JPS53112688A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53112688A
JPS53112688A JP2770477A JP2770477A JPS53112688A JP S53112688 A JPS53112688 A JP S53112688A JP 2770477 A JP2770477 A JP 2770477A JP 2770477 A JP2770477 A JP 2770477A JP S53112688 A JPS53112688 A JP S53112688A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
layers
holes
steep
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2770477A
Other languages
Japanese (ja)
Other versions
JPS5843908B2 (en
Inventor
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2770477A priority Critical patent/JPS5843908B2/en
Publication of JPS53112688A publication Critical patent/JPS53112688A/en
Publication of JPS5843908B2 publication Critical patent/JPS5843908B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent the open wire of the wiring layer placed on the upper layer, by softening the insulating film between layers where the junction holes between layers are formed and by smoothing the steps steep for the holes.
COPYRIGHT: (C)1978,JPO&Japio
JP2770477A 1977-03-14 1977-03-14 Manufacturing method of semiconductor device Expired JPS5843908B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2770477A JPS5843908B2 (en) 1977-03-14 1977-03-14 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2770477A JPS5843908B2 (en) 1977-03-14 1977-03-14 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS53112688A true JPS53112688A (en) 1978-10-02
JPS5843908B2 JPS5843908B2 (en) 1983-09-29

Family

ID=12228364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2770477A Expired JPS5843908B2 (en) 1977-03-14 1977-03-14 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5843908B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Also Published As

Publication number Publication date
JPS5843908B2 (en) 1983-09-29

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