JPS57153461A - Input protective resistor for semiconductor device - Google Patents
Input protective resistor for semiconductor deviceInfo
- Publication number
- JPS57153461A JPS57153461A JP3854181A JP3854181A JPS57153461A JP S57153461 A JPS57153461 A JP S57153461A JP 3854181 A JP3854181 A JP 3854181A JP 3854181 A JP3854181 A JP 3854181A JP S57153461 A JPS57153461 A JP S57153461A
- Authority
- JP
- Japan
- Prior art keywords
- bending
- resistor
- linear
- portions
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005452 bending Methods 0.000 abstract 6
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent a concentration of the current in a bending portion and obtain a protective layer without break-down by a method wherein Si layer is provided on an insulation basic body or a reverse conduction type diffusion layer is provided on a reverse conduction type semiconductor to form a linear high resistor and they are connected through a low resistor layer by bending them alternately. CONSTITUTION:A protective resistor 12 consisting of polysilicon material is formed on an insulation film 11 of Si substrate, the vertical linear portions 121, 122 ... are parallel-arranged in parallel with each other, while they are connected with the lateral linear portions 123, 124 ... and the full configuration is formed in a bending shape. The end of the linear portion 129 is connected in seies with the IC input part of the Si substrate and the end of the linear portion 121 is connected through a hole 13 in the insulation film 11 to an electrode pad 13. A small hole is provided in the crossed portion of the vertical or lateral line, that is, each bending portion of the protective resistor to charge Al141-148 thereinto. According to such a constitution, if the excessive input is applied from the pad 13, since the bending portions are made of Al of low resistance, the portions are protected from break-down by avoiding the current concentration. Therefore, the protective resistor of longer size and higher resistance value can be obtained without exerting any adverse influence against an integrated density by increasing a turning number of the bending.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3854181A JPS57153461A (en) | 1981-03-17 | 1981-03-17 | Input protective resistor for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3854181A JPS57153461A (en) | 1981-03-17 | 1981-03-17 | Input protective resistor for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57153461A true JPS57153461A (en) | 1982-09-22 |
Family
ID=12528139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3854181A Pending JPS57153461A (en) | 1981-03-17 | 1981-03-17 | Input protective resistor for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57153461A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61100969A (en) * | 1984-10-22 | 1986-05-19 | Nec Corp | Insulated gate protective semiconductor device |
| JPS61201352U (en) * | 1985-06-06 | 1986-12-17 | ||
| JPH0434967A (en) * | 1990-05-30 | 1992-02-05 | Nec Ic Microcomput Syst Ltd | Mos integrated circuit device |
-
1981
- 1981-03-17 JP JP3854181A patent/JPS57153461A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61100969A (en) * | 1984-10-22 | 1986-05-19 | Nec Corp | Insulated gate protective semiconductor device |
| JPS61201352U (en) * | 1985-06-06 | 1986-12-17 | ||
| JPH0434967A (en) * | 1990-05-30 | 1992-02-05 | Nec Ic Microcomput Syst Ltd | Mos integrated circuit device |
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