JPS6057646A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the contact resistance of a connecting section between a Si wiring and an Al wiring by previsouly forming a silicide film to the surface of the Si wiring of a predetermined shape, the inside of a contact section and the back of the Al wiring when an oxide film is applied on the surface of a semiconductor substrate, the Si wiring is formed on the oxide film and the Si wiring is coated with an iner-layer insulating film, the contact section is bored to the insulating film and the Al wiring connected to the Si wiring is shaped. CONSTITUTION:An oxide film 12 is formed on the surface of a semiconductor substrate 11, a Si wiring 13 of a predetermined shape is formed on the oxide film, and a silicide film 14 is applied on the surface of the Si wiring. An exposed section in the film 12 and the whole section on the film 14 are coated with an inter-layer insulating film 15, a contact section 16 is bored to a prescribed region, and the contact section is filled with a silicide film or a metallic film 17. The same film 17 is applied on the film 14 while being brought into contact with the film 17, and an Al wiring 18 is fitted on the film 17. In the constitution, both the films 14 and 17 are constituted by the silicide films consisting of molybdenum, tungsten, tantalum or titanium, and contact resistance is reduced.

Description

[Detailed description of the invention] The present invention relates to a multilayer wiring structure of a semiconductor device.

Conventionally, a multilayer wiring structure in a semiconductor device has most commonly had a structure as shown in FIG.

That is, Si is applied to two oxide films formed on Si substrate 1.
The wiring 3 is formed, and the A
Usually, a t-wiring 6 was formed.

[, Kaji, According to the above-mentioned conventional technology, there was a drawback that the contact resistance at the contact portion of the multilayer wiring was high.

It is an object of the present invention to eliminate such drawbacks of the prior art and to provide a multilayer wiring structure with low contact resistance even in multilayer wiring made of type 51 metals.

The basic concept of the present invention for achieving the above object is that a silicide film such as molybdenum silicide, tungsten silicide, tantalum O silicide, titanium silicide, etc. is formed on the surface of Si wiring in a semiconductor device. When an At wiring is formed on the interlayer insulation film through a contact hole drilled in the interlayer insulation film, molybdenum silicide, tungsten silicide, tantalum silicide, or titanium silicide is added to the contact area and under the d wiring. The present invention is characterized in that it is formed of a silicide film such as -ide, or a metal film such as molysodenum, tungsten, tantalum, or titanium.

FIG. 2 is a sectional view showing an embodiment of the multilayer wiring structure of a semiconductor device according to the present invention. That is, the S♂ wiring 15 is formed on the oxide film 12 formed on the surface of the Si substrate 11.
A first wiring layer in which a silicide film 14 is formed on soil is formed, and contact holes 16 made in the interlayer insulating film 15 are traced through the interlayer insulating film 15 to form silicide or the constituent metals of the silicide film 14. A film 17 consisting of 1,
A wiring made of the a film 18 is completely formed on the film 17.

As in the above invention, the silicide on the underlying Si wiring and the upper A
Forming the silicide or metal film under the t-wiring in series has the effect of reducing the contact resistance of the connection portion. It goes without saying that the present invention is applicable even when the upper layer wiring is not At (EEc).

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a multilayer wiring structure of a semiconductor device according to the prior art, and FIG. 2d is an n-side view of the multilayer wiring structure of a semiconductor device according to an embodiment of the present invention. 1.11...Semiconductor substrate 2.12...Oxide film 5.16...Bi wiring 4.15...Interlayer insulating film 5.16...Contact Part 6.18... Δ Wiring 14... Silicide film 17... Silicide film or metal film or more Applicant Suwa Seikosha Co., Ltd. Attorney ± 17) Superior Affairs

Claims (1)

[Claims] A silicide film such as molybdenum silicide, tungsten silicide, tantalum silicide, or titanium silicide is formed on the surface of the Si wiring, and At is formed on the interlayer insulation film through a contact hole made in the interlayer insulation film.
When forming wiring, molybdenum silicide, tungsten silicide,
Tantalum silicide, silicide film such as titanium silicide, molybdenum, tungsten, etc.
A semiconductor device characterized by being formed with a metal film such as tantalum or titanium.