JPS583281A - Photovoltaic type semiconductor device - Google Patents
Photovoltaic type semiconductor deviceInfo
- Publication number
- JPS583281A JPS583281A JP56101569A JP10156981A JPS583281A JP S583281 A JPS583281 A JP S583281A JP 56101569 A JP56101569 A JP 56101569A JP 10156981 A JP10156981 A JP 10156981A JP S583281 A JPS583281 A JP S583281A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light guide
- optical
- driven semiconductor
- optically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 51
- 230000008878 coupling Effects 0.000 claims abstract description 8
- 238000010168 coupling process Methods 0.000 claims abstract description 8
- 238000005859 coupling reaction Methods 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 abstract description 15
- 239000012212 insulator Substances 0.000 abstract description 15
- 230000008054 signal transmission Effects 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract description 3
- 229920002379 silicone rubber Polymers 0.000 abstract description 2
- 239000004945 silicone rubber Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 37
- 239000002184 metal Substances 0.000 description 37
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000834 fixative Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010009696 Clumsiness Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4248—Feed-through connections for the hermetical passage of fibres through a package wall
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
Abstract
Description
【発明の詳細な説明】
本発明は、組立て製作の容易化と信頼性の向上を図った
光駆動形半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optically driven semiconductor device that is easy to assemble and has improved reliability.
光サイリスタ等に代表される光駆動形半導体装置は、そ
の主回路と制御回路との間の電気絶縁構成が容易である
、制御回路から混入する外米雑音に起因する誤動作がな
い、小塵化が容易で、安価で信頼性の高い装置が実現で
きる等の優れた特徴を有している。そして、これらの特
徴を活かして、直流送電用サイリスクバルブを始めとす
る各種超高電圧電力変換装置への応用が注目されている
。Optically driven semiconductor devices, such as optical thyristors, have easy electrical insulation between the main circuit and the control circuit, do not malfunction due to foreign noise coming from the control circuit, and are dust-free. It has excellent features such as being easy to use, making it possible to realize an inexpensive and highly reliable device. Taking advantage of these characteristics, application to various ultra-high voltage power conversion devices, including silisk valves for DC power transmission, is attracting attention.
さて1直流送電用サイリスタパルプ等の超高電圧変換装
置では、光サイリスタを100個以上も直列に接続し、
100〜500 kVにも及ぶ超高電圧の電力変換が行
われる。この為、第1図に示すように数個の光サイリス
タ1m、Ib。Now, in ultra-high voltage conversion devices such as thyristor pulp for DC power transmission, more than 100 optical thyristors are connected in series.
Power conversion is performed at ultra-high voltages ranging from 100 to 500 kV. For this purpose, several optical thyristors 1m and Ib are installed as shown in FIG.
ICを冷却フィン1m、2b、:lc、2dを介して直
列に接続し、これを1つのモジ、−ルとして一体化した
ものを複数個直列接続して上記すイリスタパルプを構成
している。この場合、各党サイリスタJa、Jb、Jc
には、発光ダイオード等の光源31.Jb、jcからの
信号光がライトガイド4m、4b、4aを介して数メー
トル以上伝送される。そしてこれらの光信号は上記光サ
イリスタ1m、1b、ICの外囲器にそれぞれ設けられ
た光4m号導入窓5m。ICs are connected in series via cooling fins 1m, 2b, lc, 2d, and a plurality of ICs are integrated into one module, and a plurality of ICs are connected in series to form the above-mentioned Iristor pulp. In this case, each party's thyristors Ja, Jb, Jc
includes a light source 31. such as a light emitting diode. Signal lights from Jb and jc are transmitted over several meters via light guides 4m, 4b, and 4a. These optical signals are transmitted to the optical thyristors 1m, 1b and the optical No. 4m introduction window 5m provided in the IC envelope, respectively.
5b、5cを介して上記各党サイリスタ1−9lb、1
@の受光向にそれぞれ与えられる。Thyristors 1-9lb, 1 for each party above through 5b, 5c
It is given to each light receiving direction of @.
