JPS6373678A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6373678A JPS6373678A JP61220235A JP22023586A JPS6373678A JP S6373678 A JPS6373678 A JP S6373678A JP 61220235 A JP61220235 A JP 61220235A JP 22023586 A JP22023586 A JP 22023586A JP S6373678 A JPS6373678 A JP S6373678A
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- led
- photodiode
- resin
- leads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- 238000005452 bending Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 14
- 239000002184 metal Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000013307 optical fiber Substances 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 2
- 229910001111 Fine metal Inorganic materials 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光通信用モジュール機能を持った半導体装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device having an optical communication module function.
第３図は従来の光通信用モジュールを示す斜視図である
。この図において、２１は樹脂からなる筐体であり、光
フアイバ系に接続される部分である。２２はキャンタイ
プのレーザダイオードまたはＬＥＤであり、筐体２１内
に設けられた穴に固定されている。２３はキャンタイプ
のホトダイオードであり、筐体２１内に設けられた穴部
に固定されている。FIG. 3 is a perspective view showing a conventional optical communication module. In this figure, 21 is a housing made of resin, and is a part connected to an optical fiber system. 22 is a can-type laser diode or LED, which is fixed in a hole provided in the housing 21. 23 is a can-type photodiode, which is fixed in a hole provided in the housing 21. As shown in FIG.
次に動作について説明する。Next, the operation will be explained.
レーザダイオード２２は外部駆動回路（図示せず）によ
り駆動され、伝送データに従った電気信号を光信号に変
換する。変換された光信号は光フアイバケーブルを通り
、相手側の受光部に到達する。ホトダイオード２３は、
相手側の光送信部より発せられた光信号を光フアイバケ
ーブルを経由して受光し、その光信号を電気信号に変更
し、パソコンまたはコンピュータ等のＩ１０部へ送る。The laser diode 22 is driven by an external drive circuit (not shown) and converts an electrical signal according to transmission data into an optical signal. The converted optical signal passes through the optical fiber cable and reaches the light receiving unit on the other side. The photodiode 23 is
It receives an optical signal emitted from an optical transmitter on the other side via an optical fiber cable, changes the optical signal into an electrical signal, and sends it to the I10 section of a personal computer or computer.
従来の光通信用モジュールは以上のように、高価なレー
ザダイオードまたはＬＥＤ２２．ホトダイオード２３を
樹脂からなる筐体２１へ組み込む構成となっているので
、コストが高いこと、および容積が非常に大きくなる等
の問題点があった。As described above, conventional optical communication modules use expensive laser diodes or LEDs. Since the photodiode 23 is assembled into the housing 21 made of resin, there are problems such as high cost and a very large volume.
この発明は、上記のような問題点を解消するためになさ
れたもので、超小型化ができるとともに、低価格な半導
体装置を得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to provide a semiconductor device that can be ultra-miniaturized and is inexpensive.
この発明に係る半導体装置は、レーザダイオードまたは
ＬＥＤとホトダイオードとを金属フレーム上にマウント
するとともに、これらの半導体素子と外部リードとを金
属細線等で結線し、全体を樹脂でモールドしたものであ
る。The semiconductor device according to the present invention has a laser diode or LED and a photodiode mounted on a metal frame, these semiconductor elements and external leads connected with thin metal wires, etc., and the entire device is molded with resin.
この発明においては、金属フレーム上にレーザダイオー
ドまたはＬＥＤとホトダイオードとをマウントし、全体
を樹脂でモールドしたことから小型化、低価格化が図れ
る。In this invention, a laser diode or LED and a photodiode are mounted on a metal frame, and the entire structure is molded with resin, so that size reduction and cost reduction can be achieved.
