JPS59147476A - Protective device for semiconductor laser - Google Patents

Protective device for semiconductor laser

Info

Publication number
JPS59147476A
JPS59147476A JP2178583A JP2178583A JPS59147476A JP S59147476 A JPS59147476 A JP S59147476A JP 2178583 A JP2178583 A JP 2178583A JP 2178583 A JP2178583 A JP 2178583A JP S59147476 A JPS59147476 A JP S59147476A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser
output
level
optical output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2178583A
Other languages
Japanese (ja)
Inventor
Mitsugi Asano
浅野 貢
Yoshifumi Ono
小野 嘉文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koki Holdings Co Ltd
Original Assignee
Hitachi Koki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Koki Co Ltd filed Critical Hitachi Koki Co Ltd
Priority to JP2178583A priority Critical patent/JPS59147476A/en
Publication of JPS59147476A publication Critical patent/JPS59147476A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Combination Of More Than One Step In Electrophotography (AREA)

Abstract

PURPOSE:To prevent the deterioration or breakdown of a semiconductor laser by bypassing currents flowing through the semiconductor laser when overcurrents flow through the semiconductor laser and an optical output from the semiconductor laser intends to exceed a fixed value. CONSTITUTION:When overcurrents intend to flow through a semiconductor laser 1, an optical output from the laser 1 increases. The impedance of a photodiode 2 drops at the same time, and input voltage to a minus terminal for a comparison amplifier 5 drops. When the input voltage drops to a value lower than the threshold voltage of the amplifier 5, an output from the amplifier reaches an ''H'' level, and an output from an AND circuit 7 is brought to an ''L'' level. An inverter 8 receives the signal of the ''L'' level, an output from the inverter is brought to an ''H'' level, and a thyristor 4 is turned ON. Consequently, most of currents flowing the laser 1 by that time are bypassed to the thyristor 4 side, and currents hardly flow through the laser 1. Accordingly, the laser 1 can be protected from breakdown or deterioration.

Description

【発明の詳細な説明】 本発明は、半導体レーザプリンタ等に使用される半導体
レーザの保護装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a protection device for a semiconductor laser used in a semiconductor laser printer or the like.

半導体レーザは、所定の光出力を得るために所定の順方
向電流を流す必要がある。半導体レーザは、従来のカス
レーザに比べて大きく異なる点はレーザ発振を開始する
までの時間が著しく短いことである。従って半導体レー
ザに流す電流を必要に応じてオン、オフすることにより
、高速で光変調が可能である。通常半導体レーザの制御
には、直流′電源を用い、オン、オフの制御や光出力を
一定に保つだめの制御には、トランジスタを用いている
。しかし々から、直流電源の電圧が異常に上昇した場合
や、制御トランジスタが導通破壊した場合や、半導体レ
ーザの光出力コントロール回路が異常になった場合等に
は、半導体レーザに過大な電流が流れ、半導体レーザを
劣化させたり破壊させてしま9゜ 本発明の目的は、半導体レーザに過大電流が流れようと
し、半導体レーザを劣化もしくは破壊させようとした場
合の保穫装置を提供するものである。
A semiconductor laser requires a predetermined forward current to flow in order to obtain a predetermined optical output. The major difference between semiconductor lasers and conventional laser oscillations is that the time required to start laser oscillation is significantly shorter. Therefore, high-speed optical modulation is possible by turning on and off the current flowing through the semiconductor laser as necessary. Normally, a direct current power source is used to control a semiconductor laser, and a transistor is used to control the on/off state and to keep the optical output constant. However, if the voltage of the DC power supply rises abnormally, if the control transistor breaks down, or if the optical output control circuit of the semiconductor laser malfunctions, an excessive current will flow through the semiconductor laser. 9゜An object of the present invention is to provide a protection device in case an excessive current attempts to flow through the semiconductor laser and causes the semiconductor laser to deteriorate or be destroyed. .

本発明は、半導体レーザの光出力を検出し、半導体レー
ザに過大な電流が流れ、該半導体レーザの光出力が所定
の値を越えようとした場合に、半導体レーザに流れる電
流を停止せしめ、半導体し−ザを破壊、然しくけ劣化す
ることを未然に防止させるものである。
The present invention detects the optical output of a semiconductor laser, and when an excessive current flows through the semiconductor laser and the optical output of the semiconductor laser attempts to exceed a predetermined value, the current flowing through the semiconductor laser is stopped. This prevents damage and deterioration of the laser.

以上本発明の一実施例を図を用いて説明する。An embodiment of the present invention will be described above with reference to the drawings.