とζろで、このような光サイリスタモノニールt−m成
する九サイリスタは、従来一般に第2図に示すように構
成される。In the past, nine thyristors comprising such an optical thyristor monoyl t-m are generally constructed as shown in FIG.
光サイリスタ本体11は、一方の面を金属板12を介し
て7ノード電極JIK接続すると共に、他方の面を金M
腰14を介してカソード亀−15に接続している。仁の
金ll4jll1114の中央部には光トリガ信号を入
力する窓が設けられて、受光面16が形成されておシ、
上記カソード電極15に設けられた$ 15 mを介し
て上記光トリガ信号を導くライトガイド17が上記受光
向16にその一端を光結合すぺ〈配設されている。The optical thyristor main body 11 has one surface connected to seven node electrodes via a metal plate 12, and the other surface connected to a gold M
It is connected to the cathode turtle 15 via the waist 14. A window for inputting an optical trigger signal is provided in the center of the gold plate ll4jll1114, and a light receiving surface 16 is formed.
A light guide 17 that guides the optical trigger signal through a wire provided on the cathode electrode 15 is disposed in the light receiving direction 16 with one end thereof optically coupled.
このライトガイド11は、その一端をシリコンゴム等の
接着剤18を用いて前記受光[J6に光結合して同定さ
れる。そして、この光サイリスタ本体11は、セラミッ
ク製の円筒状絶縁体I9内部に収納され、絶縁体190
両端部に設けられた金属板20a、jObを介して前記
電極13.15にそれぞれ接合され、気密封止されるよ
うになっている。つまp光サイリスタ本体11は、これ
らの各部品要素によって構成される外囲器の内部に気密
封止して設けられた構造とX&りている。尚、光ナイリ
スタ本体11は、アノード電極11儒よシ、Pエミッタ
半導体層JJa、Nペース半導体層11b、?−4−ス
半導体層11@、Nエミッタ牛導体層114からなるも
ので、前記金属膜14は、アル電ニウムをマスクを用い
て上記N工(、夕牛導体層JJd上に蒸着する等して形
成されるもので、また金属板12は光サイリスタ本体1
1を構成するシリコンの熱膨張係数に近い、例えばタン
グステンからなる%0である。一方、前記ライトガイド
1rの他端は金属筒11に挿通されて低融点t9ス等の
固定剤21により上記金属筒21に気密に固定され、更
にこの金属筒21紘外囲器のm面、つtb筒状絶縁体1
#の壁面を貫通し、この11面に気1111c固定され
ている。そして、この11面に固定された金属筒21の
外側突出端には、前記ライトガイド4の一端部をネジ止
め固定する固定部材21が設けられ、これによりてライ
トガイド4と前記2イトガイド11とが相互に対向して
光学的に結合されゐようK ’&−pている。即ち、ツ
イトガイPJFO倫端部、金属筒11、固定部材21に
よりて光信号導入窓5逅形成されている。This light guide 11 is identified by optically coupling its one end to the light receiving section [J6] using an adhesive 18 such as silicone rubber. The optical thyristor main body 11 is housed inside a cylindrical insulator I9 made of ceramic, and an insulator 190
They are connected to the electrodes 13.15 through metal plates 20a and jOb provided at both ends, respectively, and are hermetically sealed. The optical thyristor main body 11 has a structure that is hermetically sealed inside an envelope constituted by each of these components. Incidentally, the optical Nyristor body 11 includes an anode electrode 11, a P emitter semiconductor layer JJa, an N base semiconductor layer 11b, ? -4- The metal film 14 consists of an N emitter conductor layer 114 and an N emitter conductor layer 114, and the metal film 14 is formed by depositing aluminum on the N conductor layer JJd using a mask. The metal plate 12 is formed by the optical thyristor main body 1.
