JPS62124780A - Optical semiconductor module - Google Patents
Optical semiconductor moduleInfo
- Publication number
- JPS62124780A JPS62124780A JP60263891A JP26389185A JPS62124780A JP S62124780 A JPS62124780 A JP S62124780A JP 60263891 A JP60263891 A JP 60263891A JP 26389185 A JP26389185 A JP 26389185A JP S62124780 A JPS62124780 A JP S62124780A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor element
- insulating substrate
- semiconductor module
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用・分野〕
本発明は、発光または受光用の光半導体モジュールに関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Use/Field of the Invention] The present invention relates to an optical semiconductor module for emitting or receiving light.
従来、この種の光半導体モジュール（Ｇ、Ｄ。 Conventionally, this type of optical semiconductor module (G, D.
Ｋｈｏｅ ｅｔ＋ａ１． “Ｐｒｏｇｒｅｓｓ ｉｎ
Ｍｏｎｏｍｏｄｅ○ｐｔｉｃａｌ −Ｆｉｂｅｒ
Ｉｎｔｅｒｃｏｎｎｅｃｔｉｏｎ Ｄｅｖｉｃｅｓ
”、アイ・イー・イー・イー、ジャーナル・オブ・ライ
トウニイブ・チクノロシイ、ＶＯｌ、ＬＴ−２、Ｎα３
、ｐ 、 ２１７ （１９８４） ）では、半導体素子
のマウント方法や半導体素子と光ファイバとの結合につ
いては詳細に検討されているが、モジュールの電気的実
装方法の問題を認識していない。Khoe et+a1. “Progress in
Monomode○ptical -Fiber
Interconnection Devices
”, I.E.I., Journal of Light University Chikunoroshii, VOl, LT-2, Nα3
, p. 217 (1984)) discusses in detail the method of mounting semiconductor elements and the coupling of semiconductor elements with optical fibers, but does not recognize the problem of the method of electrically mounting modules.
従来の光半導体モジュールでは、第６図に示すように、
光半導体モジュールを駆動させる電極リード３がモジュ
ール筐体であるパッケージ２の側面中央部から外部に出
ている。上記モジュールを基板に実装する場合には、第
７図に示すように基板４上のパタン５に電極リード３を
はんだ付けするため、上記電極リード３を曲げる必要が
ある。In the conventional optical semiconductor module, as shown in Fig. 6,
Electrode leads 3 for driving the optical semiconductor module extend outside from the center of the side surface of the package 2, which is a module housing. When mounting the module on a board, the electrode leads 3 must be bent to solder them to the pattern 5 on the board 4 as shown in FIG.
このように実装を行うと電極リード３の長さが長くなり
、電極リード３に付随するインダクタンスが増大する。When the electrode lead 3 is mounted in this manner, the length of the electrode lead 3 increases, and the inductance associated with the electrode lead 3 increases.
その結果、上記光半導体モジュールは高周波領域で動作
できない。また光半導体モジュールの従来例における断
面図を第８図に示す。As a result, the optical semiconductor module cannot operate in a high frequency region. Further, a cross-sectional view of a conventional example of an optical semiconductor module is shown in FIG.
第８図において、３′はパッケージ２と電気的に接続さ
れた電極リード、６はキャップ７につけられたガラス等
の透明な窓、８は発光または受光機能を有する半導体素
子でいわゆる光半導体素子、９は上記光半導体素子８と
電極リード３とを電気的に接続するためのボンディング
ワイヤ、１０は電極リード３とパッケージ２とを電気的
に絶縁するための絶縁物である。上記モジュールを基板
実装する場合、電極リード３および３′を短かくしても
、モジュール内における電極リード部分のインダクタン
スおよび絶縁物１０を介して電極リード３とパッケージ
２との間に生じるキャパシタンスによって、上記光半導
体モジュールも高周波領域で動作することができない。In FIG. 8, 3' is an electrode lead electrically connected to the package 2, 6 is a transparent window such as glass attached to the cap 7, and 8 is a semiconductor element having a light emitting or light receiving function, which is a so-called optical semiconductor element. 9 is a bonding wire for electrically connecting the optical semiconductor element 8 and the electrode lead 3, and 10 is an insulator for electrically insulating the electrode lead 3 and the package 2. When the above module is mounted on a board, even if the electrode leads 3 and 3' are shortened, the above-mentioned optical Semiconductor modules also cannot operate in the high frequency range.