図においてlは半導体レーザ、3は半導体レーザlを制
御するトランジスタ、10は半導体レーflに流す電流
を制限する可変抵抗、2は半導体レーザlの光出力に反
応する光ダイオード、13は光ダイオード2と直列−に
接続されている固定抵抗器で、光ダイオード2と共に作
用し、半導体レーザ1よりの光出力に応じて、光ダイオ
ード2と固定抵抗器13の接続点の電圧レベルを変化さ
せる役目を和なっている。
In the figure, l is a semiconductor laser, 3 is a transistor that controls the semiconductor laser l, 10 is a variable resistor that limits the current flowing through the semiconductor laser fl, 2 is a photodiode that responds to the optical output of the semiconductor laser l, and 13 is a photodiode 2. A fixed resistor connected in series with the photodiode 2, which acts together with the photodiode 2 and changes the voltage level at the connection point between the photodiode 2 and the fixed resistor 13 in accordance with the optical output from the semiconductor laser 1. It's peaceful.

14はトランジスタ30ベース抵抗である。5は固定抵
抗器Bと光ダイオード2との接点の電圧レベルを検出、
増幅する比較増幅器である。裏と17は比較増幅器5の
増幅率をある値にするための固定抵抗器、9は比較増幅
器の出力側に設けられたダイオード、7は比較増幅器5
の出方と、電源の立ち上がりを示すl” PWRRDY
 J信号との論理積を行なう、;AND回路、8はAN
D回路7の出方を反転増幅するインバータ、4は半導体
レーザ1とトランジスタ3に並列に挿入されているサイ
リスタ、6は比較増幅器50基準電圧を供給するだめの
定電圧ダイオードを示し、bは定電圧ダイオード6へ必
要な電流を流すだめの置屋抵抗器で、■とLは定電圧ダ
イオードの電圧を分圧する分圧器でおシ、分圧比を質え
られるようにするため、■は可変抵抗器、丘は固定抵抗
器を用いている。
14 is a transistor 30 base resistor. 5 detects the voltage level at the contact point between fixed resistor B and photodiode 2;
It is a comparison amplifier that amplifies. 17 is a fixed resistor for setting the amplification factor of the comparison amplifier 5 to a certain value, 9 is a diode provided on the output side of the comparison amplifier, and 7 is the comparison amplifier 5.
"PWRRDY" shows the output of the power supply and the rise of the power supply.
Performs logical product with J signal; AND circuit; 8 is AN
An inverter that inverts and amplifies the output of the D circuit 7, 4 a thyristor inserted in parallel with the semiconductor laser 1 and the transistor 3, 6 a constant voltage diode for supplying the reference voltage of the comparison amplifier 50, and b a constant voltage diode. This is an okiya resistor that allows the necessary current to flow to the voltage diode 6. ■ and L are voltage dividers that divide the voltage of the constant voltage diode, and ■ is a variable resistor in order to be able to control the voltage division ratio. , Hill uses a fixed resistor.

本実施例の回路の動作を簡単に説明する。まず可変抵抗
器叫の抵抗値を最大にしておき、LD0ONT信号を出
しトランジスタ3をオンにする。レーザパワーメータ等
で半導体レーザlの光出力を測定しながら可変抵抗器p
の抵抗値を小さくしていき、半導体レーザlに流す電流
を増加させていく。半導体レーザlの光出力が最大定格
出力以上になる前で設定すべき値にまで上昇した時点で
固定する。その状態で、次は、可変抵抗器11を可変し
、比較増幅器のしきい値電圧を変化さ補、比較増幅器5
の出力が、ローレベルから・・イレベルに変化する点で
固定する。
The operation of the circuit of this embodiment will be briefly explained. First, the resistance value of the variable resistor is maximized, and the LD0ONT signal is output to turn on the transistor 3. While measuring the optical output of the semiconductor laser l with a laser power meter etc., adjust the variable resistor p.
The resistance value of is decreased, and the current flowing through the semiconductor laser I is increased. It is fixed at the time when the optical output of the semiconductor laser l increases to the value to be set before it exceeds the maximum rated output. In this state, the next step is to vary the variable resistor 11 to change the threshold voltage of the comparator amplifier.
The output is fixed at the point where it changes from low level to high level.

以上の町整を実施しておけば、半導体レーザの光出力が
所定の値以上になろうとした場合、比較増幅器5がそれ
を検出することができる。
If the above-mentioned adjustment is carried out, if the optical output of the semiconductor laser is about to exceed a predetermined value, the comparator amplifier 5 can detect it.

