JPS57111046A - Multilayer wiring layer - Google Patents
Multilayer wiring layerInfo
- Publication number
- JPS57111046A JPS57111046A JP18511780A JP18511780A JPS57111046A JP S57111046 A JPS57111046 A JP S57111046A JP 18511780 A JP18511780 A JP 18511780A JP 18511780 A JP18511780 A JP 18511780A JP S57111046 A JPS57111046 A JP S57111046A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- wiring layer
- interlayer insulating
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent a crack of a wiring layer and to improve the intimate contact of an other layer as an interlayer insulating film with the wiring layer by forming a silicone resin having excellent characteristics as the interlayer insulating film in a multilayer wire of a semiconductor device in two-layer structure with an oxide layer. CONSTITUTION:A polysiliciousiloxane film 3 is formed by a coating method on the first conductor layer 2 on an Si substrate 1, and an SiO2 or Al2O3 film 4 is formed by a sputtering method thereon. The second conductive layer 5 is formed with a contacting hole by photoetching at the films 3 and 4, and the respective layers are thereafter formed by the ordinary method. Accordingly, it can prevent a crack due to heating during processing step by laminating the film 4 on the film 3, thereby improving the intimate contact of other layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18511780A JPS57111046A (en) | 1980-12-27 | 1980-12-27 | Multilayer wiring layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18511780A JPS57111046A (en) | 1980-12-27 | 1980-12-27 | Multilayer wiring layer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57111046A true JPS57111046A (en) | 1982-07-10 |
JPS6158978B2 JPS6158978B2 (en) | 1986-12-13 |
Family
ID=16165154
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18511780A Granted JPS57111046A (en) | 1980-12-27 | 1980-12-27 | Multilayer wiring layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57111046A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1484428A1 (en) * | 2003-06-05 | 2004-12-08 | Maxford Technology Limited | A method of anodic oxidation of aluminium alloy films |
-
1980
- 1980-12-27 JP JP18511780A patent/JPS57111046A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1484428A1 (en) * | 2003-06-05 | 2004-12-08 | Maxford Technology Limited | A method of anodic oxidation of aluminium alloy films |
Also Published As
Publication number | Publication date |
---|---|
JPS6158978B2 (en) | 1986-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5696850A (en) | Semiconductor device and manufacture thereof | |
JPS5640260A (en) | Manufacture of semiconductor device | |
JPS57111046A (en) | Multilayer wiring layer | |
JPS5890755A (en) | Semiconductor device | |
JPS561547A (en) | Semiconductor device | |
JPS6417446A (en) | Semiconductor device and manufacture thereof | |
JPS5261980A (en) | Production of semiconductor device | |
JPS55138859A (en) | Multilayer wiring type semiconductor device | |
JPS57103333A (en) | Manufacture of semiconductor device | |
JPS56161655A (en) | Multilayer aluminum wiring for semiconductor device | |
KR930010731B1 (en) | Multi-metal wire method | |
JPS57152144A (en) | Semiconductor device | |
JPS57160156A (en) | Semiconductor device | |
JPS5779648A (en) | Multilayer wiring of semiconductor device | |
JPS56161656A (en) | Manufacture of semiconductor device | |
JPS56138946A (en) | Semiconductor device | |
JPS5797649A (en) | Manufacture of semiconductor device | |
JPS57173958A (en) | Semiconductor ic device | |
JPH0618239B2 (en) | Semiconductor device | |
JPS56114357A (en) | Semiconductor device | |
JPS57106149A (en) | Semiconductor device | |
JPS5630744A (en) | Semiconductor device | |
JPS6450535A (en) | Manufacture of semiconductor device | |
JPS5624939A (en) | Manufacture of semiconductor device | |
JPS63122224A (en) | Thin film hybrid integrated circuit |