JPH04354386A - Photoelectric transfer device - Google Patents
Photoelectric transfer deviceInfo
- Publication number
- JPH04354386A JPH04354386A JP3155302A JP15530291A JPH04354386A JP H04354386 A JPH04354386 A JP H04354386A JP 3155302 A JP3155302 A JP 3155302A JP 15530291 A JP15530291 A JP 15530291A JP H04354386 A JPH04354386 A JP H04354386A
- Authority
- JP
- Japan
- Prior art keywords
- light
- molded
- light emitting
- lead
- transparent resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 claims abstract description 20
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000012216 screening Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、光信号伝送装置におい
て用いられる発光および受光装置に関し、特にそのパッ
ケージング構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting and light receiving device used in an optical signal transmission device, and more particularly to a packaging structure thereof.
【0002】0002
【従来の技術】図3は、従来のこの種発光装置と受光装
置の正面図である。従来の発光装置は、図3の(a)に
示されるように、リードフレームのリード1上に発光ダ
イオード2とこれを駆動するドライブIC3をマウント
し、ボンディングワイヤ4でチップ−リード間を接続し
た後、透明樹脂8でモールドしたものである。2. Description of the Related Art FIG. 3 is a front view of a conventional light emitting device and light receiving device of this type. In the conventional light emitting device, as shown in FIG. 3(a), a light emitting diode 2 and a drive IC 3 for driving the light emitting diode 2 are mounted on the lead 1 of a lead frame, and the chip and the lead are connected with a bonding wire 4. After that, it was molded with transparent resin 8.
【0003】同様に従来の受光装置は、図3の(b)に
示されるようにリードフレームのリード1上にフォトダ
イオード5とこれの出力信号を処理する信号処理IC6
をマウントし、ボンディングワイヤ4でチップ間および
チップ−リード間を接続した後、透明樹脂8でモールド
したものである。Similarly, the conventional light receiving device has a photodiode 5 on the lead 1 of the lead frame and a signal processing IC 6 for processing the output signal of the photodiode 5, as shown in FIG. 3(b).
After mounting the chips and connecting the chips and the chips to the leads using bonding wires 4, the chips were molded with transparent resin 8.
【0004】光信号伝送装置は、このようにパッケージ
ングされた発光装置と受光装置とがプラスチックファイ
バを介して発光ダイオードとフォトダイオードとが対向
するように配置されたものである。[0004] The optical signal transmission device includes a light emitting device and a light receiving device packaged in this manner and arranged so that the light emitting diode and the photodiode face each other via a plastic fiber.
【0005】[0005]
【発明が解決しようとする課題】上述した従来の光電変
換装置は、透明樹脂のみでモールドされているため、発
光装置では発光ダイオードの出射光の一部がドライブI
Cに入射し、また受光装置では受信光の一部が信号処理
ICに入射する。この入射光の影響を受けてIC内のト
ランジスタのベース電流が増加し、信号電流のノイズレ
ベルが上昇する。そのため従来例の光電変換装置を用い
た光信号伝送装置では、誤動作が起こり正確なデータが
伝達されなくなる恐れがあった。[Problems to be Solved by the Invention] Since the conventional photoelectric conversion device described above is molded only with transparent resin, in the light emitting device, a part of the light emitted from the light emitting diode is transmitted to the drive I.
In the light receiving device, part of the received light enters the signal processing IC. Under the influence of this incident light, the base current of the transistor within the IC increases, and the noise level of the signal current increases. Therefore, in optical signal transmission devices using conventional photoelectric conversion devices, there is a risk that malfunctions may occur and accurate data may not be transmitted.
【0006】[0006]
【課題を解決するための手段】本発明の光電変換装置(
発光装置または受光装置)は、光電変換素子(発光素子
または受光素子)とその付属回路ICとが同一パッケー
ジ内に収納されたものであって、付属回路ICが遮光性
樹脂でモールドされ、そしてこの遮光性モールド体を含
む全体が透明樹脂でモールドされていることを特徴とし
ている。[Means for solving the problems] A photoelectric conversion device of the present invention (
A light-emitting device or a light-receiving device) is a device in which a photoelectric conversion element (light-emitting element or light-receiving element) and its attached circuit IC are housed in the same package, and the attached circuit IC is molded with light-shielding resin. It is characterized by being entirely molded with transparent resin, including the light-shielding molded body.