本発明は、電気的実装方法を考慮し、かつ高周波領域で
の動作が可能な光半導体モジュールを得ることを目的と
する。An object of the present invention is to obtain an optical semiconductor module that takes electrical packaging methods into consideration and is capable of operating in a high frequency region.
本発明による光半導体モジュールは、発光または受光機
能を有する光半導体素子を含む光半導体モジュールにお
いて、絶縁性基板の一方の面に光半導体素子を直接また
はサブマウントを介して固着し、上記光半導体素子に電
気信号を加えるため、あるいは電気信号を取出すための
電極リードを、上記絶縁性基板の他方の面に設けたこと
により、電極リードは光半導体モジュールの底面から外
部に出るため、トランジスタ、ＩＣ１抵抗などを搭載し
た基板上に電気的に実装する場合は、上記光半導体モジ
ュールの電極リードを基板上にはんだ付けするだけで固
定が可能になる。しかも上記電極リードは光半導体モジ
ュールの底面から出ているため、その長さははんだ付け
に必要な長さだけでよく、寄生インダクタンスを極力抑
えることができるので、上記光半導体モジュールは高速
動作が可能になる。The optical semiconductor module according to the present invention includes an optical semiconductor element having a light emitting or light receiving function, in which the optical semiconductor element is fixed to one surface of an insulating substrate directly or via a submount, and the optical semiconductor element is fixed to one surface of an insulating substrate. By providing an electrode lead for applying an electric signal to or taking out an electric signal on the other side of the insulating substrate, the electrode lead exits from the bottom of the optical semiconductor module, so that the transistor, IC1 resistor When electrically mounting the optical semiconductor module on a board on which the optical semiconductor module is mounted, the optical semiconductor module can be fixed simply by soldering the electrode leads of the optical semiconductor module onto the board. Moreover, since the electrode leads come out from the bottom of the optical semiconductor module, their length is only required for soldering, and parasitic inductance can be suppressed as much as possible, allowing the optical semiconductor module to operate at high speed. become.
つぎに本発明の実施例を図面とともに説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明による光半導体モジュールの第１実施例
を示す図で、（ａ）は正面図、（ｂ）および（ｃ）は側
面図、（ｄ）は底面図、（ｅ）は拡大断面図、第２図は
本発明の第２実施例の断面図。FIG. 1 shows a first embodiment of an optical semiconductor module according to the present invention, in which (a) is a front view, (b) and (c) are side views, (d) is a bottom view, and (e) is an enlarged view. FIG. 2 is a cross-sectional view of a second embodiment of the present invention.
第３図は本発明の第３実施例を示す断面図、第４図は本
発明の第４実施例を示す断面図、第５図は本発明の第５
実施例を示す断面図である。3 is a sectional view showing a third embodiment of the present invention, FIG. 4 is a sectional view showing a fourth embodiment of the invention, and FIG. 5 is a sectional view showing a fifth embodiment of the invention.
It is a sectional view showing an example.
第１図において、光半導体素子８は表面にメタライズを
施したサブマウント１１にダイボンドされている。光は
キャップ７に付けられたガラス等の透明な窓６を介して
外部に取出し、または取込むようになっている。光半導
体素子の正、負の電極はボンディングワイヤ９．９′を
介してメタライズを施した絶縁性基板１５上の電気的パ
タン１２．１２′に接続されるが、上記絶縁性基板１５
は、スルーホール１３．１３’を介してそれぞれの電極
リード３．３′と電気的に接続されている。上記パッケ
ージの底には電極リード３．３′の他に、ケースにアー
スをとる必要があるときに使用できるように、金属パタ
ン１４が設けられている。In FIG. 1, an optical semiconductor element 8 is die-bonded to a submount 11 whose surface is metallized. Light is taken out or taken in to the outside through a transparent window 6 made of glass or the like attached to the cap 7. The positive and negative electrodes of the optical semiconductor element are connected to electrical patterns 12 and 12' on a metallized insulating substrate 15 via bonding wires 9 and 9'.
are electrically connected to the respective electrode leads 3.3' via through holes 13.13'. In addition to the electrode leads 3.3', the bottom of the package is provided with a metal pattern 14 for use when it is necessary to ground the case.