%0, which is close to the coefficient of thermal expansion of silicon constituting 1, for example, tungsten. On the other hand, the other end of the light guide 1r is inserted into the metal cylinder 11 and airtightly fixed to the metal cylinder 21 with a fixing agent 21 such as low melting point T9, and furthermore, the m-plane of the metal cylinder 21, TTB cylindrical insulator 1
It penetrates the # wall surface and is fixed to this 11th surface by air 1111c. A fixing member 21 for fixing one end of the light guide 4 with a screw is provided at the outer protruding end of the metal cylinder 21 fixed to the 11th surface, thereby allowing the light guide 4 and the two light guides 11 to be fixed together. K'&-p are opposed to each other and optically coupled. That is, the optical signal introduction window 5 is formed by the end portion of the PJFO tube, the metal tube 11, and the fixing member 21.
ところが、ζOような構造の光ナイリスタ社、次のよう
な手順によりて製作される為、以下に示す如き欠点を有
していた。即ち、光ナイリスタ本体11のPエミッタ層
11畠の表面と金属板11とをアルにニウム箔を介して
含金化固定したのち、上記金属板12をアノード電極1
1に半田付は固定する。 F−0段階で、絶縁体円筒1
9は、アノード電極JjK金属@JObを介して気密に
固定する0次に、予め筒状絶縁体1#に同定された金属
筒21にライトガイド11を神通し、またライトガイド
11〇一端を受光部16に合わせて、固定剤1−により
wi定し、同時に上記ライトガイド11と金属筒21と
を固定剤21を用いて気密に固定する。しかるのち、ラ
イトガイドJFK接触しないように溝部111を合わせ
てカソード電極IJを金属板14に接合し、またカソー
ド電極15を金属板j01を介して筒状絶縁体19に気
密封止して固定することにより、光サイリスタが製作さ
れる。However, since the ζO-like structure manufactured by Hikari Nyristor Co., Ltd. was manufactured using the following procedure, it had the following drawbacks. That is, after fixing the surface of the P emitter layer 11 of the optical Nyristor main body 11 and the metal plate 11 to aluminum via a nium foil, the metal plate 12 is attached to the anode electrode 1.
Fix the soldering to 1. At the F-0 stage, insulator cylinder 1
9, the light guide 11 is airtightly fixed via the anode electrode JjK metal @JOb, and then the light guide 11 is passed through the metal cylinder 21 identified in advance as the cylindrical insulator 1#, and one end of the light guide 110 is The light guide 11 and the metal tube 21 are fixed in accordance with the light receiving part 16 with the fixing agent 1-, and at the same time, the light guide 11 and the metal tube 21 are airtightly fixed using the fixing agent 21. Thereafter, the cathode electrode IJ is joined to the metal plate 14 by aligning the groove 111 so as not to contact the light guide JFK, and the cathode electrode 15 is hermetically sealed and fixed to the cylindrical insulator 19 via the metal plate j01. In this way, an optical thyristor is manufactured.
然し乍らこのような製作過程によれば、ライトガイド1
1を受光部ICに固定したのち、低融点ガラス等の固定
剤22を用いて、筒状絶縁体19の内部で上記ライトガ
イド11を金属筒11に気密封止する為、その作業性が
悪いばか9でなく、気密封止部分の信頼性低下の問題を
招いた。しかも、この気密封止は400〜500℃以上
の加熱によって行われるが、ライトガイドZFK与える
光伝送効率の低下等の悪影響も悪食され丸。However, according to this manufacturing process, light guide 1
After fixing the light guide 1 to the light receiving part IC, the light guide 11 is hermetically sealed to the metal tube 11 inside the cylindrical insulator 19 using a fixing agent 22 such as low melting point glass, which has poor workability. Idiot 9 caused the problem of reduced reliability of the hermetically sealed part. Moreover, although this hermetic sealing is performed by heating at 400 to 500° C. or higher, it also has negative effects such as a decrease in light transmission efficiency caused by the light guide ZFK.