【0007】[0007]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1の(a)は本発明の一実施例を示す発
光装置の正面図であり、図1の(b)はそのA−A線断
面図である。本実施例を製造するには、リードフレーム
のリード1上に発光ダイオード2およびドライブIC3
をマウントし、ボンディングワイヤ4によりチップ−リ
ード間を接続した後、まずドライブIC部分のみを遮光
性樹脂7でモールドする。次に、透明樹脂8で全体をモ
ールドする。Embodiments Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1(a) is a front view of a light emitting device showing one embodiment of the present invention, and FIG. 1(b) is a cross-sectional view taken along the line A--A. To manufacture this example, a light emitting diode 2 and a drive IC 3 are placed on the lead 1 of the lead frame.
After mounting the chip and connecting the chip and the leads using bonding wires 4, first, only the drive IC portion is molded with light-shielding resin 7. Next, the entire structure is molded with transparent resin 8.
【0008】図2の(a)は本発明の受光装置について
の実施例を示す正面図であり、図2の(b)はそのB−
B線断面図である。本実施例は、図1の発光ダイオード
をフォトダイオード5にドライブICを信号処理IC6
に置き換えたものであって、先の実施例と同様にIC部
分のみを遮光性樹脂7でモールドした後、全体を透明樹
脂8でモールドしたものである。FIG. 2(a) is a front view showing an embodiment of the light receiving device of the present invention, and FIG. 2(b) is a B-
It is a sectional view taken along the B line. In this embodiment, the light emitting diode shown in FIG.
In this example, only the IC portion is molded with light-shielding resin 7, and then the whole is molded with transparent resin 8, as in the previous embodiment.
【0009】このように本発明の光電変換装置は、IC
部分が遮光性樹脂によりモールドされているため、発光
ダイオードの出射光または受信光の一部がICへ入射す
ることがなくなる。したがって、IC内のノイズレベル
が上昇することはなくなり、誤動作を起こす可能性は低
下する。[0009] As described above, the photoelectric conversion device of the present invention
Since the portion is molded with light-shielding resin, part of the emitted light or received light from the light emitting diode will not enter the IC. Therefore, the noise level within the IC will not increase, and the possibility of malfunction will decrease.
【0010】0010
【発明の効果】以上説明したように、本発明は、IC部
分のみを遮光性樹脂でモールドし光電変換素子を透明樹
脂のみでモールドしたものであるので、本発明によれば
、発光ダイオードの出射光がICに入射するのを遮断す
ることができる。従って、本発明によれば、ICのトラ
ンジスタに光電変換による電流が流れるのを防止するこ
とができ、ノイズレベルを低下させることができる。
よって、本発明の光電変換装置を用いて光信号伝送装置
を構成した場合には、誤動作を起こす可能性が低くなり
、伝送装置の動作信頼性が高まる。As explained above, in the present invention, only the IC part is molded with a light-shielding resin and the photoelectric conversion element is molded only with a transparent resin. It is possible to block incident light from entering the IC. Therefore, according to the present invention, it is possible to prevent current caused by photoelectric conversion from flowing through the transistor of an IC, and it is possible to reduce the noise level. Therefore, when an optical signal transmission device is constructed using the photoelectric conversion device of the present invention, the possibility of malfunction is reduced, and the operational reliability of the transmission device is increased.
【図1】 本発明の一実施例を示す正面図と断面図。FIG. 1 is a front view and a sectional view showing an embodiment of the present invention.
【図2】 本発明の他の実施例を示す正面図と断面図
。FIG. 2 is a front view and a sectional view showing another embodiment of the present invention.
【図3】 従来例の正面図。[Fig. 3] Front view of the conventional example.
