JPS5760854A - Wiring of semiconductor device - Google Patents
Wiring of semiconductor deviceInfo
- Publication number
- JPS5760854A JPS5760854A JP13513680A JP13513680A JPS5760854A JP S5760854 A JPS5760854 A JP S5760854A JP 13513680 A JP13513680 A JP 13513680A JP 13513680 A JP13513680 A JP 13513680A JP S5760854 A JPS5760854 A JP S5760854A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- layer
- opening
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the disconnection of a wiring layer by leveeing a level difference section, by a method wherein a contact window is formed on a substrate by a resist mask and a metal layer is again deposited in the opening for patterning after lifting off an Al film by depositing electrode metal in the opening. CONSTITUTION:For example, in an electrode formation process of a MOSFET separated by a selective oxide layer 5, an Al film 7 is evaporated for exmaple, without eliminating a resist film 8 after providing a layer insulating film 6 with an opening by using the film 8 as a mask. Next, after lifting off the film 7 on the film 8 by eliminating the film 8, an Al film 70 is again evaporated and electrode wiring layers 71-73 are formed by patterning the film 70. In this way, sharp level difference at the opening section can be reduced by leveeing the level difference section by electrode materials 7 and disconnection at wiring formation can prevented. Stepped disconnection at the upper-layer wiring can also by prevented by applying this method to the formation of lower-layer wiring in multilayer interconnection constitution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13513680A JPS5760854A (en) | 1980-09-30 | 1980-09-30 | Wiring of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13513680A JPS5760854A (en) | 1980-09-30 | 1980-09-30 | Wiring of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5760854A true JPS5760854A (en) | 1982-04-13 |
Family
ID=15144641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13513680A Pending JPS5760854A (en) | 1980-09-30 | 1980-09-30 | Wiring of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5760854A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4902635A (en) * | 1987-12-18 | 1990-02-20 | The Agency Of Industrial Science And Technology | Method for production of compound semicondutor devices |
-
1980
- 1980-09-30 JP JP13513680A patent/JPS5760854A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4902635A (en) * | 1987-12-18 | 1990-02-20 | The Agency Of Industrial Science And Technology | Method for production of compound semicondutor devices |
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