上記光半導体モジュールの構造では、電極り−ド３，３
′がパッケージの底面から出ているため、平らな電気部
品搭載用基板への実装が容易になる。In the structure of the optical semiconductor module described above, the electrode electrodes 3, 3
′ protrudes from the bottom of the package, making it easy to mount it on a flat board for mounting electrical components.
また電極リード３．３′は上記基板へのはんだ付けに必
要な長さだけでよく、そのため寄生インダクタンスを小
さくすることができる。またスルーホール１３．１３′
を用いているため、パッケージ内部での寄生インダクタ
ンスも小さく、本光半導体モジュールは高周波動作が可
能であるという効果を有する。Furthermore, the electrode leads 3.3' need only have the length necessary for soldering to the substrate, so that parasitic inductance can be reduced. Also through hole 13.13'
Because of this, the parasitic inductance inside the package is also small, and this optical semiconductor module has the advantage of being capable of high frequency operation.
第２図に示す第２実施例では、光の取出しまたは取込み
用に光ファイバ１を用い、該光ファイバ１はキャップ７
を貫通して外に出ている。In the second embodiment shown in FIG. 2, an optical fiber 1 is used for extracting or introducing light, and the optical fiber 1 is connected to a cap 7
It passes through and comes out.
第３図に示す第３実施例は、光半導体素子８と光ファイ
バ１との光学的結合用のレンズ１６をパッケージの中に
組込んでいる。この他に球レンズだけでなく、光アイソ
レータや偏光子、ハーフミラ−などの光学部品を、光半
導体素子８と光ファイバ１との間に設置して、モジュー
ルとすることもできる。In the third embodiment shown in FIG. 3, a lens 16 for optically coupling the optical semiconductor element 8 and the optical fiber 1 is incorporated into the package. In addition to this, not only a ball lens but also optical components such as an optical isolator, a polarizer, and a half mirror can be installed between the optical semiconductor element 8 and the optical fiber 1 to form a module.
第４図に示す第４実施例は、光半導体素子８と電極リー
ド３．３′を電気的に接続するために、スルーホールで
はなく絶縁性基板１５の端面に至るまで連続的にメタラ
イズを施して電気的パタン１２．１２’を形成し、上記
パタン１２．１２′と電極リード３．３′とをそれぞれ
溶接している。本実施例ではキャップ７を導電性材料で
形成しているため、上記パタン１２．１２′の絶縁用に
絶縁物１７を用いている。In the fourth embodiment shown in FIG. 4, in order to electrically connect the optical semiconductor element 8 and the electrode leads 3.3', metallization is continuously applied to the end surface of the insulating substrate 15 instead of through holes. Then, an electrical pattern 12.12' is formed, and the pattern 12.12' and the electrode lead 3.3' are welded to each other. In this embodiment, since the cap 7 is made of a conductive material, the insulator 17 is used to insulate the patterns 12 and 12'.
第５図に示す第５実施例は、光半導体素子８が固着して
いる絶縁性基板１５の同一面上に集積回路１８をダイボ
ンディングしており、このチップをボンディングワイヤ
９ ＃ 、 ９ ＩＬＬにより電気的パタン１２．１２
″に接続している６本実施例において５例えば光半導体
素子８に半導体レーザ、集積回路として上記半導体レー
ザ用の駆動回路ＩＣを用いたとすると、上記半導体レー
ザと駆動回路ＩＣが非常に近接して配置されるため、こ
れらの各素子の相互配線に伴う寄生リアクタンス成分を
小さくすることができ、半導体レーザを高速変調できる
という効果がある。In the fifth embodiment shown in FIG. 5, an integrated circuit 18 is die-bonded on the same surface of an insulating substrate 15 to which an optical semiconductor element 8 is fixed, and this chip is bonded by bonding wires 9 # and 9 ILL. Electrical pattern 12.12
In this embodiment, for example, if a semiconductor laser is used as the optical semiconductor element 8, and the driver circuit IC for the semiconductor laser is used as an integrated circuit, the semiconductor laser and the driver circuit IC are very close to each other. Because of this arrangement, the parasitic reactance component associated with the interconnection of these elements can be reduced, and the semiconductor laser can be modulated at high speed.
