JPS5511393A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5511393A
JPS5511393A JP3692579A JP3692579A JPS5511393A JP S5511393 A JPS5511393 A JP S5511393A JP 3692579 A JP3692579 A JP 3692579A JP 3692579 A JP3692579 A JP 3692579A JP S5511393 A JPS5511393 A JP S5511393A
Authority
JP
Japan
Prior art keywords
base
sio
film
basic board
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3692579A
Other languages
Japanese (ja)
Inventor
Kuniaki Kumamaru
Shunichi Kai
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3692579A priority Critical patent/JPS5511393A/en
Publication of JPS5511393A publication Critical patent/JPS5511393A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate an abnormal reverse turn channel for an improvement in anti-pressure feature under an electrode wire by accumulating Si3N4 film or Al2O3 film except an impurity film on an insulating film of an impurity-included semiconductor basic board surface and by inducing an inherent electric charge into the basic board field surface.
CONSTITUTION: On base layers other than a P type emitter 12 and a collector 13 of a N type Si basic board 11, Si3N416 is produced through SiO215. At the emitter, the collecter and a N+ base connection layer 14 are staire-featured electrode windows 17W19 formed to attach electrodes 20W22 respectively. This Si3N4 layer 14 is selectively formed into especially high voltage-required sections, for example, a lateral transistor base layer. Due to the presence of the Si3N416, at the base board and the SiO215 field surface, a reverse turn channel is not brought out even if there is wiring. Hence when there is no input to a base electrode 22, an electric current is not leaked from the emitter 12 to the collector 13 to improve an unti-pressure. And the Si314 absorbs a distorsion of the field surface between the SiO215 and the basic board to stabilize an amplification rate B.
COPYRIGHT: (C)1980,JPO&Japio
JP3692579A 1979-03-30 1979-03-30 Semiconductor device Pending JPS5511393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3692579A JPS5511393A (en) 1979-03-30 1979-03-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3692579A JPS5511393A (en) 1979-03-30 1979-03-30 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5709978A Division JPS54149469A (en) 1978-05-16 1978-05-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5511393A true JPS5511393A (en) 1980-01-26

Family

ID=12483327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3692579A Pending JPS5511393A (en) 1979-03-30 1979-03-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5511393A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57191060U (en) * 1981-05-28 1982-12-03
JPH05243245A (en) * 1992-03-03 1993-09-21 Nec Yamagata Ltd Lateral p-n-p transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57191060U (en) * 1981-05-28 1982-12-03
JPH05243245A (en) * 1992-03-03 1993-09-21 Nec Yamagata Ltd Lateral p-n-p transistor

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