JPS5756958A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5756958A
JPS5756958A JP55132146A JP13214680A JPS5756958A JP S5756958 A JPS5756958 A JP S5756958A JP 55132146 A JP55132146 A JP 55132146A JP 13214680 A JP13214680 A JP 13214680A JP S5756958 A JPS5756958 A JP S5756958A
Authority
JP
Japan
Prior art keywords
polysilicon
film
layer
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55132146A
Other languages
Japanese (ja)
Other versions
JPS6329832B2 (en
Inventor
Shoji Ariizumi
Makoto Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55132146A priority Critical patent/JPS5756958A/en
Priority to EP81304319A priority patent/EP0048610B1/en
Priority to DE8181304319T priority patent/DE3173506D1/en
Publication of JPS5756958A publication Critical patent/JPS5756958A/en
Priority to US06/814,295 priority patent/US4673969A/en
Publication of JPS6329832B2 publication Critical patent/JPS6329832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Abstract

PURPOSE:To accelerate the memory cell of a static RAM, for example, and to form a structure for preventing the stepwise disconnection by forming metallic silicide layer in parallel on a polysilicon layer and connecting them through an insulating film, thereby reducing the wiring resistance. CONSTITUTION:A contacting hole is formed at a substrate 1 formed with a field film 2 and a gate film 3, and the first polysilicon (phosphorus-doped) layer 4 for gate electrode or the like is then formed. Then, an insulating film 5 is covered, and the second polysilicon pattern 6 to become a resistor and an MoSi2 film 7 is, for example, formed on the film 5. The pattern 7 is so formed as to superpose on the gate wiring polysilicon 4, and is connected in parallel at the plural positions. Then, an insulating film 8 is accumulated, an upper aluminum layer is formed, and a circuit device is formed. In this manner, a wording wire can be reduced in resistance of the RAM or the like, the polysilicon of the second layer and the silicide can be formed in the same level, thereby reducing the stepwise difference.
JP55132146A 1980-09-22 1980-09-22 Semiconductor device Granted JPS5756958A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55132146A JPS5756958A (en) 1980-09-22 1980-09-22 Semiconductor device
EP81304319A EP0048610B1 (en) 1980-09-22 1981-09-21 Semiconductor device and its manufacture
DE8181304319T DE3173506D1 (en) 1980-09-22 1981-09-21 Semiconductor device and its manufacture
US06/814,295 US4673969A (en) 1980-09-22 1985-12-30 Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55132146A JPS5756958A (en) 1980-09-22 1980-09-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5756958A true JPS5756958A (en) 1982-04-05
JPS6329832B2 JPS6329832B2 (en) 1988-06-15

Family

ID=15074424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55132146A Granted JPS5756958A (en) 1980-09-22 1980-09-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5756958A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871652A (en) * 1981-10-26 1983-04-28 Hitachi Ltd Semiconductor memory device
JPS58191462A (en) * 1982-05-04 1983-11-08 Nec Corp Semiconductor device
JPS594160A (en) * 1982-06-21 1984-01-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Static ram cell
JPS604252A (en) * 1983-06-22 1985-01-10 Nec Corp Semiconductor integrated circuit memory device
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
US4604641A (en) * 1981-11-30 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPS6387763A (en) * 1987-08-13 1988-04-19 Nec Corp Semiconductor integrated circuit memory
JPS6422046A (en) * 1987-07-17 1989-01-25 Sony Corp Semiconductor and manufacture thereof
US4961104A (en) * 1987-04-24 1990-10-02 Nec Corporation Multi-level wiring structure of semiconductor device
US6667537B1 (en) * 1997-10-27 2003-12-23 Seiko Epson Corporation Semiconductor devices including resistance elements and fuse elements
US6696733B2 (en) 1997-10-27 2004-02-24 Seiko Epson Corporation Semiconductor devices including electrode structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0378925A (en) * 1989-08-22 1991-04-04 Meidensha Corp Gas load switch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106693A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Integrated circuit
JPS55120150A (en) * 1979-03-09 1980-09-16 Toshiba Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106693A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Integrated circuit
JPS55120150A (en) * 1979-03-09 1980-09-16 Toshiba Corp Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871652A (en) * 1981-10-26 1983-04-28 Hitachi Ltd Semiconductor memory device
US4604641A (en) * 1981-11-30 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JPS58191462A (en) * 1982-05-04 1983-11-08 Nec Corp Semiconductor device
JPS594160A (en) * 1982-06-21 1984-01-10 フエアチアイルド・カメラ・アンド・インストルメント・コ−ポレ−シヨン Static ram cell
JPH0436468B2 (en) * 1982-06-21 1992-06-16 Fueachairudo Kamera Endo Insutsurumento Corp
JPS604252A (en) * 1983-06-22 1985-01-10 Nec Corp Semiconductor integrated circuit memory device
US4528582A (en) * 1983-09-21 1985-07-09 General Electric Company Interconnection structure for polycrystalline silicon resistor and methods of making same
US4961104A (en) * 1987-04-24 1990-10-02 Nec Corporation Multi-level wiring structure of semiconductor device
JPS6422046A (en) * 1987-07-17 1989-01-25 Sony Corp Semiconductor and manufacture thereof
JPS6387763A (en) * 1987-08-13 1988-04-19 Nec Corp Semiconductor integrated circuit memory
US6667537B1 (en) * 1997-10-27 2003-12-23 Seiko Epson Corporation Semiconductor devices including resistance elements and fuse elements
US6696733B2 (en) 1997-10-27 2004-02-24 Seiko Epson Corporation Semiconductor devices including electrode structure

Also Published As

Publication number Publication date
JPS6329832B2 (en) 1988-06-15

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