JPS5792884A - Driving circuit for laser diode - Google Patents

Driving circuit for laser diode

Info

Publication number
JPS5792884A
JPS5792884A JP55170664A JP17066480A JPS5792884A JP S5792884 A JPS5792884 A JP S5792884A JP 55170664 A JP55170664 A JP 55170664A JP 17066480 A JP17066480 A JP 17066480A JP S5792884 A JPS5792884 A JP S5792884A
Authority
JP
Japan
Prior art keywords
laser diode
current
surge current
circuit
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55170664A
Other languages
Japanese (ja)
Inventor
Kuniyoshi Tamatoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55170664A priority Critical patent/JPS5792884A/en
Publication of JPS5792884A publication Critical patent/JPS5792884A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To avoid a breakdown of a laser diode caused by an overcurrent by a method wherein the current of the laser diode is observed and when the current is going to exceed a specified value, the impedance of the circuit connected to the laser diode in parallel is reduced, so that the surge current is by-passed. CONSTITUTION:A transistor TR17 is connected to a circuit of a laser diode 2 in parallel and the emitter circuit of the TR17 is connected to a resistor 19. When a current begins to flow through the diode 2 by some reason, a voltage is produced between the both ends of an emitter resistor 13 of a compound TR3 by the surge current and the voltage is applied to the TR17 through a base resistor 18. If the circuit is so designed that a base voltage produced by the surge current is saturate enough by the TR17, most of the surge current will flow through the TR17. With the above method the diode 2 is protected from deterioration or breakdown caused by the surge current.
JP55170664A 1980-12-01 1980-12-01 Driving circuit for laser diode Pending JPS5792884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170664A JPS5792884A (en) 1980-12-01 1980-12-01 Driving circuit for laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170664A JPS5792884A (en) 1980-12-01 1980-12-01 Driving circuit for laser diode

Publications (1)

Publication Number Publication Date
JPS5792884A true JPS5792884A (en) 1982-06-09

Family

ID=15909078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170664A Pending JPS5792884A (en) 1980-12-01 1980-12-01 Driving circuit for laser diode

Country Status (1)

Country Link
JP (1) JPS5792884A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118042A (en) * 1982-01-06 1983-07-13 Hitachi Ltd Optical disk device
JPS59147476A (en) * 1983-02-10 1984-08-23 Hitachi Koki Co Ltd Protective device for semiconductor laser
JPS6022747A (en) * 1983-07-19 1985-02-05 Fujitsu Ten Ltd Protecting circuit of laser pickup
JPS6068683A (en) * 1983-08-30 1985-04-19 Yokogawa Hewlett Packard Ltd Laser protecting circuit
JPS6169855U (en) * 1984-10-11 1986-05-13
JPS62130579A (en) * 1985-12-03 1987-06-12 Ricoh Co Ltd Semiconductor laser driving circuit
US5111065A (en) * 1990-03-23 1992-05-05 Massachusetts Institute Of Technology Diode driver circuit utilizing discrete-value DC current source

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118042A (en) * 1982-01-06 1983-07-13 Hitachi Ltd Optical disk device
JPH0563846B2 (en) * 1982-01-06 1993-09-13 Hitachi Ltd
JPS59147476A (en) * 1983-02-10 1984-08-23 Hitachi Koki Co Ltd Protective device for semiconductor laser
JPS6022747A (en) * 1983-07-19 1985-02-05 Fujitsu Ten Ltd Protecting circuit of laser pickup
JPH0527173B2 (en) * 1983-07-19 1993-04-20 Fujitsu Ten Ltd
JPS6068683A (en) * 1983-08-30 1985-04-19 Yokogawa Hewlett Packard Ltd Laser protecting circuit
JPH0348674B2 (en) * 1983-08-30 1991-07-25 Hewlett Packard Co
JPS6169855U (en) * 1984-10-11 1986-05-13
JPH025546Y2 (en) * 1984-10-11 1990-02-09
JPS62130579A (en) * 1985-12-03 1987-06-12 Ricoh Co Ltd Semiconductor laser driving circuit
US5111065A (en) * 1990-03-23 1992-05-05 Massachusetts Institute Of Technology Diode driver circuit utilizing discrete-value DC current source

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