JPS6465801A - Resistance element - Google Patents

Resistance element

Info

Publication number
JPS6465801A
JPS6465801A JP62222719A JP22271987A JPS6465801A JP S6465801 A JPS6465801 A JP S6465801A JP 62222719 A JP62222719 A JP 62222719A JP 22271987 A JP22271987 A JP 22271987A JP S6465801 A JPS6465801 A JP S6465801A
Authority
JP
Japan
Prior art keywords
electrode
layer
resistance film
resistance
bondability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62222719A
Other languages
Japanese (ja)
Inventor
Yukio Yoshino
Satoshi Sekimoto
Toru Kasatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP62222719A priority Critical patent/JPS6465801A/en
Publication of JPS6465801A publication Critical patent/JPS6465801A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)
  • Details Of Resistors (AREA)

Abstract

PURPOSE:To improve both bondability and solderability, to strengthen the close adhesiveness using Ti and Pd and to facilitate an etching treatment by a method wherein a resistance film is formed on an insulated substrate, and a three-layer laminated electrode consisting of the first layer of Ti, the second layer of Pd and the third layer of Au is formed on said resistance film. CONSTITUTION:A resistance film 2 is formed on an insulated substrate 1, and a laminated electrode of three-layer structure consisting of the first, the second and the third layers formed on said resistance film 2. A Ti electrode is formed as the first layer 3, a Pd electrode is formed as the second layer 4, and an Au electrode is formed as the third layer 5. Selective etching is conducted on the Ti electrode 3 and the Pd electrode 4 using a resistance pattern by conducting a resistance process and an etching process on the surface of the Au electrode 5 of the third layer 5 using a photoresist. At this time, the close contacting property between the resistance film 2 and the Pd electrode 4 can be improved by the Ti electrode 3, and the bondability and the solderability of the Au electrode 5 can also be improved using the Pd electrode 4 as a barrier.
JP62222719A 1987-09-04 1987-09-04 Resistance element Pending JPS6465801A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62222719A JPS6465801A (en) 1987-09-04 1987-09-04 Resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62222719A JPS6465801A (en) 1987-09-04 1987-09-04 Resistance element

Publications (1)

Publication Number Publication Date
JPS6465801A true JPS6465801A (en) 1989-03-13

Family

ID=16786835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62222719A Pending JPS6465801A (en) 1987-09-04 1987-09-04 Resistance element

Country Status (1)

Country Link
JP (1) JPS6465801A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01289201A (en) * 1988-05-17 1989-11-21 Matsushita Electric Ind Co Ltd Chip resistor and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01289201A (en) * 1988-05-17 1989-11-21 Matsushita Electric Ind Co Ltd Chip resistor and manufacture thereof

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