JPS6450535A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6450535A JPS6450535A JP20858187A JP20858187A JPS6450535A JP S6450535 A JPS6450535 A JP S6450535A JP 20858187 A JP20858187 A JP 20858187A JP 20858187 A JP20858187 A JP 20858187A JP S6450535 A JPS6450535 A JP S6450535A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- etching rate
- dielectric
- sih4
- dense
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve high-frequency and breakdown strength of a GaAs FET element, obtaining a dielectric film, high in moisture resistance, dense and excellent in quality, by forming a first dielectric layer having a high etching rate on electrodes and superposing thereon other dense dielectric layers having high moisture resistance and a lower etching rate. CONSTITUTION:In manufacture of a GaAs FET element, a method of forming a dielectric film for protecting electrodes 3-5 comprises steps of, after formation of the electrodes 3-5, forming a first dielectric layer 6 having a high etching rate on the electrodes 3-5, and superposing thereon successively one or more dielectric layers 7, 8 which are dense and have high moisture resistance and a lower etching rate. According to an embodiment, an SiN film as the first dielectric layer 6 is formed with a reduced flow ratio of SiH4 and, subsequently, the flow ratio of SiH4 is increased to some extent so that a second dielectric film 7 is formed thereon. The flow of SiH4 is further increased so that a third dielectric film 8 is formed subsequently. After that, windows 9 are formed so that wires can be bonded to the electrodes 3-5 through the windows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20858187A JPS6450535A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20858187A JPS6450535A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450535A true JPS6450535A (en) | 1989-02-27 |
Family
ID=16558553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20858187A Pending JPS6450535A (en) | 1987-08-21 | 1987-08-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450535A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158226A (en) * | 2000-11-21 | 2002-05-31 | Sharp Corp | Silicon nitride solid surface protective film and its manufacturing method as well as hall element |
| WO2007091301A1 (en) * | 2006-02-07 | 2007-08-16 | Fujitsu Limited | Semiconductor device and process for producing the same |
-
1987
- 1987-08-21 JP JP20858187A patent/JPS6450535A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002158226A (en) * | 2000-11-21 | 2002-05-31 | Sharp Corp | Silicon nitride solid surface protective film and its manufacturing method as well as hall element |
| WO2007091301A1 (en) * | 2006-02-07 | 2007-08-16 | Fujitsu Limited | Semiconductor device and process for producing the same |
| US7960763B2 (en) | 2006-02-07 | 2011-06-14 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
| US8163653B2 (en) | 2006-02-07 | 2012-04-24 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
| US8227838B2 (en) | 2006-02-07 | 2012-07-24 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
| US8399361B2 (en) | 2006-02-07 | 2013-03-19 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
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