JP2008027989A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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JP2008027989A
JP2008027989A JP2006196016A JP2006196016A JP2008027989A JP 2008027989 A JP2008027989 A JP 2008027989A JP 2006196016 A JP2006196016 A JP 2006196016A JP 2006196016 A JP2006196016 A JP 2006196016A JP 2008027989 A JP2008027989 A JP 2008027989A
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light emitting
cap member
emitting device
semiconductor light
case
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JP4871047B2 (en
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Takayuki Suzuki
貴幸 鈴木
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Hamamatsu Photonics KK
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that is applicable to optical link modules and is equipped with a structure suitable for adjusting emission intensity and making the dispersion uniform. <P>SOLUTION: The semiconductor light-emitting device 1 has a light-emitting element, a drive circuit for driving the light-emitting element, and a lead frame on which the light-emitting element and the drive circuit are mounted. The semiconductor light-emitting device 1 has adjusting leads 27a and 27b, having one end connected to an internal lead of the lead frame, the other end connected with an external lead of the lead frame and parts between those ends that protrude to the outside of a sealing resin. The device is structured so that the voltage applied to the light-emitting element varies, by cutting or eliminating the adjusting leads 27a and 27b. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、発光素子を搭載したリードフレームが樹脂で成形され覆われている半導体発光装置に関する。   The present invention relates to a semiconductor light emitting device in which a lead frame on which a light emitting element is mounted is molded and covered with a resin.

従来から、発光ダイオード(Light Emitting Diode,以下「LED」という)、面発光半導体レーザ(Vertical Cavity Surface Emitting Laser,以下「VCSEL」という)等の半導体発光素子には、発光強度(出力)にばらつきがあるという素子固有の問題があった。例えば、LEDはGaAsPなどのPN接合における拡散の不均一や、電極と発光面との光遮蔽の不完全、さらには特性の不均一等に起因して発光強度にばらつきを生じることが不可避であり、そのことが安定した光通信を行う際の障害となりかねなかった。特に1チップ上に多数の発光点が形成されている通常のモノリシック型LEDの場合は、多数の発光点からの発光強度が均一になり難く、たとえ同じ基板から製造されていても、発光強度に大きなばらつきを生じやすい。   Conventionally, semiconductor light emitting devices such as light emitting diodes (Light Emitting Diodes, hereinafter referred to as “LEDs”) and surface emitting semiconductor lasers (Vertical Cavity Surface Emitting Lasers, hereinafter referred to as “VCSELs”) have variations in light emission intensity (output). There was a problem inherent to the device. For example, it is inevitable that the light emission intensity of the LED varies due to non-uniform diffusion at the PN junction such as GaAsP, incomplete light shielding between the electrode and the light-emitting surface, and non-uniform characteristics. This could be an obstacle to stable optical communication. In particular, in the case of a normal monolithic LED in which a large number of light emitting points are formed on one chip, the light emission intensity from the large number of light emitting points is difficult to be uniform. Large variations are likely to occur.

そのため、従来から半導体発光素子を有する半導体発光装置については発光素子の発光強度を調整し、そのばらつきを均一にし得る技術があった。例えば、LEDアレイチップの外部に制限抵抗を加えて電圧を下げることにより、LEDに流れる電流をほぼ一定とする技術や、特許文献1に開示されているように、LEDにトランジスタを直列接続して線路抵抗損失を補償し、トランジスタとLEDにツェナーダイオードを並列接続してLEDに所定の電流を通電し、線路長の増加に伴うLEDの発光輝度低下を防止するようにした技術があった。   For this reason, there has conventionally been a technique for adjusting the light emission intensity of a light emitting element to make the variation uniform for a semiconductor light emitting device having a semiconductor light emitting element. For example, by adding a limiting resistor outside the LED array chip to lower the voltage, a technique for making the current flowing through the LED substantially constant, or as disclosed in Patent Document 1, a transistor is connected in series with the LED. There has been a technique that compensates for line resistance loss, connects a Zener diode in parallel to a transistor and an LED, and supplies a predetermined current to the LED, thereby preventing a decrease in light emission luminance of the LED accompanying an increase in line length.

また、特許文献2に開示されているように、1チップ中に多数の発光点を備えた発光面に帯状の抵抗性物質を接続する一方、電圧印加のための導電体を抵抗性物質と平行に配置して、抵抗性物質と導電体とのボンディング位置を可変とすることで抵抗値を連続的に変化させ、発光強度のばらつきを低減し得るようにした技術もあった。   Further, as disclosed in Patent Document 2, a strip-shaped resistive material is connected to a light emitting surface having a large number of light emitting points in one chip, while a conductor for applying a voltage is parallel to the resistive material. There is also a technique in which the resistance value is continuously changed by changing the bonding position between the resistive material and the conductor so as to reduce the variation in the emission intensity.

さらに、発光素子に流れる電流を調整する方法としては、外部から与える電気的なパルスを用い、ツェナーザップ技術などでヒューズドロムを構成してディジタル的に制御したり、レーザトリミング技術等を用いて内部抵抗をアナログ的に調整する方法や、外部からフラッシュメモリのデータを書き換えディジタル的に調整する方法等があった。
特開昭59−114879号公報 特公平7−46735号公報
Furthermore, as a method of adjusting the current flowing through the light emitting element, an external electric pulse is used, a fuse drom is configured with a Zener Zap technology or the like, and digital control is performed, or an internal resistance using a laser trimming technology or the like is used. There are a method of adjusting the data in an analog manner, a method of digitally adjusting the data in the flash memory from the outside, and the like.
JP 59-1114879 A Japanese Examined Patent Publication No. 7-46735

上述したように、従来から、半導体発光装置に関して発光素子の発光強度を調整し、そのばらつきを均一にし得る技術が知られていた。   As described above, conventionally, there has been known a technique capable of adjusting the light emission intensity of a light emitting element and making the variation uniform with respect to a semiconductor light emitting device.

しかしながら、光ファイバと発光素子とが位置合わせされた状態で取り付けられる光リンクモジュールに適用される半導体発光装置については次のような問題があった。すなわち、この種の半導体発光装置は光伝送手段としての光ファイバと発光素子との調芯(位置合わせ)を行う必要があり、そのためには、発光素子を搭載した基板にキャップ部材等を取り付ける等して組み立て作業を行わねばならなかった。ところが、組み立て作業を行うと、発光素子や駆動回路がキャップ部材等によって封止されてしまうため、パッケージ内のトリミングを行えなくなってしまい、一方、組み立て作業を行う前では、光ファイバと発光素子との調芯が行われていないので、光ファイバを通して監視しながら発光強度を調整することができなかった。   However, the semiconductor light emitting device applied to the optical link module attached in a state where the optical fiber and the light emitting element are aligned has the following problems. That is, this type of semiconductor light-emitting device needs to align (align) the optical fiber as the light transmission means and the light-emitting element. For this purpose, a cap member or the like is attached to the substrate on which the light-emitting element is mounted. I had to do the assembly work. However, when the assembly work is performed, the light emitting element and the drive circuit are sealed with a cap member or the like, so that trimming in the package cannot be performed. On the other hand, before the assembly work is performed, the optical fiber and the light emitting element Therefore, the emission intensity could not be adjusted while monitoring through the optical fiber.

したがって、この種の半導体発光装置は、上述した従来の技術のようにして発光素子の発光強度を調整し、そのばらつきを均一にするのに適していないという欠点があった。   Therefore, this type of semiconductor light-emitting device has a drawback that it is not suitable for adjusting the light emission intensity of the light-emitting element and making the variation uniform as in the conventional technique described above.

そこで、本発明は上記課題を解決するためになされたもので、光リンクモジュールに適用可能で、発光強度を調整し、ばらつきを均一にするのに適した構造を備えた半導体発光装置を提供することを目的とする。   Accordingly, the present invention has been made to solve the above-described problems, and can be applied to an optical link module, and provides a semiconductor light emitting device having a structure suitable for adjusting light emission intensity and uniforming variation. For the purpose.

上記課題の解決のため、本発明は、発光素子およびその発光素子を駆動するための駆動回路を備え、発光素子および駆動回路を搭載したリードフレームが成形された封止用樹脂で覆われている半導体発光装置であって、リードフレームの内部リードに一端部が接続されて、他端部が内部リードまたはリードフレームの外部リードに接続され、かつ一端部と他端部との間が封止用樹脂の外側に張り出した調整用リードを有し、調整用リードにおける封止用樹脂の外側に張り出した部分を切断または切除することによって、発光素子に印加される電圧が変わるように構成されている半導体発光装置を特徴とする。   In order to solve the above problems, the present invention includes a light emitting element and a drive circuit for driving the light emitting element, and a lead frame on which the light emitting element and the drive circuit are mounted is covered with a molded sealing resin. A semiconductor light emitting device having one end connected to an internal lead of a lead frame, the other end connected to an internal lead or an external lead of the lead frame, and a gap between the one end and the other end for sealing An adjustment lead projecting outside the resin is provided, and the voltage applied to the light emitting element is changed by cutting or excising a portion of the adjustment lead projecting outside the sealing resin. Features a semiconductor light emitting device.

