JPS6449259A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6449259A
JPS6449259A JP20685887A JP20685887A JPS6449259A JP S6449259 A JPS6449259 A JP S6449259A JP 20685887 A JP20685887 A JP 20685887A JP 20685887 A JP20685887 A JP 20685887A JP S6449259 A JPS6449259 A JP S6449259A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor layer
insulating film
contact
coming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20685887A
Other languages
Japanese (ja)
Other versions
JPH0754849B2 (en
Inventor
Masatoshi Fujiwara
Shogo Takahashi
Etsuji Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP20685887A priority Critical patent/JPH0754849B2/en
Publication of JPS6449259A publication Critical patent/JPS6449259A/en
Publication of JPH0754849B2 publication Critical patent/JPH0754849B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To strengthen the close adhesion between an electrode coming into contact with an n-type semiconductor layer and an insulating film by a method wherein the electrode coming into contact with the n-type semiconductor layer is constituted by chromium and gold which have been formed in succession. CONSTITUTION:A semiconductor device is formed by the following two steps: an insulating film 15 which has been formed on an n-type semiconductor layer 14 and where an opening has been made; an electrode 1 which has been formed on the insulating film 15 and which comes into contact with the semiconductor layer 14 via the opening. During this process, the electrode 1 is constituted by chromium and gold which have been formed in succession. Then, the semiconductor layer 14 and the electrode 1 display the ohmic contact; the close adhesion between the electrode 1 and the insulating film 15 is enhanced. By this setup, the close adhesion between the electrode 1 coming into contact with the semiconductor layer 14 and the insulating film 15 is strengthened.
JP20685887A 1987-08-19 1987-08-19 Semiconductor device Expired - Lifetime JPH0754849B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20685887A JPH0754849B2 (en) 1987-08-19 1987-08-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20685887A JPH0754849B2 (en) 1987-08-19 1987-08-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6449259A true JPS6449259A (en) 1989-02-23
JPH0754849B2 JPH0754849B2 (en) 1995-06-07

Family

ID=16530211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20685887A Expired - Lifetime JPH0754849B2 (en) 1987-08-19 1987-08-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0754849B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158160A (en) * 1984-01-28 1985-08-19 Kotobuki Seiyaku Kk Azulene derivative sulfonate, antiulcer and anti-inflammatory agent and preparation thereof
JPS61180761A (en) * 1985-02-06 1986-08-13 Kotobuki Seiyaku Kk 6-substituted azulene derivative sulfonic acid salt, antiulcer agent, and preparation thereof
JP2003060300A (en) * 2001-08-14 2003-02-28 Furukawa Electric Co Ltd:The Surface emitting laser and array thereof
CN101458999A (en) * 2007-10-31 2009-06-17 三洋电机株式会社 Device actuated by key operations

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488072A (en) * 1977-12-26 1979-07-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electrode forming method
JPS6171667A (en) * 1984-09-14 1986-04-12 Sanyo Electric Co Ltd Ohmic electrode for n type gaas

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488072A (en) * 1977-12-26 1979-07-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electrode forming method
JPS6171667A (en) * 1984-09-14 1986-04-12 Sanyo Electric Co Ltd Ohmic electrode for n type gaas

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158160A (en) * 1984-01-28 1985-08-19 Kotobuki Seiyaku Kk Azulene derivative sulfonate, antiulcer and anti-inflammatory agent and preparation thereof
JPS61180761A (en) * 1985-02-06 1986-08-13 Kotobuki Seiyaku Kk 6-substituted azulene derivative sulfonic acid salt, antiulcer agent, and preparation thereof
JP2003060300A (en) * 2001-08-14 2003-02-28 Furukawa Electric Co Ltd:The Surface emitting laser and array thereof
CN101458999A (en) * 2007-10-31 2009-06-17 三洋电机株式会社 Device actuated by key operations

Also Published As

Publication number Publication date
JPH0754849B2 (en) 1995-06-07

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