JPH0551192B2 - - Google Patents
Info
- Publication number
- JPH0551192B2 JPH0551192B2 JP22023586A JP22023586A JPH0551192B2 JP H0551192 B2 JPH0551192 B2 JP H0551192B2 JP 22023586 A JP22023586 A JP 22023586A JP 22023586 A JP22023586 A JP 22023586A JP H0551192 B2 JPH0551192 B2 JP H0551192B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- frame
- laser diode
- photodiode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光通信用モジユール機能を持つた
半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having a module function for optical communication.
第３図は従来の光通信用モジユールを示す斜視
図である。この図において、２１は樹脂からなる
筺体であり、光フアイバ系に接続される部分であ
る。２２はキヤンタイプのレーザダイオードまた
はLEDであり、筺体２１内に設けられた穴に固
定されている。２３はキヤンタイプのホトダイオ
ードであり、筺体２１内に設けられた穴部に固定
されている。
FIG. 3 is a perspective view showing a conventional optical communication module. In this figure, 21 is a housing made of resin, and is a part connected to the optical fiber system. 22 is a can-type laser diode or LED, and is fixed in a hole provided in the housing 21. 23 is a can-type photodiode, which is fixed in a hole provided in the housing 21. As shown in FIG.
次に動作について説明する。 Next, the operation will be explained.
レーザダイオード２２は外部駆動回路（図示せ
ず）により駆動され、伝送データに従つた電気信
号を光信号に変換する。変換された光信号は光フ
アイバケーブルを通り、相手側の受光部に到達す
る。ホトダイオード２３は、相手側の光送信部よ
り発せられた光信号を光フアイバケーブルを経由
して受光し、その光信号を電気信号に変更し、パ
ソコンまたはコンピユータ等のＩ／Ｏ部へ送る。 The laser diode 22 is driven by an external drive circuit (not shown) and converts an electrical signal according to transmission data into an optical signal. The converted optical signal passes through the optical fiber cable and reaches the light receiving unit on the other side. The photodiode 23 receives an optical signal emitted from an optical transmitter on the other side via an optical fiber cable, converts the optical signal into an electrical signal, and sends the electrical signal to an I/O section of a personal computer or computer.
従来の光通信用モジユールは以上のように、高
価なレーザダイオードまたはLED２２、ホトダ
イオード２３を樹脂からなる筺体２１へ組み込む
構成となつているので、コストが高いこと、およ
び容積が非常に大きくなるの等の問題点があつ
た。
As described above, the conventional optical communication module has a structure in which an expensive laser diode or LED 22 and a photodiode 23 are assembled into the housing 21 made of resin, resulting in high cost and a very large volume. There was a problem.
この発明は、上記のような問題点を解消するた
めになされたもので、超小型化ができるととも
に、低価格な半導体装置を得ることを目的とす
る。 This invention was made to solve the above-mentioned problems, and aims to provide a semiconductor device that can be ultra-miniaturized and is inexpensive.
この発明に係る半導体装置は、レーザダイオー
ドまたはLEDとホトダイオードとを金属フレー
ム上にマウントするとともに、これらの半導体素
子と外部リードとを金属細線等で結線し、全体を
樹脂でモールドしたものである。
The semiconductor device according to the present invention has a laser diode or LED and a photodiode mounted on a metal frame, these semiconductor elements and external leads are connected with thin metal wires, etc., and the entire device is molded with resin.
この発明においては、金属フレーム上にレーザ
ダイオードまたはLEDとホトダイオードとをマ
ウントし、全体を樹脂でモールドしたことから小
型化、低価格化が図れる。
In this invention, a laser diode or LED and a photodiode are mounted on a metal frame, and the entire structure is molded with resin, so that size reduction and cost reduction can be achieved.