この半導体発光装置は調整用リードを有し、調整用リードが封止用樹脂の外側に張り出した部分を有するので、封止用樹脂の外側から切断または切除することができる。また、封止用樹脂の外側から調整用リードを切断または切除すると、発光素子に印加される電圧が変わるようになっている。   Since this semiconductor light emitting device has an adjustment lead, and the adjustment lead has a portion protruding outside the sealing resin, it can be cut or excised from the outside of the sealing resin. Further, when the adjustment lead is cut or excised from the outside of the sealing resin, the voltage applied to the light emitting element is changed.

また、上記半導体発光装置は、発光素子、駆動回路およびリードフレームが成形された封止用樹脂で覆われた構成を有し、外部リードおよび調整用リードが外側に設けられた樹脂ケースと、その樹脂ケースに載置可能で、樹脂ケース上での位置変更可能なキャップ部材とを更に有することが好ましい。   The semiconductor light emitting device has a configuration in which a light emitting element, a drive circuit, and a lead frame are covered with a molded sealing resin, and an external lead and an adjustment lead are provided on the outside, and a resin case thereof It is preferable to further include a cap member that can be placed on the resin case and whose position on the resin case can be changed.

この半導体発光装置は、キャップ部材を樹脂ケース上に載置して位置変更を行え、その後に樹脂ケースにキャップ部材を固定してから調整用リードを切断または切除することができる。   In this semiconductor light emitting device, the cap member can be placed on the resin case to change the position, and then the adjustment lead can be cut or excised after the cap member is fixed to the resin case.

さらに、上記いずれの半導体発光装置もキャップ部材が光ファイバを挿入可能なファイバガイド部を有し、樹脂ケースに載置したままキャップ部材を動かして、ファイバガイド部の光軸と発光素子の光軸とを一致させる光軸調整が行われた後、レーザ溶着によって、キャップ部材が樹脂ケースに固定されていることが好ましい。   Further, any of the above semiconductor light emitting devices has a fiber guide part into which the cap member can insert the optical fiber, and the cap member is moved while being placed on the resin case, so that the optical axis of the fiber guide part and the optical axis of the light emitting element It is preferable that the cap member is fixed to the resin case by laser welding after the optical axis adjustment is performed so as to match.

このような半導体発光装置は、キャップ部材のファイバガイド部に光ファイバを挿入した上でキャップ部材を動かして、ファイバガイド部の光軸と発光素子の光軸とを一致させる光軸調整を行え、その後にレーザ溶着によってキャップ部材を樹脂ケースに固定してから調整用リードを切断または切除することができる。   Such a semiconductor light-emitting device can adjust the optical axis by aligning the optical axis of the fiber guide part and the optical axis of the light-emitting element by moving the cap member after inserting the optical fiber into the fiber guide part of the cap member, Then, after fixing the cap member to the resin case by laser welding, the adjustment lead can be cut or cut off.

以上のように、この発明によれば、光リンクモジュールに適用可能で、発光強度を調整し、ばらつきを均一にするのに適した構造を備えた半導体発光装置が得られる。   As described above, according to the present invention, it is possible to obtain a semiconductor light-emitting device that can be applied to an optical link module and has a structure suitable for adjusting light emission intensity and uniforming variation.

以下、本発明による半導体発光装置の好適な実施の形態について添付図面を参照しながら説明する。なお、同一要素には同一符号を用い、重複する説明は省略する。   Preferred embodiments of a semiconductor light emitting device according to the present invention will be described below with reference to the accompanying drawings. In addition, the same code | symbol is used for the same element and the overlapping description is abbreviate | omitted.

(半導体発光装置の構造)
図1は、本発明による半導体発光装置1を示す平面図、図2は斜視図、図3(A)は正面図、図3(B)は右側面図である。また、図4は図1のIV-IV線断面図、図5は図1のV-V線断面図である。半導体発光装置1は、キャップ部材2と、プリモールドケース20とを有し、そのキャップ部材2をプリモールドケース20に載置したままキャップ部材2を動かして後述する光軸調整が行われた後、キャップ部材2がプリモールドケース20に固定された構成を有し、さらに後述する発光素子102の発光強度が調整されたものとなっている。
(Structure of semiconductor light emitting device)
1 is a plan view showing a semiconductor light emitting device 1 according to the present invention, FIG. 2 is a perspective view, FIG. 3A is a front view, and FIG. 3B is a right side view. 4 is a sectional view taken along line IV-IV in FIG. 1, and FIG. 5 is a sectional view taken along line VV in FIG. The semiconductor light emitting device 1 has a cap member 2 and a pre-molded case 20, and after the cap member 2 is moved while the cap member 2 is placed on the pre-molded case 20, optical axis adjustment described later is performed. The cap member 2 is fixed to the pre-molded case 20, and the light emission intensity of the light emitting element 102 to be described later is adjusted.

キャップ部材2は、所定波長のレーザ光を透過し得る光透過性樹脂からなっている。キャップ部材2は、図6〜図10にも示すようにプリモールドケース20の後述するケース本体部21に対応する矩形板状に形成された矩形状基部3と、矩形状基部3の片面(この面を表面とする)3aに設けられたファイバガイド部4と、矩形状基部3のファイバガイド部4の裏面3b側に設けられた嵌込部5とを有し、嵌込部5を取り囲むように係合凹部9が設けられている。   The cap member 2 is made of a light transmissive resin that can transmit laser light having a predetermined wavelength. As shown in FIGS. 6 to 10, the cap member 2 includes a rectangular base portion 3 formed in a rectangular plate shape corresponding to a case main body portion 21 to be described later of the premolded case 20, and one side of the rectangular base portion 3 (this A fiber guide portion 4 provided on 3a and a fitting portion 5 provided on the back surface 3b side of the fiber guide portion 4 of the rectangular base 3 so as to surround the fitting portion 5. An engaging recess 9 is provided in the front.

ファイバガイド部4は矩形状基部3の表面3aにおける一方の短手辺の近くであって、キャップ部材2をプリモールドケース20に載置したままファイバガイド部4と後述する発光素子102との光軸調整が行える箇所に配置されている。このファイバガイド部4は特に図9に詳しく示すように、光ファイバ100の端部100a(図4,5参照)を挿入し、その挿入状態を保持可能な高さと内径を有し、矩形状基部3の表面3aから突出する円筒状壁部6と、円筒状壁部6に続いて表面3aから落とし込まれ、内径が漸次狭まる縮径部7と、縮径部7を閉塞する底部8とを有する有底筒状に形成されている。   The fiber guide portion 4 is near one short side of the surface 3a of the rectangular base portion 3, and the light of the fiber guide portion 4 and a light emitting element 102 to be described later is placed with the cap member 2 placed on the premolded case 20. It is arranged at a place where the axis can be adjusted. As shown in detail in FIG. 9, the fiber guide portion 4 has a height and an inner diameter capable of holding the end portion 100a (see FIGS. 4 and 5) of the optical fiber 100 and holding the inserted state, and has a rectangular base portion. 3, a cylindrical wall portion 6 that protrudes from the surface 3 a, a reduced diameter portion 7 that is dropped from the surface 3 a following the cylindrical wall portion 6, and an inner diameter gradually decreases, and a bottom portion 8 that closes the reduced diameter portion 7. It has a bottomed cylindrical shape.

嵌込部5は特に図6に示すように、矩形状基部3の裏面3bにおけるプリモールドケース20の後述する凹部26に対応する部分に形成されている。この嵌込部5は、四隅の側面がそれぞれ後述する係合凸部24に対応するように裏面3bの中央に向かって凹むように湾曲した曲面状係合面5aとなり、その他が後述する周壁部25に沿って平坦な平面状係合面5bとなっていて、全体が凹部26に対応する形状となっている。   In particular, as shown in FIG. 6, the fitting portion 5 is formed in a portion corresponding to a later-described concave portion 26 of the pre-molded case 20 on the back surface 3 b of the rectangular base portion 3. The fitting portion 5 is a curved engagement surface 5a that is curved so as to be recessed toward the center of the back surface 3b so that the side surfaces of the four corners correspond to engagement protrusions 24 described later, and the other is a peripheral wall portion described later. The flat engagement surface 5 b is flat along the line 25, and has a shape corresponding to the recess 26 as a whole.

係合凹部9は、嵌込部5が突出幅h1で形成されるように、裏面3bの周縁部分が嵌込部5よりも厚さ方向に後退または凹み、嵌込部5が相対的に突出するようにして形成されている。この係合凹部9は、裏面3bのうちの四隅に配置された4つの角部領域3cがそれぞれ係合凸部24の天頂部24aよりも大きい大きさを有し、その天頂部24aに載置可能な構成を有している。また、係合凹部9は、各曲面状係合面5aが各係合凸部24に接触または隙間を空けて対峙することによって係合可能であり、しかも、嵌込部5が凹部26に嵌め込まれたときに各係合凸部24および周壁部25との間に後述するスペース部10が確保されるように構成されている。   The engaging recess 9 is such that the peripheral portion of the back surface 3b is recessed or recessed in the thickness direction of the fitting portion 5 so that the fitting portion 5 is formed with the protruding width h1, and the fitting portion 5 protrudes relatively. It is formed like this. The engagement recess 9 has four corner regions 3c arranged at the four corners of the back surface 3b, each having a size larger than the zenith portion 24a of the engagement projection 24, and is placed on the zenith portion 24a. It has a possible configuration. The engaging recesses 9 can be engaged by the curved engaging surfaces 5 a contacting the engaging protrusions 24 or confronting each other with a gap, and the fitting part 5 is fitted in the recess 26. In this case, a space portion 10 to be described later is secured between each engaging convex portion 24 and the peripheral wall portion 25.

