JPS5799764A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5799764A
JPS5799764A JP17528180A JP17528180A JPS5799764A JP S5799764 A JPS5799764 A JP S5799764A JP 17528180 A JP17528180 A JP 17528180A JP 17528180 A JP17528180 A JP 17528180A JP S5799764 A JPS5799764 A JP S5799764A
Authority
JP
Japan
Prior art keywords
layers
electrodes
sio214
layer
end edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17528180A
Other languages
Japanese (ja)
Inventor
Hitoshi Sato
Seiichi Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17528180A priority Critical patent/JPS5799764A/en
Publication of JPS5799764A publication Critical patent/JPS5799764A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To decrease the variation of resistance characteristics in a low concentration layer by arranging an end edge of an electrode, to which bias voltage is applied, onto a high concentration layer through an insulating layer. CONSTITUTION:The P<+> high concentration layers 13 are formed at both ends of the P<-> low concentration layer 12 of an N type Si substrate 11, windows 16 are opened to SiO214, and the Al wiring electrodes 151-153 are shaped. The opposite end edges a1, b2 of the electrodes are not off from the end edges b of the P<+> layers 13, and exist on the P<+> layers 13 through SiO214. According to this constitution, even when the electrodes 151-153 are biased for a long time and positive ions concentrate to the sections C of SiO214 near the end edges a1, a2 of the electrodes 151, 152 biased to negative, the effect concentrates to the regions D of the P<+> layers 13. The resistance characteristics slightly change in the P<-> layer 12 because the P<+> layers 13 are hardly affected by positive ions.
JP17528180A 1980-12-12 1980-12-12 Semiconductor device Pending JPS5799764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17528180A JPS5799764A (en) 1980-12-12 1980-12-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17528180A JPS5799764A (en) 1980-12-12 1980-12-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5799764A true JPS5799764A (en) 1982-06-21

Family

ID=15993379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17528180A Pending JPS5799764A (en) 1980-12-12 1980-12-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5799764A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184910A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
EP1184909A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184910A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
EP1184909A2 (en) * 2000-08-30 2002-03-06 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
EP1184909A3 (en) * 2000-08-30 2004-10-13 Agere Systems Guardian Corporation Method of manufacturing an integrated circuit
EP1184910A3 (en) * 2000-08-30 2004-10-13 Agere Systems Guardian Corporation Field plated resistor with enhanced routing area thereover
KR100870256B1 (en) * 2000-08-30 2008-11-25 에이저 시스템즈 가디언 코포레이션 Field Plated Resistor with Enhanced Routing Area Thereover

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