JPS57111046A - Multilayer wiring layer - Google Patents

Multilayer wiring layer

Info

Publication number
JPS57111046A
JPS57111046A JP18511780A JP18511780A JPS57111046A JP S57111046 A JPS57111046 A JP S57111046A JP 18511780 A JP18511780 A JP 18511780A JP 18511780 A JP18511780 A JP 18511780A JP S57111046 A JPS57111046 A JP S57111046A
Authority
JP
Japan
Prior art keywords
layer
film
wiring layer
interlayer insulating
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18511780A
Other languages
Japanese (ja)
Other versions
JPS6158978B2 (en
Inventor
Shiro Takeda
Minoru Nakajima
Toshisuke Kitakoji
Niwaji Majima
Hiroshi Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18511780A priority Critical patent/JPS57111046A/en
Publication of JPS57111046A publication Critical patent/JPS57111046A/en
Publication of JPS6158978B2 publication Critical patent/JPS6158978B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a crack of a wiring layer and to improve the intimate contact of an other layer as an interlayer insulating film with the wiring layer by forming a silicone resin having excellent characteristics as the interlayer insulating film in a multilayer wire of a semiconductor device in two-layer structure with an oxide layer. CONSTITUTION:A polysiliciousiloxane film 3 is formed by a coating method on the first conductor layer 2 on an Si substrate 1, and an SiO2 or Al2O3 film 4 is formed by a sputtering method thereon. The second conductive layer 5 is formed with a contacting hole by photoetching at the films 3 and 4, and the respective layers are thereafter formed by the ordinary method. Accordingly, it can prevent a crack due to heating during processing step by laminating the film 4 on the film 3, thereby improving the intimate contact of other layer.
JP18511780A 1980-12-27 1980-12-27 Multilayer wiring layer Granted JPS57111046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18511780A JPS57111046A (en) 1980-12-27 1980-12-27 Multilayer wiring layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18511780A JPS57111046A (en) 1980-12-27 1980-12-27 Multilayer wiring layer

Publications (2)

Publication Number Publication Date
JPS57111046A true JPS57111046A (en) 1982-07-10
JPS6158978B2 JPS6158978B2 (en) 1986-12-13

Family

ID=16165154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18511780A Granted JPS57111046A (en) 1980-12-27 1980-12-27 Multilayer wiring layer

Country Status (1)

Country Link
JP (1) JPS57111046A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1484428A1 (en) * 2003-06-05 2004-12-08 Maxford Technology Limited A method of anodic oxidation of aluminium alloy films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1484428A1 (en) * 2003-06-05 2004-12-08 Maxford Technology Limited A method of anodic oxidation of aluminium alloy films

Also Published As

Publication number Publication date
JPS6158978B2 (en) 1986-12-13

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