プリモールドケース20は、本発明における樹脂ケースであって、図11〜図15に示すように、ケース本体部21と、ケース本体部21から外側に突出した4本の外部リード22a,22b,22c,22dおよび調整用リード27a,27bとを有している。   The pre-molded case 20 is a resin case according to the present invention, and as shown in FIGS. 11 to 15, a case main body 21 and four external leads 22 a, 22 b, 22 c protruding outward from the case main body 21. , 22d and adjustment leads 27a, 27b.

ケース本体部21は成形された封止用樹脂としての所定波長のレーザ光を吸収する光吸収性樹脂によってリードフレーム101が覆われている。リードフレーム101は、LED,VCSELといった発光素子(本実施の形態では、LEDとしているが、もちろん他の発光素子でもよい)102および発光素子102を駆動するための後述する駆動調整回路103を備えたICチップ104が搭載され、4本の外部リード22a,22b,22c,22dおよび調整用リード27a,27bのほか、成形された光吸収性樹脂によって覆われている内部リード28a,28b,28c,28d,28e,28fを有している。内部リード28a,28b,28c,28d,28e,28fは、ボンディングワイヤ105によってICチップ104に接続され、そのうちの内部リード28a,28b,28c,28dがそれぞれ外部リード22a,22b,22c,22dに接続され、内部リード28e,28fが調整用リード27a,27bに接続されている。   The case main body 21 has the lead frame 101 covered with a light-absorbing resin that absorbs laser light having a predetermined wavelength as a molded sealing resin. The lead frame 101 includes a light emitting element such as an LED or a VCSEL (in this embodiment, it is an LED, but other light emitting elements may be used as well) 102 and a drive adjustment circuit 103 to be described later for driving the light emitting element 102. In addition to the four external leads 22a, 22b, 22c, and 22d and the adjustment leads 27a and 27b, the IC chip 104 is mounted and the internal leads 28a, 28b, 28c, and 28d covered with the molded light absorbing resin. , 28e, 28f. The internal leads 28a, 28b, 28c, 28d, 28e, and 28f are connected to the IC chip 104 by bonding wires 105, and the internal leads 28a, 28b, 28c, and 28d are connected to the external leads 22a, 22b, 22c, and 22d, respectively. The internal leads 28e and 28f are connected to the adjustment leads 27a and 27b.

そして、外部リード22a,22b,22c,22dのうち、両側に配置されている外部リード22a,22dにそれぞれ調整用リード27a,27bが接続されている。調整用リード27a,27bは、内部リード28e,28fに一端部が接続され、また、他端部が外部リード22a,22dに接続されていて、そのそれぞれの一端部と他端部との間の部分が光吸収性樹脂(ケース本体部21)の外側に張り出している。調整用リード27a,27bは、ケース本体部21の外側に張り出した部分を有しているので、プリモールドケース20の外側から切り込みを入れて切断したり、切除したりすることができる。調整用リード27a,27bに切り込みを入れたり、切除したりすると、調整用リード27a,27bの一端部と他端部とが分離され、外部リード22a,22dと、内部リード28e,28fとの接続を切断することができる。   Of the external leads 22a, 22b, 22c, and 22d, the adjustment leads 27a and 27b are connected to the external leads 22a and 22d arranged on both sides, respectively. The adjustment leads 27a and 27b have one end connected to the internal leads 28e and 28f and the other end connected to the external leads 22a and 22d, respectively, between the one end and the other end. The part has protruded outside the light absorptive resin (case main-body part 21). Since the adjustment leads 27a and 27b have a portion protruding to the outside of the case main body portion 21, the adjustment leads 27a and 27b can be cut and cut from the outside of the premolded case 20 or cut off. When the adjustment leads 27a and 27b are cut or cut, one end and the other end of the adjustment leads 27a and 27b are separated, and the external leads 22a and 22d are connected to the internal leads 28e and 28f. Can be cut off.

また、ケース本体部21は、発光素子102を有する矩形状の素子搭載部23と、キャップ部材2を載置および係合可能で、素子搭載部23における発光素子102よりも外側の四隅部分に配置された4つの係合凸部24と、素子搭載部23の周縁における各係合凸部24の間に配置された周壁部25とを有している。そして、ケース本体部21は4つの係合凸部24および周壁部25で囲まれる部分が凹部26となっていて、この凹部26に前述の嵌込部5が嵌め込めるようになっている。   In addition, the case main body 21 can be mounted and engaged with the rectangular element mounting portion 23 having the light emitting element 102 and the cap member 2, and is arranged at the four corners outside the light emitting element 102 in the element mounting portion 23. The four engaging convex portions 24 and the peripheral wall portion 25 arranged between the engaging convex portions 24 at the periphery of the element mounting portion 23 are provided. The case body 21 has a concave portion 26 surrounded by the four engaging convex portions 24 and the peripheral wall portion 25, and the above-described fitting portion 5 can be fitted into the concave portion 26.

各係合凸部24は、天頂部24aと凹部26に臨む湾曲状側面24bとを有し、周壁部25よりも突出幅h2(h1>h2)で突出する凸状に形成されている。また、各係合凸部24は、凹部26に嵌込部5を嵌め込んだときにキャップ部材2の角部領域3cがそれぞれ天頂部24aに載置される載置受部としての機能を有し、また、各曲面状係合面5aおよび平面状係合面5bがそれぞれ湾曲状側面24bおよび周壁部25に接触または隙間を空けて対峙することによって、前述の係合凹部9が係合するようになっている。   Each engagement convex part 24 has the zenith part 24a and the curved side surface 24b which faces the recessed part 26, and is formed in the convex shape which protrudes by the protrusion width h2 (h1> h2) rather than the surrounding wall part 25. FIG. In addition, each engagement convex portion 24 has a function as a placement receiving portion in which the corner region 3c of the cap member 2 is placed on the zenith portion 24a when the fitting portion 5 is fitted in the concave portion 26, respectively. In addition, the curved engaging surfaces 5a and the flat engaging surfaces 5b are brought into contact with the curved side surfaces 24b and the peripheral wall portion 25 or face each other with a gap therebetween, so that the above-described engaging recess 9 is engaged. It is like that.

一方、ICチップ104には、発光素子102とともに、駆動調整回路103が図17に示すような回路構成で備えられている。駆動調整回路103は、電流を流して発光素子102を駆動させる駆動部103aと、駆動部103aに流す電流を調整する調整部103bと、論理回路部103cとを有し、さらに、抵抗素子R31,R32を有している。駆動部103aはトランジスタMP14,MP15,MP16,MP17を有し、入力信号SによってトランジスタMP14,MP15,MP16,MP17を作動させることにより、入力電圧Vccの発光素子102へのオン、オフを切り替えるようになっている。   On the other hand, the IC chip 104 includes a drive adjustment circuit 103 together with the light emitting element 102 in a circuit configuration as shown in FIG. The drive adjustment circuit 103 includes a drive unit 103a that drives the light emitting element 102 by flowing a current, an adjustment unit 103b that adjusts a current passed through the drive unit 103a, and a logic circuit unit 103c. R32 is included. The drive unit 103a includes transistors MP14, MP15, MP16, and MP17, and by operating the transistors MP14, MP15, MP16, and MP17 by the input signal S, the input voltage Vcc is switched on and off to the light emitting element 102. It has become.

調整部103bは、抵抗値の異なる抵抗素子R27,R28,R29,R30およびトランジスタMN32,MN33,MN34,MN35を有し、抵抗素子R27,R28,R29,R30によって入力電圧Vccの発光素子102へ印加される電圧を調整し、トランジスタMN32,MN33,MN34,MN35によってトランジスタMP14のゲートに加わる電圧と,MP15のソースとゲートに加わる電圧を調整し、発光素子102に流れる電流を調整するようになっている。また、論理回路部103cは、AND回路51、53、55、OR回路52およびXOR回路54を有し、これらによって、MN32,MN33,MN34,MN35のオン、オフを切り替えるようになっている。   The adjustment unit 103b includes resistance elements R27, R28, R29, and R30 having different resistance values and transistors MN32, MN33, MN34, and MN35, and is applied to the light emitting element 102 having the input voltage Vcc by the resistance elements R27, R28, R29, and R30. The voltage applied to the gate of the transistor MP14 and the voltage applied to the source and gate of the MP15 are adjusted by the transistors MN32, MN33, MN34, and MN35, and the current flowing through the light emitting element 102 is adjusted. Yes. The logic circuit unit 103c includes AND circuits 51, 53, and 55, an OR circuit 52, and an XOR circuit 54, and these switches the MN32, MN33, MN34, and MN35 on and off.