この発明の一実施例を第１図について説明する。第１図
において、１はＣｕまたはＦｅ−Ｎｉ等の金属からなる
フレーム、２，３．４はＣｕまたはＦｅ−Ｎｉ等の金属
からなるリード、５はレーザダイオードまたはＬＥＤ、
６，７はホトダイオードＡ、ホトダイオードＢ（これら
５，６．７を総称して必要により半導体素子という）で
あり、これら半導体素子５〜７はフレーム１の所定の位
置に半田等で接着されている。８はＡｕ等からなる金属
細線であり、半導体素子５〜７の電極（図示せず）とリ
ード２〜４とを電気的に導通すべく接続している。９は
透明樹脂であり、半導体素子５〜７その他をモールドし
ている。An embodiment of the invention will be described with reference to FIG. In FIG. 1, 1 is a frame made of metal such as Cu or Fe-Ni, 2, 3.4 are leads made of metal such as Cu or Fe-Ni, 5 is a laser diode or LED,
Reference numerals 6 and 7 denote a photodiode A and a photodiode B (these 5 and 6.7 are collectively referred to as semiconductor elements when necessary), and these semiconductor elements 5 to 7 are bonded to predetermined positions of the frame 1 with solder or the like. . Reference numeral 8 denotes a thin metal wire made of Au or the like, which connects the electrodes (not shown) of the semiconductor elements 5 to 7 and the leads 2 to 4 for electrical continuity. Reference numeral 9 denotes a transparent resin in which the semiconductor elements 5 to 7 and others are molded.
レーザダイオードまたはＬＥＤ５は、リード２に印加さ
れた電気信号により駆動され、その端面より光信号を発
し、透明樹脂９に接続された光フアイバケーブルに伝送
する。ホトダイオードＡ６は、レーザダイオードまたは
ＬＥＤ５の端面より発せられた光信号を捕えて電気信号
に変換し、レーザダイオードまたはＬｉ＝ｎ５の発光状
態をモニタリングしている。The laser diode or LED 5 is driven by an electric signal applied to the lead 2, emits an optical signal from its end face, and transmits it to an optical fiber cable connected to the transparent resin 9. The photodiode A6 captures the optical signal emitted from the end face of the laser diode or LED5, converts it into an electric signal, and monitors the light emission state of the laser diode or Li=n5.
ホトダイオードＢ７は、透明樹脂９に接続された光フア
イバケーブルより光信号を受け、電気信号に変換する。Photodiode B7 receives an optical signal from an optical fiber cable connected to transparent resin 9, and converts it into an electrical signal.
第２図はこの発明の他の実施例を示す半導体装置の斜視
図である。この実施例の特徴は、フレーム１１上に駆動
用回路を構成したＩＣチップ１６を半田等によって取り
付け、その各電極とリード１２〜１５間を金属細線８で
結線したものであり、その動作は第１図の実施例と同様
である。FIG. 2 is a perspective view of a semiconductor device showing another embodiment of the invention. The feature of this embodiment is that an IC chip 16 constituting a driving circuit is mounted on a frame 11 by soldering or the like, and its respective electrodes and leads 12 to 15 are connected with thin metal wires 8. This is similar to the embodiment shown in FIG.
上記各実施例のように、フレーム１および１１の一部を
Ｌ字状に折り曲げ、この折曲げ部の垂直面１ａ、ｌｌａ
にそれぞれホトダイオードＢ７を取り付けることにより
一層の小型化が実現できる０例えば、上記実施例によれ
ば、装置の容積を従来のｌ／１０以下にすることが可能
となる。As in each of the above embodiments, parts of the frames 1 and 11 are bent into an L-shape, and the vertical surfaces 1a and lla of this bent portion are bent.
For example, according to the above embodiment, the volume of the device can be reduced to 1/10 or less of that of the conventional device.
この発明は以上説明したように、レーザダイオードまた
はＬＥＤとホトダイオード等の半導体素子を同一フレー
ム上に取り付け、透明樹脂でモールドしたので、装置が
極めて小型化できるとともに、安価に構成できる利点が
ある。As described above, this invention has the advantage that semiconductor elements such as a laser diode or LED and a photodiode are mounted on the same frame and molded with transparent resin, so that the device can be extremely miniaturized and can be constructed at low cost.
