JPS57170562A - Bipolar integrated circuit device - Google Patents
Bipolar integrated circuit deviceInfo
- Publication number
- JPS57170562A JPS57170562A JP5680381A JP5680381A JPS57170562A JP S57170562 A JPS57170562 A JP S57170562A JP 5680381 A JP5680381 A JP 5680381A JP 5680381 A JP5680381 A JP 5680381A JP S57170562 A JPS57170562 A JP S57170562A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- forming
- external terminal
- internal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the breakdown voltage of an IC by forming a reverse diode between an external terminal and an internal terminal when the electrode of the internal element in the IC is extracted to the external terminal. CONSTITUTION:N<+> type buried layers 102a, 103b are formed in a P type Si substrate 101, an N type epitaxial layer is superposed, and is isolated via a P<+> type layer 105 into layers 103a, 103b. Windows are opened at the prescribed positions of an SiO2 film 104, thereby forming a P type base layer 106, an N<+> type emitter layer 107, an N<+> type collector connection layer 108a and the N<+> type connection layer 108b of a protective element 4. Then, a window is selectively opened at an SiO2 104 to attach aluminum electrodes 109-113, the base electrode 110 of an NPN type element 2 is connected to an external terminal 1, an emitter electrode 111 is connected to a ground terminal together with the substrate 101. According to this structure, even if abnormal overvoltage is applied, the internal element can be sufficiently protected by a diode, and the protective element can be simply formed by using the same substrate at the time of forming the internal element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5680381A JPS57170562A (en) | 1981-04-14 | 1981-04-14 | Bipolar integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5680381A JPS57170562A (en) | 1981-04-14 | 1981-04-14 | Bipolar integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57170562A true JPS57170562A (en) | 1982-10-20 |
Family
ID=13037550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5680381A Pending JPS57170562A (en) | 1981-04-14 | 1981-04-14 | Bipolar integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170562A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111363A (en) * | 1982-12-16 | 1984-06-27 | Mitsubishi Electric Corp | Surge protective circuit for bipolar integrated circuit |
-
1981
- 1981-04-14 JP JP5680381A patent/JPS57170562A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111363A (en) * | 1982-12-16 | 1984-06-27 | Mitsubishi Electric Corp | Surge protective circuit for bipolar integrated circuit |
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