1…リード、 2…発光ダイオード、 3
…ドライブIC、 4…ボンディングワイヤ、
5…フォトダイオード、 6…信号処理I
C、 7…遮光性樹脂、 8…透明樹脂。1...Lead, 2...Light emitting diode, 3
...Drive IC, 4...Bonding wire,
5...Photodiode, 6...Signal processing I
C, 7...Light-shielding resin, 8...Transparent resin.
Claims (1)
受光素子およびその信号処理用ICがリードフレーム上
にマウントされ同一パッケージ内に収納されている光電
変換装置において、駆動用ICまたは信号処理用ICが
遮光性樹脂でモールドされかつ発光素子または受光素子
が透明樹脂でモールドされていることを特徴とする光電
変換装置。Claim 1: In a photoelectric conversion device in which a light emitting element and its driving IC or a light receiving element and its signal processing IC are mounted on a lead frame and housed in the same package, the driving IC or the signal processing IC is mounted on a lead frame and housed in the same package. A photoelectric conversion device characterized by being molded with a light-shielding resin and having a light emitting element or a light receiving element molded with a transparent resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3155302A JPH04354386A (en) | 1991-05-31 | 1991-05-31 | Photoelectric transfer device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3155302A JPH04354386A (en) | 1991-05-31 | 1991-05-31 | Photoelectric transfer device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04354386A true JPH04354386A (en) | 1992-12-08 |
Family
ID=15602932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3155302A Pending JPH04354386A (en) | 1991-05-31 | 1991-05-31 | Photoelectric transfer device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04354386A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6563203B2 (en) * | 1999-12-07 | 2003-05-13 | Rohm Co., Ltd. | Motor driving device |
JP2008027989A (en) * | 2006-07-18 | 2008-02-07 | Hamamatsu Photonics Kk | Semiconductor light-emitting device |
JP2011193033A (en) * | 2011-07-07 | 2011-09-29 | Rohm Co Ltd | Infrared data communication module |
JP2012227514A (en) * | 2011-04-08 | 2012-11-15 | Sony Corp | Pixel chip, display panel, illumination panel, display device, and illumination device |
-
1991
- 1991-05-31 JP JP3155302A patent/JPH04354386A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6563203B2 (en) * | 1999-12-07 | 2003-05-13 | Rohm Co., Ltd. | Motor driving device |
JP2008027989A (en) * | 2006-07-18 | 2008-02-07 | Hamamatsu Photonics Kk | Semiconductor light-emitting device |
JP2012227514A (en) * | 2011-04-08 | 2012-11-15 | Sony Corp | Pixel chip, display panel, illumination panel, display device, and illumination device |
JP2011193033A (en) * | 2011-07-07 | 2011-09-29 | Rohm Co Ltd | Infrared data communication module |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2002261265A (en) | Optical communication device | |
JPH09284217A (en) | Optical communication device | |
JP3109885B2 (en) | Optical semiconductor device | |
US5250816A (en) | Multichip system and method of supplying clock signal therefor | |
JPH04354386A (en) | Photoelectric transfer device | |
US6606174B1 (en) | Optical semiconductor device | |
JP3676136B2 (en) | Optical coupling element | |
JP3809969B2 (en) | Infrared transceiver module structure | |
US7759753B2 (en) | Integrated circuit die, integrated circuit package, and packaging method | |
JP2576400Y2 (en) | Optical coupling device | |
JP2506239Y2 (en) | Optical coupling device | |
JPH1154789A (en) | Optically-coupled element | |
JP3952611B2 (en) | Photoelectric conversion device | |
JPH04245487A (en) | Optical signal module | |
JPH0551192B2 (en) | ||
JPH1070304A (en) | Monolithic chip device for both photodetecting and light-emitting | |
JP3022592B2 (en) | Reflective photo sensor | |
JP2773494B2 (en) | Optical coupling device | |
KR100407407B1 (en) | Color sensor | |
JP3331644B2 (en) | Multi-emission optical transmitter | |
JPH0651001Y2 (en) | Optical coupling element | |
JPH03185940A (en) | Integrated signal branch device for plastic fiber | |
JPH04106985A (en) | Photocoupler | |
JPH04103179A (en) | Optical signal transmitter | |
JPS6365683A (en) | Optical function element module |