JPS5349970A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5349970A
JPS5349970A JP12381776A JP12381776A JPS5349970A JP S5349970 A JPS5349970 A JP S5349970A JP 12381776 A JP12381776 A JP 12381776A JP 12381776 A JP12381776 A JP 12381776A JP S5349970 A JPS5349970 A JP S5349970A
Authority
JP
Japan
Prior art keywords
semiconductor device
wirings
decrease
layers
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12381776A
Other languages
Japanese (ja)
Other versions
JPS626348B2 (en
Inventor
Katsutada Horiuchi
Ryuji Kondo
Eiji Takeda
Takaaki Hagiwara
Yokichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12381776A priority Critical patent/JPS5349970A/en
Publication of JPS5349970A publication Critical patent/JPS5349970A/en
Publication of JPS626348B2 publication Critical patent/JPS626348B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To decrease the leak current as well as to increase the anti-insulating voltage for a semiconductor device possessing Si electrode wiring of two layers or more, by forming the insulator thin film between the wirings through the deposit method.
COPYRIGHT: (C)1978,JPO&Japio
JP12381776A 1976-10-18 1976-10-18 Semiconductor device Granted JPS5349970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12381776A JPS5349970A (en) 1976-10-18 1976-10-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12381776A JPS5349970A (en) 1976-10-18 1976-10-18 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60082349A Division JPS60258953A (en) 1985-04-19 1985-04-19 Manufacture of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5349970A true JPS5349970A (en) 1978-05-06
JPS626348B2 JPS626348B2 (en) 1987-02-10

Family

ID=14870068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12381776A Granted JPS5349970A (en) 1976-10-18 1976-10-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5349970A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580980U (en) * 1978-11-28 1980-06-04
JPS55138857A (en) * 1979-04-18 1980-10-30 Fujitsu Ltd Semiconductor device
JPS56114357A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS5772333A (en) * 1980-10-23 1982-05-06 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580980U (en) * 1978-11-28 1980-06-04
JPS55138857A (en) * 1979-04-18 1980-10-30 Fujitsu Ltd Semiconductor device
JPS56114357A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS5772333A (en) * 1980-10-23 1982-05-06 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS626348B2 (en) 1987-02-10

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