この発明の一実施例を第１図について説明す
る。第１図において、１はCuまたはFe−Ni等の
金属からなるフレーム、２，３，４はCuまたは
Fe−Ni等の金属からなるリード、５は送信用の
レーザダイオードまたはLED、６，７はモニタ
用および受信用のホトダイオードＡ、ホトダイオ
ードＢ（これら５，６，７を総称して必要により
半導体素子という）であり、これら半導体素子５
〜７はフレーム１の所定の位置に半田等で接着さ
れている。８はAu等からなる金属細線であり、
半導体素子５〜７の電極（図示せず）とリード２
〜４とを電気的に導通すべく接続している。９は
透明樹脂であり、半導体素子５〜７その他をモー
ルドしている。
An embodiment of the invention will be described with reference to FIG. In Figure 1, 1 is a frame made of metal such as Cu or Fe-Ni, and 2, 3, and 4 are Cu or
Leads made of metal such as Fe-Ni, 5 is a laser diode or LED for transmitting, 6 and 7 are photodiodes A and B for monitoring and reception (these 5, 6, and 7 are collectively referred to as semiconductor elements as necessary). ), and these semiconductor elements 5
7 are bonded to predetermined positions of the frame 1 with solder or the like. 8 is a thin metal wire made of Au etc.
Electrodes (not shown) of semiconductor elements 5 to 7 and leads 2
~4 are connected for electrical continuity. Reference numeral 9 denotes a transparent resin in which the semiconductor elements 5 to 7 and others are molded.
レーザダイオードまたはLED５は、リード２
に印加された電気信号により駆動され、その端面
より光信号を発し、透明樹脂９に接続された光フ
アイバケーブルに伝送する。ホトダイオードＡ６
は、レーザダイオードまたはLED５の端面より
発せられた光信号を捕えて電気信号に変換し、レ
ーザダイオードまたはLED５の発光状態をモニ
タリングしている。 Laser diode or LED5 is lead 2
It is driven by an electric signal applied to it, emits an optical signal from its end face, and transmits it to the optical fiber cable connected to the transparent resin 9. Photodiode A6
captures the optical signal emitted from the end face of the laser diode or LED 5, converts it into an electrical signal, and monitors the light emission state of the laser diode or LED 5.
ホトダイオードＢ７は、透明樹脂９に接続され
た光フアイバケーブルより光信号を受け、電気信
号に変換する。 Photodiode B7 receives an optical signal from an optical fiber cable connected to transparent resin 9, and converts it into an electrical signal.
第２図はこの発明の他の実施例を示す半導体装
置の斜視図である。この実施例の特徴は、フレー
ム１１上に駆動用回路を構成したICチツプ１６
を半田等によつて取り付け、その各電極とリード
１２〜１５間を金属細線８で結線したものであ
り、その動作は第１図の実施例と同様である。 FIG. 2 is a perspective view of a semiconductor device showing another embodiment of the invention. The feature of this embodiment is that an IC chip 16 that constitutes a driving circuit is mounted on the frame 11.
are attached by soldering or the like, and the respective electrodes and the leads 12 to 15 are connected with thin metal wires 8, and the operation thereof is the same as that of the embodiment shown in FIG.
上記各実施例のように、フレーム１および１１
の一部をＬ字状に折り曲げ、この折曲げ部の垂直
面１ａ，１１ａにそれぞれホトダイオードオード
Ｂ７を取り付けることにより一層の小型化が実現
できる。例えば、上記実施例によれば、装置の容
積を従来の1/10以下にすることが可能となる。 As in each of the above embodiments, frames 1 and 11
Further miniaturization can be achieved by bending a part of the L-shape into an L-shape and attaching photodiodes B7 to the vertical surfaces 1a and 11a of this bent portion, respectively. For example, according to the above embodiment, it is possible to reduce the volume of the device to 1/10 or less of that of the conventional device.