本発明はこのような事情を考慮してなされた亀ので、そ
の目的とするとζろは、装置製作時の作業性の改善を図
ると共に、ライトガイドの光信号伝送、効率を十分確保
した上で、その気密性を確保し九信麺性の高い光駆動形
半導体装置を提供することにある。The present invention was created with these circumstances in mind, and its purpose is to improve workability during device manufacturing, and to ensure sufficient optical signal transmission and efficiency of the light guide. The object of the present invention is to provide a light-driven semiconductor device that secures its airtightness and has high quality.
即ち本発明は、光信号導入用O光I#部品を予め外囲器
壁面を貫通して気密封止して設け、内面を光反射処理し
た筒状の結合部品を用いて上記光学部品とライトガイド
とを光結蓄して固定化する構造とすることによシ、上記
ライトガイドの気密封止を不要として、上述した目的を
効果的に達成し九ものである。That is, in the present invention, an O-light I# component for introducing an optical signal is provided in advance by penetrating the wall surface of the envelope and hermetically sealed, and a cylindrical coupling component whose inner surface is treated to reflect light is used to connect the optical component and the light. By adopting a structure in which the light guide is fixed by condensing light, it is possible to eliminate the need for hermetically sealing the light guide and effectively achieve the above-mentioned objects.
以下、図面を参照して本発−の実施例につき説明する。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
尚、実施例装置において、第3図に示す従来装置と同一
部分には同一符号を付し、その説明を省略する。In the apparatus of this embodiment, the same parts as those of the conventional apparatus shown in FIG. 3 are denoted by the same reference numerals, and their explanation will be omitted.
光サイリスタ本体11は、従来装置と同様にしてアノー
ド電極13に固定されて、筒状絶縁体1#に取付けられ
る。この場合、カソード電極III@は、未だ気密側止
されない状態にある。The optical thyristor main body 11 is fixed to the anode electrode 13 and attached to the cylindrical insulator 1# in the same manner as in the conventional device. In this case, the cathode electrode III@ is not yet hermetically sealed.
一方、筒状絶縁体19の壁面には、金属筒(結合部品)
31が上記壁面を貫通して気密に固定されている。仁の
金属筒31は、その内面をクロムメッキする等して光反
射率を著しく高められておシ、上記筒状絶縁体1#への
取付けに先立ってライトガイドJ2を光学部品として恢
合し、低融点、f2ス等の固定剤3Jを用いて゛気密に
固定している。上記ライトガイドJ2は、金属筒11の
一開゛口部側よシ所定の深さまで嵌込まれ九ものであっ
て、他方開口部側に前記ライトガイド11を挿入すべき
空間を形成した状態に設定されている。これによって、
筒状絶縁体1#の壁面は、その孔部に金属筒31、ライ
トガイドJ2を設ゆ、既に気密封止した構造と表9てい
ゐ。On the other hand, on the wall of the cylindrical insulator 19, a metal tube (joint part) is attached.
31 penetrates the wall surface and is fixed airtightly. The inner surface of the metal tube 31 has been plated with chrome to significantly increase its light reflectance, and the light guide J2 is assembled as an optical component before being attached to the cylindrical insulator 1#. It is fixed airtight using a fixing agent such as 3J, low melting point, f2 gas, etc. The light guide J2 is fitted to a predetermined depth from one opening side of the metal tube 11, and a space into which the light guide 11 is inserted is formed on the other opening side. It is set. by this,
Table 9 shows that the wall surface of the cylindrical insulator 1# has a structure in which a metal tube 31 and a light guide J2 are installed in the hole, and the structure is already hermetically sealed.
