JPS56103450A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56103450A
JPS56103450A JP556280A JP556280A JPS56103450A JP S56103450 A JPS56103450 A JP S56103450A JP 556280 A JP556280 A JP 556280A JP 556280 A JP556280 A JP 556280A JP S56103450 A JPS56103450 A JP S56103450A
Authority
JP
Japan
Prior art keywords
layer
si3n4
film
psg117
psg109
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP556280A
Other languages
Japanese (ja)
Inventor
Haruo Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP556280A priority Critical patent/JPS56103450A/en
Publication of JPS56103450A publication Critical patent/JPS56103450A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To manufacture the device superior in an ion-proof by a convolution effect of all active regions of the semiconductor which is covered with Si2N4 film and PSG film and a getter effect. CONSTITUTION:A field film oxide 102, a gate film oxide 103, a gate electrode of poly-Si 104 and a wiring 105 are formed on a P type Si substrate. Ions are injected to form N layer 106, 107 and additionally SiO2 108, Si3N4 116 aer layer-built. After the heat treatment being applied to those layers covering the same with the PSG109, openings 110-112 are selectively perforated and P diffusion is applied to the whole surface to turn two layer films of Si3N4 16, SiO2 and a surface of the layer 109 in the openings to PSG117. The layer 109 is made smooth due to the P diffusion and the thick N layer is formed in the opening. The PSG117 is etched to form Al wiring layers 113-115. With this construction, the all active regions are protected by the Si3N4 116 and strengthened against an invasion of the ions from the outside. Further, the device having the inter-layer insulating film superior in the ion-proof in cooperation with the getter effect of the PSG109.
JP556280A 1980-01-21 1980-01-21 Manufacture of semiconductor device Pending JPS56103450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP556280A JPS56103450A (en) 1980-01-21 1980-01-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP556280A JPS56103450A (en) 1980-01-21 1980-01-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56103450A true JPS56103450A (en) 1981-08-18

Family

ID=11614636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP556280A Pending JPS56103450A (en) 1980-01-21 1980-01-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56103450A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139470A (en) * 1982-02-15 1983-08-18 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS61292323A (en) * 1985-04-02 1986-12-23 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Formation of contact window in semiconductor structure
JPH01206650A (en) * 1988-02-13 1989-08-18 Toshiba Corp Manufacture of semiconductor device
JP2003072787A (en) * 2001-08-31 2003-03-12 Yoshino Kogyosho Co Ltd Container with auxiliary lid having sealing function

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139470A (en) * 1982-02-15 1983-08-18 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit
JPS61292323A (en) * 1985-04-02 1986-12-23 ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド Formation of contact window in semiconductor structure
JPH01206650A (en) * 1988-02-13 1989-08-18 Toshiba Corp Manufacture of semiconductor device
JP2003072787A (en) * 2001-08-31 2003-03-12 Yoshino Kogyosho Co Ltd Container with auxiliary lid having sealing function

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