JPS6484743A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6484743A
JPS6484743A JP24348287A JP24348287A JPS6484743A JP S6484743 A JPS6484743 A JP S6484743A JP 24348287 A JP24348287 A JP 24348287A JP 24348287 A JP24348287 A JP 24348287A JP S6484743 A JPS6484743 A JP S6484743A
Authority
JP
Japan
Prior art keywords
diffused resistors
layers
substrate
semiconductor device
buffer material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24348287A
Other languages
Japanese (ja)
Other versions
JP2611261B2 (en
Inventor
Nobuyuki Ishikawa
Hideo Yamanaka
Hiroshi Numata
Takao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62243482A priority Critical patent/JP2611261B2/en
Publication of JPS6484743A publication Critical patent/JPS6484743A/en
Application granted granted Critical
Publication of JP2611261B2 publication Critical patent/JP2611261B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To solve the problem of resistance value due to stress in diffused resistors and obtain a semiconductor device having stable characteristics, by forming buffer material layers so as to cover almost the whole surfaces of the diffused resistors on a pair of diffused resistors at least of the semiconductor device where insulating films having thermal expansion coefficient which is different from that of a substrate are formed on a semiconductor substrate which forms a plurality of diffused resistors. CONSTITUTION:At a semiconductor device having a plurality of diffused resistors 5 formed at a semiconductor substrate 1 and having insulating films 6, 9, and 11 where their thermal expansion coefficient is different from that of the substrate 1 on its substrate 1, buffer material layers 21 are formed on a pair of the diffused resistors 5 at least so as to cover almost the whole surfaces of the diffused resistors 5. For example, this device allows the first electrode or wiring layers 7 and 8 which are connected to both two ends of contact windows 6a and 6b through these windows which are cut and provided at surface insulating layers 6 corresponding to the diffused resistors 5 to be spread over the surface insulating layers 6 and to be extended so that they may come close to almost center positions of the diffused resistors 5 one another to the utmost and then, the buffer material layers 21 are formed. Further, the above layers 21 are formed as well by the second electrode or a wiring layer 10 which are formed on a layer insulation layer 9 through its layer.
JP62243482A 1987-09-28 1987-09-28 Method for manufacturing semiconductor device Expired - Lifetime JP2611261B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243482A JP2611261B2 (en) 1987-09-28 1987-09-28 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243482A JP2611261B2 (en) 1987-09-28 1987-09-28 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6484743A true JPS6484743A (en) 1989-03-30
JP2611261B2 JP2611261B2 (en) 1997-05-21

Family

ID=17104544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243482A Expired - Lifetime JP2611261B2 (en) 1987-09-28 1987-09-28 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2611261B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04357863A (en) * 1991-06-04 1992-12-10 Mitsubishi Electric Corp Semiconductor integrated circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251162A (en) * 1985-04-30 1986-11-08 Fujitsu Ltd Structure of semiconductor resistor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251162A (en) * 1985-04-30 1986-11-08 Fujitsu Ltd Structure of semiconductor resistor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04357863A (en) * 1991-06-04 1992-12-10 Mitsubishi Electric Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JP2611261B2 (en) 1997-05-21

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