しかるのち、ライトガイドJFiiその一端を光サイリ
スク本体11の受光部に合せて、その周囲をシリコーン
・がム等の固定剤11を用いて固定すると共に、ライト
ガイド11の他端を上記シリコーンシム等の固定剤34
を塗った前記金属筒alK挿入し、ライトガイドJ2と
の対向距離を調整して固定する。この固定剤18゜14
は光信号に対して透明で、且つライトガイドxr、sx
と略同@度の屈折率を有するもので、これによりて、ラ
イトガイドJ F 、 JJは一体的に固定されること
に&る。尚、このシリコーンシムからなる固定剤11の
同化は、150〜200℃s度の加熱によシ行われる。After that, one end of the light guide JFii is aligned with the light receiving part of the optical silisk main body 11, and its surroundings are fixed using a fixing agent 11 such as silicone, etc., and the other end of the light guide 11 is fixed with the above-mentioned silicone shim or the like. Fixative 34
Insert the coated metal tube alK, adjust the facing distance with the light guide J2, and fix it. This fixative 18°14
are transparent to the optical signal, and the light guides xr, sx
The light guides J F and JJ are fixed integrally. The fixative 11 made of silicone shim is assimilated by heating at 150 to 200 degrees Celsius.
その後、光サイリスク本体11にカソード電極IJを取
付け、筒状絶縁体1#に気密封止して本装置が完成され
る。Thereafter, the cathode electrode IJ is attached to the optical cyrisk main body 11 and hermetically sealed to the cylindrical insulator 1#, thereby completing the present device.
このように本装置の構造によれば、従来のようにライト
ガイド11を金属筒JJtC気密封止して固定する必要
がない、つtb本構造によれば、光導入窓5部分社、既
にライトガイド(光学部品)32、金属筒J1、そして
固定剤SXによって気密封止され九構造となっているか
ら、ライト、yイド11を上記金属筒31に挿入してラ
イトガイド32と光学的に結合し、これを固定すれば十
分にその目的が達成される。しかも、固定剤34として
゛シリコーンシムを用いることによって150〜200
℃1!度の隼い温度で確実な固定を行うことができ、簡
易にして機械的強度も十分に確保することができる。ま
た上記の如く、固定化処理を低い温度で行い得るから、
ライトガイド1Fの光信号伝送特性の劣化を招<III
Io虞れもない。また、ライトガイド11゜31は、金
属筒31の内面の光反射によって効率真〈光結合される
上、固定剤J4としてのシリコーンがムをその内部に充
填した場合には、上記固定剤34の固化によりて2本の
ライトガイド1r、IIはあたかも1本のライトガイド
の如く光学的に機能するととKなるから、この点でも光
信号伝送効率の向上を図ることができる。その上、受光
部16の位装置ずれを、ライトガイドIF、81の対向
距離によって調整することが可能となるから、光サイリ
スタ本体IIの7ノード電極13への固定化位置決め精
度を大幅に緩和することが可能となる。この結果、装置
組立ての全般に亘りてその作業性を容易化することがで
き、作業能率の着しい改善を図ることが可能となる。ま
た、本構造では、装置の組立てに先立りて、光信号導入
窓5が予め気密封止して設けられているので、組立て時
の不手際等による封止領域の特性劣化等の事故を効果的
に防止することがで色る等の絶大なゐ効果を奏する。According to the structure of this device, there is no need to hermetically seal and fix the light guide 11 in a metal tube as in the conventional case. Since the guide (optical component) 32, metal tube J1, and fixing agent SX are hermetically sealed, the light and Y-id 11 are inserted into the metal tube 31 and optically coupled to the light guide 32. However, if this is fixed, the purpose will be fully achieved. Moreover, by using a silicone shim as the fixing agent 34,
℃1! It is possible to perform reliable fixing at very high temperatures, and it is simple and can ensure sufficient mechanical strength. Moreover, as mentioned above, since the immobilization treatment can be performed at a low temperature,
Causes deterioration of optical signal transmission characteristics of light guide 1F <III
There is no doubt that Io. In addition, the light guide 11° 31 is effectively optically coupled by light reflection on the inner surface of the metal cylinder 31. In addition, when silicone as the fixing agent J4 is filled inside the light guide 11, the fixing agent 34 is By solidification, the two light guides 1r and II function optically as if they were one light guide, so the optical signal transmission efficiency can also be improved in this respect. Furthermore, since the positional deviation of the light receiving section 16 can be adjusted by the facing distance of the light guide IF, 81, the positioning accuracy of fixing the optical thyristor main body II to the 7-node electrode 13 is greatly reduced. becomes possible. As a result, the overall workability of assembling the device can be simplified, and it is possible to significantly improve work efficiency. In addition, in this structure, the optical signal introduction window 5 is hermetically sealed before the device is assembled, so it is effective to prevent accidents such as deterioration of the characteristics of the sealed area due to clumsiness during assembly. By preventing this from occurring, it has a tremendous effect on color discoloration, etc.
