JPS5511393A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5511393A JPS5511393A JP3692579A JP3692579A JPS5511393A JP S5511393 A JPS5511393 A JP S5511393A JP 3692579 A JP3692579 A JP 3692579A JP 3692579 A JP3692579 A JP 3692579A JP S5511393 A JPS5511393 A JP S5511393A
- Authority
- JP
- Japan
- Prior art keywords
- base
- sio
- film
- basic board
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To eliminate an abnormal reverse turn channel for an improvement in anti-pressure feature under an electrode wire by accumulating Si3N4 film or Al2O3 film except an impurity film on an insulating film of an impurity-included semiconductor basic board surface and by inducing an inherent electric charge into the basic board field surface.
CONSTITUTION: On base layers other than a P type emitter 12 and a collector 13 of a N type Si basic board 11, Si3N416 is produced through SiO215. At the emitter, the collecter and a N+ base connection layer 14 are staire-featured electrode windows 17W19 formed to attach electrodes 20W22 respectively. This Si3N4 layer 14 is selectively formed into especially high voltage-required sections, for example, a lateral transistor base layer. Due to the presence of the Si3N416, at the base board and the SiO215 field surface, a reverse turn channel is not brought out even if there is wiring. Hence when there is no input to a base electrode 22, an electric current is not leaked from the emitter 12 to the collector 13 to improve an unti-pressure. And the Si314 absorbs a distorsion of the field surface between the SiO215 and the basic board to stabilize an amplification rate B.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3692579A JPS5511393A (en) | 1979-03-30 | 1979-03-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3692579A JPS5511393A (en) | 1979-03-30 | 1979-03-30 | Semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5709978A Division JPS54149469A (en) | 1978-05-16 | 1978-05-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511393A true JPS5511393A (en) | 1980-01-26 |
Family
ID=12483327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3692579A Pending JPS5511393A (en) | 1979-03-30 | 1979-03-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511393A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57191060U (en) * | 1981-05-28 | 1982-12-03 | ||
JPH05243245A (en) * | 1992-03-03 | 1993-09-21 | Nec Yamagata Ltd | Lateral p-n-p transistor |
-
1979
- 1979-03-30 JP JP3692579A patent/JPS5511393A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57191060U (en) * | 1981-05-28 | 1982-12-03 | ||
JPH05243245A (en) * | 1992-03-03 | 1993-09-21 | Nec Yamagata Ltd | Lateral p-n-p transistor |
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