JPS6424476A - Superconducting device - Google Patents

Abstract

PURPOSE:To enable a high-speed signal processing by a method wherein an internal electric field is applied to a superconducting layer through a first and second insulating layers, the electric field is caused to change, the resultant changes in electric current in the superconducting layer is detected through a first and second electrodes, and the characteristics demonstrated by the superconductor in the vicinity of its critical temperature Tc are utilized. CONSTITUTION:A lower insulating layer 3 is formed on a lower electrode 2. A source electrode 6, a drain electrode 7, and a gate electrode 8 are formed near both ends of a superconducting layer 4 and on an upper insulating layer 5. A perovskite-type oxide superconducting layer 4 easily arrives at a critical temperature Tc, where it demonstrates superconductivity. A device of this design is kept at approximately 90 deg.K, a little lower than its critical temperature Tc. A current flows upon application of a voltage between the source electrode 6 and the drain electrode 7. when an electric field is applied between the lower electrode 2 and the gate electrode 8, with the voltage being over a certain value between the source electrode 6 and the drain electrode 7, the current grows smaller. The reduction may result from a change induced by that voltage in the critical temperature Tc of the superconducting layer 4. Accordingly, by using this device, an electrical signal may be processed at a very high speed, on the order of several psec.