JPS6445146A - Manufacture of superconducting device - Google Patents

Manufacture of superconducting device

Info

Publication number
JPS6445146A
JPS6445146A JP62202145A JP20214587A JPS6445146A JP S6445146 A JPS6445146 A JP S6445146A JP 62202145 A JP62202145 A JP 62202145A JP 20214587 A JP20214587 A JP 20214587A JP S6445146 A JPS6445146 A JP S6445146A
Authority
JP
Japan
Prior art keywords
thin film
metal
leads
frequency characteristics
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62202145A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62202145A priority Critical patent/JPS6445146A/en
Priority to CN88106054A priority patent/CN1017110B/en
Priority to EP88307561A priority patent/EP0303521A3/en
Publication of JPS6445146A publication Critical patent/JPS6445146A/en
Priority to US07/751,573 priority patent/US5283465A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To contrive improvement in the frequency characteristics of an element by a method wherein a part or the whole of the interwiring of a semiconductor device is formed by superposing an superconducting oxide on a metal or metal semiconductor compound. CONSTITUTION:A conductive thin film is provided on the insulator 2 located on a substrate 1, a thin film of superconducting oxide is provided on the thin film, and leads 10 and 10' of multilayer structure is formed by selectively removing said multilayer thin film. Then, the conductor of the lower part of the leads 10 and 10' and the electrode part on the substrate 1 are coupled with the coupling part 19 of a metal or a metal semiconductor compound or a superconducting material. Accordingly, when a semiconductor device is brought to the temperature of liquid nitrogen, its electrons or hall mobility can be improved three to four times. Also, the electric resistance of said leads and electrode can be made equal to zero, and the R (resistance) in the CR time constant showing the time lag of frequency characteristics can be made zero. As a result, the frequency characteristics can be improved.
JP62202145A 1987-08-13 1987-08-13 Manufacture of superconducting device Pending JPS6445146A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62202145A JPS6445146A (en) 1987-08-13 1987-08-13 Manufacture of superconducting device
CN88106054A CN1017110B (en) 1987-08-13 1988-08-13 Superconducting devices
EP88307561A EP0303521A3 (en) 1987-08-13 1988-08-15 Superconducting device and methods of manufacturing the same
US07/751,573 US5283465A (en) 1987-08-13 1991-08-22 Superconducting lead on integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62202145A JPS6445146A (en) 1987-08-13 1987-08-13 Manufacture of superconducting device

Publications (1)

Publication Number Publication Date
JPS6445146A true JPS6445146A (en) 1989-02-17

Family

ID=16452706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62202145A Pending JPS6445146A (en) 1987-08-13 1987-08-13 Manufacture of superconducting device

Country Status (1)

Country Link
JP (1) JPS6445146A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154613A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Semiconductor device for ultra-low temperature
JPS63318755A (en) * 1987-06-22 1988-12-27 Mitsubishi Electric Corp Semiconductor device
JPS6413743A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Superconductive wiring structure
JPS6427244A (en) * 1987-04-08 1989-01-30 Hitachi Ltd Wiring construction of integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154613A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Semiconductor device for ultra-low temperature
JPS6427244A (en) * 1987-04-08 1989-01-30 Hitachi Ltd Wiring construction of integrated circuit
JPS63318755A (en) * 1987-06-22 1988-12-27 Mitsubishi Electric Corp Semiconductor device
JPS6413743A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Superconductive wiring structure

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