JPS5561056A - High resistance structure of integrated circuit - Google Patents

High resistance structure of integrated circuit

Info

Publication number
JPS5561056A
JPS5561056A JP13597578A JP13597578A JPS5561056A JP S5561056 A JPS5561056 A JP S5561056A JP 13597578 A JP13597578 A JP 13597578A JP 13597578 A JP13597578 A JP 13597578A JP S5561056 A JPS5561056 A JP S5561056A
Authority
JP
Japan
Prior art keywords
high resistance
integrated circuit
resistance
resistance structure
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13597578A
Other languages
Japanese (ja)
Inventor
Hiroshi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13597578A priority Critical patent/JPS5561056A/en
Publication of JPS5561056A publication Critical patent/JPS5561056A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To secure a high resistance in a small area on Si substrate by connecting poly-Si resistance layers in series which are built up by way of SiO2 film. CONSTITUTION:Resistance layers 13, 14 of poly-Si of the first and the second layers are insulated each other and built up on an Si substrate 11 by way of SiO2 film 12, and these are connected with a connection layer 15 to high resistance. According to this method, a high resistance having about two times of resistance value is obtainable in an occupied area almost same as the conventional one.
JP13597578A 1978-10-31 1978-10-31 High resistance structure of integrated circuit Pending JPS5561056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13597578A JPS5561056A (en) 1978-10-31 1978-10-31 High resistance structure of integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13597578A JPS5561056A (en) 1978-10-31 1978-10-31 High resistance structure of integrated circuit

Publications (1)

Publication Number Publication Date
JPS5561056A true JPS5561056A (en) 1980-05-08

Family

ID=15164239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13597578A Pending JPS5561056A (en) 1978-10-31 1978-10-31 High resistance structure of integrated circuit

Country Status (1)

Country Link
JP (1) JPS5561056A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620212A (en) * 1982-05-28 1986-10-28 Nec Corporation Semiconductor device with a resistor of polycrystalline silicon
US4695866A (en) * 1983-09-28 1987-09-22 Nec Corporation Semiconductor integrated circuit device
JPH02113566A (en) * 1988-10-21 1990-04-25 Nec Corp Semiconductor integrated circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620212A (en) * 1982-05-28 1986-10-28 Nec Corporation Semiconductor device with a resistor of polycrystalline silicon
US4695866A (en) * 1983-09-28 1987-09-22 Nec Corporation Semiconductor integrated circuit device
JPH02113566A (en) * 1988-10-21 1990-04-25 Nec Corp Semiconductor integrated circuit

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