そして、このように構成された駆動調整回路103の各入力端子は、各内部リードに対して次のようにして接続されている。すなわち、駆動調整回路103の図示しないGND端子が内部リード28a,28dに接続されている。また、入力信号Sの入力端子が内部リード28bに接続され,入力電圧Vccの入力端子が内部リード28cに接続されている。さらに、論理回路部103cの入力端子Cont1,Cont2が内部リード28e,28fに接続されている。   Each input terminal of the drive adjustment circuit 103 configured as described above is connected to each internal lead as follows. That is, the GND terminal (not shown) of the drive adjustment circuit 103 is connected to the internal leads 28a and 28d. An input terminal for the input signal S is connected to the internal lead 28b, and an input terminal for the input voltage Vcc is connected to the internal lead 28c. Further, the input terminals Cont1 and Cont2 of the logic circuit unit 103c are connected to the internal leads 28e and 28f.

したがって、例えば、調整用リード27aにおけるケース本体部21からの張り出し部分に対し、図25(A)に示すように切り込みPを入れたり、張り出し部分を図25(B)に示すように切除したりすると、外部リード22aと内部リード28eとの接続が切断されるので、図17において、配線aが切断されることとなる。そのため、AND回路51、OR回路52およびXOR回路54について、切断前にかかっていたGND端子の電位が、入力電圧Vccの抵抗素子R32における降下電圧に変化する。この電圧の変化によって、論理回路部103cの出力が変わり、さらに調整部103bにおけるトランジスタMN32,MN33,MN34,MN35のオン、オフが切り替わり、発光素子102へ印加される電圧が入力電圧Vccから抵抗素子R27,R28,R29,R30のいずれか少なくとも1つによる降下電圧に変わることとなる。   Therefore, for example, the protruding portion from the case main body 21 in the adjustment lead 27a is cut as shown in FIG. 25 (A), or the protruding portion is cut out as shown in FIG. 25 (B). Then, since the connection between the external lead 22a and the internal lead 28e is cut, the wiring a is cut in FIG. Therefore, for the AND circuit 51, the OR circuit 52, and the XOR circuit 54, the potential at the GND terminal, which was applied before the disconnection, changes to a voltage drop in the resistance element R32 of the input voltage Vcc. Due to this voltage change, the output of the logic circuit portion 103c changes, and the transistors MN32, MN33, MN34, and MN35 in the adjustment portion 103b are turned on and off, and the voltage applied to the light emitting element 102 is changed from the input voltage Vcc to the resistance element. The voltage drops due to at least one of R27, R28, R29, and R30.

また、同様に調整用リード27bを切除したりすると、外部リード22dと内部リード28fとの接続が切断されるので、図17における配線bが切断される。この場合も、論理回路部103cの出力が変わり、さらにトランジスタMN32,MN33,MN34,MN35のオン、オフが切り替わり、発光素子102へ印加される電圧が入力電圧Vccから抵抗素子R27,R28,R29,R30のいずれか少なくとも1つによる降下電圧に変わることとなる。   Similarly, when the adjustment lead 27b is cut off, the connection between the external lead 22d and the internal lead 28f is cut, so that the wiring b in FIG. 17 is cut. Also in this case, the output of the logic circuit section 103c changes, the transistors MN32, MN33, MN34, and MN35 are turned on and off, and the voltage applied to the light emitting element 102 is changed from the input voltage Vcc to the resistance elements R27, R28, R29, The voltage drops due to at least one of R30.

以上の構成を有するキャップ部材2とプリモールドケース20とは、さらに以下のような特徴を有している。すなわち、キャップ部材2とプリモールドケース20とは、各角部領域3cが各天頂部24aよりも面積が幾分大きい大きさに形成されている。そのため、キャップ部材2の嵌込部5をプリモールドケース20の凹部26に嵌め込み、係合凸部24に係合凹部9の角部領域3cを載置して、プリモールドケース20上にキャップ部材2を載置したときに、プリモールドケース20とキャップ部材2との間に隙間が生まれ、各係合凸部24および周壁部25と、係合凹部9との間にスペース部10を確保することができる(図1参照)。したがって、半導体発光装置1は、キャップ部材2をプリモールドケース20に固定する前に、嵌込部5を凹部26に嵌め込み、係合凸部24に角部領域3cを載置した状態で、スペース部10を用いてプリモールドケース20上でキャップ部材2を動かし、キャップ部材2の位置を変えることができる。すなわち、スペース部10はプリモールドケース20上でキャップ部材2の位置を変更する余地を半導体発光装置1に与える猶予スペース(いわゆるあそび)として機能する。   The cap member 2 and the premolded case 20 having the above configuration further have the following characteristics. That is, the cap member 2 and the pre-molded case 20 are formed such that each corner region 3c has a slightly larger area than each zenith portion 24a. Therefore, the fitting portion 5 of the cap member 2 is fitted into the concave portion 26 of the pre-molded case 20, and the corner region 3 c of the engaging concave portion 9 is placed on the engaging convex portion 24, and the cap member is placed on the pre-molded case 20. When 2 is placed, a gap is created between the pre-molded case 20 and the cap member 2, and a space portion 10 is secured between each engagement convex portion 24 and the peripheral wall portion 25 and the engagement concave portion 9. (See FIG. 1). Therefore, the semiconductor light emitting device 1 is configured so that the fitting portion 5 is fitted in the concave portion 26 and the corner region 3c is placed on the engaging convex portion 24 before the cap member 2 is fixed to the premolded case 20. The position of the cap member 2 can be changed by moving the cap member 2 on the pre-molded case 20 using the part 10. That is, the space portion 10 functions as a grace space (so-called play) that gives the semiconductor light emitting device 1 room for changing the position of the cap member 2 on the pre-molded case 20.

(半導体発光装置の製造方法)
半導体発光装置1は、以上の構成を有するキャップ部材2とプリモールドケース20とを用いて以下の手順にしたがって製造されている。
(Method for manufacturing semiconductor light emitting device)
The semiconductor light emitting device 1 is manufactured according to the following procedure using the cap member 2 and the premolded case 20 having the above configuration.

まず、上述した構成を有するキャップ部材2とプリモールドケース20とを用意する。   First, the cap member 2 and the premold case 20 having the above-described configuration are prepared.

そして、図16(A)に示すように、プリモールドケース20の上側からキャップ部材2をファイバガイド部4が発光素子102の搭載箇所に対応した位置に配置されるように位置合わせして嵌込部5をプリモールドケース20の凹部26に嵌め込む。このとき、プリモールドケース20の各係合凸部24における天頂部24aにキャップ部材2の4つの角部領域3cを載置して、キャップ部材2をプリモールドケース20に載置する。すると、上述したとおり、各係合凸部24および周壁部25と係合凹部9との間にスペース部10が確保されるため、各係合凸部24に角部領域3cを載置したままプリモールドケース20上におけるキャップ部材2の位置を変えることができる。また、同時に、各係合凸部24の湾曲状側面24bに係合凹部9の曲面状係合面5aを接触させることによって、各係合凸部24に係合凹部9を係合させることもできる。こうして、キャップ部材2とプリモールドケース20とは、プリモールドケース20上でキャップ部材2を動かせてしかも動かせる範囲が一定の範囲内に収まり、その範囲内での仮の位置決めがなされた(仮位置決めが行われた)仮位置決め状態となる。   Then, as shown in FIG. 16A, the cap member 2 is aligned and fitted from the upper side of the pre-molded case 20 so that the fiber guide portion 4 is disposed at a position corresponding to the mounting position of the light emitting element 102. The part 5 is fitted into the recess 26 of the premolded case 20. At this time, the four corner regions 3 c of the cap member 2 are placed on the zenith portion 24 a of each engagement convex portion 24 of the pre-mold case 20, and the cap member 2 is placed on the pre-mold case 20. Then, as described above, since the space portion 10 is secured between each engagement convex portion 24 and the peripheral wall portion 25 and the engagement concave portion 9, the corner region 3c is placed on each engagement convex portion 24. The position of the cap member 2 on the premolded case 20 can be changed. At the same time, the engagement concave portion 9 can be engaged with each engagement convex portion 24 by bringing the curved engagement surface 5 a of the engagement concave portion 9 into contact with the curved side surface 24 b of each engagement convex portion 24. it can. Thus, the cap member 2 and the pre-molded case 20 have a range in which the cap member 2 can be moved on the pre-molded case 20 within a certain range, and provisional positioning is performed within the range (temporary positioning). The temporary positioning state is established.

次に、図16(B)に示すようにプリモールドケース20の上側からキャップ部材2のファイバガイド部4に光ファイバ100を挿入し、端部100aを縮径部7に沿って案内させる。   Next, as shown in FIG. 16B, the optical fiber 100 is inserted into the fiber guide portion 4 of the cap member 2 from the upper side of the premolded case 20, and the end portion 100 a is guided along the reduced diameter portion 7.