第１図はこの発明の一実施例を示す半導体装置の斜視図
、第２図はこの発明の他の実施例を示す半導体装置の斜
視図、第３図は従来の半導体装置の光通信モジュールを
示す斜視図である。
図において、１はフレーム、ｌａは垂直面、２〜４はリ
ード、５はレーザダイオードまたはＬＥＤ、６はホトダ
イオードＡ、７はホトダイオードＢ、８は金属細線、９
は透明樹脂である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）第１図
９：澄明樹脂
第２図
第３図
り１FIG. 1 is a perspective view of a semiconductor device showing one embodiment of the present invention, FIG. 2 is a perspective view of a semiconductor device showing another embodiment of the invention, and FIG. 3 is a perspective view of an optical communication module of a conventional semiconductor device. FIG. In the figure, 1 is a frame, la is a vertical plane, 2 to 4 are leads, 5 is a laser diode or LED, 6 is a photodiode A, 7 is a photodiode B, 8 is a thin metal wire, and 9
is a transparent resin. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 9: Seimei Resin Figure 2 Figure 3 Diagram 1
Claims (2)
トダイオードを同一フレーム上に接着して各リードとワ
イヤボンディングした後、全体を透明樹脂でモールドし
たことを特徴とする半導体装置。(1) A semiconductor device characterized in that a laser diode or LED and a required number of photodiodes are bonded on the same frame and wire-bonded to each lead, and then the whole is molded with transparent resin.
り曲げ、この折曲げ部の垂直面に取り付けたことを特徴
とする特許請求の範囲第（１）項記載の半導体装置。(2) The semiconductor device according to claim (1), wherein the photodiode is formed by bending a portion of the frame into an L shape and attaching the photodiode to a vertical surface of the bent portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220235A JPS6373678A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220235A JPS6373678A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6373678A true JPS6373678A (en) | 1988-04-04 |
| JPH0551192B2 JPH0551192B2 (en) | 1993-07-30 |
Family
ID=16748006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61220235A Granted JPS6373678A (en) | 1986-09-17 | 1986-09-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6373678A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02125687A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH02125688A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH02191389A (en) * | 1988-10-28 | 1990-07-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPH0523563U (en) * | 1991-07-17 | 1993-03-26 | ソニー株式会社 | Semiconductor laser device |
| EP1020933A1 (en) * | 1999-01-13 | 2000-07-19 | Sharp Kabushiki Kaisha | Photocoupler device, method for fabricating the same, and lead frame for photocoupler device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5827952U (en) * | 1981-08-18 | 1983-02-23 | 株式会社東芝 | Optical coupling semiconductor device |
| JPS59119774A (en) * | 1982-12-25 | 1984-07-11 | Toshiba Corp | Photo coupling semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2836959C2 (en) * | 1978-08-24 | 1983-04-28 | Braun Ag, 6000 Frankfurt | Long hair clip, for dry razors |
-
1986
- 1986-09-17 JP JP61220235A patent/JPS6373678A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5827952U (en) * | 1981-08-18 | 1983-02-23 | 株式会社東芝 | Optical coupling semiconductor device |
| JPS59119774A (en) * | 1982-12-25 | 1984-07-11 | Toshiba Corp | Photo coupling semiconductor device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02191389A (en) * | 1988-10-28 | 1990-07-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
| JPH02125687A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH02125688A (en) * | 1988-11-04 | 1990-05-14 | Sony Corp | Semiconductor laser device |
| JPH0523563U (en) * | 1991-07-17 | 1993-03-26 | ソニー株式会社 | Semiconductor laser device |
| EP1020933A1 (en) * | 1999-01-13 | 2000-07-19 | Sharp Kabushiki Kaisha | Photocoupler device, method for fabricating the same, and lead frame for photocoupler device |
| US6507035B1 (en) | 1999-01-13 | 2003-01-14 | Sharp Kabushiki Kaisha | Photocoupler device, method for fabricating the same, and lead frame for photocoupler device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551192B2 (en) | 1993-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |