JPS6081877A - Photocoupling semiconductor device - Google Patents
Photocoupling semiconductor deviceInfo
- Publication number
- JPS6081877A JPS6081877A JP58191411A JP19141183A JPS6081877A JP S6081877 A JPS6081877 A JP S6081877A JP 58191411 A JP58191411 A JP 58191411A JP 19141183 A JP19141183 A JP 19141183A JP S6081877 A JPS6081877 A JP S6081877A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- light emitting
- light
- photoreceptor
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 239000011347 resin Substances 0.000 abstract description 11
- 229920005989 resin Polymers 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 108091008695 photoreceptors Proteins 0.000 abstract 4
- 238000000034 method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は光結合半導体装置、特に、熱損失の大きい半導
体素子をホトカプラの受光素子として用いる場合に適し
た、熱抵抗の低いホトカブラパッケージの構造に関する
ものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to an optically coupled semiconductor device, and particularly to the structure of a photocoupler package with low thermal resistance, which is suitable when a semiconductor element with large heat loss is used as a light receiving element of a photocoupler. It is.
〈従来技術〉
ホトカブラは、発光ダイオード、多くの場合、赤外発光
ダイオードと受光素子のホトトランジスタを対向させ、
光を透過する材料で光結合し、その外囲を遮光性の材料
で包んで構成される光電デバイスである。これは、電気
信号を光信号に変換し、再び電気信号としてとり出すこ
とにより、電位の異なるシステム間の信号伝達や、ノイ
ズの多い機器に、マイクロコンピュータ等のノイズに弱
いデバイスを実装する場合に有効なデバイスであり、近
年その応用が広まりつつある。<Prior art> A photocoupler consists of a light emitting diode, in most cases an infrared light emitting diode, and a phototransistor as a light receiving element facing each other.
It is a photoelectric device that is constructed by optically coupling a light-transmitting material and surrounding it with a light-shielding material. This converts an electrical signal into an optical signal and extracts it again as an electrical signal, which is useful for signal transmission between systems with different potentials, and for mounting noise-sensitive devices such as microcomputers in noisy equipment. It is an effective device, and its applications are becoming more widespread in recent years.
ホトカプラの用途拡大に伴い、受光素子を単なるホトト
ランジスタに限らず、増幅機能等を内蔵したホトダーリ
ントン−トランジスタ、さらにはホトダイオードを内蔵
したＩＣ等に拡大されつつある。そして一部には、従来
のホトカプラの受光素子の熱損失の数倍もしくは十倍以
上の熱損失のデバイスが用いられようとしている。この
ような場合、ホトカプラの熱抵抗とりわけ、受光素子側
の熱抵抗の低いパッケージが必要である。As the use of photocouplers expands, photodetectors are not limited to simple phototransistors, but are also being expanded to include photodarlington transistors with built-in amplification functions, and even ICs with built-in photodiodes. In some cases, devices with heat loss several times or ten times higher than that of conventional photocouplers are being used. In such a case, a package with low thermal resistance of the photocoupler, particularly on the light receiving element side, is required.
第１図に従来多く用いられているホトカプラの断面構造
を示す。１は赤外発光ダイオードチップ、２はホトトラ
ンジスタなどの受光素子であってＩＣ化された受光素子
であってもかまわない。発光・受光素子は各々リードフ
レーム３，４にボンディングされ、透光性樹脂５によっ
て光路が形成された上、遮光性樹脂６によって包まれて
いる。FIG. 1 shows the cross-sectional structure of a photocoupler that is commonly used in the past. 1 is an infrared light emitting diode chip, and 2 is a light receiving element such as a phototransistor, which may be an IC light receiving element. The light-emitting and light-receiving elements are each bonded to lead frames 3 and 4, have an optical path formed by a translucent resin 5, and are wrapped in a light-shielding resin 6.
ここにおいて、発光・受光素子より発生しだ熱損失は、
そのほとんどがリード３，４を伝わって外部に放散され
る。この熱抵抗を低減させるだめ、第２図の如く、パッ
ケージ上面に金属製の放熱板７を埋め込んだ構造も提案
されているが、熱抵抗の低減は十分とは言い難い。Here, the heat loss generated from the light emitting and light receiving elements is
Most of it is transmitted through the leads 3 and 4 and radiated to the outside. In order to reduce this thermal resistance, a structure in which a metal heat sink 7 is embedded in the upper surface of the package as shown in FIG. 2 has been proposed, but it cannot be said that the reduction in thermal resistance is sufficient.
〈発明の目的〉
本発明は上述のような点に鑑み、１枚のリードフレーム
板から形成でき、充分に熱抵抗を低減した光半導体装置
を提供することを目的とする。<Object of the Invention> In view of the above-mentioned points, an object of the present invention is to provide an optical semiconductor device that can be formed from a single lead frame plate and has sufficiently reduced thermal resistance.
〈実施例〉 以下図面に従って本発明の一実施例を説明する。<Example> An embodiment of the present invention will be described below with reference to the drawings.
第３図にパッケージの平面内部構造図、第４図に第３図
のａ−ａ’線断面図、第５図に第３図のｂ−ｂ’線断面
図を示す。FIG. 3 is a plan view of the internal structure of the package, FIG. 4 is a sectional view taken along line aa' in FIG. 3, and FIG. 5 is a sectional view taken along line bb' in FIG. 3.
ここにおいて、リード１２．１３，１４．１６（ダッシ
ュも含む）及び放熱フィン１５は、全て１枚のリードフ
レームとして接続されて形成され、モールド２０後に切
断分離されて、図のような形状になる。１次側の赤外発
光ダイオード９はり−ド１２のヘッダーにグイボンドさ
れ、金線２１により他電極をリード１３に接続している
。Here, the leads 12, 13, 14, 16 (including the dash) and the radiation fins 15 are all connected and formed as one lead frame, and are cut and separated after the mold 20 to form the shape as shown in the figure. . The infrared light emitting diode 9 on the primary side is bonded to the header of the lead 12, and the other electrode is connected to the lead 13 by a gold wire 21.
２次側の受光素子としては、この場合、ノ（ワートラン
ジスタ及びこれを駆動する増幅回路と制御回路を受光素
子と共に集積化したチップ１０の形で準備される。チッ
プ１０上のホトダイオード１１は図の交鎖斜線部の位置
に形成されている。出力。In this case, the secondary side light receiving element is prepared in the form of a chip 10 in which a power transistor, an amplifier circuit for driving it, and a control circuit are integrated together with the light receiving element.A photodiode 11 on the chip 10 is shown in FIG. It is formed at the position of the intersecting hatched area.Output.
電源、外部端子等の為、チップ１０の塔載されるヘッダ
ーにつながるアイランドリード１４の他に、１６ 、１
６’、・・・の複数のリードを有し、金線１７゜１７、
・・・により各々チップ電極との接続がなされている。In addition to the island leads 14 connected to the header on which the chip 10 is mounted, there are also leads 16 and 1 for power supply, external terminals, etc.
It has multiple leads of 6',..., gold wire 17°17,
... are respectively connected to the chip electrodes.
なお、チップ１０の塔載されるヘッダーはリード１４と
放熱フィン１５と一体につながっている。Note that the header on which the chip 10 is mounted is integrally connected to the leads 14 and the radiation fins 15.
次いで、赤外発光ダイオード９と受光素子チ・ンプ１０
又はその一部のホトダイオード１１を含む部分を、透光
性の樹脂１９で包むようにして光の伝達する部分を形成
する。透光性樹脂１９に」：る光路はチップ９，１０の
上面側にやや突出して楕円に近いような形状に形成され
、裏面はフレームをいくらかおおう程度に樹脂が流れて
形成される。Next, the infrared light emitting diode 9 and the light receiving element chip 10
Alternatively, a portion including the photodiode 11 may be wrapped with a light-transmitting resin 19 to form a light transmitting portion. The light path in the translucent resin 19 is formed in a shape similar to an ellipse, slightly protruding from the upper surface side of the chips 9 and 10, and the resin flows on the back surface to cover the frame to some extent.
このようにして光路が形成された後、遮光性樹脂２０に
よって、トランスファモールド法などにより外囲器が形
成される。After the optical path is formed in this manner, an envelope is formed using the light-shielding resin 20 by a transfer molding method or the like.
光の伝達は、第５図中に示した矢印の如く、赤外発光ダ
イオード９の光が光路の上面の半球状の面で反射され、
２次側のチップ１０上に形成されたホトダイオード１１
に入射する方式となる。Light transmission occurs when the light from the infrared light emitting diode 9 is reflected by the hemispherical surface on the upper surface of the optical path, as shown by the arrow in FIG.
Photodiode 11 formed on the chip 10 on the secondary side
The method is to input the light into the
第６図は上記実施例の外形斜視図である。図示に明らか
なように、本発明のホトカプラは、放熱フィンをもつシ
ングル・イン・ライン型パッケージとなる。FIG. 6 is an external perspective view of the above embodiment. As is clear from the drawings, the photocoupler of the present invention is a single-in-line package with heat dissipation fins.
ここで、端子１２ 、’ Ｉ ３は１次側リードあり、
。Here, terminal 12, 'I3 has a primary lead,
.
端子１４．１６を含む複数の端子は２次側リードである
。１次側と２次側は、符号２６で示すように、ピン間隔
にして１ないし複数本分空けられており、これにより１
次・２次間の沿面放電圧による耐電圧が確保される。ま
た本例においては、放熱フィン１５の電位は２次側のチ
ップ１０がダイボンドされる端子と同電位となっており
、第６図に図示の符号２７で示される沿面も外部放電し
やすい箇所となるが、これは通常のホトカプラの場合と
同様の距離を有しており問題はない。A plurality of terminals including terminals 14 and 16 are secondary leads. The primary side and the secondary side are spaced apart by one or more pins, as shown by the reference numeral 26.
The withstand voltage is ensured by the creeping voltage between the secondary and the secondary. In addition, in this example, the potential of the radiation fin 15 is the same potential as the terminal to which the chip 10 on the secondary side is die-bonded, and the creeping surface indicated by the reference numeral 27 in FIG. 6 is also a location where external discharge is likely to occur. However, this is the same distance as in the case of a normal photocoupler, so there is no problem.
なお、赤外発光ダイオード９の光出力をより有効に伝達
する為に、第７図の符号２２で示す如く、チップをボン
ディングする箇所（リード１２の先端部）を落し込み、
フレームヘッダーの周囲の反射を利用する構造や、同じ
く第７図の符号２３で示したようにセカンドワイヤボン
ド箇所（リード１６′の先端部）のフレームをチップ１
０の表面高さとほぼ等しくなるよう持ち上げた構造にす
ることなどが、さらに光学的、電気的な性能２品質の向
上に有効である。In order to transmit the light output of the infrared light emitting diode 9 more effectively, as shown by reference numeral 22 in FIG.
There is also a structure that utilizes reflection around the frame header, and a frame at the second wire bonding point (the tip of the lead 16'), as shown by reference numeral 23 in FIG.
It is effective to further improve the optical and electrical performance 2 quality by creating a structure that is raised to approximately the same height as the surface height of 0.
また、放熱フィン側パッケージ内部に小孔２４゜２４、
・（第３図）をうがつなどは、パワートランジスタパッ
ケージ等ですでに用いられている手法であるが、この場
合、放電フィン１５とモールド樹脂２０との密着性を向
上する上で、一般の場合と同様に有効である。さらに、
パッケージ外部で放熱フィン１５の中央に孔２５（第３
図及び第６図）を形成しているが、これはより大きな放
熱板に取付ける場合に用いるビス止め孔であって、必要
がないときは無しでもよい。In addition, there is a small hole 24°24 inside the package on the radiation fin side.
- Gargling (Fig. 3) is a method already used in power transistor packages, etc., but in this case, in order to improve the adhesion between the discharge fins 15 and the molding resin 20, is equally valid. moreover,
A hole 25 (third
6), this is a screw hole used when attaching to a larger heat sink, and may be omitted if unnecessary.
〈発明の効果〉
以上のように本発明の構造は、１枚のリードフレーム板
から形成できるものであって、かつ熱抵抗の低い放熱フ
ィン付シングル・イン・ライン型パッケージの有用な光
結合半導体装置が提供できる。<Effects of the Invention> As described above, the structure of the present invention can be formed from a single lead frame plate, and is a useful optically coupled semiconductor in a single-in-line package with heat dissipation fins and low thermal resistance. Equipment can be provided.