続いて、ファイバガイド部4の光軸と発光素子102の光軸とを一致させる光軸調整を行う。この光軸調整は外部リード22a,22b,22c,22dから入力電圧Vccや入力信号Sの入力を行うなどして発光素子102を発光させ、キャップ部材2をプリモールドケース20に載置したまま位置を適宜変えながら所定の計測器で光ファイバ100の出力端部(ファイバガイド部4に差し込まれた端部とは反対側の端部)における出力をモニタし、モニタしている出力が最大となる位置を検出する。出力最大となる位置が検出されると、ファイバガイド部4の光軸と発光素子102の光軸とが一致して光軸調整が終了する。   Subsequently, the optical axis adjustment is performed so that the optical axis of the fiber guide portion 4 and the optical axis of the light emitting element 102 coincide with each other. This optical axis adjustment is performed by causing the light emitting element 102 to emit light by inputting the input voltage Vcc and the input signal S from the external leads 22a, 22b, 22c, and 22d, and the cap member 2 being placed on the premolded case 20. The output at the output end of the optical fiber 100 (the end opposite to the end inserted into the fiber guide 4) is monitored with a predetermined measuring instrument while appropriately changing the output, and the monitored output is maximized. Detect position. When the position where the maximum output is detected is detected, the optical axis of the fiber guide portion 4 and the optical axis of the light emitting element 102 coincide with each other, and the optical axis adjustment is completed.

そして、光軸調整を行った後、図16(C)に示すように、キャップ部材2における四隅の各角部領域3cにキャップ部材2を透過可能でプリモールドケース20が吸収可能な所定波長のレーザ光Lをキャップ部材2の側から照射する。すると、キャップ部材2はレーザ光Lを透過可能な光透過性樹脂からなるため、レーザ光Lはキャップ部材2を透過した後、プリモールドケース20に到達する。プリモールドケース20はレーザ光Lを吸収可能な光吸収性樹脂からなるため、キャップ部材2を通って入射されるレーザ光Lを吸収し、その吸収の際の発熱で溶融する。また、発熱したプリモールドケース20の余熱でキャップ部材2も溶融し、双方の樹脂の溶融部分が一体化し、硬化することでキャップ部材2がプリモールドケース20に固定される。   Then, after performing the optical axis adjustment, as shown in FIG. 16C, the cap member 2 has a predetermined wavelength that can be transmitted through the corner portions 3c at the four corners and can be absorbed by the premold case 20. Laser light L is irradiated from the cap member 2 side. Then, since the cap member 2 is made of a light-transmitting resin that can transmit the laser beam L, the laser beam L reaches the premold case 20 after passing through the cap member 2. Since the premold case 20 is made of a light-absorbing resin capable of absorbing the laser light L, the pre-mold case 20 absorbs the laser light L incident through the cap member 2 and is melted by heat generated during the absorption. Further, the cap member 2 is also melted by the remaining heat of the premolded case 20 that generates heat, and the melted portions of both resins are integrated and cured, whereby the cap member 2 is fixed to the premolded case 20.

続いて、外部リード22cを通じて入力される入力電圧Vccによる発光素子102の発光をモニタしながら、必要に応じて調整用リード27a、27bに切り込みを入れるかまたは切除して、外部リード22aと内部リード28eとの接続または外部リード22dと内部リード28fとの接続を切断する。すると、上述のとおり、発光素子102に印加される電圧が変わり、発光素子102の発光強度が変わる。このようにして、発光素子102の発光強度が調整される。発光素子102の発光強度の調整が終了すると、図16(D)に示すように半導体発光装置1が得られる。   Subsequently, while monitoring the light emission of the light emitting element 102 due to the input voltage Vcc input through the external lead 22c, the adjustment leads 27a and 27b are cut or cut as necessary to cut the external lead 22a and the internal lead. The connection with 28e or the connection between the external lead 22d and the internal lead 28f is disconnected. Then, as described above, the voltage applied to the light emitting element 102 changes, and the light emission intensity of the light emitting element 102 changes. In this way, the light emission intensity of the light emitting element 102 is adjusted. When the adjustment of the light emission intensity of the light emitting element 102 is completed, the semiconductor light emitting device 1 is obtained as shown in FIG.

以上のようにして製造される半導体発光装置1はファイバガイド部4の光軸と発光素子102の光軸とを一致させる光軸調整を行え、その後にレーザ溶着によって、キャップ部材2をプリモールドケース20に固定して一体化している。そのため、仮位置決めを行った段階でファイバガイド部4の光軸と発光素子102の光軸とにずれがあったとしても、光軸調整を行うことによってそのずれが解消された上で、キャップ部材2がプリモールドケース20に固定して一体化されている。   The semiconductor light emitting device 1 manufactured as described above can adjust the optical axis so that the optical axis of the fiber guide portion 4 and the optical axis of the light emitting element 102 coincide with each other, and then the cap member 2 is pre-molded by laser welding. It is fixed to 20 and integrated. Therefore, even if there is a deviation between the optical axis of the fiber guide portion 4 and the optical axis of the light emitting element 102 at the stage of temporary positioning, the deviation is eliminated by performing the optical axis adjustment. 2 is fixed to the pre-molded case 20 and integrated.

また、半導体発光装置1は、キャップ部材2をプリモールドケース20に固定してからも、調整用リード27a、27bに切り込みを入れたり、切除したりすることができ、調整用リード27a、27bに切り込みを入れるかまたは切除することによって、発光素子102に印加される電圧を変えて発光素子102の発光強度を変えることができる。調整用リード27a、27bに切り込みを入れたり、切除したりする作業はプリモールドケース20の外側から行えるので、半導体発光装置1は、光ファイバ100と発光素子102との位置合わせを行い、キャップ部材2をプリモールドケース20に固定して組み立て作業を行っても、光ファイバを通して出力を監視しながら発光素子102の発光強度を調整することができる。したがって、半導体発光装置1は、発光強度のばらつきを均一にするのに適した構造を有している。   Further, even after the cap member 2 is fixed to the pre-molded case 20, the semiconductor light emitting device 1 can cut or cut the adjustment leads 27a and 27b, so that the adjustment leads 27a and 27b By cutting or cutting, the voltage applied to the light emitting element 102 can be changed to change the light emission intensity of the light emitting element 102. Since the adjustment leads 27a and 27b can be cut and cut from the outside of the pre-molded case 20, the semiconductor light emitting device 1 aligns the optical fiber 100 and the light emitting element 102, and the cap member Even when the assembly work is performed with 2 fixed to the pre-mold case 20, the light emission intensity of the light emitting element 102 can be adjusted while monitoring the output through the optical fiber. Therefore, the semiconductor light emitting device 1 has a structure suitable for making the variation in the emission intensity uniform.

また、半導体発光装置1は、わずかな光軸のずれもすべて解消可能であり、かつ組み立て完成後はそのようなずれがすべて解消されているから、極めて高い位置合わせ精度が確保されるようになっている。また、各係合凸部24に角部領域3cを載置した状態で、各係合凸部24と周壁部25に係合凹部9を係合させることができるから、凹凸部分を係合させつつプリモールドケース20上でキャップ部材2の位置を変えることができ、キャップ部材2の位置合わせを確実に行えるようになっている。   Further, the semiconductor light emitting device 1 can eliminate all slight optical axis deviations, and all such deviations are eliminated after the assembly is completed, so that extremely high alignment accuracy is ensured. ing. In addition, since the engagement recesses 9 can be engaged with the respective engagement protrusions 24 and the peripheral wall portions 25 in a state where the corner regions 3c are placed on the respective engagement protrusions 24, the uneven portions are engaged. On the other hand, the position of the cap member 2 can be changed on the pre-molded case 20 so that the cap member 2 can be aligned with certainty.

さらに、半導体発光装置1は、キャップ部材2をプリモールドケース20に対して仮位置決め状態とした上で光軸調整を行い、発光素子102の出力が最大となる位置を検出すると、その後は、レーザ溶着によってキャップ部材2をプリモールドケース20に固定するだけで完成する(組み立て作業が完了する)ようになっている。そのため、半導体発光装置1は、高い位置合わせ精度が確保できるだけでなく、組み立て作業を効率よく行えるようになっている。   Further, the semiconductor light emitting device 1 adjusts the optical axis after the cap member 2 is temporarily positioned with respect to the premolded case 20 and detects the position where the output of the light emitting element 102 is maximized. The cap member 2 is completed only by fixing the cap member 2 to the pre-molded case 20 by welding (the assembly operation is completed). Therefore, the semiconductor light emitting device 1 can not only ensure high alignment accuracy, but also can perform assembly work efficiently.

そして、半導体発光装置1は、ファイバガイド部4が縮径部7を有しているので、光ファイバ100を挿入したときに、端部100aが縮径部7に当接して、光ファイバ100の端面が底部8に接触しないようにすることができる。これにより、光ファイバ100の端面の損傷を防止できるようになっている。   In the semiconductor light emitting device 1, since the fiber guide portion 4 has the reduced diameter portion 7, when the optical fiber 100 is inserted, the end portion 100 a comes into contact with the reduced diameter portion 7, and the optical fiber 100 It is possible to prevent the end face from contacting the bottom 8. Thereby, damage to the end face of the optical fiber 100 can be prevented.

しかも、ファイバガイド部4が底部8を有しているため、外部から埃やチリなどの異物がファイバガイド部4を通って素子搭載部23の配置される内部に進入しないようになっている。そのため、例えば半導体発光装置1を自動車に搭載する車載用とした場合、半導体発光装置1の使用環境が屋外になるため、屋内で使用される場合よりも異物の進入排除をより効果的なものとすることができる。   Moreover, since the fiber guide portion 4 has the bottom portion 8, foreign matter such as dust and dust does not enter from the outside through the fiber guide portion 4 into the inside where the element mounting portion 23 is disposed. Therefore, for example, when the semiconductor light emitting device 1 is mounted on an automobile, the usage environment of the semiconductor light emitting device 1 is outdoor, so that foreign matter entry and removal is more effective than when used indoors. can do.

さらに、半導体発光装置1は、嵌込部5の突出幅h1が係合凸部24の突出幅h2よりも大きく(h1>h2)形成されているため、上述のようにしてキャップ部材2をプリモールドケース20上に載置したときに、平面状係合面5bが周壁部25に対面し得るようになっている。そのため、半導体発光装置1は、埃やチリなどの異物がスペース部10を取って内部に進入し難くなっている。   Furthermore, since the protrusion width h1 of the fitting portion 5 is formed larger than the protrusion width h2 of the engagement protrusion 24 (h1> h2), the semiconductor light emitting device 1 pre-caps the cap member 2 as described above. When placed on the mold case 20, the planar engagement surface 5 b can face the peripheral wall portion 25. Therefore, the semiconductor light emitting device 1 is difficult for foreign matters such as dust and dust to enter the space 10.

第2の実施形態
次に、第2の実施形態にかかる半導体発光装置1について、図18、図19を参照して説明する。第2の実施形態にかかる半導体発光装置1は第1の実施形態にかかる半導体発光装置1と比較して、プリモールドケース20の代わりに図18に示すプリモールドケース40を有する点で相違している。プリモールドケース40はプリモールドケース20と比較して、調整用リード27a,27bの代わりに調整用リード37a,37b,37cを有する点、内部リード28e,28fの代わりに内部リード38a,38b,38c,38d,38e,38fを有する点および駆動調整回路103の代わりに駆動調整回路106を有する点で相違し、その他の点は一致している。
Second Embodiment Next, a semiconductor light emitting device 1 according to a second embodiment will be described with reference to FIGS. The semiconductor light emitting device 1 according to the second embodiment is different from the semiconductor light emitting device 1 according to the first embodiment in that it has a premold case 40 shown in FIG. 18 instead of the premold case 20. Yes. Compared to the premold case 20, the premold case 40 has adjustment leads 37a, 37b, 37c instead of the adjustment leads 27a, 27b, and internal leads 38a, 38b, 38c instead of the internal leads 28e, 28f. , 38d, 38e, and 38f, and a drive adjustment circuit 106 instead of the drive adjustment circuit 103, and the other points are the same.

調整用リード37a,37b、37cは、ケース本体部21のうちの外部リード22a,22b,22c,22dと異なる箇所に配置され、それぞれ内部リード38a,38bと、38c,38dと、38e,38fに一端部と他端部とが接続され、その一端部と他端部との間の部分がケース本体部21の外側に張り出している。   The adjustment leads 37a, 37b, and 37c are arranged in different locations from the external leads 22a, 22b, 22c, and 22d in the case body 21, and are respectively connected to the internal leads 38a, 38b, 38c, 38d, and 38e, 38f. One end and the other end are connected, and a portion between the one end and the other end projects to the outside of the case body 21.

駆動調整回路106は、図19に示すような回路構成となっている。駆動調整回路106は、駆動調整回路103と比較して、調整部103bおよび論理回路部103cを有しない点と、抵抗素子R31,R32の代わりに抵抗素子R19,20,21を有する点で相違し、その他の点は一致している。また、図示しないGND端子が内部リード38a,38c,38eに接続され、入力端子Cont1,Cont2,Cont3がそれぞれ内部リード38b,38d,38fに接続されている。   The drive adjustment circuit 106 has a circuit configuration as shown in FIG. The drive adjustment circuit 106 is different from the drive adjustment circuit 103 in that it does not have the adjustment unit 103b and the logic circuit unit 103c, and has resistance elements R19, 20, and 21 instead of the resistance elements R31 and R32. The other points are in agreement. A GND terminal (not shown) is connected to the internal leads 38a, 38c, and 38e, and input terminals Cont1, Cont2, and Cont3 are connected to the internal leads 38b, 38d, and 38f, respectively.

したがって、例えば、内部リード38aと内部リード38bとの接続が切断されるように調整用リード37aに切り込みを入れると、図19において、配線cが切断されることとなる。同様に、調整用リード37b、cに切り込みを入れると、それぞれ図19において、配線d、eが切断される。こうして、駆動調整回路106は、調整用リード37a、37b、37cを切除する等して、発光素子102に印加される電圧を入力電圧Vccから抵抗素子R19,R20,R21のいずれか少なくとも1つによる降下電圧に変えることができる。そのため、本実施の形態にかかる半導体発光装置1も、第1の実施の形態にかかる半導体発光装置1と同様に発光強度を調整し、そのばらつきを均一にするのに適した構造を有している。   Therefore, for example, when the adjustment lead 37a is cut so that the connection between the internal lead 38a and the internal lead 38b is cut, the wiring c is cut in FIG. Similarly, when the adjustment leads 37b and 37c are cut, the wires d and e are cut in FIG. 19, respectively. In this way, the drive adjustment circuit 106 removes the adjustment leads 37a, 37b, 37c, and the like, so that the voltage applied to the light emitting element 102 is changed from the input voltage Vcc to at least one of the resistance elements R19, R20, R21. It can be changed to a voltage drop. Therefore, the semiconductor light emitting device 1 according to the present embodiment also has a structure suitable for adjusting the light emission intensity and making the variation uniform, similarly to the semiconductor light emitting device 1 according to the first embodiment. Yes.

(プリモールドケースおよびキャップ部材の変形例)
本発明における半導体発光装置は、図20〜図24に示すように、上述したキャップ部材1、プリモールドケース20の代わりにキャップ部材12とプリモールドケース30とを有する半導体発光装置11とすることもできる。キャップ部材12は、図21に示すように、キャップ部材2と比較して、嵌込部5を設ける代わりに4つの係合凸部39を各係合凸部24の対応箇所に設けた点で相違し、その他の点は一致している。また、プリモールドケース30は、図22に示すように、プリモールドケース20と比較して、各係合凸部24に係合凹部41を有する点で相違し、その他の点は一致している。
(Modification of pre-molded case and cap member)
20 to 24, the semiconductor light emitting device according to the present invention may be a semiconductor light emitting device 11 having a cap member 12 and a premolded case 30 instead of the cap member 1 and the premolded case 20 described above. it can. As shown in FIG. 21, the cap member 12 is different from the cap member 2 in that four engaging convex portions 39 are provided at corresponding positions of the engaging convex portions 24 instead of providing the fitting portions 5. It is different and other points are the same. Further, as shown in FIG. 22, the premold case 30 is different from the premold case 20 in that each engagement projection 24 has an engagement recess 41, and the other points are the same. .

係合凹部41および係合凸部39は、それぞれ円柱状の穴部および細い棒状の突起であって、互いに凹凸嵌合可能な位置に配置されている。また、図23に示すように係合凹部41の内径w1、深さh3が係合凸部39の直径w2、高さh4よりもそれぞれ大きく(w1>w2、h3>h4)なっている。   The engaging concave portion 41 and the engaging convex portion 39 are respectively a cylindrical hole portion and a thin rod-like protrusion, and are disposed at positions where the concave and convex portions can be fitted to each other. Further, as shown in FIG. 23, the inner diameter w1 and the depth h3 of the engaging concave portion 41 are larger than the diameter w2 and the height h4 of the engaging convex portion 39 (w1> w2, h3> h4), respectively.

