JPS6413743A - Superconductive wiring structure - Google Patents
Superconductive wiring structureInfo
- Publication number
- JPS6413743A JPS6413743A JP62168719A JP16871987A JPS6413743A JP S6413743 A JPS6413743 A JP S6413743A JP 62168719 A JP62168719 A JP 62168719A JP 16871987 A JP16871987 A JP 16871987A JP S6413743 A JPS6413743 A JP S6413743A
- Authority
- JP
- Japan
- Prior art keywords
- superconductive
- wiring
- conductive material
- layer
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
PURPOSE:To form a highly reliable superconductive wiring suitable for wirings of semiconductor or other devices by making the superconductive wiring consist of a pair of wiring sections, one of which is formed by a superconductive material and the other is formed by a low specific resistance, normal conductive material such as Al and Cu. CONSTITUTION:A LOCOS oxide film 20 is formed onto a semiconductor substrate 10, wherein a source and a drain are formed. A superconductive gate electrode 30 formed by a low specific resistance, normal conductive material, such as Al conductive material 50 and an oxide superconductive layer 60, such as (La1-x'Srx)2CuO4-y, formed thereon, and a lead electrode of a superconductive wiring 40 are formed, extending from the source and the drain, onto the LOCOS oxide film and a gate oxide film. A second superconductive wiring layer 41 is likewise formed thereon with an interlayer insulating film 70 as a separator. An insulating film 71 is formed on the topmost layer. A connecting element in a through hole section which connects the first wiring layer 40 to the second wiring layer 41 is a laminated film consisting of a superconductive material and a normal conductive material such as Al, and is connected to the same material as the superconductive wirings 40 and 41.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62168719A JPS6413743A (en) | 1987-07-08 | 1987-07-08 | Superconductive wiring structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62168719A JPS6413743A (en) | 1987-07-08 | 1987-07-08 | Superconductive wiring structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6413743A true JPS6413743A (en) | 1989-01-18 |
Family
ID=15873174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62168719A Pending JPS6413743A (en) | 1987-07-08 | 1987-07-08 | Superconductive wiring structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6413743A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6445146A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Manufacture of superconducting device |
JPS6445145A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Superconducting device |
JPS6461931A (en) * | 1987-09-02 | 1989-03-08 | Toshiba Corp | Semiconductor device |
JPH0199242A (en) * | 1987-09-09 | 1989-04-18 | American Teleph & Telegr Co <Att> | Semiconductor device having mutual connection of superconductor |
JPH01123438A (en) * | 1987-11-07 | 1989-05-16 | Mitsubishi Electric Corp | Superconducting wiring integrated circuit |
US5418384A (en) * | 1992-03-11 | 1995-05-23 | Sharp Kabushiki Kaisha | Light-source device including a linear array of LEDs |
WO2003091339A1 (en) | 2002-04-24 | 2003-11-06 | Asahi Kasei Chemicals Corporation | Asphalt composition |
JP2008282754A (en) * | 2007-05-14 | 2008-11-20 | Akita Denshi Systems:Kk | Illumination device and manufacturing method therefor |
US9620487B2 (en) | 2012-12-10 | 2017-04-11 | Apple Inc. | Light emitting device reflective bank structure |
-
1987
- 1987-07-08 JP JP62168719A patent/JPS6413743A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6445146A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Manufacture of superconducting device |
JPS6445145A (en) * | 1987-08-13 | 1989-02-17 | Semiconductor Energy Lab | Superconducting device |
JPS6461931A (en) * | 1987-09-02 | 1989-03-08 | Toshiba Corp | Semiconductor device |
JPH0199242A (en) * | 1987-09-09 | 1989-04-18 | American Teleph & Telegr Co <Att> | Semiconductor device having mutual connection of superconductor |
JPH01123438A (en) * | 1987-11-07 | 1989-05-16 | Mitsubishi Electric Corp | Superconducting wiring integrated circuit |
US5418384A (en) * | 1992-03-11 | 1995-05-23 | Sharp Kabushiki Kaisha | Light-source device including a linear array of LEDs |
WO2003091339A1 (en) | 2002-04-24 | 2003-11-06 | Asahi Kasei Chemicals Corporation | Asphalt composition |
JP2008282754A (en) * | 2007-05-14 | 2008-11-20 | Akita Denshi Systems:Kk | Illumination device and manufacturing method therefor |
US9620487B2 (en) | 2012-12-10 | 2017-04-11 | Apple Inc. | Light emitting device reflective bank structure |
US10043784B2 (en) | 2012-12-10 | 2018-08-07 | Apple Inc. | Light emitting device reflective bank structure |
US10784236B2 (en) | 2012-12-10 | 2020-09-22 | Apple Inc. | Light emitting device reflective bank structure |
US11373986B2 (en) | 2012-12-10 | 2022-06-28 | Apple Inc. | Light emitting device reflective bank structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0310108A3 (en) | Interconnection structure of a semiconductor device and method of manufacturing the same | |
EP0952611A3 (en) | Semiconductor device | |
TW376549B (en) | Semiconductor device and manufacture thereof | |
EP0749161A3 (en) | Integrated thin-film solar battery and method of manufacturing the same | |
JPS6413743A (en) | Superconductive wiring structure | |
EP0255911A3 (en) | Metal-dielectric-metal layer structure with low resistance via connections | |
JPS5696850A (en) | Semiconductor device and manufacture thereof | |
JPS6465873A (en) | Manufacture of semiconductor element | |
JPS568871A (en) | Semiconductor memory device | |
HK103693A (en) | Integrated circuit with an electroconductive flat element | |
EP0349703A3 (en) | Multilayer field-effect transistor | |
JPS6428844A (en) | Superconducting wiring | |
EP0134692A3 (en) | Multilayer semiconductor devices with embedded conductor structure | |
EP0347792A3 (en) | Multi-layer wirings on a semiconductor device and fabrication method | |
JPS6417446A (en) | Semiconductor device and manufacture thereof | |
JPS63308924A (en) | Semiconductor device | |
JPH02126665A (en) | Semiconductor device | |
JPS56138946A (en) | Semiconductor device | |
JPS6481250A (en) | Semiconductor memory device having multilayer metal wiring structure | |
JPS57201072A (en) | Semiconductor device and manufacture thereof | |
JPS57166048A (en) | Semiconductor integrated circuit | |
JPS5615052A (en) | Semiconductor device with multilayer wiring | |
JPS5740968A (en) | Semiconductor device | |
JPS57160156A (en) | Semiconductor device | |
JPS57201050A (en) | Multilayer wiring structure |