第4図は本発明の別の実施例装置0III部構成を示す
もので、先の実施例における金属筒31を2分割し、第
1の金属筒3X−と第20金属筒Jlb・とにより構成
している。第1の金属筒JJaは、両端をそれぞれ突出
させてライトガイド32を挿入し、気密封止して一定し
喪ものであ勺、同時に筒状絶縁体11を貫通して気密封
止して固定されている。つまシ光童号導入窓5は、この
第1の金属筒11apc9イトガイド32を挿通して外
囲器に気密封止して一定して設けられている。一方、第
3の金属筒31bは、その内面を例えば鏡面研磨J6J
Iして光01射亭を著しく高めてあり、その内ISK光
学的に′a明で、且つライトガイドxr、xzと屈折率
O′@等な固定剤J4を充填している。しかしてこC1
1I212)金属@JMbにはその両端より前記ライト
ガイドxv、szがそれぞれ対向して挿スされ、加重に
よりで両ライトガイド17132カミ光学的且つ機棹的
に結合されるようになりでいる。FIG. 4 shows the configuration of another embodiment of the device 0III of the present invention, in which the metal tube 31 in the previous embodiment is divided into two parts, and is composed of a first metal tube 3X- and a 20th metal tube Jlb. are doing. The first metal tube JJa has both ends protruding from each other, the light guide 32 is inserted therein, and the light guide 32 is hermetically sealed and fixed. At the same time, the first metal tube JJa is penetrated through the cylindrical insulator 11 and hermetically sealed and fixed. has been done. The Tsumashikodogo introduction window 5 is inserted through the first metal cylinder 11apc9 and the light guide 32 and is hermetically sealed to the envelope and provided thereon. On the other hand, the third metal cylinder 31b has an inner surface polished to a J6J mirror surface, for example.
The light 01 radiation is significantly increased, and the ISK is optically bright and is filled with a fixing agent J4 having a refractive index of O'@ and the light guides xr, xz. But lever C1
1I212) The light guides xv and sz are inserted into the metal @JMb from both ends facing each other, and both light guides 17132 are optically and mechanically coupled by weight.
とのような構造であれば、ライトガイド11の気智封止
処理における金属筒31b内部の光反射特性の熱的な劣
化を招くことがないので、先の実施例以上Kli著な効
果が期待できる。If the structure is as shown in FIG. can.
第5図轄更に別な実施例を示すもので、ライトガイド1
1に代えて、板状の光学的に透明な光学部品1jを用い
たものである。Figure 5 shows another embodiment of the light guide 1.
1, a plate-shaped optically transparent optical component 1j is used.
ζOよう表構造であっても、上記光学部品SSを予め外
囲器に対して気密封止して固定しておけばよいので、先
の実施例と同様な効果−d!奏されること線云う壕でも
ない。Even in the case of the ζO surface structure, the above-mentioned optical component SS can be hermetically sealed and fixed to the envelope in advance, so the same effect as in the previous embodiment can be obtained -d! It's not even a moat where it's played.
