JPS56131973A - Luminiscent device - Google Patents

Luminiscent device

Info

Publication number
JPS56131973A
JPS56131973A JP3520580A JP3520580A JPS56131973A JP S56131973 A JPS56131973 A JP S56131973A JP 3520580 A JP3520580 A JP 3520580A JP 3520580 A JP3520580 A JP 3520580A JP S56131973 A JPS56131973 A JP S56131973A
Authority
JP
Japan
Prior art keywords
electric current
luminiscent
led41
output
overcurrent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3520580A
Other languages
Japanese (ja)
Inventor
Masaru Kazumura
Yuichi Shimizu
Haruyoshi Yamanaka
Kazunari Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP3520580A priority Critical patent/JPS56131973A/en
Publication of JPS56131973A publication Critical patent/JPS56131973A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To provide a direct self-control means for the luminiscent output of a device to prevent damage on the device by causing an element having pnpn tetralayer structure to be connected to a luminiscent element of p-n junction. CONSTITUTION:A p layer 31 of pnpn element 35 and a positive electrode of LED41 are joined together on a substrate 42, and n layer 34 of the element 35 and the negative electrode of LED are connected to a conductor 43 which is insulated from the substrate 42. The element 35 is placed at a position which is irradiated by a part of a radiant beam on LED41. Normally the element 35 is located at an action point 55 with less quantity of light, and an electric current almost does not flow. An electric current in the element 35 increases due to an overcurrent, reducing an electric current in LED41 and reducing a luminiscent output. Consequently, LED is protected from the breakdown by an overcurrent and an excess luminiscent output. In addition, once a large volume of electric current flows, the element 35 maintains an action of the large volume of electric current until a power supply is put in OFF position, even if the light is intercepted. The current/voltage characteristics of the element 35 are S shaped as shown by a curve 51 and a switching voltage drops under light irradiation, shifting to a curve 52.
JP3520580A 1980-03-19 1980-03-19 Luminiscent device Pending JPS56131973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3520580A JPS56131973A (en) 1980-03-19 1980-03-19 Luminiscent device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3520580A JPS56131973A (en) 1980-03-19 1980-03-19 Luminiscent device

Publications (1)

Publication Number Publication Date
JPS56131973A true JPS56131973A (en) 1981-10-15

Family

ID=12435347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3520580A Pending JPS56131973A (en) 1980-03-19 1980-03-19 Luminiscent device

Country Status (1)

Country Link
JP (1) JPS56131973A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147476A (en) * 1983-02-10 1984-08-23 Hitachi Koki Co Ltd Protective device for semiconductor laser
JPS59205781A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Semiconductor laser device
JPH01196183A (en) * 1987-12-02 1989-08-07 Asea Brown Boveri Ab Monolithic photocoupler

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147476A (en) * 1983-02-10 1984-08-23 Hitachi Koki Co Ltd Protective device for semiconductor laser
JPS59205781A (en) * 1983-05-09 1984-11-21 Mitsubishi Electric Corp Semiconductor laser device
JPH01196183A (en) * 1987-12-02 1989-08-07 Asea Brown Boveri Ab Monolithic photocoupler

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