第１図は従来例を示す断面図、第２図は他の従来例を示
す断面図、第３図は本発明の一実施例を示す平面内部構
造図、第４図は第３図のａ−ａ’線発明の他の実施例を
示す要部断面図である。
９・・・赤外発光ダイオード、ｌＯ・・受光素子チップ
、１１・・ホトダイオード、１２・１３・・リード（１
次側）、１４・１６・・リード（２次側）、１５・・放
熱フィン、１９・・・透光性樹脂、２ｏ・・・遮光性樹
脂。
代理人 弁理士 福 士 愛 彦（他２名）手続補正書
（特許庁 殿）
１、事件の表示
特願昭５８−１９１４１１
、発明の名称
光結合半導体装置
３、補正をする者
事件との関係 特許出願人
４、代 理 人
自発
６、補正の対象
７、補正の内容
′ 明細書の第５頁第１７行目の１あり、」を「でちり
、」と補正する。
（２）明細書の第６頁第１行目の「放電圧」を「放電」
と補正する。
（３）明細書の第７頁第１行目の１放電」を「放熱」と
補正する。
以 上Fig. 1 is a sectional view showing a conventional example, Fig. 2 is a sectional view showing another conventional example, Fig. 3 is a planar internal structural view showing an embodiment of the present invention, and Fig. 4 is a of Fig. -A' line is a sectional view of a main part showing another embodiment of the invention. 9... Infrared light emitting diode, lO... Light receiving element chip, 11... Photodiode, 12, 13... Lead (1
(next side), 14, 16...Lead (secondary side), 15...Radiating fin, 19...Translucent resin, 2o...Light blocking resin. Agent Patent attorney Aihiko Fukushi (and 2 others) Procedural amendment (Japan Patent Office) 1. Indication of the case Patent application No. 58-191411, Name of the invention Optical coupling semiconductor device 3. Person making the amendment Relationship to the case Patent applicant 4, agent voluntary 6, subject of amendment 7, content of amendment'``1'' on page 5, line 17 of the specification is amended to ``dechiri''. (2) "Discharge voltage" in the first line of page 6 of the specification is "discharge"
and correct it. (3) "1 discharge" in the first line of page 7 of the specification is corrected to "heat radiation."that's all
Claims (1)
ィンが接続されており、１次側（発光素子側）とはチッ
プが同一平面上に塔載され、前記両チップを該両チップ
を包む透光性光路により光学的に結合し、前記放熱フィ
ンと対向する側に１次、２次のそれぞれ複数本のリード
を取出してなることを特徴とする光結合半導体装置。1. A radiation fin is connected to the island lead on the secondary side (light receiving element side), and the chips are mounted on the same plane as the primary side (light emitting element side). 1. An optically coupled semiconductor device, characterized in that it is optically coupled by a surrounding light-transmitting optical path, and has a plurality of primary and secondary leads respectively taken out on the side facing the heat dissipation fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58191411A JPS6081877A (en) | 1983-10-12 | 1983-10-12 | Photocoupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58191411A JPS6081877A (en) | 1983-10-12 | 1983-10-12 | Photocoupling semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6081877A true JPS6081877A (en) | 1985-05-09 |
Family
ID=16274157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58191411A Pending JPS6081877A (en) | 1983-10-12 | 1983-10-12 | Photocoupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6081877A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945391A (en) * | 1986-05-06 | 1990-07-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device housing with laser diode and light receiving element |
| WO1999007023A1 (en) * | 1997-07-29 | 1999-02-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic component |
| US6563203B2 (en) * | 1999-12-07 | 2003-05-13 | Rohm Co., Ltd. | Motor driving device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947567B1 (en) * | 1970-03-18 | 1974-12-17 | ||
| JPS5688383A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Optical coupling element |
-
1983
- 1983-10-12 JP JP58191411A patent/JPS6081877A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947567B1 (en) * | 1970-03-18 | 1974-12-17 | ||
| JPS5688383A (en) * | 1979-12-19 | 1981-07-17 | Toshiba Corp | Optical coupling element |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4945391A (en) * | 1986-05-06 | 1990-07-31 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device housing with laser diode and light receiving element |
| WO1999007023A1 (en) * | 1997-07-29 | 1999-02-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic component |
| EP1566846A2 (en) * | 1997-07-29 | 2005-08-24 | Osram Opto Semiconductors GmbH | Optoelectronic device |
| JP2009152639A (en) * | 1997-07-29 | 2009-07-09 | Osram Opto Semiconductors Gmbh | Surface-mountable photoelectric element |
| EP1566846A3 (en) * | 1997-07-29 | 2009-08-19 | OSRAM Opto Semiconductors GmbH | Optoelectronic device |
| EP2267797A1 (en) * | 1997-07-29 | 2010-12-29 | OSRAM Opto Semiconductors GmbH | Optoelectronic device |
| US6563203B2 (en) * | 1999-12-07 | 2003-05-13 | Rohm Co., Ltd. | Motor driving device |
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