要するに本発明は、光学部品や結合部品の形状を仕様に
応じて種々変形して用いること力孟でき、また光サイリ
スタに限らず光トランジスタ蝉、他の光駆動形の半導体
装置に対しても十分適用することができ、その実施形態
は特に限定されない。In short, the present invention can be used by changing the shapes of optical parts and coupling parts in various ways according to specifications, and is also suitable for use not only with optical thyristors but also with optical transistors and other optically driven semiconductor devices. The embodiments are not particularly limited.
以上説明したように本発明によれば、外囲器にお妙る気
密性を十分確保で龜る上、組立て時の作業性を大幅に改
善できる。しかも、光信号伝送効率の低下を招くヒとが
なく、信頼性の飛躍的な向上を図り得る勢の従来装置構
造から紘全く期待することので龜ない絶大なる効果を奏
する光駆動形半導体装置をII供することができる。As explained above, according to the present invention, it is possible to ensure sufficient airtightness of the envelope, and also to greatly improve workability during assembly. In addition, there are no holes that cause a decrease in optical signal transmission efficiency, and the reliability of the optically driven semiconductor device can be dramatically improved. II can be provided.
第1図は光サイリスタモゾ、−ルO構成例を示す図、J
llF2図は従来装置O概略構成図、謔3図は本発明〇
−実施例鋏装を示す概略構成図、第4図および第5図は
それぞれ本発明の別の実施例を示す要部構成図である。
11・・・光サイリスタ本体、JJ−・アノード電極、
15・・・カンード電極、16−・受光部、11・・・
ライトガイド、19−・・筒状絶縁体、31・・・金属
筒(結合ISJ&)、Jj・−ライトガイド(光学部品
)、JJ、JJ・・・固定剤、JJ−・・光学部品。Figure 1 is a diagram showing an example of the configuration of an optical thyristor module, J
Figure 1F2 is a schematic diagram of the conventional device O, Figure 3 is a schematic diagram of the scissors device according to the present invention, and Figures 4 and 5 are diagrams of the main parts of another embodiment of the present invention. It is. 11... Optical thyristor body, JJ- anode electrode,
15... Cando electrode, 16-- Light receiving section, 11...
Light guide, 19--cylindrical insulator, 31--metal cylinder (coupling ISJ&), Jj--light guide (optical component), JJ, JJ--fixing agent, JJ--- optical component.
Claims (4)
を内部に収納して気密封止した外囲器と、この外H器の
壁面を貫通して気密に固定され上記外囲器外部からの光
信号を外囲器内部に導入する光学部品と、前記光駆動形
半導体素子の受光面に一端を接続してその他端から導入
された光を上記受光面に供給するライトガイドと、この
ライトガイドの他端に嵌合されて上記光学部品とライト
ガイドとを光学的に結合する内面を光反射処理した筒状
の結合部品とを具備したことを特徴とする光駆動形半導
体装置。(1) A light-driven semiconductor element, an envelope in which the light-driven semiconductor element is housed and hermetically sealed, and an outside of the envelope that is fixed airtightly through the wall of the outer container. an optical component that introduces an optical signal from the light source into the interior of the envelope; a light guide that connects one end to the light receiving surface of the optically driven semiconductor element and supplies light introduced from the other end to the light receiving surface; 1. A light-driven semiconductor device, comprising: a cylindrical coupling component whose inner surface is treated to reflect light, which is fitted to the other end of the light guide to optically couple the optical component and the light guide.
体的に外囲器壁面に気密に固定して設けられたもめであ
って、上記外囲器内側の筒状内部にライトガイドを嵌入
して固定保持するものである特許請求の範囲第1項記載
の光駆動形半導体装置(2) The coupling part is a joint in which an optical part is fitted and integrally fixed to the wall of the envelope in an airtight manner, and the light guide is installed inside the cylindrical interior of the envelope. The optically driven semiconductor device according to claim 1, which is fitted and fixedly held.
イトガイドおよび光学部品と略1kIj等な屈折率を有
する透光性光学材料を充填したものである特許請求の範
囲第1xj4記載の光駆動形半導体装置。(3) The coupling component has a cylindrical interior filled with a light-transmitting optical material having a refractive index of approximately 1 kIj with the light guide and the optical component to be optically coupled. Light-driven semiconductor device.