上記のように本発明による光半導体モジュールは、発光
または受光機能を有する光半導体素子を含む光半導体モ
ジュールにおいて、絶縁性基板の一方の面に光半導体素
子を直接またはサブマウントを介して固着し、上記光半
導体素子に電気信号を加えるため、あるいは電気信号を
取出すための電極リードを、上記絶縁性基板の他方の面
に設けたことにより、光半導体素子の電極に至るまでの
光半導体モジュールに付随する寄生リアクタンス成分を
極力抑えることができるため、従来の光半導体モジュー
ルでは動作不可能であったＧＨｚ帯の動作が可能になり
、また、絶縁性基板にあけたスルーホールと電極リード
とが溶接などによって接続されるため、気密封止が可能
になり、光半導体素子を保護する効果がある。As described above, the optical semiconductor module according to the present invention includes an optical semiconductor element having a light emitting or light receiving function, in which the optical semiconductor element is fixed to one surface of an insulating substrate directly or via a submount, By providing an electrode lead on the other surface of the insulating substrate for applying an electric signal to the optical semiconductor element or for taking out an electric signal, it is attached to the optical semiconductor module up to the electrode of the optical semiconductor element. Since the parasitic reactance component caused by the insulating substrate can be suppressed as much as possible, it is possible to operate in the GHz band, which was impossible with conventional optical semiconductor modules. Since they are connected by , airtight sealing is possible, which has the effect of protecting the optical semiconductor element.
第１図は本発明による光半導体モジュールの第１実施例
を示す図で、（ａ）は正面図、（ｂ）および（ｃ）は側
面図、（ｄ）は底面図、（ｅ）は拡大断面図、第２図は
本発明の第２実施例を示す断面図、第３図は本発明の第
３実施例を示す断面図、第４図は本発明の第４実施例を
示す断面図、第５図は本発明の第５実施例を示す断面図
、第６図は従来の光半導体モジュールの外観図、第７図
は上記モジュールの基板実装状態を示す図、第８図は従
来の他の光半導体モジュールの断面図である。FIG. 1 shows a first embodiment of an optical semiconductor module according to the present invention, in which (a) is a front view, (b) and (c) are side views, (d) is a bottom view, and (e) is an enlarged view. 2 is a sectional view showing a second embodiment of the invention, FIG. 3 is a sectional view showing a third embodiment of the invention, and FIG. 4 is a sectional view showing a fourth embodiment of the invention. , FIG. 5 is a sectional view showing a fifth embodiment of the present invention, FIG. 6 is an external view of a conventional optical semiconductor module, FIG. 7 is a view showing the above module mounted on a board, and FIG. FIG. 3 is a cross-sectional view of another optical semiconductor module.
Claims (6)
光半導体モジュールにおいて、絶縁性基板の一方の面に
光半導体素子を直接またはサブマウントを介して固着し
、上記光半導体素子に電気信号を加えるため、あるいは
電気信号を取出すための電極リードを、上記絶縁性基板
の他方の面に設けたことを特徴とする光半導体モジュー
ル。(1) In an optical semiconductor module that includes an optical semiconductor element having a light emitting or light receiving function, the optical semiconductor element is fixed to one surface of an insulating substrate directly or via a submount, and an electrical signal is applied to the optical semiconductor element. An optical semiconductor module characterized in that an electrode lead for transmitting or extracting an electric signal is provided on the other surface of the insulating substrate.
ールを介して、上記光半導体素子と接続されていること
を特徴とする特許請求の範囲第１項に記載した光半導体
モジュール。(2) The optical semiconductor module according to claim 1, wherein the electrode lead is connected to the optical semiconductor element via a through hole provided in an insulating substrate.
板の側壁にかけて設けた電気的パタンを介して上記光半
導体素子と接続されていることを特徴とする特許請求の
範囲第１項に記載した光半導体モジュール。(3) The electrode lead is connected to the optical semiconductor element through an electrical pattern provided from an insulating substrate to a side wall of the insulating substrate. The optical semiconductor module described.