このような構成を有する半導体発光装置11は、製造する際、プリモールドケース30の各係合凹部41にキャップ部材2の係合凸部39を嵌め合わせた上で、各係合凸部24にキャップ部材12の矩形状基部3の裏面3bを載置する。すなわち、各係合凸部39と各係合凹部41とが凹凸嵌合するようにして、各係合凸部24に裏面3bを載置すると、係合凹部41の内径w1、深さh3が係合凸部39の直径w2、高さh4よりもそれぞれ大きく(w1>w2、h3>h4)なっているため、図23に示すように、各係合凹部41の内周面と、係合凸部39との間にスペース部29が確保される。このスペース部29が確保されることで、キャップ部材12をプリモールドケース30に固定する前に、各係合凹部41と係合凸部39とを係合したまま、プリモールドケース30上でキャップ部材12の位置を変えることができる。そのため、このようなキャップ部材12とプリモールドケース30とからなる半導体発光装置11も、半導体発光装置1と同様にプリモールドケース30上でキャップ部材12を仮位置決め状態とした上で、上記同様に光軸調整を行い、その後、レーザ溶着でキャップ部材12をプリモールドケース30に固定することができ、さらに必要に応じて調整用リード27a,27bを切断することができる。したがって、半導体発光装置11は、半導体発光装置1と同様に高い位置合わせ精度を確保することができ、組み立て作業を効率よく行え、しかも発光強度を調整することができる。その他にも、半導体発光装置11は半導体発光装置1と同様の作用効果を奏する。   When the semiconductor light emitting device 11 having such a configuration is manufactured, the engaging convex portions 39 of the cap member 2 are fitted into the engaging concave portions 41 of the pre-molded case 30, and the engaging convex portions 24 are then fitted. The back surface 3b of the rectangular base 3 of the cap member 12 is placed. That is, when the back surface 3b is placed on each engaging convex portion 24 so that each engaging convex portion 39 and each engaging concave portion 41 are engaged with each other, the inner diameter w1 and the depth h3 of the engaging concave portion 41 are reduced. Since each of the engaging protrusions 39 is larger than the diameter w2 and height h4 (w1> w2, h3> h4), as shown in FIG. A space portion 29 is secured between the convex portion 39. By securing the space portion 29, the cap member 12 is held on the premold case 30 with the engagement concave portions 41 and the engagement convex portions 39 being engaged before the cap member 12 is fixed to the premold case 30. The position of the member 12 can be changed. Therefore, the semiconductor light emitting device 11 including the cap member 12 and the premolded case 30 is also in the same manner as described above after the cap member 12 is temporarily positioned on the premolded case 30 as in the semiconductor light emitting device 1. After adjusting the optical axis, the cap member 12 can be fixed to the pre-molded case 30 by laser welding, and the adjustment leads 27a and 27b can be cut if necessary. Therefore, the semiconductor light-emitting device 11 can ensure high alignment accuracy similarly to the semiconductor light-emitting device 1, can perform assembly work efficiently, and can adjust light emission intensity. In addition, the semiconductor light emitting device 11 has the same effects as the semiconductor light emitting device 1.

また、本発明における半導体発光装置は、図26〜図29に示すように、上述したキャップ部材2、プリモールドケース20の代わりにキャップ部材52とプリモールドケース60とを有する半導体発光装置51とすることもできる。キャップ部材52は、図27にも示すように、キャップ部材2と比較して、矩形状基部3の裏面3b側に嵌込部5が形成されていない点で相違し、その他の点は一致している。また、プリモールドケース60は図26にも示すように、プリモールドケース20と比較して、ケース本体部21が係合凸部24および周壁部25の代わりに周壁部61および棚部62を有する点と、素子搭載部23がキャップ部材52の矩形状基部3の外形形状よりも幾分大きさの大きい矩形状に形成されている点とで相違し、その他の点は一致している。   Further, the semiconductor light emitting device according to the present invention is a semiconductor light emitting device 51 having a cap member 52 and a premolded case 60 instead of the cap member 2 and the premolded case 20 described above, as shown in FIGS. You can also. As shown in FIG. 27, the cap member 52 is different from the cap member 2 in that the fitting portion 5 is not formed on the back surface 3b side of the rectangular base portion 3, and the other points are the same. ing. In addition, as shown in FIG. 26, the pre-mold case 60 has a case body portion 21 having a peripheral wall portion 61 and a shelf portion 62 instead of the engaging convex portion 24 and the peripheral wall portion 25, as compared with the pre-mold case 20. This is different from the above point in that the element mounting portion 23 is formed in a rectangular shape somewhat larger than the outer shape of the rectangular base portion 3 of the cap member 52, and the other points are the same.

周壁部61は、係合凸部24の高さよりも大きい均一の高さで素子搭載部23の周縁部分に形成されている。棚部62はL字形状を有し、周壁部61の高さ方向中間よりもやや上側の四隅部分に配置されている。   The peripheral wall portion 61 is formed on the peripheral portion of the element mounting portion 23 with a uniform height that is greater than the height of the engaging convex portion 24. The shelf 62 has an L shape and is arranged at the four corners slightly above the middle in the height direction of the peripheral wall 61.

そして、プリモールドケース60は、棚部62が四隅に配置され、しかも素子搭載部23の大きさが矩形状基部3よりも幾分大きいので、キャップ部材52を4つの棚部62に載置することができる。したがって、プリモールドケース60における棚部42が載置受部としての機能を有し、キャップ部材52の矩形状基部3が載置部としての機能を有している。   In the premold case 60, the shelf portions 62 are arranged at the four corners, and the size of the element mounting portion 23 is somewhat larger than that of the rectangular base 3, so that the cap member 52 is placed on the four shelf portions 62. be able to. Therefore, the shelf 42 in the pre-molded case 60 has a function as a placement receiving portion, and the rectangular base 3 of the cap member 52 has a function as a placement portion.

このような構成を有する半導体発光装置51は、製造する際、プリモールドケース60の4つの棚部62にキャップ部材52の矩形状基部3を載置する。すると、素子搭載部23の大きさが矩形状基部3よりも幾分大きいので、矩形状基部3と周壁部61との間にスペース部53を確保することできる。そのため、キャップ部材52をプリモールドケース60に固定する前に、スペース部53を用いてプリモールドケース60上でキャップ部材52を動かし、キャップ部材52の位置を変えることができる。したがって、このようなキャップ部材52とプリモールドケース60とからなる半導体発光装置51も半導体発光装置1と同様にプリモールドケース60上でキャップ部材52を仮位置決め状態とした上で、上記同様に光軸調整を行い、その後、レーザ溶着でキャップ部材52をプリモールドケース60に固定することができ、さらに必要に応じて調整用リード27a,27bを切断することができる。よって、半導体発光装置51は、半導体発光装置1と同様に高い位置合わせ精度を確保することができ、組み立て作業を効率よく行え、しかも発光強度を調整することができる。その他にも半導体発光装置51は半導体発光装置1と同様の作用効果を奏する。   When manufacturing the semiconductor light emitting device 51 having such a configuration, the rectangular base 3 of the cap member 52 is placed on the four shelves 62 of the pre-molded case 60. Then, since the size of the element mounting portion 23 is somewhat larger than the rectangular base portion 3, the space portion 53 can be secured between the rectangular base portion 3 and the peripheral wall portion 61. Therefore, before the cap member 52 is fixed to the pre-mold case 60, the cap member 52 can be moved on the pre-mold case 60 using the space portion 53, and the position of the cap member 52 can be changed. Therefore, the semiconductor light emitting device 51 including the cap member 52 and the premolded case 60 is placed in the temporary positioning state on the premolded case 60 in the same manner as the semiconductor light emitting device 1, and the light is emitted in the same manner as described above. After adjusting the axis, the cap member 52 can be fixed to the pre-mold case 60 by laser welding, and the adjustment leads 27a and 27b can be cut if necessary. Therefore, the semiconductor light-emitting device 51 can ensure high alignment accuracy similarly to the semiconductor light-emitting device 1, can perform assembly work efficiently, and can adjust light emission intensity. In addition, the semiconductor light emitting device 51 has the same effects as the semiconductor light emitting device 1.

(その他の変形例)
半導体発光装置11は、係合凹部41および係合凸部39をそれぞれプリモールドケース30、キャップ部材12が有していたが、係合凹部41および係合凸部39の配置を逆にして、それぞれキャップ部材、プリモールドケースが有するようにしてもよい。
(Other variations)
The semiconductor light emitting device 11 has the engagement recess 41 and the engagement projection 39 in the premold case 30 and the cap member 12, respectively, but the arrangement of the engagement recess 41 and the engagement projection 39 is reversed, You may make it have a cap member and a premold case, respectively.

上述した半導体発光装置1、11、51はキャップ部材2、12、52とプリモールドケース20、40、60とによって構成され、プリモールドケース20、40、60上におけるキャップ部材2、12、52の位置調整を行えるが、本発明における半導体発光装置はキャップ部材がプリモールドケース上に固定されたまま、位置調整が行えない構造のものでもよい。   The semiconductor light emitting devices 1, 11, 51 described above are constituted by the cap members 2, 12, 52 and the premolded cases 20, 40, 60, and the cap members 2, 12, 52 on the premolded cases 20, 40, 60 are arranged. Although the position adjustment can be performed, the semiconductor light emitting device according to the present invention may have a structure in which the position adjustment cannot be performed while the cap member is fixed on the premolded case.

駆動調整回路は、上述した発光素子102を駆動し、印加される電圧を調整できればよく、具体的な回路構成は上述した駆動調整回路103,106には限定されない。   The drive adjustment circuit only needs to drive the light emitting element 102 described above and adjust the applied voltage, and the specific circuit configuration is not limited to the drive adjustment circuits 103 and 106 described above.

上記各半導体発光装置1、11、51はキャップ部材のファイバガイド部4が有底筒状に形成されていたが、ファイバガイド部4の代わりに図24に示すように、底部が開口されているファイバガイド部14としてもよい。このファイバガイド部14を設けると、ファイバガイド部14に挿入される光ファイバの端部を可能なかぎり光半導体素子(発光素子102)に近づけることができ、光ファイバと光半導体素子の間の光の結合効率を高く保つことができる。また、開口されているファイバガイド部14を設けると、光ファイバからの光が直に(キャップ部材を通過することなく)発光素子102に到達し得るようになるから、キャップ部材2、12、52は、光透過性樹脂ではない別の樹脂を用いてもよい。もちろん、光透過性樹脂を用いてもよい。   In each of the semiconductor light emitting devices 1, 11, 51, the fiber guide portion 4 of the cap member is formed in a bottomed cylindrical shape, but the bottom portion is opened as shown in FIG. 24 instead of the fiber guide portion 4. The fiber guide portion 14 may be used. When this fiber guide portion 14 is provided, the end portion of the optical fiber inserted into the fiber guide portion 14 can be brought as close to the optical semiconductor element (light emitting element 102) as possible, and light between the optical fiber and the optical semiconductor element can be obtained. The coupling efficiency can be kept high. Further, when the fiber guide portion 14 that is opened is provided, the light from the optical fiber can reach the light emitting element 102 directly (without passing through the cap member). Alternatively, another resin that is not a light-transmitting resin may be used. Of course, a light transmissive resin may be used.