あるいは、光反射体を塗布して行われるものである特許
請求の範囲第1項記載の光駆動半導体装置。(4) The optically driven semiconductor device according to claim 1, wherein the internal light reflection treatment of the cylindrical joint component is performed by mirror polishing or coating with a light reflector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56101569A JPS583281A (en) | 1981-06-30 | 1981-06-30 | Photovoltaic type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56101569A JPS583281A (en) | 1981-06-30 | 1981-06-30 | Photovoltaic type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS583281A true JPS583281A (en) | 1983-01-10 |
Family
ID=14304032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56101569A Pending JPS583281A (en) | 1981-06-30 | 1981-06-30 | Photovoltaic type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS583281A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6094770A (en) * | 1983-10-28 | 1985-05-27 | Mitsubishi Electric Corp | Light-trigger thyristor and manufacture thereof |
JPS60157256A (en) * | 1984-01-25 | 1985-08-17 | Mitsubishi Electric Corp | Photo trigger thyristor |
JPS6114614A (en) * | 1984-06-29 | 1986-01-22 | Kyocera Corp | Light emitting and photodetecting device for optical communication |
JPS6114615A (en) * | 1984-06-29 | 1986-01-22 | Kyocera Corp | Light emitting and photodetecting device for optical communication |
JPS61109010A (en) * | 1984-11-01 | 1986-05-27 | Fuji Electric Co Ltd | Optically driven semiconductor device |
EP0297802A2 (en) * | 1987-06-29 | 1989-01-04 | Powerex, Inc. | Isolated light-triggered thyristor module |
EP1329753A1 (en) * | 2002-01-21 | 2003-07-23 | Agilent Technologies, Inc. (a Delaware corporation) | Opto-electronic module with insulated connector |
JP2007256372A (en) * | 2006-03-20 | 2007-10-04 | Sumitomo Electric Ind Ltd | Optical fiber connecting component |
-
1981
- 1981-06-30 JP JP56101569A patent/JPS583281A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6094770A (en) * | 1983-10-28 | 1985-05-27 | Mitsubishi Electric Corp | Light-trigger thyristor and manufacture thereof |
JPH029461B2 (en) * | 1983-10-28 | 1990-03-02 | Mitsubishi Electric Corp | |
JPS60157256A (en) * | 1984-01-25 | 1985-08-17 | Mitsubishi Electric Corp | Photo trigger thyristor |
JPS6114615A (en) * | 1984-06-29 | 1986-01-22 | Kyocera Corp | Light emitting and photodetecting device for optical communication |
JPS6114614A (en) * | 1984-06-29 | 1986-01-22 | Kyocera Corp | Light emitting and photodetecting device for optical communication |
JPH0543081B2 (en) * | 1984-06-29 | 1993-06-30 | Kyocera Corp | |
JPH0576603B2 (en) * | 1984-06-29 | 1993-10-25 | Kyocera Corp | |
JPS61109010A (en) * | 1984-11-01 | 1986-05-27 | Fuji Electric Co Ltd | Optically driven semiconductor device |
EP0297802A2 (en) * | 1987-06-29 | 1989-01-04 | Powerex, Inc. | Isolated light-triggered thyristor module |
EP0297802A3 (en) * | 1987-06-29 | 1990-05-23 | Powerex, Inc. | Isolated light-triggered thyristor module |
EP1329753A1 (en) * | 2002-01-21 | 2003-07-23 | Agilent Technologies, Inc. (a Delaware corporation) | Opto-electronic module with insulated connector |
US7261473B2 (en) | 2002-01-21 | 2007-08-28 | Avago Technologies Fiber Ip (Singapore) Pte Ltd | Optical sub assembly |
JP2007256372A (en) * | 2006-03-20 | 2007-10-04 | Sumitomo Electric Ind Ltd | Optical fiber connecting component |
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