この発明は以上説明したように、レーザダイオ
ードまたはLEDとホトダイオード等の半導体素
子を同一フレーム上に取り付け、透明樹脂でモー
ルドしたので、半導体素子として外装していない
チツプを用いて定められた位置に正確に配置して
おくことができる。また、ホトトランジスタはフ
レームの一部に設けたＬ字状の折曲げ部の垂直面
に取付けることで、立体的にフレームを使用でき
るため、装置が極めて小型化できるとともに、安
価に構成できる利点がある。
As explained above, in this invention, semiconductor elements such as a laser diode or LED and a photodiode are mounted on the same frame and molded with transparent resin. It can be placed in In addition, by attaching the phototransistor to the vertical surface of the L-shaped bent part provided in a part of the frame, the frame can be used three-dimensionally, which has the advantage of making the device extremely compact and inexpensive to construct. be.
第１図はこの発明の一実施例を示す半導体装置
の斜視図、第２図はこの発明の他の実施例を示す
半導体装置の斜視図、第３図は従来の半導体装置
の光通信モジユールを示す斜視図である。
図において、１はフレーム、１ａは垂直面、２
〜４はリード、５はレーザダイオードまたは
LED、６はホトダイオードＡ、７はホトダイオ
ードＢ、８は金属細線、９は透明樹脂である。な
お、各図中の同一符号は同一または相当部分を示
す。
FIG. 1 is a perspective view of a semiconductor device showing one embodiment of the present invention, FIG. 2 is a perspective view of a semiconductor device showing another embodiment of the invention, and FIG. 3 is a perspective view of an optical communication module of a conventional semiconductor device. FIG. In the figure, 1 is a frame, 1a is a vertical surface, 2
~4 is lead, 5 is laser diode or
6 is a photodiode A, 7 is a photodiode B, 8 is a thin metal wire, and 9 is a transparent resin. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
レーム上に接着され、前記フレームの一部に形成
したＬ字状の折曲げ部の垂直面に受信用のホトダ
イオードが接着され、各リードと前記送信用のレ
ーザダイオードまたはLEDおよび受信用のホト
ダイオードとがワイヤボンデイングされ、さらに
全体が透明樹脂でモールドされていることを特徴
とする半導体装置。1 A transmitting laser diode or LED is glued onto the frame, a receiving photodiode is glued to the vertical surface of an L-shaped bent part formed in a part of the frame, and each lead and the transmitting laser A semiconductor device characterized in that a diode or LED and a receiving photodiode are wire-bonded, and the whole is molded with transparent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220235A JPS6373678A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220235A JPS6373678A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6373678A JPS6373678A (en) | 1988-04-04 |
| JPH0551192B2 true JPH0551192B2 (en) | 1993-07-30 |
Family
ID=16748006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61220235A Granted JPS6373678A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373678A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0366472B1 (en) * | 1988-10-28 | 1994-01-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser apparatus |
| JPH02125688A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH02125687A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH0523563U (en) * | 1991-07-17 | 1993-03-26 | ソニー株式会社 | Semiconductor laser device |
| EP1020933B1 (en) * | 1999-01-13 | 2003-05-02 | Sharp Kabushiki Kaisha | Photocoupler device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5827952B2 (en) * | 1978-08-24 | 1983-06-13 | ブラウン・アクチエンゲゼルシヤフト | Dry shaver long hair cutter part |
| JPS59119774A (en) * | 1982-12-25 | 1984-07-11 | Toshiba Corp | Photo coupling semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5827952U (en) * | 1981-08-18 | 1983-02-23 | 株式会社東芝 | Optical coupling semiconductor device |
-
1986
- 1986-09-17 JP JP61220235A patent/JPS6373678A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5827952B2 (en) * | 1978-08-24 | 1983-06-13 | ブラウン・アクチエンゲゼルシヤフト | Dry shaver long hair cutter part |
| JPS59119774A (en) * | 1982-12-25 | 1984-07-11 | Toshiba Corp | Photo coupling semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6373678A (en) | 1988-04-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |