is arranged in a direction perpendicular to an emission direction of laser light emitted from the light source with respect to the light source when the main surface is viewed from above.
Semiconductor laser equipment. The arm portion extends in the normal direction of the main surface, and further, the end portion extends in the emission direction of the laser beam emitted by the light source,
The semiconductor laser device according to claim 1 , wherein the support position is a lower surface of the end portion. The semiconductor laser device according to claim 1 or 2 , wherein the light source emits blue light. The semiconductor laser device according to claim 1 , wherein the optical system includes a fast-axis collimator lens that collimates the fast-axis direction of the laser light emitted from the light source. 5. The semiconductor laser device according to claim 1 , wherein the optical system includes a 90° image rotation optical system that switches the fast axis direction and the slow axis direction of the laser light emitted by the light source. The device further comprises a half mirror that transmits a part of the laser light emitted by the light source and reflects the other part, thereby resonating the laser light with the light source. The semiconductor laser device described in . 7. The semiconductor laser device according to claim 1, wherein the light source is a semiconductor light emitting element array having a plurality of amplification sections, each of which emits laser light. The invention further includes a wavelength dispersion element into which the laser light emitted from each of the plurality of amplification sections is incident, and which emits the laser light so that the laser light emitted from each of the plurality of amplification sections passes through one optical path. 8. The semiconductor laser device according to item 7 .

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