JPS568871A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS568871A
JPS568871A JP8603479A JP8603479A JPS568871A JP S568871 A JPS568871 A JP S568871A JP 8603479 A JP8603479 A JP 8603479A JP 8603479 A JP8603479 A JP 8603479A JP S568871 A JPS568871 A JP S568871A
Authority
JP
Japan
Prior art keywords
electrode
layer
poly
layers
flat plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8603479A
Other languages
Japanese (ja)
Inventor
Hideyuki Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8603479A priority Critical patent/JPS568871A/en
Publication of JPS568871A publication Critical patent/JPS568871A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To achieve high integration of memory devices by superimposing the parallel flat plate capacity of a memory cell on the same part of a semiconductor substrate. CONSTITUTION:A P<->-type substrate 101 is separated by P<+> layer 102 and oxide films 103 and N layers 104a, 104b are provided to connect with Al bit wires through connection windows 120a, 120b. Word wires are formed by providing N layers 105a, 105b and by making poly Si gate electrodes 107a, 107b through oxide thin films 106a, 106b. A poly Si electrode 109 is connected with the N layer 105a through a connection window 108a. Poly Si electrodes 111, 114, 117 are superinposed through insulating films and the electrode 114 is connected with the N layer 105b through a connection hole 108b. The electrode 117 is for shielding purpose. This structure effectively reduces the area per cell and permits high integration because parallel flat plate capacity is of multilayer electrode configuration.
JP8603479A 1979-07-04 1979-07-04 Semiconductor memory device Pending JPS568871A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8603479A JPS568871A (en) 1979-07-04 1979-07-04 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8603479A JPS568871A (en) 1979-07-04 1979-07-04 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS568871A true JPS568871A (en) 1981-01-29

Family

ID=13875376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8603479A Pending JPS568871A (en) 1979-07-04 1979-07-04 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS568871A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104161A (en) * 1982-12-07 1984-06-15 Nec Corp 1-transistor type semiconductor memory
JPS609156A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Semiconductor memory device
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
US4700457A (en) * 1985-03-29 1987-10-20 Mitsubishi Denki Kabushiki Kaisha Method of making multilayer capacitor memory device
JPS63148A (en) * 1986-06-19 1988-01-05 Mitsubishi Electric Corp Semiconductor device
US4735915A (en) * 1983-07-05 1988-04-05 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor random access memory element
EP0295709A2 (en) * 1987-06-17 1988-12-21 Fujitsu Limited Dynamic random access memory device and method of producing the same
JPH0294558A (en) * 1988-09-30 1990-04-05 Hitachi Ltd Semiconductor storage device and manufacture thereof
US5138412A (en) * 1988-09-30 1992-08-11 Kabushiki Kaisha Toshiba Dynamic ram, having an improved large capacitance
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US5731627A (en) * 1996-02-29 1998-03-24 Samsung Electronics Co., Ltd. Power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability
JP2009121312A (en) * 2007-11-14 2009-06-04 Daikin Ind Ltd Radial piston machine and composite radial piston machine

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104161A (en) * 1982-12-07 1984-06-15 Nec Corp 1-transistor type semiconductor memory
JPH04393B2 (en) * 1983-06-29 1992-01-07 Fujitsu Ltd
JPS609156A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Semiconductor memory device
US4735915A (en) * 1983-07-05 1988-04-05 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor random access memory element
US4700457A (en) * 1985-03-29 1987-10-20 Mitsubishi Denki Kabushiki Kaisha Method of making multilayer capacitor memory device
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
JPS63148A (en) * 1986-06-19 1988-01-05 Mitsubishi Electric Corp Semiconductor device
EP0295709A2 (en) * 1987-06-17 1988-12-21 Fujitsu Limited Dynamic random access memory device and method of producing the same
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
JPH0294558A (en) * 1988-09-30 1990-04-05 Hitachi Ltd Semiconductor storage device and manufacture thereof
US5138412A (en) * 1988-09-30 1992-08-11 Kabushiki Kaisha Toshiba Dynamic ram, having an improved large capacitance
US5731627A (en) * 1996-02-29 1998-03-24 Samsung Electronics Co., Ltd. Power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability
US6190948B1 (en) 1996-02-29 2001-02-20 Fairchild Korea Semiconductor Ltd. Method of forming power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability
JP2009121312A (en) * 2007-11-14 2009-06-04 Daikin Ind Ltd Radial piston machine and composite radial piston machine

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