JPS57201072A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57201072A JPS57201072A JP8579281A JP8579281A JPS57201072A JP S57201072 A JPS57201072 A JP S57201072A JP 8579281 A JP8579281 A JP 8579281A JP 8579281 A JP8579281 A JP 8579281A JP S57201072 A JPS57201072 A JP S57201072A
- Authority
- JP
- Japan
- Prior art keywords
- film
- molybdenum
- gold
- platinum
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 229910052737 gold Inorganic materials 0.000 abstract 4
- 239000010931 gold Substances 0.000 abstract 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- 239000011733 molybdenum Substances 0.000 abstract 3
- 229910052697 platinum Inorganic materials 0.000 abstract 3
- 229910017052 cobalt Inorganic materials 0.000 abstract 2
- 239000010941 cobalt Substances 0.000 abstract 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 2
- 229910052763 palladium Inorganic materials 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 230000009545 invasion Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having multilayer electrodes including high profit and reliability and a method of manufacturing the same by forming a surface film selected from molybdenum, tungsten or cobalt between interlayer insulating film side and a gold film. CONSTITUTION:First metallic layers 151, 152 are constructed in four-layer structure having a titamium film, a platinum film, a gold film and a surface film selected from molybdenum, tungsten or cobalt from the substrate side, second metallic layers 181, 182 are constructed in three-layer structure having a titanium film 18a, a platinum or palladium intermediate film 18b and a gold film 18c from the interlayer insulating film side 16, and the first and second layers are connected mutually via platinum or palladium filled in hole regions 171, 172 from each other. In this manner, the interlayer insulatin film is covered on the surface film such as molybdenum to avoid the contact of th gold film with the insulating film. Accordingly, invasion of undesired etchant at the time of forming the insulating hole can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8579281A JPS57201072A (en) | 1981-06-05 | 1981-06-05 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8579281A JPS57201072A (en) | 1981-06-05 | 1981-06-05 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57201072A true JPS57201072A (en) | 1982-12-09 |
Family
ID=13868730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8579281A Pending JPS57201072A (en) | 1981-06-05 | 1981-06-05 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57201072A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63302556A (en) * | 1987-06-02 | 1988-12-09 | Nec Corp | Semiconductor device |
| US4974056A (en) * | 1987-05-22 | 1990-11-27 | International Business Machines Corporation | Stacked metal silicide gate structure with barrier |
-
1981
- 1981-06-05 JP JP8579281A patent/JPS57201072A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4974056A (en) * | 1987-05-22 | 1990-11-27 | International Business Machines Corporation | Stacked metal silicide gate structure with barrier |
| JPS63302556A (en) * | 1987-06-02 | 1988-12-09 | Nec Corp | Semiconductor device |
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