例えば、半導体レーザ1を制御するトランジスタ3が導
通破壊をした場合、あるいは、トランジスタ3の制御信
号LD  C0NT信号を発生させる制御回路に異常が
生じ、半導体レーザに過大電流が流れようとした場合、
半導体レーザ1の先出は増大する。それと共に、その光
出力を受けている光ダイオード2のインピーダンスは下
がり、比較増幅器e端子への入力端子は下がる。先に設
定した比較増幅器5のしきい値電圧以下に下がると、比
較増幅器5の出力はローレベルからハイレベルになり、
AND回路7の出力を・・イレベルからローレベルにす
る。インバータ8はこの信号を受けてその出力をハイレ
ベルにし、サイリスタ4をオンにする。サイリスタ4の
順方向電圧は、通常半導体レーザlのj@方向電流より
小さいだめ、今まで半導体レーザに流れていた電流のt
よとんどか、サイリスタ4の側にバイパスされ、半導体
レーザlにはほとんど電流が流れなくなる。従って半導
体レーザを破壊もしくは劣化から守ることが出来る。
For example, if the transistor 3 that controls the semiconductor laser 1 breaks down due to conduction, or if an abnormality occurs in the control circuit that generates the control signal LD C0NT signal of the transistor 3 and an excessive current attempts to flow to the semiconductor laser,
The advance of the semiconductor laser 1 increases. At the same time, the impedance of the photodiode 2 receiving the optical output decreases, and the input terminal to the comparison amplifier e terminal decreases. When the voltage drops below the previously set threshold voltage of the comparison amplifier 5, the output of the comparison amplifier 5 changes from low level to high level.
The output of the AND circuit 7 is changed from high level to low level. Inverter 8 receives this signal, sets its output to high level, and turns on thyristor 4. The forward voltage of the thyristor 4 is usually smaller than the j@direction current of the semiconductor laser l, and the current t that has previously flowed through the semiconductor laser is
It is bypassed to the thyristor 4 side, and almost no current flows through the semiconductor laser l. Therefore, the semiconductor laser can be protected from destruction or deterioration.

図でPWRRDY信号はAND回路70入力信号となっ
ているが、これは電流投入時等電源が不確定な時にサイ
リスタ4をオンさせる信号が出ないようにするだめの信
号であり、LDPWRALM信号は、何等かの原因で半
導体レーザ1に過大電流が流れようとし、比較増幅器が
動作した時に電圧レベルがハイレベルからローレベルに
変わる信号である。本信号は、半導体レーザ制御回路や
駆動回路の異常を装置の本体に知らせる役目を行なうこ
とができる。本体はこの信号を受けて装[を停止させた
り、適当な表示を行なうことも可能であることはいうま
でもない。
In the figure, the PWRRDY signal is an input signal to the AND circuit 70, but this is a signal to prevent the signal that turns on the thyristor 4 from being output when the power supply is uncertain, such as when a current is turned on.The LDPWRALM signal is This is a signal whose voltage level changes from a high level to a low level when an excessive current attempts to flow through the semiconductor laser 1 for some reason and the comparator amplifier operates. This signal can serve to notify the main body of the device of an abnormality in the semiconductor laser control circuit or drive circuit. Needless to say, the main body can receive this signal and stop the device or display an appropriate display.

本発明の一実施例を図に示したが、本実施例では、半導
体レーザlとトランジスタ3と並列にサイリスタ4を接
続しているが、本発明の目的を達成するためには、サイ
リスタでなくてもよく半導体レーザIoJ一方向電圧よ
シも低い順方向電圧を有する素子であれば良い。例えば
、サイリスタの代わりにトランジスタや、リレーの接点
でも同様の目的を達成できることは云うまでもない。ま
たサイリスタやトランジスタの接続場所は、実施例の他
、半導体レーザlに直接並列に接続してもよい。
One embodiment of the present invention is shown in the figure. In this embodiment, a thyristor 4 is connected in parallel with the semiconductor laser l and the transistor 3. However, in order to achieve the object of the present invention, it is necessary to connect the thyristor 4 in parallel with the semiconductor laser l and the transistor 3. Any element may be used as long as it has a forward voltage lower than the one-way voltage of the semiconductor laser IoJ. For example, it goes without saying that the same purpose can be achieved by using a transistor or a relay contact instead of a thyristor. Further, the thyristor and the transistor may be connected directly in parallel to the semiconductor laser l, other than in the embodiment.

