JPS54107258A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54107258A JPS54107258A JP1342478A JP1342478A JPS54107258A JP S54107258 A JPS54107258 A JP S54107258A JP 1342478 A JP1342478 A JP 1342478A JP 1342478 A JP1342478 A JP 1342478A JP S54107258 A JPS54107258 A JP S54107258A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- mask
- psg
- chromium alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
PURPOSE: To obtain a passivation structure where cracks of a wiring protect film and the deterioration of etching-proof property is not generated at a bonding time, by using soft heat-proof resin and hard PSG.
CONSTITUTION: Field oxide film 2 is formed on Si substrate 1, and poly-Si wiring 8 is formed which will be connected to an active region. PSG film 4 which becomes an inter-layer insulating film is formed on wiring 8, and polyimide-system organic resin film 9 is formed, and windows are provided partially. Next, nickel chromium alloy film 10 and palladium film 11 which become a plating ground film are formed on all the surface, and gold bump 7 is formed by mask 12. After that, the gold bump is used as a mask to remove palladium and nickel chromium alloy films, thereby completing a semiconductor element.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1342478A JPS54107258A (en) | 1978-02-10 | 1978-02-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1342478A JPS54107258A (en) | 1978-02-10 | 1978-02-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54107258A true JPS54107258A (en) | 1979-08-22 |
Family
ID=11832744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1342478A Pending JPS54107258A (en) | 1978-02-10 | 1978-02-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107258A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111232A (en) * | 1980-02-07 | 1981-09-02 | Fujitsu Ltd | Preparation of semiconductor device |
JPS6022368A (en) * | 1983-07-18 | 1985-02-04 | Toshiba Corp | Semiconductor device |
JPH02121333A (en) * | 1988-10-31 | 1990-05-09 | Toshiba Corp | Semiconductor device and its manufacture |
-
1978
- 1978-02-10 JP JP1342478A patent/JPS54107258A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56111232A (en) * | 1980-02-07 | 1981-09-02 | Fujitsu Ltd | Preparation of semiconductor device |
JPS6022368A (en) * | 1983-07-18 | 1985-02-04 | Toshiba Corp | Semiconductor device |
JPH02121333A (en) * | 1988-10-31 | 1990-05-09 | Toshiba Corp | Semiconductor device and its manufacture |
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