JPS5591173A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5591173A
JPS5591173A JP16304978A JP16304978A JPS5591173A JP S5591173 A JPS5591173 A JP S5591173A JP 16304978 A JP16304978 A JP 16304978A JP 16304978 A JP16304978 A JP 16304978A JP S5591173 A JPS5591173 A JP S5591173A
Authority
JP
Japan
Prior art keywords
substrate
layer
diode
input signal
breakdown voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16304978A
Other languages
Japanese (ja)
Inventor
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16304978A priority Critical patent/JPS5591173A/en
Publication of JPS5591173A publication Critical patent/JPS5591173A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To prevent carrier injection to a substrate when an input signal is reverse voltage even when the substrate is grounded by forming a pn-junction through an insulating film on an integrated circuit (IC) substrate to use it for an input protecting circuit to thereby isolate the substrate therefrom. CONSTITUTION:p-Type and n-type polycrystalline silicon layers 20, 21 are formed on an oxide thin film 19 of a p-type silicon substrate, and the layer 20 is connected through a wire 9 to the gate electrode 6 of a MOSFET7. Electrodes 12, 22 are grounded. The breakdown voltage of a diode 23 between the layer 20 and 21 is approx. 10 volts. When an input signal is now negative from the grounding potential, the diode 23 in conducted. Thus, electron is injected into layer 21 and absorbed to a terminal 22. Since the layer 21 is insulated from the substrate, electron is not injected into the substrate to thereby occur no erroneous operation in a dynamic circuit. When the input signal is positive high level, it is clamped at the breakdown voltage of the diode 23. Thus, higher than the breakdown voltage is not applied to the gate electrode 6 of the FET to thereby perform the protecting function thereof.
JP16304978A 1978-12-28 1978-12-28 Semiconductor integrated circuit device Pending JPS5591173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16304978A JPS5591173A (en) 1978-12-28 1978-12-28 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16304978A JPS5591173A (en) 1978-12-28 1978-12-28 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5591173A true JPS5591173A (en) 1980-07-10

Family

ID=15766195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16304978A Pending JPS5591173A (en) 1978-12-28 1978-12-28 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5591173A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0322860A2 (en) * 1987-12-28 1989-07-05 Fuji Electric Co., Ltd. Insulated gate semiconductor device
US4937639A (en) * 1987-10-16 1990-06-26 Nissan Motor Company, Limited Input protector device for semiconductor device
US5079609A (en) * 1988-12-28 1992-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having dielectric breakdown protection element and method of fabricating same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376677A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376677A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937639A (en) * 1987-10-16 1990-06-26 Nissan Motor Company, Limited Input protector device for semiconductor device
EP0322860A2 (en) * 1987-12-28 1989-07-05 Fuji Electric Co., Ltd. Insulated gate semiconductor device
US5079609A (en) * 1988-12-28 1992-01-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having dielectric breakdown protection element and method of fabricating same

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