本発明によれば、半導体レーザの駆動回路等が異常にな
り、半導体レーザに過大電流が流れ、半導体レーザが劣
化、若しくは破壊することを未然に防止することが出来
る。
According to the present invention, it is possible to prevent a semiconductor laser drive circuit from becoming abnormal, causing an excessive current to flow through the semiconductor laser, and causing the semiconductor laser to deteriorate or be destroyed.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明になる半導体レーザの保護装置の一実施例を
示す回路図である。図において、lは半導体レーザ、2
は光ダイオード、3はトランジスタ、4はサイリスタ、
5は比較増幅器、6は定電圧ダイオード、7はAND回
路、8はインバータ、9はダイオード、■、■は可変抵
抗器、12から侶は固定抵抗器である。
The figure is a circuit diagram showing an embodiment of a semiconductor laser protection device according to the present invention. In the figure, l is a semiconductor laser, 2
is a photodiode, 3 is a transistor, 4 is a thyristor,
5 is a comparator amplifier, 6 is a constant voltage diode, 7 is an AND circuit, 8 is an inverter, 9 is a diode, ■, ■ are variable resistors, and 12 and the other are fixed resistors.

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザと、半導体レーザを駆動するための制御回
路を有する半導体レーザの駆動装置において、半導体レ
ーザの光出力を検出する手段と、該、半導体レーザの光
出力が所定の値以上になった場合に信号を出す検出回路
と、その検出回路よりの出力を受けて、該半導体レーザ
と韮列に挿入された電流バイパス回路をオンにし、該半
導体レーザに流れる′電流を該バイパス回路にバイパス
させ、半導体レーザが許容出来る光出力以上の光出力が
出ないようにした半導体レーザの保護装f。
A semiconductor laser driving device having a semiconductor laser and a control circuit for driving the semiconductor laser, comprising: means for detecting the optical output of the semiconductor laser; A detection circuit that outputs a signal and an output from the detection circuit turn on a current bypass circuit inserted between the semiconductor laser and the diagonal array, thereby bypassing the current flowing through the semiconductor laser to the bypass circuit. A protection device f for a semiconductor laser that prevents the laser from emitting an optical output higher than the allowable optical output.
JP2178583A 1983-02-10 1983-02-10 Protective device for semiconductor laser Pending JPS59147476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2178583A JPS59147476A (en) 1983-02-10 1983-02-10 Protective device for semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2178583A JPS59147476A (en) 1983-02-10 1983-02-10 Protective device for semiconductor laser

Publications (1)

Publication Number Publication Date
JPS59147476A true JPS59147476A (en) 1984-08-23

Family

ID=12064714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2178583A Pending JPS59147476A (en) 1983-02-10 1983-02-10 Protective device for semiconductor laser

Country Status (1)

Country Link
JP (1) JPS59147476A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263182A (en) * 1985-05-15 1986-11-21 Matsushita Electric Works Ltd Driving circuit for laser-diode
JPS61279188A (en) * 1985-06-05 1986-12-09 Olympus Optical Co Ltd Semiconductor laser driving apparatus
WO2001084681A1 (en) * 2000-05-02 2001-11-08 Ic-Haus Gmbh Monolithically integrated switching circuit for regulating the luminous power of a laser diode
WO2002082650A1 (en) * 2001-03-08 2002-10-17 Ic-Haus Gmbh Circuit arrangement for switching a current on and off without the occurrence of overcurrent

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131973A (en) * 1980-03-19 1981-10-15 Matsushita Electronics Corp Luminiscent device
JPS5792884A (en) * 1980-12-01 1982-06-09 Mitsubishi Electric Corp Driving circuit for laser diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131973A (en) * 1980-03-19 1981-10-15 Matsushita Electronics Corp Luminiscent device
JPS5792884A (en) * 1980-12-01 1982-06-09 Mitsubishi Electric Corp Driving circuit for laser diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61263182A (en) * 1985-05-15 1986-11-21 Matsushita Electric Works Ltd Driving circuit for laser-diode
JPS61279188A (en) * 1985-06-05 1986-12-09 Olympus Optical Co Ltd Semiconductor laser driving apparatus
WO2001084681A1 (en) * 2000-05-02 2001-11-08 Ic-Haus Gmbh Monolithically integrated switching circuit for regulating the luminous power of a laser diode
WO2002082650A1 (en) * 2001-03-08 2002-10-17 Ic-Haus Gmbh Circuit arrangement for switching a current on and off without the occurrence of overcurrent
US7138855B2 (en) 2001-03-08 2006-11-21 Schott Ag Circuit arrangement for switching a current of and off without the occurrence of overcurrent

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