設けた光ファイバと、光学的に結合されていることを特
徴とする特許請求の範囲第１項ないし第３項のいずれか
に記載した光半導体モジュール。(4) The optical semiconductor element according to any one of claims 1 to 3, wherein the optical semiconductor element is optically coupled to an optical fiber provided in the optical semiconductor module. semiconductor module.
光学部品を介在させていることを特徴とする特許請求の
範囲第４項に記載した光半導体モジュール。(5) Between the optical fiber and the optical semiconductor element,
The optical semiconductor module according to claim 4, characterized in that an optical component is interposed.
電子回路または集積回路を設けたことを特徴とする特許
請求の範囲第１項ないし第５項のいずれかに記載した光
半導体モジュール。(6) The insulating substrate is placed on the fixing surface of the optical semiconductor element,
An optical semiconductor module according to any one of claims 1 to 5, characterized in that an electronic circuit or an integrated circuit is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60263891A JPS62124780A (en) | 1985-11-26 | 1985-11-26 | Optical semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60263891A JPS62124780A (en) | 1985-11-26 | 1985-11-26 | Optical semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62124780A true JPS62124780A (en) | 1987-06-06 |
Family
ID=17395689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60263891A Pending JPS62124780A (en) | 1985-11-26 | 1985-11-26 | Optical semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62124780A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999062150A2 (en) * | 1998-05-27 | 1999-12-02 | Infineon Technologies Ag | Housing arrangement for a laser module |
| EP1094355A1 (en) * | 1999-10-19 | 2001-04-25 | Corning Incorporated | Electrical interconnection of planar lightwave circuits |
| JP2006245336A (en) * | 2005-03-03 | 2006-09-14 | Koito Mfg Co Ltd | Light-emitting device |
| JP2011138970A (en) * | 2009-12-29 | 2011-07-14 | Sharp Corp | Concentrating solar battery, concentrating solar battery module, and method of manufacturing the same |
| JP2014003062A (en) * | 2012-06-15 | 2014-01-09 | Mitsubishi Electric Corp | Optical semiconductor device |
| JP2017063231A (en) * | 2016-12-26 | 2017-03-30 | ローム株式会社 | Light-emitting element package and illumination device |
| US9997682B2 (en) | 2010-12-28 | 2018-06-12 | Rohm Co., Ltd. | Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device |
| WO2021019914A1 (en) * | 2019-07-30 | 2021-02-04 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor laser drive device, electronic apparatus, and method for manufacturing semiconductor laser drive device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050884A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS575083A (en) * | 1980-06-13 | 1982-01-11 | Tokyo Shibaura Electric Co | Display unit |
-
1985
- 1985-11-26 JP JP60263891A patent/JPS62124780A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5050884A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS575083A (en) * | 1980-06-13 | 1982-01-11 | Tokyo Shibaura Electric Co | Display unit |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999062150A2 (en) * | 1998-05-27 | 1999-12-02 | Infineon Technologies Ag | Housing arrangement for a laser module |
| WO1999062150A3 (en) * | 1998-05-27 | 2000-01-13 | Siemens Ag | Housing arrangement for a laser module |
| US6422766B1 (en) | 1998-05-27 | 2002-07-23 | Siemens Aktiengesellschaft Ag | Housing configuration for a laser module |
| EP1094355A1 (en) * | 1999-10-19 | 2001-04-25 | Corning Incorporated | Electrical interconnection of planar lightwave circuits |
| JP2006245336A (en) * | 2005-03-03 | 2006-09-14 | Koito Mfg Co Ltd | Light-emitting device |
| JP2011138970A (en) * | 2009-12-29 | 2011-07-14 | Sharp Corp | Concentrating solar battery, concentrating solar battery module, and method of manufacturing the same |
| US9997682B2 (en) | 2010-12-28 | 2018-06-12 | Rohm Co., Ltd. | Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device |
| JP2014003062A (en) * | 2012-06-15 | 2014-01-09 | Mitsubishi Electric Corp | Optical semiconductor device |
| JP2017063231A (en) * | 2016-12-26 | 2017-03-30 | ローム株式会社 | Light-emitting element package and illumination device |
| WO2021019914A1 (en) * | 2019-07-30 | 2021-02-04 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor laser drive device, electronic apparatus, and method for manufacturing semiconductor laser drive device |
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