JPS577950A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS577950A
JPS577950A JP8313180A JP8313180A JPS577950A JP S577950 A JPS577950 A JP S577950A JP 8313180 A JP8313180 A JP 8313180A JP 8313180 A JP8313180 A JP 8313180A JP S577950 A JPS577950 A JP S577950A
Authority
JP
Japan
Prior art keywords
diffusion layer
window
layer
wiring
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8313180A
Other languages
Japanese (ja)
Other versions
JPH0127584B2 (en
Inventor
Akira Osanaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8313180A priority Critical patent/JPS577950A/en
Publication of JPS577950A publication Critical patent/JPS577950A/en
Publication of JPH0127584B2 publication Critical patent/JPH0127584B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Abstract

PURPOSE:To prevent the surge breakdown of a circuit directly connected to an external terminal while improving the degree of integration by connecting metal for bonding to a diffusion layer through a window bored to an insulating layer formed on the surface of the diffusion layer. CONSTITUTION:A field oxide film 12 is made up to a P type silicon substrate 11, the N type diffusion layer 13 is built up in a fixed region of the film 12, the insulating layer 14 is formed on the surface of the diffusion layer 13 and the surface of the field oxide film 12, and the window 15 connected to the diffusion layer 13 is boared to the insulting layer 14. Extracting wiring 16 such as Al is made up on the surface of diffusion layer 13 exposed by the window 15 and the whole surface of the insulating layer 14, and the wiring is patterned and the metal 17 for bonding to which the external terminal is connected and a wiring 18 section connected to a resistor for protection are built up. Accordingly, the substrate and the diffusion layer function as diodes, and the metal can be protected from surge voltage.
JP8313180A 1980-06-19 1980-06-19 Semiconductor integrated circuit device Granted JPS577950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8313180A JPS577950A (en) 1980-06-19 1980-06-19 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8313180A JPS577950A (en) 1980-06-19 1980-06-19 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS577950A true JPS577950A (en) 1982-01-16
JPH0127584B2 JPH0127584B2 (en) 1989-05-30

Family

ID=13793637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8313180A Granted JPS577950A (en) 1980-06-19 1980-06-19 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS577950A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122774U (en) * 1978-02-15 1979-08-28
JPS54152467A (en) * 1978-05-22 1979-11-30 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122774U (en) * 1978-02-15 1979-08-28
JPS54152467A (en) * 1978-05-22 1979-11-30 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0127584B2 (en) 1989-05-30

Similar Documents

Publication Publication Date Title
JPS5690555A (en) Semiconductor integrated circuit
JPS57141962A (en) Semiconductor integrated circuit device
ATE47505T1 (en) MONOLITHIC INTEGRATED SEMICONDUCTOR CIRCUIT.
JPS5563840A (en) Semiconductor integrated device
JPS5748247A (en) Semiconductor integrated circuit device
JPS577950A (en) Semiconductor integrated circuit device
JPS56148848A (en) Beam lead type semiconductor device
JPS54154966A (en) Semiconductor electron device
JPS56100441A (en) Semiconductor ic device with protection element and manufacture thereof
JPS5718353A (en) Semiconductor device
JPS57164571A (en) Semiconductro integrated circuit device
JPS57180158A (en) Input protector for complementary mos integrated circuit
JPH0888326A (en) Electrostatic protection structure of semiconductor device
JPH0629471A (en) Semiconductor device
JPS5635470A (en) Semiconductor device
JPS58202573A (en) Semiconductor integrated circuit device
JPS57211782A (en) Semiconductor device
JPS54107258A (en) Semiconductor device
JPS62263670A (en) Semiconductor device
IE820679L (en) Isolated integrated circuit comprising a substrate electrode
JPS57187962A (en) Surge protector of semiconductor integrated circuit
JPS5773976A (en) Mos type semiconductor device
JPS57160156A (en) Semiconductor device
JPS57147270A (en) Semiconductor device
JPS62166557A (en) Protective device against electrostatic breakdown of semiconductor