本発明の第1の実施の形態に係る半導体発光装置を示す平面図である。1 is a plan view showing a semiconductor light emitting device according to a first embodiment of the present invention. 同じく、斜視図である。Similarly, it is a perspective view. 同じく、(A)は正面図、(B)は右側面図である。Similarly, (A) is a front view and (B) is a right side view. 図1のIV-IV線断面図である。It is the IV-IV sectional view taken on the line of FIG. 図1のV-V線断面図である。It is the VV sectional view taken on the line of FIG. 第1の実施の形態に係る半導体発光装置を構成するキャップ部材の裏面からみた斜視図である。It is the perspective view seen from the back surface of the cap member which comprises the semiconductor light-emitting device concerning 1st Embodiment. 同じく、平面図である。Similarly, it is a plan view. 同じく、(A)は右側面図、(B)は正面図である。Similarly, (A) is a right side view and (B) is a front view. 図7のIX-IX線断面図である。It is the IX-IX sectional view taken on the line of FIG. 図7のX−X線断面図である。It is the XX sectional view taken on the line of FIG. 第1の実施の形態に係る半導体発光装置を構成するプリモールドケースの斜視図である。It is a perspective view of the premold case which constitutes the semiconductor light emitting device concerning a 1st embodiment. 同じく、平面図である。Similarly, it is a plan view. 同じく、(A)は右側面図、(B)は正面図である。Similarly, (A) is a right side view and (B) is a front view. 図12のXIV-XIV線断面図である。It is the XIV-XIV sectional view taken on the line of FIG. 図12のXV-XV線断面図である。It is the XV-XV sectional view taken on the line of FIG. 図1に示した半導体発光装置の製造工程を示す斜視図であり、(A)はプリモールドケースにキャップ部材2を載置する工程、(B)は載置したキャップ部材2に光ファイバを挿入する工程、(C)はレーザ溶着をする工程、(D)はキャップ部材2が固定され半導体発光装置FIGS. 2A and 2B are perspective views showing a manufacturing process of the semiconductor light emitting device shown in FIG. 1, where FIG. 1A is a process of placing a cap member 2 on a pre-molded case, and FIG. 2B is an optical fiber inserted into the placed cap member 2. (C) is a step of laser welding, (D) is a semiconductor light emitting device in which the cap member 2 is fixed 第1の実施の形態に係る半導体発光装置に備えられた駆動調整回路の回路図である。It is a circuit diagram of the drive adjustment circuit with which the semiconductor light-emitting device which concerns on 1st Embodiment was equipped. 本発明の第2の実施の形態に係る半導体発光装置のプリモールドケースを示す平面図である。It is a top view which shows the premold case of the semiconductor light-emitting device concerning the 2nd Embodiment of this invention. 第2の実施の形態に係る半導体発光装置に備えられた駆動調整回路の回路図である。It is a circuit diagram of the drive adjustment circuit with which the semiconductor light-emitting device which concerns on 2nd Embodiment was equipped. 変形例に係る半導体発光装置の平面図である。It is a top view of the semiconductor light-emitting device concerning a modification. 同じく、キャップ部材の平面図である。Similarly, it is a top view of a cap member. 同じく、プリモールドケースの平面図である。Similarly, it is a top view of a premold case. 同じく、プリモールドケースの係合凸部と係合凹部とによる凹凸嵌合が形成されている部分を拡大して示す断面図である。Similarly, it is sectional drawing which expands and shows the part in which the uneven | corrugated fitting by the engagement convex part and engagement recessed part of a premold case is formed. 別のキャップ部材を示す断面図である。It is sectional drawing which shows another cap member. (A)は、第1の実施の形態に係る半導体発光装置において、調整用リードに切り込みを入れた状態、(B)は、調整用リードを切除した状態を示す平面図である。(A) is the top view which shows the state which cut the adjustment lead in the semiconductor light-emitting device concerning 1st Embodiment, and (B) is the state which cut off the adjustment lead. 本発明の変形例に係る半導体発光装置を構成するプリモールドケースの斜視図である。It is a perspective view of the premold case which comprises the semiconductor light-emitting device which concerns on the modification of this invention. 同じく、半導体発光装置を構成する示すキャップ部材の斜視図である。Similarly, it is a perspective view of the cap member which comprises a semiconductor light-emitting device. 本発明の変形例に係る半導体発光装置を図26のXXVIII−XXVIII線に対応する部分で切断した断面図である。It is sectional drawing which cut | disconnected the semiconductor light-emitting device which concerns on the modification of this invention in the part corresponding to the XXVIII-XXVIII line of FIG. 同じく、図26のXXIX−XXIX線に対応する部分で切断した断面図である。Similarly, it is sectional drawing cut | disconnected by the part corresponding to the XXIX-XXIX line | wire of FIG.

符号の説明Explanation of symbols

1、11、51…半導体発光装置
2、12、52…キャップ部材
3…矩形状基部、4、14…ファイバガイド部
3c…角部領域、8…底部、9、27…係合凹部
20、30、40、60…プリモールドケース
22a,22b,22c,22d…外部リード
27a,27b…調整用リード
28a,28b,28c,28d…内部リード
28e,28f…内部リード
101…リードフレーム、102…発光素子
103,106…駆動調整回路
DESCRIPTION OF SYMBOLS 1, 11, 51 ... Semiconductor light-emitting device 2, 12, 52 ... Cap member 3 ... Rectangular base part, 4, 14 ... Fiber guide part 3c ... Corner | angular area | region, 8 ... Bottom part, 9, 27 ... Engagement recessed part 20, 30 , 40, 60... Premolded case 22a, 22b, 22c, 22d. External lead 27a, 27b. Adjustment lead 28a, 28b, 28c, 28d. Internal lead 28e, 28f. Internal lead 101 ... Lead frame, 102 ... Light emitting element 103, 106 ... Drive adjustment circuit

Claims (3)

発光素子および該発光素子を駆動するための駆動回路を備え、前記発光素子および前記駆動回路を搭載したリードフレームが成形された封止用樹脂で覆われている半導体発光装置であって、
前記リードフレームの内部リードに一端部が接続されて、他端部が前記内部リードまたは前記リードフレームの外部リードに接続され、かつ前記一端部と他端部との間が前記封止用樹脂の外側に張り出した調整用リードを有し、
前記調整用リードにおける前記封止用樹脂の外側に張り出した部分を切断または切除することによって、前記発光素子に印加される電圧が変わるように構成されていることを特徴とする半導体発光装置。
A semiconductor light emitting device comprising a light emitting element and a drive circuit for driving the light emitting element, wherein a lead frame on which the light emitting element and the drive circuit are mounted is covered with a molded sealing resin,
One end is connected to the internal lead of the lead frame, the other end is connected to the internal lead or the external lead of the lead frame, and the gap between the one end and the other end is made of the sealing resin. It has an adjustment lead that protrudes to the outside,
A semiconductor light-emitting device configured to change a voltage applied to the light-emitting element by cutting or excising a portion of the adjustment lead that protrudes outside the sealing resin.
前記発光素子、前記駆動回路および前記リードフレームが成形された前記封止用樹脂で覆われた構成を有し、前記外部リードおよび前記調整用リードが外側に設けられた樹脂ケースと、該樹脂ケースに載置可能で、前記樹脂ケース上での位置変更可能なキャップ部材とを更に有することを特徴とする請求項1記載の半導体発光装置。   A resin case in which the light emitting element, the drive circuit, and the lead frame are covered with the molded sealing resin, and the external lead and the adjustment lead are provided on the outside; and the resin case The semiconductor light-emitting device according to claim 1, further comprising a cap member that can be placed on the resin case and whose position on the resin case can be changed. 前記キャップ部材が光ファイバを挿入可能なファイバガイド部を有し、
前記樹脂ケースに載置したまま前記キャップ部材を動かして、前記ファイバガイド部の光軸と前記発光素子の光軸とを一致させる光軸調整が行われた後、レーザ溶着によって、前記キャップ部材が前記樹脂ケースに固定されていることを特徴とする請求項1または2記載の半導体発光装置。
The cap member has a fiber guide part into which an optical fiber can be inserted,
The cap member is moved while being placed on the resin case, and after the optical axis adjustment is performed to make the optical axis of the fiber guide portion coincide with the optical axis of the light emitting element, the cap member is moved by laser welding. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is fixed to the resin case.
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JP2011146523A (en) * 2010-01-14 2011-07-28 Panasonic Electric Works Co Ltd Light emitting device

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