JPS56114357A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56114357A
JPS56114357A JP1757480A JP1757480A JPS56114357A JP S56114357 A JPS56114357 A JP S56114357A JP 1757480 A JP1757480 A JP 1757480A JP 1757480 A JP1757480 A JP 1757480A JP S56114357 A JPS56114357 A JP S56114357A
Authority
JP
Japan
Prior art keywords
wiring
layer
film
substrate
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1757480A
Other languages
Japanese (ja)
Inventor
Kenji Koyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1757480A priority Critical patent/JPS56114357A/en
Publication of JPS56114357A publication Critical patent/JPS56114357A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To arrest a dielectric breakdown of a rising part at a position where a wiring is piled by a method wherein an Si layer, the lower layer is made an amorphous Si layer in the semiconductor device provided with electrode wirings in Si 2-layer structure. CONSTITUTION:The electrode wirings in the 2-layer structure are formed as follows on a single crystalline Si substrate 2 on which an element region is formed. That is, a gate oxidized film 4 is cover-attached on the substrate 2, and the lower layer wiring 6 is formed on the oxidized film 4 using the amorphous Si. Then, a heat- treatment is applied to oxidize the surface of the wiring 6 and to cause an interlayer insulating oxide film 8, and those layered body is etched to form a prescribed pattern. Thereafter, a gate oxidized film 10 is newly cover-attached on the substrate 2 exposed while being extended as a film 12 on the pattern 12 also, and the upper layer wiring 14 composed of a polycrystalline Si is formed on the whole surface. In such a manner, the dielectric breakdown is not given rise at the rising part where the upper wiring 14 faces to the lower wiring 6 through the film 12 and accordingly, the device is improved in reliability.
JP1757480A 1980-02-15 1980-02-15 Semiconductor device Pending JPS56114357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1757480A JPS56114357A (en) 1980-02-15 1980-02-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1757480A JPS56114357A (en) 1980-02-15 1980-02-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56114357A true JPS56114357A (en) 1981-09-08

Family

ID=11947676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1757480A Pending JPS56114357A (en) 1980-02-15 1980-02-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56114357A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5349970A (en) * 1976-10-18 1978-05-06 Hitachi Ltd Semiconductor device

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